CN101506948A - 切割/芯片焊接膜 - Google Patents
切割/芯片焊接膜 Download PDFInfo
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- CN101506948A CN101506948A CNA2006800556162A CN200680055616A CN101506948A CN 101506948 A CN101506948 A CN 101506948A CN A2006800556162 A CNA2006800556162 A CN A2006800556162A CN 200680055616 A CN200680055616 A CN 200680055616A CN 101506948 A CN101506948 A CN 101506948A
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- Prior art keywords
- workpiece
- chip
- adhesive phase
- gluing
- glue
- Prior art date
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Abstract
本发明的切割/芯片焊接膜是在支撑基材上依次层压有粘合剂层和芯片胶粘用胶粘剂层的切割/芯片焊接膜,其特征在于,上述粘合剂层的厚度为10~80μm,23℃下的储藏弹性率为1×104~1×1010Pa。
Description
技术领域
本发明涉及一种切割/芯片焊接膜(ダイシング·ダイボンドフイルム)。切割/芯片焊接膜,在切割前在工件(半导体晶片等)上付设用于粘接碎片工件(チツプ状ワ—ク)(半导体芯片等)与电极构件的胶粘剂的状态下,用于切割工件。另外,本发明涉及使用该切割/芯片焊接膜的碎片工件的固定方法以及半导体装置的制造方法。此外,还涉及通过该固定方法或制造方法胶粘固定碎片工件而得到的半导体装置。
背景技术
在以往的半导体装置的制造中,在引线框和电极构件上粘接半导体芯片时一直采用银浆。所述粘接处理是在引线框的压料垫等上涂布浆料后,在其上搭载半导体芯片并使浆料层固化来进行。
电路图案形成的半导体晶片,根据需要通过背面研磨进行厚度调节(背面研磨工序)后,切割成半导体芯片(切割工序),将该半导体芯片用胶粘剂粘接于引线框等被粘体上(芯片安装工序),再进行引线接合工序。在切割工序中,为了除去切割屑,通常在适度的液压下洗涤半导体晶片。
在该处理工序中,在将胶粘剂另外涂布于引线框和形成芯片的方法中,胶粘剂层的均匀化困难,另外胶粘剂的涂布需要特殊装置和长时间。因此,在下述专利文献1中提出了一种切割/芯片焊接膜,其在切割工序中胶粘保持半导体晶片的同时,也提供芯片安装工序中所需要的芯片粘接用的胶粘剂层。
该切割/芯片焊接膜,是通过以能剥离的方式在支撑基材上设置胶粘剂层而形成的,在该胶粘剂层的保持下对半导体晶片进行切割后,将支撑基材拉伸使形成芯片与胶粘剂层一起剥离,将其分别回收,通过该胶粘剂层粘接于引线框等被粘体上。
在此,切割/芯片焊接膜,要求在半导体晶片切割时具有使支撑基材与胶粘剂层不发生剥离的强粘合力,而与此相对,要求在切割后半导体芯片可以与胶粘剂层一起容易地从支撑基材上剥离。
但是,如果为上述结构的切割/芯片焊接膜,则难以调节胶粘剂层的粘合力。因此,公开了通过在支撑基材与胶粘剂层之间设置粘合剂层来使粘合性与剥离性达到良好平衡而构成的切割/芯片焊接膜(参照下述专利文献2)。
但是,在切割工序中,切割电路图案形成的半导体晶片时,由切割/芯片焊接膜产生丝状屑,有时粘附于半导体芯片和切割/芯片焊接膜上。该丝状屑还会在后续工序即芯片安装工序、引线接合工序中粘附于作为被粘体的有机衬底和引线框或半导体芯片上,不仅使作业性显著下降,而且半导体芯片的可靠性也会下降,成为较大的课题。
专利文献1:日本特开昭60-57642号公报(第1页)
专利文献2:日本特开平2-248064号公报(第1页)
发明内容
本发明是鉴于上述问题而完成的发明,其目的在于提供抑制丝状屑产生、并防止半导体芯片品质下降的切割/芯片焊接膜、使用该切割/芯片焊接膜的碎片工件的固定方法、通过该方法得到的半导体装置及其制造方法。
本发明人为了实现上述目的进行了研究,结果发现:丝状屑的产生是由于切割刀片对支撑基材的切割而引起的,通过采用下述结构,完成了本发明。
即,本发明的切割/芯片焊接膜为了解决上述课题,其在支撑基材上依次层压粘合剂层和芯片胶粘用胶粘剂层,其特征在于,上述粘合剂层的厚度为10~80μm,23℃下的储藏弹性率为1×104~1×1010Pa。
上述结构的发明通过使粘合剂层的厚度为10~80μm、使该粘合剂层在23℃下的储藏弹性率在1×104~1×1010Pa的范围内,由此将粘合剂层的弹性成分(即硬度)设定在规定范围内。即,通过设定在上述数值范围内,使切割时的切深止于粘合剂层,防止支撑基材被切割。其结果可以防止丝状屑的产生。若储藏弹性率不足1×104Pa,则例如在切割工件时工件通过振动而移动。但是,通过设定在上述数值范围内,抑制该现象,其结果实现了减少碎片状化工件的一部分破损的所谓的碎屑。另外,若储藏弹性率超过1×1010Pa,则有时粘合剂层对于芯片胶粘用胶粘剂层的粘合力不足。但是,若在上述数值范围内,则抑制粘合力过度降低,其结果在切割/芯片焊接膜上确实地固定工件,可以抑制切割时的芯片分散和错位的产生。
上述粘合剂层优选为放射线固化型粘合剂层。
优选至少在与上述芯片胶粘用胶粘剂层上的工件贴附部分对应的部分上满足上述粘合剂层中的储藏弹性率的数值范围。
在上述粘合剂层与芯片胶粘用胶粘剂层的界面中,与上述工件贴附部分对应的界面上的剥离性优选大于与其以外部分的一部分或全部对应的界面上的剥离性。
上述界面的剥离性关系是通过制成如下结构而得到的,所述结构为:上述粘合剂层对于芯片胶粘用胶粘剂层的粘合力中,与上述工件贴附部分对应的部分的粘合力小于与其以外部分的一部分或全部对应的部分的粘合力。
通过制成上述结构,在与工件贴附部分以外的部分的一部分或全部对应的部分中,与对应于工件贴附部分的部分比较,处于粘合剂层与芯片胶粘用胶粘剂层适度地胶粘的状态。其结果是,例如即使在切割和扩展时,也可以使粘合剂层与芯片胶粘用胶粘剂层没有轻易地剥离。另一方面,在与工件贴附部分对应的部分中,与其他部分比较,可以轻易地剥离。因此,即使对于例如超过10mm×10mm这样的大型芯片而言,也不会产生切割不良,在切割后可以容易地将所得到的碎片工件剥离,得到拾取性优异的切割/芯片焊接膜。即,上述结构使切割等时的保持力与拾取时的剥离性达到良好平衡。
