CN101542702B - 基于硅通孔的三维晶圆叠层的键合方法 - Google Patents

基于硅通孔的三维晶圆叠层的键合方法 Download PDF

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CN101542702B
CN101542702B CN200880000042.8A CN200880000042A CN101542702B CN 101542702 B CN101542702 B CN 101542702B CN 200880000042 A CN200880000042 A CN 200880000042A CN 101542702 B CN101542702 B CN 101542702B
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wafer
hole
lamination
microchannel
opening
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CN101542702A (zh
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梁志权
孙鹏
史训清
仲镇华
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Hong Kong Applied Science and Technology Research Institute ASTRI
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Abstract

本发明描述了一个利用硅通孔连接键合实现晶圆叠层的方法，其中晶圆含有填充满焊料的硅通孔和横向的微通道。为了填充满通孔和微通道，晶圆叠层被放置在一个焊室内，并且通过真空汲取熔焊料穿过通孔和微通道而建立电连接。在组装晶圆叠层期间，晶圆通过粘胶层而被固定在一起。在晶圆叠层冷却后，可以通过局部重新加热焊料而软化焊料，从焊室移走晶圆叠层。

Description

基于硅通孔的三维晶圆叠层的键合方法
技术领域
本发明涉及基于硅通孔(through-silicon-via，TSV)的三维(3D)晶圆叠层的键合方法。本发明涉及在晶圆叠层上制作硅通孔的方法、以及涉及该晶圆叠层。
背景技术
随着电子产品，特别是便携式产品如手机的体积变得越来越小但同时必须能够提供越来越多的功能，所以有必要集成多个功能芯片，而不增加产品尺寸，保持一个较小的形状。在一个二维结构里增加电子员件数目无法实现这些目标，所以三维封装正日益被采用，以便能够提供更强的功能和更高的元件密度，但保持一个较小的形状。
在一个三维结构里，电子元件如半导体器件是一个多晶圆叠层的结构制成的。为了电连接不同层里的元件，硅通孔(TSV)技术可以被用来提供电互连，并提供机械支撑。在TSV技术里，通孔是在硅芯片上制成的，并且通孔里填充满金属。然后，具有这些通孔的多个元件被叠层和键合在一起。
键合技术(bonding method)是制作叠层电子元件的一个重要方面。一个理想的键合方法应该是可靠的且低成本的。传统的引线键合(如US6,933,172)被用来在芯片之间建立电互连，但引线键合需要较大的面内尺寸(in-plane size)，所以与最小化元件密度的目标不一致。TSV互连已经被提出作为引线键合的一个替代方案，一些方法，包括扩散连接(diffusionbonding)、焊锡连接(soldering)和粘胶连接(adhesive bonding)，可以用来连接含有TSV的晶圆/芯片。但是要添加每个新晶圆到叠层，焊接工艺可能会导致之前建立的焊点失效，从而破坏其可靠性。
