TWI442501B - Electrostatic chuck and its manufacturing method - Google Patents

Electrostatic chuck and its manufacturing method Download PDF

Info

Publication number
TWI442501B
TWI442501B TW098110146A TW98110146A TWI442501B TW I442501 B TWI442501 B TW I442501B TW 098110146 A TW098110146 A TW 098110146A TW 98110146 A TW98110146 A TW 98110146A TW I442501 B TWI442501 B TW I442501B
Authority
TW
Taiwan
Prior art keywords
electrostatic chuck
layer
concave portion
film
ceramic
Prior art date
Application number
TW098110146A
Other languages
English (en)
Chinese (zh)
Other versions
TW200949980A (en
Inventor
肥田剛
山本高志
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200949980A publication Critical patent/TW200949980A/zh
Application granted granted Critical
Publication of TWI442501B publication Critical patent/TWI442501B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating
    • Y10T29/49986—Subsequent to metal working

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Drying Of Semiconductors (AREA)
TW098110146A 2008-03-28 2009-03-27 Electrostatic chuck and its manufacturing method TWI442501B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008085417A JP5201527B2 (ja) 2008-03-28 2008-03-28 静電チャック、及びその製造方法

Publications (2)

Publication Number Publication Date
TW200949980A TW200949980A (en) 2009-12-01
TWI442501B true TWI442501B (zh) 2014-06-21

Family

ID=41115938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098110146A TWI442501B (zh) 2008-03-28 2009-03-27 Electrostatic chuck and its manufacturing method

Country Status (4)

Country Link
US (2) US8517392B2 (https=)
JP (1) JP5201527B2 (https=)
CN (1) CN101546724B (https=)
TW (1) TWI442501B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5876992B2 (ja) * 2011-04-12 2016-03-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
KR101372805B1 (ko) * 2012-11-30 2014-03-19 로체 시스템즈(주) 웨이퍼 식각 시스템 및 이를 이용한 웨이퍼 식각 공정
CN104241181B (zh) * 2013-06-08 2018-05-29 中微半导体设备(上海)有限公司 静电吸盘的制造方法，静电吸盘及等离子体处理装置
KR101385950B1 (ko) * 2013-09-16 2014-04-16 주식회사 펨빅스 정전척 및 정전척 제조 방법
CH708654A2 (fr) * 2013-10-01 2015-04-15 Rado Montres Sa Procédé de fabrication d'un élément céramique incrusté d'une pièce d'horlogerie et pièces d'horlogerie incluant de tels éléments.
JP6277015B2 (ja) * 2014-02-28 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2015153756A1 (en) 2014-04-01 2015-10-08 Entegris, Inc. Heated electrostatic chuck
TWI613753B (zh) 2015-02-16 2018-02-01 麥豐密封科技股份有限公司 靜電吸附承盤側壁之改良密封件
JP6937753B2 (ja) * 2015-12-07 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 融合されたカバーリング
CN106935529B (zh) * 2015-12-31 2020-03-24 中微半导体设备(上海)股份有限公司 一种基片支撑台及其制造方法
JP6971183B2 (ja) * 2018-03-23 2021-11-24 新光電気工業株式会社 基板固定装置
KR102463946B1 (ko) * 2018-05-28 2022-11-04 니뽄 도쿠슈 도교 가부시키가이샤 유지 장치, 및, 유지 장치의 제조 방법
JP6901547B2 (ja) * 2018-09-28 2021-07-14 日本特殊陶業株式会社 半導体製造用部品
JP7134826B2 (ja) * 2018-10-11 2022-09-12 東京エレクトロン株式会社 静電チャックの生産方法
KR102502299B1 (ko) * 2019-09-06 2023-02-23 토토 가부시키가이샤 정전 척
JP7438070B2 (ja) * 2020-09-11 2024-02-26 新光電気工業株式会社 静電チャック、基板固定装置及び基板固定装置の製造方法
JP7701149B2 (ja) * 2020-12-24 2025-07-01 新光電気工業株式会社 静電チャックの製造方法
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
US11410869B1 (en) * 2021-02-22 2022-08-09 Applied Materials, Inc. Electrostatic chuck with differentiated ceramics
JP7248182B1 (ja) 2022-08-30 2023-03-29 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
JP2025011893A (ja) * 2023-07-12 2025-01-24 新光電気工業株式会社 静電チャック、基板固定装置
CN116959948B (zh) * 2023-09-21 2023-12-08 江苏鲁汶仪器股份有限公司 一种静电吸盘以及等离子体刻蚀装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2984164B2 (ja) * 1993-03-26 1999-11-29 日本碍子株式会社 半導体製造用サセプター
US5986874A (en) * 1997-06-03 1999-11-16 Watkins-Johnson Company Electrostatic support assembly having an integral ion focus ring
JP3974226B2 (ja) 1997-07-15 2007-09-12 プレス工業株式会社 溶接部の強化方法及び溶接部の強化装置
JP4493251B2 (ja) * 2001-12-04 2010-06-30 Ｔｏｔｏ株式会社 静電チャックモジュールおよび基板処理装置
JP2003264223A (ja) * 2002-03-08 2003-09-19 Rasa Ind Ltd 静電チャック部品および静電チャック装置およびその製造方法
JP4066329B2 (ja) * 2002-09-05 2008-03-26 太平洋セメント株式会社 静電チャックの製造方法およびそれを用いて得られた静電チャック
JP2003321760A (ja) * 2003-05-19 2003-11-14 Tocalo Co Ltd プラズマ処理容器内部材およびその製造方法
JP5019811B2 (ja) 2006-07-20 2012-09-05 東京エレクトロン株式会社 静電吸着電極の補修方法
JP5160112B2 (ja) * 2007-03-19 2013-03-13 東京エレクトロン株式会社 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置