上述芯片胶粘用胶粘剂层的粘合力中,在上述工件贴附部分中对于工件的粘合力优选大于在与上述工件贴附部分对应的部分中对于粘合剂层的粘合力。
通过采用上述结构,例如在拾取将工件切割而得到的碎片工件时,使该碎片工件在附设芯片胶粘用胶粘剂层的状态下容易地从粘合剂层上剥离。
上述工件贴附部分以外的部分的一部分优选为切割环贴附部分。
上述芯片胶粘用胶粘剂层的粘合力中,在上述切割环贴附部分中对于切割环的粘合力优选小于在与上述切割环贴附部分对应的部分中对于粘合剂层的粘合力。
通过采用上述结构,可以使切割环容易地从芯片胶粘用胶粘剂层上剥离,且防止在该切割环上粘合有芯片胶粘用胶粘剂层的状态下从粘合剂层上剥离。
上述芯片胶粘用胶粘剂层作为工件贴附部分设置于上述粘合剂层上的一部分,优选在上述粘合剂层中的与工件贴附部分对应的部分的粘合力小于其以外部分的粘合力。
由此,即使在芯片胶粘用胶粘剂层作为工件贴附部分设置于上述粘合剂层上的一部分的结构的情况下,在拾取碎片工件时,也可以使该碎片工件在附设芯片胶粘用胶粘剂层的状态下从粘合剂层上容易地剥离。
上述芯片胶粘用胶粘剂层的粘合力中,在上述工件贴附部分中对于工件的粘合力优选大于在与上述工件贴附部分对应的部分中对于粘合剂层的粘合力。
由此,与上述同样,在拾取碎片工件时,该碎片工件可以在附设芯片胶粘用胶粘剂层的状态下从粘合剂层上容易地剥离。
上述粘合剂层由放射线固化型粘合剂形成,与上述工件贴附部分对应的部分优选为通过放射线照射而固化的状态。
另外,本发明的碎片工件的固定方法,为了解决上述课题,其是使用上述切割/芯片焊接膜的碎片工件的固定方法,其特征在于,具有:在上述芯片胶粘用胶粘剂层的工件贴附部分上压接工件的工序;将上述工件与上述芯片胶粘用胶粘剂层一起切割成碎片状、并在上述粘合剂层停止切割的工序;将上述碎片工件与上述芯片胶粘用胶粘剂层的工件贴附部分一起从上述粘合剂层上剥离的工序;通过上述芯片胶粘用胶粘剂层的工件贴附部分将碎片工件胶粘固定于半导体元件的工序。
上述方法的发明,由于使用具有厚度为10~80μm、23℃下的储藏弹性率为1×104~1×1010Pa的粘合剂层的切割/芯片焊接膜,因此在将工件至少与芯片胶粘用胶粘剂层一起切割成碎片状时,在粘合剂层停止切割,防止支撑基材被切割。其结果是,可以防止由支撑基材的切割所引起的丝状屑的产生。另外,还能抑制在切割时工件因振动而引起的移动。其结果是,可以减少碎片工件的碎屑。另外,由于能够抑制粘合剂层对于芯片胶粘用胶粘剂层的粘合力不足,因此将工件确切地固定于切割/芯片焊接膜上,减少切割时芯片分散和错位的产生。
另外,本发明的半导体装置,为了解决上述课题而具有如下特征,采用上述碎片工件的固定方法,通过上述芯片胶粘用胶粘剂层的工件贴附部分将碎片工件胶粘固定于半导体元件而成。
另外,本发明的半导体装置的制造方法,为了解决上述课题而具有如下特征,其是使用上述切割/芯片焊接膜的半导体装置的制造方法,具有:在上述芯片胶粘用胶粘剂层的工件贴附部分上压接工件的工序;将上述工件与上述芯片胶粘用胶粘剂层一起切割成碎片状、并在上述粘合剂层停止切割的工序;将上述碎片工件与上述芯片胶粘用胶粘剂层中的胶粘剂一起从上述粘合剂层上剥离的工序;通过上述胶粘剂将上述碎片工件胶粘固定于半导体元件的工序。
上述方法的发明中,由于使用具有厚度为10~80μm、23℃下的储藏弹性率为1×104~1×1010Pa的粘合剂层的切割/芯片焊接膜,因此可以防止支撑基材被切割,其结果防止丝状屑的产生。另外,在减少切割时碎片工件的碎屑的同时,还能抑制芯片分散和错位的发生。
另外,本发明的半导体装置,为了解决上述课题而具有如下特征,采用上述半导体装置的制造方法,通过上述芯片胶粘用胶粘剂层中的胶粘剂将碎片工件胶粘固定于半导体元件而成。
本发明通过采用上述所说明的方法可以达到以下效果。
即,根据本发明的切割/芯片焊接膜,由于具有厚度为10~80μm、23℃下的储藏弹性率为1×104~1×1010Pa的粘合剂层,因此防止在工件切割时支撑基材被切断,其结果可以防止丝状屑的产生。其结果是,能防止丝状屑粘附在碎片工件上等而产生污染。
附图说明
图1是表示本发明的切割/芯片焊接膜的一个例子的截面示意图。
图2是用于说明上述切割/芯片焊接膜中粘合剂层与芯片胶粘用胶粘剂层3的剥离性关系的截面示意图。
图3是表示本发明的切割/芯片焊接膜的另一个例子的截面示意图。
图4是表示在上述切割/芯片焊接膜上贴附半导体晶片和切割环的状态的平面图。
图5是表示本发明的切割/芯片焊接膜的另外一个例子的截面示意图。
图6是表示将工件切割成碎片状时的状态的截面示意图。
符号说明
1 支撑基材
2 粘合剂层
2a 与工件贴附部分对应的部分
2b 与工件贴附部分以外的部分的一部分或全部对应的部分
3 芯片胶粘用胶粘剂层
3a 工件贴附部分
3b 工件贴附部份以外的部分
10~12 芯片焊接膜
13 切割刀片
具体实施方式
以下参照附图对本发明的实施方式进行说明。其中,省略无需说明的部分,另外为了易于说明,存在放大或缩小等后而进行图示的部分。
图1是表示本发明的切割/芯片焊接膜的一个例子的截面示意图。如图1所示,切割/芯片焊接膜10为在支撑基材1上依次层压有粘合剂层2、芯片胶粘用胶粘剂层3以及可剥离的保护层4的结构。
上述支撑基材1是成为切割/芯片焊接膜10的强度母体的基材。作为支撑基材1,例如,可以列举:由低密度聚乙烯、直链状聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯共聚物、乙烯-丙烯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺纤维(纸)、玻璃、玻璃纤维、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、硅树脂、它们的混合物等形成的塑料膜。另外,还可以列举上述树脂的交联体等聚合物。
另外,作为支撑基材1,可以使用无延伸的支撑基材。此外,还可以根据需要适当使用实施单轴或双轴拉伸处理后的支撑基材。如果为由通过延伸处理等而赋予了热收缩性的树脂片构成的支撑基材1,则通过使该支撑基材1在切割后进行热收缩,减小粘合剂层2与芯片胶粘用胶粘剂层3的胶粘面积,从而实现碎片工件回收的容易化。