在扩散键合连接里，一薄层金属键合层(例如，最好由铜制成，但也可能是锡、铟、金、镍、银、钯、钯镍合金或钛)被制作到将被连接的半导体元件的各个表面上。当在合适的温度和压力条件下元件被集合在一起时，两个金属键合层相互扩散以形成键合连接。扩散键合产生一个良好质量的可靠键合连接，但此方法的缺点是要求两个半导体组件有非常好的共平面度，并需要一个较高的键合温度。所以，实施此方法很困难且成本高。一个扩散键合方法的典型例子如US7,157,787所示。
粘胶连接是一个低成本选择，在其中将被连接在一起的晶圆表面上制作一个粘胶层。一个粘胶键合的例子如US6,593,645所示。US6.448,661显示一个现有技术的例子，其中晶圆是通过使用导电胶如各向异性导电膜(ACF)或各向异性导电胶(ACA)进行连接。另一个粘胶连接的例子如US4,897,708所示，其中晶圆是通过粘胶进行连接，而电连接是通过导电液体建立。但是，虽然粘胶连接是低成本的，并且不会出现重大的制造问题，但它提供一个较低的连接强度，所以不适用于高电流，因此并不可靠。
一个焊锡连接方法的例子如US6,577,013所示。在一个焊锡连接方法内，加焊料在将被叠层的半导体元件上的通孔结合(junction)处上。焊锡连接不需要如扩散连接所需要的高温度，但仍能产生一个良好可靠的连接。但是，随着被叠层元件数目的增加，焊锡连接将遭遇难题。随着每个新元件被添加到叠层上，焊接过程可能导致之前建立的焊点失效，从而破坏其可靠性。特别是重复的再回流过程可能导致金属间化合物在之前形成的焊点上生长，从而产生很可能失效的脆性焊点。
基于TSV的三维叠层方法的另一个问题是：通孔填充步骤可能在装满通孔的金属内产生空隙，进而可能引发可靠性问题。
发明内容
依照本发明，提供一个形成晶圆叠层的方法，步骤包括：组装多个晶圆，其中每个所述晶圆具有至少一个通孔，其中在所述两个晶圆之间界面上有一个微通道用来连接一个晶圆上的第一通孔和另一个晶圆上的第二通孔，其中所述微通道通过以下步骤形成：
施加一层粘胶层于所述两个晶圆界面之间；和
图案化所述粘胶层以至少去除位于所述第一通孔和第二通孔间的区域内的粘胶，以定义一个微通道从所述第一通孔延伸到所述第二通孔，至少一对相邻晶圆的通孔是彼此横向移位的，所述横向移位的通孔通过一个在所述相邻晶圆之间的界面上延伸的横向的微通道被连接在一起，放置所述多个晶圆在一个焊室内，施加一个真空到所述晶圆叠层中第一晶圆的第一表面，以从所述晶圆叠层中最底层晶圆的第二表面汲取熔焊料穿过所述通孔和微通道，直到所述通孔和微通道填充满焊料以完成晶圆叠层的电互连。
在本发明的优选实施例里，焊室具有一个真空管道，其连接到所述晶圆叠层第一晶圆上所述通孔对应的开口，熔焊料被汲取穿过通孔和微通道，直到其延伸到焊室的开口内。
优选地，在熔焊料被汲取穿过晶圆叠层之后，容许晶圆叠层进行冷却，然后，一部分叠层(如接触到焊室的叠层顶部的焊点)被局部再次加热，以便能够从焊室移走晶圆叠层。