Also Published As

Publication number Publication date
JP5201527B2 (ja) 2013-06-05
TW200949980A (en) 2009-12-01
US20090243236A1 (en) 2009-10-01
CN101546724B (zh) 2011-08-03
JP2009235536A (ja) 2009-10-15
US8776356B2 (en) 2014-07-15
CN101546724A (zh) 2009-09-30
US20130306593A1 (en) 2013-11-21
US8517392B2 (en) 2013-08-27

Similar Documents

Publication Publication Date Title
TWI442501B (zh) Electrostatic chuck and its manufacturing method
KR101163825B1 (ko) 정전척 및 그 제조 방법
EP2430654B1 (en) Electrostatic chuck with polymer protrusions
TWI605539B (zh) Electrostatic chuck
TWI427735B (zh) Electrostatic chuck and electrostatic chuck manufacturing method
KR101826695B1 (ko) 정전 척 및 웨이퍼 처리장치
TWI416996B (zh) 包含用於減少聚合物沈積之射頻吸收材料的電漿限制環
TWI718133B (zh) 靜電夾盤裝置
US20050045106A1 (en) Electrostatic chuck having a low level of particle generation and method of fabricating same
TW202040744A (zh) 局部加熱之多區域基材支撐座
TWI830942B (zh) 用於半導體晶圓固持器之熱擴散器
JP2006332204A (ja) 静電チャック
JP5515365B2 (ja) 静電チャックおよび静電チャックの製造方法
KR20230150707A (ko) 정전 척 장치
KR20050054950A (ko) 미립자 발생도가 낮은 정전기 척 및 그의 제조 방법
JP7785982B2 (ja) 基板載置台の研磨方法及び基板載置台
TW202447830A (zh) 晶圓載置台
CN116936442A (zh) 静电卡盘设备
JP7672625B2 (ja) 静電チャック及び半導体製造装置
CN111883473B (zh) 静电吸盘及晶片处理装置
JP4495687B2 (ja) 静電チャック
TWI878612B (zh) 靜電夾盤、基板固定裝置及基板固定裝置之製造方法
JPH06342842A (ja) 処理装置における貼り合わせ構造
JP2004311850A (ja) 半導体あるいは液晶製造装置用保持体およびそれを搭載した半導体あるいは液晶製造装置
TW202441691A (zh) 半導體製造裝置用構件