为了提高支撑基材1的表面与邻接的层的密合性、保持性等,可以对支撑基材1的表面实施惯用的表面处理。作为该方法,可以列举例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离放射线处理等化学上或物理上的处理、底涂剂(例如后述的粘合物质)的涂敷处理等。
上述支撑基材1的构成材料可以适宜地选择使用同种类或不同种类的材料。另外根据需要,可以使用将多种类混合制成的材料。另外,作为支撑基材1,为了赋予抗静电性,还可以使用在上述塑料膜上设置有由金属、合金或它们的氧化物等组成的厚度为约30~约的导电性物质蒸镀层的膜。此外,也可以使用使上述膜之间或与其他膜贴合而成的层压体等。另外,支撑基材1还可以是单层或将使用上述材料的膜等以2层以上进行多层化得到的层压膜。另外,当粘合剂层2为放射线固化型时,使用可以使X射线、紫外线、电子射线等放射线的至少一部分透过的材料。
另外,对于粘合膜,为了防止在其胶粘时或剥离时等静电的产生以及通过由此引起的半导体晶片带电而导致的电路破坏等,还可以具有抗静电性。关于抗静电性的赋予,可以采用向支撑片或粘合剂层中添加抗静电剂或导电剂、向支撑片附设由电荷移动络合物或金属膜等形成的导电层等适宜的方式来进行,优选不易产生可能使半导体晶片变质的杂质离子的方式。
支撑基材1的厚度例如为约5~约200μm,只要具有能够耐受由上述热收缩引起的芯片胶粘用胶粘剂层3的张力的厚度即可,没有特殊限制。另外,该支撑基材1可以是使紫外线透过的基材。
上述粘合剂层2的厚度为约10~约80μm,具有在23℃下的储藏弹性率为1×104~1×1010Pa的物性。使厚度和在23℃下的储藏弹性率在上述数值范围内,是为了将切割时的切深止于粘合剂层2的范围,从而防止到达支撑基材1。使粘合剂层2的厚度和储藏弹性率的数值范围用于充分地发挥本发明的作用/效果的切割条件,例如切割速度为5~150mm/秒的范围,且切割刀片的转速为25000~50000rpm的范围内。
另外,通过使23℃下的储藏弹性率在上述数值范围内,这是因为在防止碎屑的产生的同时,在拾取碎片工件时防止出现芯片分散或错位。作为上述储藏弹性率,更优选为1×107~1×1010Pa,特别优选为1×107~1×109Pa。当储藏弹性率不足1×107Pa时,切割容易进行至支撑基材1,丝状屑的产生增加。此外,通过在切割工序中使碎片工件容易移动,也产生碎屑。另一方面,若大于1×1010Pa,则在切割工序中易产生芯片分散,另外在芯片安装工序中,在拾取芯片时产生芯片分散、错位。此外,存在切割刀片的磨损量增加、碎屑产生率增多的倾向。
另外,使粘合剂层2的厚度在上述数值范围内,是为了兼具有防止芯片切割面的欠缺以及固定保持芯片胶粘用胶粘剂层3等。作为其厚度,更优选为20~70μm,进一步优选为20~60μm,特别优选为20~50μm。
上述粘合剂层2以与芯片胶粘用胶粘剂层3的剥离性满足以下关系的方式而构成(参照图2)。即,在与芯片胶粘用胶粘剂层3的工件贴付部分3a(以下有时称为芯片胶粘用胶粘剂层3a)对应的界面A、和与其以外的部分3b(以下有时称为芯片胶粘用胶粘剂层3b)对应的界面B之间,存在界面A的剥离性>界面B的剥离性的关系。为了满足这种关系,粘合剂层2设计成为:例如与工件贴付部分3a(后述)对应的部分2a(以下有时称为粘合剂层2a)的粘合力<与其以外的部分的一部分或全部对应的部分2b(以下有时称为粘合剂层2b)的粘合力。
上述粘合剂层2a的粘合力,基于常温(23℃)下的粘合力(90度的剥离值、剥离速度为300mm/分钟),从晶片的固定保持力和形成的芯片的回收性等观点出发,优选为0.5N/20mm以下,进一步优选为0.01~0.42N/20mm,特别优选为0.01~0.35N/20mm。另一方面,粘合剂层2b的粘合力优选为约0.5~约20N/20mm。即使粘合剂层2a的剥离粘合力低,也可以通过粘合剂层2b的粘合力来抑制芯片分散等的发生,在晶片加工中发挥充分的保持力。
作为在粘合剂层2中使其面内的粘合力不同的方法,可以列举例如放射线固化型粘合剂的使用。如果通过使用放射线固化型粘合剂对粘合剂层2进行部分性的放射线照射,则在照射部分可以增大构成该照射部分的高分子化合物的交联度,其结果可以降低粘合力。由此,在本实施方式中,对粘合剂层2a照射放射线使其固化,使粘合力显著下降。另一方面,对粘合剂层2b不照射放射线而维持充分的粘合力。由此,粘合剂层2能够以良好的胶粘/剥离平衡来支撑芯片胶粘用胶粘剂层3。即,在粘合剂层2b中,与芯片胶粘用胶粘剂层3充分胶粘,在粘合剂层2a中,容易与芯片胶粘用胶粘剂层3剥离,实现拾取性的提高。
作为构成粘合剂层2的粘合剂,没有特殊限制,在本发明中优选上述放射线固化型粘合剂。这是由于粘合剂层2a与粘合剂层2b的粘合力容易出现差异。放射线固化型粘合剂,通过照射紫外线等放射线,可以增大交联度而容易地使其粘合力降低。因此,通过放射线照射与工件贴附部分3a对应的粘合剂层2a并使其固化,可以容易形成粘合力显著降低的区域。由于芯片胶粘用胶粘剂层3的工件贴附部分3a位于固化、粘合力下降后的粘合剂层2a上,因此粘合剂层2a与工件贴附部分3a的界面具有在拾取时容易剥离的性质。
另一方面,由于未照射放射线的粘合剂层2b含有未固化的放射线固化型粘合剂而构成,因而具有充分的粘合力。因此,粘合剂层2b与芯片胶粘用胶粘剂层3确实地粘合,其结果是,作为粘合剂层2整体,即使在切割时也能确保将芯片胶粘用胶粘剂层3充分地粘接的保持力。这样含有放射线固化型粘合剂而构成的粘合剂层2,能够以良好的胶粘/剥离平衡在衬底或碎片工件等被粘体(称为半导体元件)上支撑用于粘接碎片工件(半导体芯片等)的芯片胶粘用胶粘剂层3。
作为构成粘合剂层2的粘合剂,没有特殊限制,本发明中优选放射线固化型粘合剂。作为放射线固化型粘合剂,可以没有特别限制地使用具有碳-碳双键等放射线固化性官能团、且显示粘合性的粘合剂。
作为放射线固化型粘合剂,可以例示例如:在上述丙烯酸类粘合剂、橡胶类粘合剂、硅酮类粘合剂、聚乙烯基醚类粘合剂等通常的压敏性粘合剂中混合有放射线固化性单体成分或低聚物成分的添加型的放射线固化型粘合剂。作为上述压敏性粘合剂,从避忌半导体晶片或玻璃等的污染的电子零件利用超纯水或酒精等有机溶剂的清洗性等方面考虑,优选将丙烯酸类聚合物作为原料聚合物的丙烯酸类粘合剂。
作为上述丙烯酸类聚合物,可以列举使用例如(甲基)丙烯酸烷基酯(例如:甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳原子数为1~30、尤其是碳原子数为4~18的直链状或支链状烷基酯等)及(甲基)丙烯酸环烷基酯(例如:环戊酯、环己酯等)中的1种或2种以上作为单体成分的丙烯酸类聚合物等。需要说明的是,(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,本发明的(甲基)全部为相同含义。