优选地，晶圆叠层是在一个晶圆保持架上形成，其在焊室内放置晶圆叠层之前被去除。特别地，晶圆叠层可以通过以下步骤形成，(a)沉积第一层光刻胶在第一晶圆上，然后图案化所述第一层光刻胶的第一表面以定义将在第一晶圆上形成的通孔的位置，(b)在第一晶圆上对应通孔处蚀刻出开口，但不会延伸穿过第一晶圆，(c)在开口的内表面上和在围绕开口的第一晶圆的第一表面上形成一个金属层，(d)固定第一晶圆在一个晶圆保持架上，使得第一晶圆的第一表面面向晶圆保持架，而第一晶圆的第二表面远离晶圆保持架，(e)研磨第一晶圆的第二表面，直到开口延伸穿过第一晶圆，而变成通孔，(f)施加一个粘胶层到第二表面，并图案化粘胶层以至少去除在通孔区域内的粘胶，将已经执行步骤(a)到(c)的第二晶圆粘贴到粘胶层，然后在第二晶圆上执行步骤(e)和(f)，接着在随后的晶圆上重复步骤(a)到(c)和(e)到(f)，直到完成晶圆叠层，在最后的晶圆上省略步骤(f)。
优选地，在步骤(f)粘胶层被图案化以定义所述微通道从第一晶圆内的通孔延伸到第二晶圆的通孔。
依照本发明的另一个方面，同样提供一个形成晶圆叠层的方法，步骤包括：(a)沉积第一光刻胶层在第一晶圆上，然后图案化第一光刻胶层的第一表面，以定义将在第一晶圆内形成的通孔的位置，(b)在第一晶圆内对应通孔处蚀刻出开口，但不会延伸穿过第一晶圆，(c)在开口的内表面上和在围绕开口的第一晶圆的第一表面上形成一个金属层，(d)固定第一晶圆在一个晶圆保持架上，使得第一晶圆的第一表面面向晶圆保持架，而第一晶圆的第二表面远离晶圆保持架，(e)研磨第一晶圆的第二表面，直到开口延伸一直穿过第一晶圆，而形成通孔，(f)施加一个粘胶层到第二表面，并图案化粘胶层以至少去除在通孔区域内的粘胶，将已经执行步骤(a)到(c)的第二晶圆粘贴到粘胶层，接着在第二晶圆上执行步骤(e)和(f)，然后在随后的晶圆上重复步骤(a)到(c)和(e)到(f)，直到完成晶圆叠层，在最后的晶圆上省略步骤(f)，其中在步骤(f)所述粘胶层被图案化以定义一个微通道从所述第一晶圆上的一个通孔延伸到所述第二晶圆上的一个通孔，所述晶圆叠层包括至少一对相邻晶圆，它们的通孔是彼此横向移位的，所述横向移位的通孔通过一个在所述相邻晶圆之间界面上延伸的横向的微通道被连接在一起，其中在所述通孔和微通道填充满一种焊料。
优选地，在晶圆叠层通孔和微通道内填充焊料的步骤包括：在第一温度上放置晶圆叠层在一个焊室内，允许熔焊料充满晶圆叠层内的通孔和微通道，允许晶圆叠层冷却，使得熔焊料冷却和固化，然后，局部加热一部分晶圆叠层到比第一温度更低的第二温度，以便能够从焊室移走晶圆叠层。
依照本发明的另一个方面，提供一个包括多个晶圆的晶圆叠层，至少一个晶圆具有至少一个延伸穿透的通孔，晶圆叠层包括至少一对相邻晶圆，它们具有彼此横向移位的通孔，并且横向移位的通孔是通过一个在相邻晶圆之间界面延伸的通道被连接在一起。优选地，通孔和微通道被填充满一种焊料。
依照本发明的另一个方面，提供一种在晶圆叠层内通孔填充焊料的装置，本装置包括：一个接收晶圆叠层的内室，该内室包括第一部分和第二部分，第一部分在使用时接触到晶圆叠层中第一晶圆的第一表面，第二部分在使用时接触到晶圆叠层中最底层晶圆的第二表面，第一部分具有的开口与晶圆叠层中第一晶圆的第一表面的通孔一致，而第二部分具有的开口与晶圆叠层中最底层晶圆的第二表面的通孔一致，其中本装置的第一部分被连接到一个真空，而本装置的第二部分被连接到一个焊料源。优选地，本装置还有控制所述装置温度的设备。
附图说明
现参考附图并通过范例，将描述本发明的一些实施例，其中：
图1到22按次序地显示一个形成晶圆叠层的方法的一个实施例；
图23显示依照本发明一个实施例放置在焊室内的晶圆叠层的截面图；
图24显示在本发明一个实施例里准备一个焊料池用于焊接过程；
