CN101542700A - 室温运行的单电子器件及其制造方法 - Google Patents

室温运行的单电子器件及其制造方法 Download PDF

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Publication number
CN101542700A
CN101542700A CNA2008800003271A CN200880000327A CN101542700A CN 101542700 A CN101542700 A CN 101542700A CN A2008800003271 A CNA2008800003271 A CN A2008800003271A CN 200880000327 A CN200880000327 A CN 200880000327A CN 101542700 A CN101542700 A CN 101542700A
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CN
China
Prior art keywords
manufacture method
grid
active area
film
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008800003271A
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English (en)
Chinese (zh)
Inventor
崔重范
李昌根
金珉湜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Academic Cooperation Foundation of CBNU
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Industry Academic Cooperation Foundation of CBNU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry Academic Cooperation Foundation of CBNU filed Critical Industry Academic Cooperation Foundation of CBNU
Publication of CN101542700A publication Critical patent/CN101542700A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNA2008800003271A 2007-09-14 2008-09-11 室温运行的单电子器件及其制造方法 Pending CN101542700A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020070093890A KR100966008B1 (ko) 2007-09-14 2007-09-14 상온동작 단전자 소자 및 그 제조방법
KR1020070093890 2007-09-14
KR1020080083827 2008-08-27

Publications (1)

Publication Number Publication Date
CN101542700A true CN101542700A (zh) 2009-09-23

Family

ID=40695657

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008800003271A Pending CN101542700A (zh) 2007-09-14 2008-09-11 室温运行的单电子器件及其制造方法

Country Status (2)

Country Link
KR (1) KR100966008B1 (ko)
CN (1) CN101542700A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054871A (zh) * 2010-10-27 2011-05-11 清华大学 一种高速半导体器件结构及其形成方法
CN102148250A (zh) * 2011-01-07 2011-08-10 清华大学 高速低噪声半导体器件结构及其形成方法
CN101800242B (zh) * 2009-02-11 2013-03-06 中国科学院微电子研究所 用纳米晶材料作为库仑岛的纳米电子器件及其制作方法
WO2013033875A1 (zh) * 2011-09-07 2013-03-14 中国科学院微电子研究所 后栅工艺中电极和连线的制造方法
CN107492493A (zh) * 2016-06-12 2017-12-19 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468834B1 (ko) * 1998-10-09 2005-04-06 삼성전자주식회사 산화공정을 이용한 단일전자 트랜지스터 및그 제조방법
KR100408520B1 (ko) * 2001-05-10 2003-12-06 삼성전자주식회사 게이트 전극과 단전자 저장 요소 사이에 양자점을구비하는 단전자 메모리 소자 및 그 제조 방법
KR100418182B1 (ko) * 2001-11-28 2004-02-11 학교법인 한국정보통신학원 실리콘 단전자 기억 소자의 제작방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800242B (zh) * 2009-02-11 2013-03-06 中国科学院微电子研究所 用纳米晶材料作为库仑岛的纳米电子器件及其制作方法
CN102054871A (zh) * 2010-10-27 2011-05-11 清华大学 一种高速半导体器件结构及其形成方法
CN102148250A (zh) * 2011-01-07 2011-08-10 清华大学 高速低噪声半导体器件结构及其形成方法
WO2013033875A1 (zh) * 2011-09-07 2013-03-14 中国科学院微电子研究所 后栅工艺中电极和连线的制造方法
CN107492493A (zh) * 2016-06-12 2017-12-19 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法
CN107492493B (zh) * 2016-06-12 2021-03-09 中芯国际集成电路制造(上海)有限公司 晶体管的形成方法

Also Published As

Publication number Publication date
KR100966008B1 (ko) 2010-06-24
KR20090028360A (ko) 2009-03-18

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Application publication date: 20090923