对上述丙烯酸类聚合物而言,为了重整凝聚力、耐热性等,可以根据需要含有与可以与上述(甲基)丙烯酸烷基酯或环烷基酯共聚的其他单体成分对应的单元。作为这样的单体成分,可以列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、丁烯酸等含羧基单体;马来酸酐、衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟乙酯、(甲基)丙烯酸-2-羟丙酯、(甲基)丙烯酸-4-羟丁酯、(甲基)丙烯酸-6-羟己酯、(甲基)丙烯酸-8-羟辛酯、(甲基)丙烯酸-10-羟癸酯、(甲基)丙烯酸-12-羟基十二烷基酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙烷磺酸、(甲基)丙烯酰胺丙烷磺酸、(甲基)丙烯酸磺基丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;2-羟乙基丙烯酰基磷酸酯等含磷酸基单体;丙烯酰胺、丙烯腈等。这些可以共聚的单体成分可以使用1种或2种以上。这些可以共聚的单体的用量优选为全部单体成分的40重量%以下。
另外,对上述丙烯酸类聚合物而言,为了使其进行交联,根据需要,也可以含有多官能性单体等作为共聚用单体成分。作为这种多官能性单体,可以列举例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、(甲基)丙烯酸环氧基酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能性单体也可以使用1种或2种以上。从粘合特性等方面考虑,多官能性单体的用量优选为全部单体成分的30重量%以下。
上述丙烯酸类聚合物的制备,例如可以对1种或2种以上的成分单体的混合物采用溶液聚合方式、乳化聚合方式、本体聚合方式或悬浊聚合方式等适宜的方式来进行。粘合剂层,从防止晶片污染等观点出发,优选为抑制低分子量物质的含量的组成,基于此观点,优选以重均分子量为30万以上、特别是40万~300万的丙烯酸类聚合物为主要成分,因此粘合剂可以成为通过内部交联方式或外部交联方式等得到的适宜的交联型。
另外,为了控制粘合剂层2的交联密度,例如可以采用如下适宜的方式:使用多官能异氰酸酯类化合物、环氧类化合物、三聚氰胺类化合物、金属盐类化合物、金属螯合物类化合物、氨基树脂类化合物或过氧化物等适宜的外部交联剂进行交联处理的方式;混合具有2个以上碳-碳双键的低分子化合物并通过照射能量射线等来进行交联处理的方式等。使用外部交联剂时,其用量取决于与应该交联的原料聚合物之间的平衡,另外,根据作为粘合剂的使用用途来适当确定。通常,相对于上述原料聚合物100重量份,优选混合约5重量份以下,更优选混合0.1~5重量份。另外,在粘合剂中,根据需要,除了上述成分以外还可以使用各种增粘剂、抗老化剂等添加剂。
作为所混合的放射线固化性单体成分,可以列举例如:氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇一羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。
另外,放射线固化性的低聚物成分,可以列举氨基甲酸酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物,其分子量优选在约100~约30000的范围。放射线固化性的单体成分或低聚物成分的混合量,可以根据所述粘合剂层的种类适当地决定能够使粘合剂层的粘合力降低的量。通常,相对于构成粘合剂的丙烯酸类聚合物等原料聚合物100重量份,例如为约5~约500重量份,优选约70~约150重量份。
另外,作为放射线固化型粘合剂,除上述添加型的放射线固化型粘合剂以外,可列举出:使用在聚合物侧链或主链中或主链末端具有碳-碳双键的物质作为原料聚合物的内在型放射线固化型粘合剂。内在型放射线固化型粘合剂不必含有作为低分子量成分的低聚物成分等、或者含有的不多,因此,低聚物成分等不会历时性地在粘合剂中移动,能够形成具有稳定的层结构的粘合剂层,所以优选。
上述具有碳-碳双键的原料聚合物,可以没有特别地限制地使用具有碳-碳双键、并且具有粘合性的材料。作为这种原料聚合物,优选将丙烯酸类聚合物作为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架,可列举出上述已例示的丙烯酸类聚合物。
向上述丙烯酸类聚合物导入碳-碳双键的方法没有特别限制,可以采用各种方法,而碳-碳双键导入聚合物侧链的方法,其分子设计较容易。例如可以列举如下方法:预先使具有官能团的单体与丙烯酸类聚合物进行共聚后,使可与该官能团反应的官能团及具有碳-碳双键的化合物,在维持碳-碳双键的放射线固化性的状态下进行缩合或加成反应。
作为这些官能团的组合的例子,可列举出羧酸基和环氧基、羧酸基和氮杂环丙烷基、羟基和异氰酸酯基等。在这些官能团的组合中,从容易跟踪反应的角度考虑,优选羟基和异氰酸酯基的组合。另外,利用这些官能团的组合,只要是生成具有上述碳-碳双键的丙烯酸类聚合物的组合,则官能团可以在丙烯酸类聚合物和上述化合物的任意一侧,但在上述优选的组合中,优选丙烯酸类聚合物具有羟基、上述化合物具有异氰酸酯基的情况。在这种情况下,作为具有碳-碳双键的异氰酸酯化合物,例如可列举出:甲基丙烯酰基异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。另外,作为丙烯酸类聚合物,使用将上述例示的含羟基单体或2-羟乙基乙烯基醚、4-羟丁基乙烯基醚、二乙二醇一乙烯基醚的醚类化合物等共聚而成的聚合物。
上述内在型的放射线固化型粘合剂可以单独使用上述具有碳-碳双键的原料聚合物(特别是丙烯酸类聚合物),但在不使特性变差的程度下,也可以混合上述放射线固化性的单体成分或低聚物成分。通常,相对于原料聚合物100重量份,放射线固化性的低聚物成分等在30重量份以下的范围内,优选在0~10重量份的范围。