图25显示施加真空到焊室汲取焊料穿过晶圆叠层的效果；
图26显示依照本发明一个实施例的焊室，填充满焊料的通孔和微通道以及去除了焊料池；
图27显示重新加热焊室以便能够移走晶圆叠层；
图28显示详细的局部重新加热，以便能够移走晶圆叠层；
图29显示完成的晶圆组装；
图30显示一个通过垂直TSV和水平微通道而连接的三晶圆的例子，其有选择性电连接线路来连接晶圆上的电路；
图31与图30相同，除了所有电路都是连接的；
图32显示一个仅通过垂直TSV连接的三晶圆的例子，其有选择性电连接线路来连接晶圆上的电路，和
图33与图32相同，除了所有电路都是连接的。
具体实施方式
依照本发明一个实施例，现在将描述使用TSV堆叠多个电互连晶圆的过程。
起始点是晶圆1，如图1所示。晶圆1可以是一个硅晶圆，可以有100-500μm范围的厚度。然后，通过一个旋转涂胶过程，光刻胶层2被制作到晶圆1的上表面(图2)，接着，光刻胶2被曝光而形成一个包括开口3的期望图案(图3)，然后开口再通过一个深反应离子蚀刻(DRIE)工艺被延伸入晶圆1内(图4)，然后，去除剩余的光刻胶(图5)。
在去除光刻胶之后，接着执行一个金属电镀步骤(图6)。首先，通过等离子体增强化学气相沉积工艺，在硅晶圆的表面上形成一层SiO2，然后，按顺序地沉积Ti/W(0.1μm-2μm的厚度)和Cu(也是0.1μm-2μm的厚度)的层4。
接着，在顶表面上加一层膜状光刻胶层5(图7)，然后，其被图案化以留下部分5’覆盖开口3(图8)。接着，部分光刻胶5’保护的金属层4被蚀刻掉(图9)，然后，去除剩余的部分光刻胶5’(图10)，使得金属层4仅留下覆盖开口3的底部和侧壁，以及围住开口3的晶圆1顶表面区域。
接着，贴装膜6被附到晶圆1的顶表面上(图11)，然后，晶圆保持架7被放置在贴装膜6的顶部(图12)。晶圆1被固定到晶圆保持架7上，可对晶圆背面进行研磨工艺，其包括研磨、化学机械抛光(CMP)和蚀刻(图13)，以减小晶圆1的厚度，直到开口3一直延伸穿过晶圆1，从而变成通孔。接着，一层膜状胶8被加到晶圆1的背面(图14)。接着，粘胶层8被图案化，并使用激光(任何合适的类型和功率)去除粘胶层8的区域(图15)，从而去除粘胶层8以露出通孔3而留下部分粘胶8’，并部分确定微通道9，其将作为未来不同芯片之间的电连接。接着，类似地建造第二晶圆10，但是在晶圆背面研磨之前，通过留下的粘胶部分8’，其被粘贴到初始晶圆1的下面(图16)，从而微通道9完全是通过一个研磨、CMP和蚀刻过程而形成。在一个晶圆保持架上堆叠晶圆的优点是其能够堆叠无限数目的超薄晶圆，同时减轻处理薄晶圆时可能出现的问题。
接着，第二晶圆10接受晶圆背面研磨，使得在第二晶圆上的开口延伸穿过第二晶圆，从而变成通孔13(图17)。再次，一层粘胶膜14被加到第二层10的露出的下面(图18)，并被图案化至少露出通孔13(图19)。然后，第三晶圆15通过粘胶膜层14被粘贴到第二晶圆的下面(图20)，重复晶圆背面研磨过程以敞开第三晶圆上的通孔(图21)，接着去除贴装膜和晶圆保持架(图22)，留下三个通过粘胶膜固定在一起的晶圆，允许通过通孔3和微通道9的电互连。
当然可以理解，此过程可以经常地按要求重复，在此例子里，使用三个晶圆纯粹是为了便于说明，如果需要的话，可以提供更多(或更少)的晶圆。使用晶圆保持架的优点是其允许晶圆级叠层，然后，此晶圆叠层使高产量成为可能。