在利用紫外线等进行固化的情况下,在上述放射线固化型粘合剂中含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、1-羟基环己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1等苯乙酮类化合物;苯偶姻乙基醚、苯偶姻异丙基醚、茴香偶姻甲基醚等苯偶姻醚类化合物;2-甲基-2-羟基苯丙酮等α-酮类化合物、苄基二甲基缩酮等缩酮类化合物;2-萘磺酰氯等芳香族磺酰氯类化合物;1-苯酮-1,1-丙烷二酮-2-(邻乙氧基羰基)肟等光活性肟类化合物;二苯甲酮、苯酰苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮类化合物;樟脑醌;卤化酮;酰基膦化氧;酰基磷酸酯等。相对于构成粘合剂的丙烯酸类聚合物等原料聚合物100重量份,光聚合引发剂的混合量例如为约0.05~约20重量份。
另外,作为用于粘合剂层2的形成的放射线固化型粘合剂,可以列举例如:日本特开昭60-196956号公报中所公开的、含有具有2个以上不饱和键的加成聚合性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物、和羰基化合物、有机硫化合物、过氧化物、胺、鎓盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。作为上述具有2个以上不饱和键的加成聚合性化合物,可以列举例如:丙烯酸或甲基丙烯酸的多元醇类酯或低聚酯、环氧类或氨基甲酸酯类化合物等。
上述光聚合性化合物或光聚合引发剂的混合量,通常分别是原料聚合物每100重量份为10~500重量份,优选为0.05~20重量份。除了这些混合成分以外,还可以根据需要追加混合乙二醇二缩水甘油醚等在分子中具有1个或2个以上环氧基的环氧基官能性交联剂,从而可以提高粘合剂的交联效率。
在使用上述放射线固化型粘合剂的粘合剂层2中,根据需要还可以含有通过放射线照射而着色的化合物。将通过放射线照射而着色的化合物包含在粘着剂层2中,由此,可以仅对被放射线照射的部分进行着色。由此,例如也可以将与工件贴附部分3a对应的粘合剂层2a进行着色。其结果是,通过目视即可判明对粘着剂层2是否已照射了放射线,易于识别工件贴附部分3a,工件的贴合变得容易。另外,当利用光传感器等对半导体元件进行检测时,其检测精度提高,在半导体元件的拾取时不会产生误操作。
通过放射线照射而着色的化合物是在放射线照射前为无色或淡色、但通过放射线照射变成有色的化合物。作为这种化合物的优选的具体例子,可列举出无色染料。作为无色染料,优选使用惯用的三苯基甲烷类、荧烷类、吩噻嗪类、金胺类、螺吡喃类。具体可列举出:3-[N-(对甲苯氨基)]-7-苯胺基荧烷、3-[N-(对甲苯基)-N-甲基氨基]-7-苯胺基荧烷、3-[N-(对甲苯基)-N-乙基氨基]-7-苯胺基荧烷、3-二乙基氨基-6-甲基-7-苯胺基荧烷、结晶紫内酯、4,4’,4”-三双甲基氨基三苯基甲醇、4,4’,4”-三双甲基氨基三苯基甲烷等。
作为与这些无色染料一起优选使用的显色剂,可以列举一直以来所使用的酚醛树脂的初期聚合物、芳香族羧酸衍生物、活性白土等电子接受体。另外,改变色调时也可以将各种发色剂组合使用。
这种通过放射线照射而着色的化合物,可以事先被有机溶剂等溶解后包含在放射线固化型粘合剂中,另外也可以制成微粉末状包含在该粘合剂层2中。期望该化合物的使用比例在粘合剂层2中为0.01~10重量%,优选为0.5~5重量%。该化合物的比例超过10重量%时,照射在粘合剂层2上的放射线过多地被该化合物吸收,因而有时使所述粘合剂层2a的固化不充分,不能充分降低粘合力。另一方面,若以化合物的比例不足0.01重量%的量来使用,则在放射线照射时粘合片有时未充分着色,在半导体元件的拾取时易产生误操作。
通过放射线固化型粘合剂形成粘合剂层2时,可以列举如下方法:在支撑基材1上形成放射线固化型粘合剂层2后,对与工件贴附部分3a对应的部分部分性地照射放射线使其固化,形成粘合剂层2a。部分性的放射线照射,可以通过形成有与工件贴附部分3a以外的部分(3b等)对应的图案的光掩模来进行。另外,可以列举点式照射紫外线而使其固化的方法等。放射线固化型粘合剂层2的形成,可以通过将设在隔离物上的粘合剂层转印到基材1上来进行。部分性的放射线固化也可以对设置于隔离物上的放射线固化型的粘合剂层2进行。
另外,当通过放射线固化型粘合剂来形成粘合剂层2时,使用支撑基材1的至少单面的与工件贴附部分3a对应的部分以外的部分的全部或一部分被遮光的支撑基材1,在其上形成放射线固化型粘合剂层2后,照射放射线,使与工件贴附部分3a对应的部分固化,可以形成粘合力下降的粘合剂层2a。作为遮光材料,可以使用能够在支撑膜上成为光掩模的材料,可以通过印刷、蒸镀等来形成。根据所述制造方法,可以高效地制造本发明的切割/芯片焊接膜。
另外,放射线照射时,在由氧引起固化阻碍的情况下,优选由放射线固化型的粘合剂层2的表面通过几种方法来遮断氧(空气)。例如,可以列举:将上述粘合剂层2的表面用隔离物覆盖的方法、在氮气气氛中进行紫外线等放射线的照射的方法等。
粘着剂层2的厚度没有特别限定,但从兼具有防止芯片切断面的欠缺及固定保持胶粘层等方面考虑,优选为约1~约50μm。优选2~30μm、更优选5~25μm。
芯片胶粘用胶粘剂层3具有如下功能:在将压接于该层上的工件(半导体晶片等)切割成碎片状时,与工件密合来支撑,在安装碎片工件切割片(半导体芯片等)时,作为该切割片与衬底或碎片工件切割片的胶粘剂层起作用。特别是作为芯片胶粘用胶粘剂层3,具有在工件切割时不使切割片飞溅的程度的胶粘性是很重要的。
芯片胶粘用胶粘剂层3可以通过通常的芯片胶粘剂来形成。作为芯片胶粘剂,优选能形成碎片状的胶粘剂。作为芯片胶粘剂的材料,具体可以优选使用例如由热塑性树脂、热固性树脂形成的材料。这些材料可以单独使用或2种以上组合使用。另外,芯片胶粘用胶粘剂层3优选能够在70℃以下与半导体晶片等工件或切割环粘合。更优选能够在常温下粘合。
作为用作芯片胶粘剂的热塑性树脂(热塑性芯片胶粘剂),可以列举例如:饱和聚酯树脂、热塑性聚氨酯类树脂、酰胺类树脂(尼龙类树脂)、酰亚胺类树脂等。另外,作为热固性树脂(热固性芯片胶粘剂),可以列举例如:环氧树脂、不饱和聚酯类树脂、热固性丙烯酸类树脂、酚醛类树脂等。作为热固性树脂,优选脱溶剂化、片化、B阶化后的热固性树脂。另外,这些热固性树脂和热塑性树脂的混合物也可以在进行B阶化后的状态下使用。另外,在本发明中,还可以使用玻璃化转变温度高的硅酮类、橡胶类、氨基甲酸酯类、酰亚胺类、丙烯酸类等树脂作为芯片胶粘剂。
另外,为了赋予导电性、提高导热性等,在芯片胶粘用胶粘剂层3中还可以混合导电性物质(导电填料)。作为导电性物质,可以列举银、铝、金、铜、镍、导电性合金等球状、针状、片状的金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。
芯片胶粘用胶粘剂层3可以将玻璃化转变温度不同的热塑性树脂、热固化温度不同的热固性树脂适当组合,具有2层以上的多层结构。另外,由于在工件(半导体晶片等)的切割工序中使用切削水,因此有时芯片胶粘用胶粘剂层3吸湿而得到常态以上的含水率。若在该高含水率的状态下与衬底等胶粘,则在后固化的阶段在胶粘界面上滞留水蒸汽,有时发生浮起。因此,作为芯片胶粘用胶粘剂,制成用芯片胶粘剂夹有透湿性高的膜的结构。由此,在后固化阶段,可以使水蒸汽通过膜而扩散,从而避免所述问题。因此,芯片胶粘用胶粘剂层3可以由依次层压有胶粘剂层、膜、胶粘剂层的多层结构构成。
芯片胶粘用胶粘剂层3兼具有:在切割时胶粘保持工件(半导体晶片等)的功能和将碎片工件切割片(半导体芯片等)胶粘固定于衬底等被粘体的功能。其厚度没有特殊限制,例如为约1~约100μm,优选为约3~约70μm,更优选为约5~约50μm。
芯片胶粘用胶粘剂层3优选设计成:使其工件贴附部分3a对于工件的粘合力与对于粘合剂层2a的粘合力满足对于工件的粘合力>对于粘合剂层2a的粘合力。对于工件的粘合力可以根据工件的种类进行适当调节。
工件贴附部分3a对于粘合剂层2a的粘合力(90度剥离值、剥离速度300mm/分钟)如上所述,优选为0.5N/20mm以下,进一步优选为0.01~0.42N/20mm,特别优选为0.01~0.35N/20mm。另一方面,工件贴附部分3a对于工件的粘合力(条件同上),从切割时、拾取时、芯片焊接时的可靠性、拾取性的观点出发,优选为10~50N/20mm以下,进一步优选为10~30N/20mm。
本发明的切割/芯片焊接膜,在将作为工件的半导体晶片切割时使用切割环(晶片环)的情况下,可以采用以下的结构。图3是表示本发明的切割/芯片焊接膜的另一个例子的截面示意图。图4是表示在切割/芯片焊接膜上贴附半导体晶片和切割环的状态的平面图。如图3所示,切割/芯片焊接膜11为在支撑基材1上具有粘合剂层2’并在该粘合剂层2’上具有芯片胶粘用胶粘剂层3’的结构。芯片胶粘用胶粘剂层3’在上述部分3b的一部分上设有切割环贴附部分3b’。另外,在粘合剂层2’上设有与切割环贴附部分3b’对应的部分2b’(有时称为粘合剂层2b’)。此外,粘合剂层2’设计成:使切割环贴附部分3b’和与其对应而形成的粘合剂层2b’的界面B’的剥离力满足界面A的剥离力>界面B’的剥离力的关系。另外,图2的粘合剂层2中,粘合剂层2a以外的全部为粘合剂层2b,但也可以如图3所示使粘合剂层2a以外的一部分为粘合剂层2b’。
在切割/芯片焊接膜11中,使工件贴附部分3a以外的部分为切割环贴附部分3b’时,优选设计成:使芯片胶粘用胶粘剂层3’的切割环贴附部分3b’中对于切割环的粘合力与对于粘合剂层2b’的粘合力满足对于切割环的粘合力<对于粘合剂层2b’的粘合力。对于切割环的粘合力可以根据切割环的种类进行适当调节。
芯片胶粘用胶粘剂层3’对于粘合剂层2b’的粘合力(条件同上)如上所述优选为约0.5~约20N/20mm。另一方面,芯片胶粘用胶粘剂层3’对于切割环的粘合力(条件同上),从切割和芯片焊接时的作业性的观点出发,优选为0.3~5N/20mm以下,进一步优选为0.5~5N/20mm。
粘合剂层2’中与工件贴附部分3a对应的粘合剂层2a和其以外的粘合剂层2b’设计成:粘合剂层2a的粘合力<粘合剂层2b’的粘合力。对于工件贴附部分3a的粘合剂层2a的粘合力(条件同上)与上述同样优选为0.5/20mm以下,进一步优选为0.01~0.42N/20mm,特别优选为0.01~0.35N/20mm。
本发明的切割/芯片焊接膜可以为仅在粘合剂层2上的贴合工件的部分上设置芯片胶粘用胶粘剂层的结构。图5是表示本发明的切割/芯片焊接膜的另外一个例子的截面示意图。如图5所示,切割/芯片焊接膜12为在支撑基材1上具有粘合剂层2、并在该粘合剂层2上具有芯片胶粘用胶粘剂层3”的结构。
芯片胶粘用胶粘剂层3”对于粘合剂层2a的粘合力(条件同上)如上所述优选为0.5N/20mm以下,进一步优选为0.01~0.42N/20mm,特别优选为0.01~0.35N/20mm。另一方面,芯片胶粘用胶粘剂层3”对于工件的粘合力(条件同上),从切割时、拾取时、芯片焊接时的可靠性、拾取性的观点出发,优选为10~50N/20mm以下,进一步优选为10~30N/20mm。
上述切割/芯片焊接膜10~12的芯片胶粘用胶粘剂层3、3”可以由保护层4来保护。即,保护层4可以任意设置。保护层4具有在用于实际应用之前作为保护芯片胶粘用胶粘剂层3、3”的保护材料的功能。另外,保护层4还可以作为将芯片胶粘用胶粘剂层3、3a转印到粘合剂层2上时的支撑基材来使用。保护层4在切割/芯片焊接膜11~12的芯片胶粘用胶粘剂层3、3”上贴合工件时被剥离。作为保护层4,可以列举聚乙烯、聚丙烯或由氟类剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行表面涂布后的塑料膜或纸等。
本发明的切割/芯片焊接膜10~12将任意设置于芯片胶粘用胶粘剂层3、3”上的隔离物适当剥离后,如下使用。即,在切割/芯片焊接膜10~12的芯片胶粘用胶粘剂层3a(3”)上压接工件,将其胶粘保持并使其固定。采用常规方法进行压接。作为被粘体的工件,例如可以使用半导体晶片、多层衬底、一次密封组件等。在本发明中,作为被粘体或工件,可以优选使用半导体晶片。
然后,如图6所示,将工件切割成碎片状。图6是表示切割的状态的截面示意图。切割至少进行至完全切断芯片胶粘用胶粘剂层3(3’、3”)。对粘合剂层2(2’)进行至切割刀片13的切深达到规定的值,且不达到支撑基材1。作为工件,可以列举例如半导体晶片、多层衬底、一次密封组件等。关于切割,通过利用旋转圆刀等的适当手段将也包含芯片胶粘用胶粘剂层3在内的工件制成碎片工件(半导体芯片等)。
然后,将碎片工件与芯片胶粘用胶粘剂层3的工件贴附部分3a(或芯片胶粘用胶粘剂层3”)一起从粘合剂层2的粘合剂层2a上剥离。拾取的碎片工件通过工件贴附部分3a等胶粘固定于作为被粘体的半导体元件上。作为半导体元件,可以列举:引线框、TAB膜、衬底或另行制作的碎片工件等。被粘体例如可以为容易变形的变形型被粘体,也可以为难以变形的非变形型被粘体(半导体晶片等)。作为被粘体,优选为半导体晶片。当芯片胶粘用胶粘剂层3、3’、3”为热固化型时,通过加热固化将工件胶粘固定于被粘体,使耐热强度提高。另外,通过芯片胶粘用胶粘剂层3a、3”胶粘固定于衬底等的碎片工件可以用于回流焊工序。