然后，合并的三个晶圆被放置在一个包括上、下两个部分的焊室内(图23)。上半部分20形成有开口22，其与在第一晶圆1的通孔3一致，并连接到一个真空管道23。下半部分21形成有开口24，其与在第三晶圆上形成的通孔一致，使得焊料池26内的熔焊料25的液体连接成为可能(图24)。可以提供一介入层(interposing layer)以保护晶圆不会直接与焊料接触。然后，如图25内的箭头所示，施加真空，焊料从焊料池26被汲取穿过三个晶圆上的通孔和微通道，直到焊料平面超过第一晶圆的顶表面，所有通孔和所有微通道都填充满熔焊料。去除焊料池26，冷却焊料(图26)。接着，再次在局部区域提高焊室温度到大约230℃，特别是在靠近晶圆叠层的填充满焊料的焊室内开口的区域，足够软化焊室开口内的焊料(图27)。这种方式的实现如图28所示，其详细显示焊室的上和下半部分20、21内的开口结构。特别地，每个开口具有一加热元件35形成在开口内表面的周围，以及一电源36通往加热元件35。加热元件35能够通过热导体(thermalconductor)38加热焊料37。这种设计容许在开口局部区域内的焊料37被软化，容许从焊室移走三个叠层晶圆(图29)。可以使用一种高分子镀层，加工形成焊室的上和下半部分20、21，其便于从焊室移走完整的晶圆叠层。
焊室20、21具有一个整体加热装置，能够使温度从150℃升到350℃，从而使所用的焊料，包括软焊料如SnPb和硬焊料如SnAgCu和SnAu。可以理解，在焊室的两半部分之间的空间可以改变，以接受不同厚度和不同数目晶圆以及不同直径晶圆(例如从4”到12”)的晶圆叠层组装。施加真空的压力可以是外部和内部之间的压力差从100Pa到10000Pa。
结果是一个如图29所示的三个晶圆的叠层，它们利用粘胶被连接在一起，且其中通孔和互连微通道填充满焊料，使三个晶圆之间能够电互连。使用真空焊料再回流工艺具有以下优势：低成本、工艺简单、且能够比现有技术更小可能性在装满焊料的通孔和微通道内形成空隙。此外，使用了一个简单工艺在所有通孔内填充满焊料，胜于使用一个重复再回流焊工艺所可能引起的可靠性问题。也应该注意到，在填充焊料过程期间，焊室的下半部分使晶圆叠层与熔焊料不接触，而不是在熔焊料被汲取穿过的开口上。
需要指出，在设计晶圆叠层时，在为任何特定应用要求的晶圆之间电互连提供不同安排配置时，垂直通孔和水平微通道的结合提供最大的灵活性。垂直通孔和水平微通道可以以任何合适的方式结合，取决于连接要求和空间限制以及任何特定晶圆叠层的考虑因素。
例如，图30显示一个三晶圆的叠层，其中在第一和第三晶圆上形成的电路(即图的顶部和底部)互相电连接，但第二晶圆没有。一个垂直TSV将第一晶圆连接到中间第二晶圆，并且垂直TSV将第二晶圆连接到第三晶圆。但是，第二和第三晶圆的TSV位于第一晶圆的TSV的侧面，第一晶圆TSV和第二晶圆TSV之间的连接是通过第一和第二晶圆之间界面或接合处的横向微通道。在图30的例子里，第一晶圆的TSV和第三晶圆的TSV通过连接线路30连接到在那些晶圆上形成的电路，但第二晶圆的TSV没有连接到在第二晶圆上形成的电路，所以绕过了。相比较来说，图31的例子与图30一样，除了第二晶圆上的电路连接到第二晶圆的TSV。
同时需要指出，晶圆仅是通过垂直TSV进行连接，个别电路可以有选择性地进行连接。例如，在图32里，显示三个晶圆仅通过TSV连接，并没有横向微通道。在图32里，仅第一和第三晶圆上形成的电路通过连接线路30连接到这些晶圆上形成的电路，而中间晶圆上形成的电路显然不被连接到第一和第三晶圆。相比较来说，在图33里显示相同的结构，除了所有三个晶圆的电路被连接到TSV从而互相连接在一起。

Claims (3)

1.一个形成晶圆叠层的方法，包括：
组装多个晶圆以形成晶圆叠层，其中每个所述晶圆至少有一个通孔，在两个晶圆界面之间有一个微通道用来连接一个晶圆上的第一通孔和另一个晶圆上的第二通孔，其中至少一对相邻晶圆的通孔是彼此横向移位的，横向移位的通孔通过一个在所述相邻晶圆之间的界面上延伸的横向的微通道被连接在一起；和
放置所述多个晶圆在一个焊室内，并施加一个真空到所述晶圆叠层中的第一晶圆的第一表面，以从所述晶圆叠层中的最底层晶圆的第二表面汲取熔焊料穿过所述通孔和微通道，直到所述通孔和微通道填充满焊料而完成晶圆叠层的电互连；
其中所述晶圆叠层是在晶圆保持架上形成，其中在所述焊室内放置所述晶圆叠层之前去掉所述晶圆保持架；
其中所述晶圆叠层是通过以下步骤形成：(a)沉积第一层光刻胶在第一晶圆上，然后图案化所述第一层光刻胶以确定将在所述第一晶圆上形成的通孔的位置，(b)在所述第一晶圆上对应所述通孔处蚀刻出开口，但没有一直延伸穿过所述第一晶圆，(c)在所述开口的内表面上和在围绕所述开口的所述第一晶圆的第一表面上形成一个金属层，(d)固定所述第一晶圆在一个晶圆保持架上，使得所述第一晶圆的所述第一表面面向所述晶圆保持架，而所述第一晶圆的第二表面远离所述晶圆保持架，(e)研磨所述第一晶圆的所述第二表面，直到所述开口延伸穿过所述第一晶圆，而变成通孔，(f)施加一层粘胶层到所述第二表面，并图案化所述粘胶层以至少去除所述通孔区域内的粘胶以形成所述微通道，将已经执行步骤（a）到（c）的第二晶圆粘贴到所述粘胶层，然后在所述第二晶圆上执行步骤（e）和（f），然后在随后的晶圆上重复步骤（a）到（c）和（e）到（f），直到完成晶圆叠层，在最后的晶圆上省略步骤（f）。
2.一个形成晶圆叠层的方法，步骤包括：（a）沉积第一层光刻胶在第一晶圆上，然后图案化所述第一层光刻胶以定义将在所述第一晶圆上形成的通孔的位置，（b）在所述第一晶圆上对应所述通孔处蚀刻出开口，但没有延伸穿过所述第一晶圆，（c）在所述开口的内表面上和在围绕所述开口的所述第一晶圆的第一表面上形成一个金属层，（d）固定所述第一晶圆在一个晶圆保持架上，使得所述第一晶圆的所述第一表面面向所述晶圆保持架，而所述第一晶圆的第二表面远离所述晶圆保持架，（e）研磨所述第一晶圆的所述第二表面，直到所述开口延伸一直穿过所述第一晶圆，而变成通孔，（f）施加一层粘胶层到所述第二表面，并图案化所述粘胶层以至少去除在所述通孔区域内的粘胶，将已经执行步骤（a）到（c）的第二晶圆粘贴到所述粘胶层，接着在所述第二晶圆上执行步骤（e）和（f），然后在随后的晶圆上重复步骤（a）到（c）和（e）到（f），直到完成晶圆叠层，在最后的晶圆上省略步骤（f），其中在步骤（f）所述粘胶层被图案化以定义一个微通道从所述第一晶圆上的一个通孔延伸到所述第二晶圆上的一个通孔，所述晶圆叠层包括至少一对相邻晶圆，它们的通孔是彼此横向移位的，所述横向移位的通孔通过一个在所述相邻晶圆之间界面上延伸的横向的微通道被连接在一起，其中在所述通孔和微通道填充满一种焊料。
3.根据权利要求2所述的方法，其中所述在所述通孔和微通道填充满一种焊料的步骤包括：在第一温度上放置所述晶圆叠层在一个焊室内，允许熔焊料填充满所述晶圆叠层内的所述通孔和微通道，容许所述晶圆叠层冷却，使得所述熔焊料冷却和固化，然后局部加热一部分所述焊室到比所述第一温度更低的第二温度，以便能够从所述焊室移走所述晶圆叠层。
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