另外,切割/芯片焊接膜10~12,为了防止在其胶粘时或剥离时等产生静电以及通过由此引起的工件(半导体晶片等)带电而导致的电路破坏等,可以具有抗静电性。关于抗静电性的赋予,可以采用例如在支撑基材1、粘合剂层2、2’或芯片胶粘用胶粘剂层3、3’、3”中添加抗静电剂或导电性物质的方法、向支撑基材1附设由电荷移动络合物或金属膜等形成的导电层等适宜的方式来进行。作为这些方式,优选为不易产生可能使半导体晶片变质的杂质离子的方式。作为为了赋予导电性、提高热传导性等而混合的导电性物质(导电填料),可以列举银、铝、金、铜、镍、导电性合金等球状、针状、片状的金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。
实施例
以下,例示性地详细说明本发明的优选实施例。但是,该实施例记载的材料或混合量等,只要没有特殊限定的记载,则并不将该发明的范围仅限定于这些,这些只不过是简单的说明例。
(实施例1)
在由厚60μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚20μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜A。关于粘合剂层的厚度的测定方法和紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,使丙烯酸丁酯70重量份、丙烯酸乙酯30重量份、丙烯酸5重量份在乙酸乙酯中通过常规方法进行共聚,得到重均分子量为80万的丙烯酸类聚合物。然后,在该丙烯酸类聚合物100重量份中混合作为交联剂的多官能环氧化合物0.5重量份、作为光聚合性化合物的二季戊四醇一羟基五丙烯酸酯20重量份、作为光聚合引发剂的α-羟基环己基苯基酮1重量份,使这些在作为有机溶剂的甲苯中均匀溶解,得到浓度为30重量%的丙烯酸类粘合剂的溶液。
在此,对粘合膜A在23℃下的储藏弹性率进行测定。其结果为3×108Pa。关于测定方法的详细内容,见后述。
接着,进行芯片胶粘用胶粘剂层的制作。即,相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主要成分的丙烯酸酯类聚合物(根上工业株式会社制、パラクロンW-197CM)100重量份,将多官能异氰酸酯类交联剂3份、环氧树脂(日本环氧树脂株式会社制、エピコ—ト1004)23重量份、酚醛树脂(三井化学株式会社制、ミレツクスXLC-LL)6重量份溶解于甲乙酮中,进行调节使浓度为20重量%。
将该胶粘剂组合物的溶液涂布在由厚50μm的聚对苯二甲酸乙二醇酯膜形成的脱模处理膜上。然后,在120℃下干燥3分钟,形成厚20μm的芯片胶粘用胶粘剂层A。另外,作为脱模处理膜,采用对聚对苯二甲酸乙二醇酯膜进行硅酮脱模处理后的膜。
接着,将芯片胶粘用胶粘剂层A转印到上述由丙烯酸类粘合剂形成的粘合膜A上的粘合剂层侧,得到本实施例的切割/芯片焊接膜。
(实施例2)
在本实施例中,使用以丙烯酸丁酯为主要成分的聚合物(根上工业株式会社制、パラクロンSN-710)代替以丙烯酸乙酯-甲基丙烯酸甲酯为主要成分的丙烯酸酯类聚合物,且将粘合膜A的厚度变更为30μm,除此以外,均与上述实施例1同样操作,制作本实施例的切割/芯片焊接膜。
(实施例3)
在由厚80μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚70μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜B。关于紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,使由丙烯酸乙酯50重量份、丙烯酸丁酯50重量份、丙烯酸-2-羟乙酯16重量份构成的混合组合物在甲苯溶液中共聚,得到重均分子量为50万的丙烯酸类聚合物。
然后,使该丙烯酸类聚合物100重量份与20重量份的2-甲基丙烯酰氧乙基异氰酸酯进行加成反应,在聚合物分子内侧链中引入碳-碳双键。此时的侧链的长度以原子数计为13个。在该聚合物100重量份中进一步混合多官能异氰酸酯类交联剂1重量份、苯乙酮类光聚合引发剂3重量份,使这些在作为有机溶剂的甲苯中均匀溶解,得到浓度为20重量%的上述丙烯酸类粘合剂的溶液。
在此,对粘合膜B在23℃下的储藏弹性率进行测定。其结果为4×107Pa。另外,关于测定方法的详细内容,见后述。
接着,除了将厚度变更为10μm以外,与上述实施例1同样操作,进行芯片胶粘用胶粘剂层A的制作。接着,将芯片胶粘用胶粘剂层A转印到上述由丙烯酸类粘合剂形成的粘合膜B上的粘合剂层侧,得到本实施例的切割/芯片焊接膜。
(比较例1)
除了使粘合剂层的厚度为100μm以外,与上述实施例1同样操作,制作本比较例的切割/芯片焊接膜。
(比较例2)
除了使粘合剂层的厚度为3μm以外,与上述实施例3同样操作,制作本比较例的切割/芯片焊接膜。
(比较例3)
在由厚60μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚30μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜C。关于紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,将由丙烯酸丁酯100重量份、丙烯酸2重量份构成的单体混合物使用甲苯200重量份和偶氮异丁腈0.1重量份通过常规方法进行共聚,得到重均分子量为约30万的丙烯酸类聚合物。然后,将该丙烯酸类聚合物100重量份、作为交联剂的多官能环氧化合物0.5重量份、作为光聚合性化合物的二季戊四醇一羟基五丙烯酸酯5重量份、作为光聚合引发剂的α-羟基环己基苯基酮1重量份混合,使这些在作为有机溶剂的甲苯中均匀溶解,得到浓度为30重量%的上述丙烯酸类粘合剂的溶液。
在此,对粘合膜C在23℃下的储藏弹性率进行测定。其结果为7×105Pa。另外,关于测定方法的详细内容,见后述。
接着,使用粘合膜C,与上述实施例1同样操作,制作本比较例的切割/芯片焊接膜。
(比较例4)
在由厚60μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚30μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜D。关于紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,将由甲基丙烯酸甲酯100重量份、丙烯酸5重量份构成的单体混合物,使用甲苯200重量份和偶氮异丁腈0.1重量份通过常规方法进行共聚,得到重均分子量为40万的丙烯酸类聚合物。然后,将该丙烯酸类聚合物100重量份、作为交联剂的多官能环氧化合物3重量份、作为光聚合性化合物的二季戊四醇一羟基五丙烯酸酯30重量份、作为光聚合引发剂的α-羟基环己基苯基酮3重量份混合,使这些在作为有机溶剂的甲醇中均匀溶解,得到浓度为30重量%的上述丙烯酸类粘合剂的溶液。
在此,对粘合膜D在23℃下的储藏弹性率进行测定。其结果为8×1010Pa。另外,关于测定方法的详细内容,见后述。
接着,使用粘合膜D,与上述实施例1同样操作,制作本比较例的切割/芯片焊接膜。
(实施例4)
在由厚60μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚10μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜a。关于粘合剂层的厚度的测定方法和紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,将丙烯酸丁酯70重量份、丙烯酸乙酯30重量份、丙烯酸5重量份在乙酸乙酯中通过常规方法进行共聚,得到重均分子量为80万的丙烯酸类聚合物。然后,在该丙烯酸类聚合物100重量份中混合作为交联剂的多官能环氧化合物0.5重量份、作为光聚合性化合物的二季戊四醇一羟基五丙烯酸酯20重量份、作为光聚合引发剂的α-羟基环己基苯基酮1重量份,使这些在作为有机溶剂的甲苯中均匀溶解,得到浓度为18重量%的丙烯酸类粘合剂的溶液。
在此,对粘合膜a在23℃下的储藏弹性率进行测定。其结果为8×106Pa。另外,关于测定方法的详细内容,见后述。
接着,进行芯片胶粘用胶粘剂层的制作。即,相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主要成分的丙烯酸酯类聚合物(根上工业株式会社制、パラクロンW-197CM)100重量份,将多官能异氰酸酯类交联剂3重量份、环氧树脂(日本环氧树脂株式会社制、エピコ—ト1004)23重量份、酚醛树脂(三井化学株式会社制、ミレツクスXLC-LL)6重量份溶解于甲乙酮中,进行调节使浓度为20重量%。
将该胶粘剂组合物的溶液涂布在由厚50μm的聚对苯二甲酸乙二醇酯膜形成的脱模处理膜上。然后,在120℃下干燥3分钟,形成厚20μm的芯片胶粘用胶粘剂层a。另外,作为脱模处理膜,采用对聚对苯二甲酸乙二醇酯膜进行硅酮脱模处理后的膜。
接着,将芯片胶粘用胶粘剂层a转印到上述由丙烯酸类粘合剂形成的粘合膜a上的粘合剂层侧,得到本实施例的切割/芯片焊接膜。
(实施例5)
在本实施例中,使用以丙烯酸丁酯为主要成分的聚合物(根上工业株式会社制、パラクロンSN-710)代替以丙烯酸乙酯-甲基丙烯酸甲酯为主要成分的丙烯酸酯类聚合物,且将粘合剂层的厚度变更为30μm,除此以外,均与上述实施例4同样操作,制作本实施例的切割/芯片焊接膜。
(实施例6)
在由厚80μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚70μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜b。关于紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,使由丙烯酸乙酯50重量份、丙烯酸丁酯50重量份、丙烯酸-2-羟乙酯16重量份构成的混合组合物在甲苯溶液中共聚,得到重均分子量为50万的丙烯酸类聚合物。
然后,使该丙烯酸类聚合物100重量份与20重量份的2-甲基丙烯酰氧乙基异氰酸酯进行加成反应,在聚合物分子内侧链中引入碳-碳双键。此时的侧链的长度以原子数计为13个。在该聚合物100重量份中进一步混合多官能异氰酸酯类交联剂1重量份、苯乙酮类光聚合引发剂3重量份,使这些在作为有机溶剂的甲苯中均匀溶解,得到浓度为27重量%的上述丙烯酸类粘合剂的溶液。
在此,对粘合膜b在23℃下的储藏弹性率进行测定。其结果为3×105Pa。另外,关于测定方法的详细内容,见后述。
接着,与上述实施例4同样操作,进行芯片胶粘用胶粘剂层a的制作。然后,将芯片胶粘用胶粘剂层a转印到上述由丙烯酸类粘合剂形成的粘合膜b上的粘合剂层侧,得到本实施例的切割/芯片焊接膜。
(比较例5)
除了使粘合剂层的厚度为100μm以外,与上述实施例4同样操作,制作本比较例的切割/芯片焊接膜。
(比较例6)
在由厚60μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚30μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜c。关于紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,将由丙烯酸丁酯100重量份、丙烯酸2重量份构成的单体混合物使用甲苯200重量份和偶氮异丁腈0.1重量份通过常规方法进行共聚,得到重均分子量为约30万的丙烯酸类聚合物。然后,将该丙烯酸类聚合物100重量份、作为交联剂的多官能环氧化合物0.5重量份、作为光聚合性化合物的二季戊四醇一羟基五丙烯酸酯5重量份、作为光聚合引发剂的α-羟基环己基苯基酮1重量份进行混合,使这些在作为有机溶剂的甲苯中均匀溶解,得到浓度为30重量%的上述丙烯酸类粘合剂的溶液。
在此,对粘合膜c在23℃下的储藏弹性率进行测定。其结果为3×103Pa。另外,关于测定方法的详细内容,见后述。
接着,使用粘合膜c,与上述实施例4同样操作,制作本比较例的切割/芯片焊接膜。
(比较例7)
在由厚60μm的聚乙烯膜形成的支撑基材上涂布可以进行紫外线固化的丙烯酸类粘合剂的溶液,并干燥,形成厚30μm的粘合剂层。然后,通过掩模仅对贴附晶片的部分照射500mJ/cm2的紫外线,得到由该支撑基材和贴附于晶片的部分进行紫外线固化而得到的粘合剂层构成的粘合膜d。关于紫外线的照射条件,见后述。
可以进行紫外线固化的丙烯酸类粘合剂的溶液的制备如下所述。即,将由甲基丙烯酸甲酯100重量份、丙烯酸5重量份构成的单体混合物使用甲苯200重量份和偶氮异丁腈0.1重量份通过常规方法进行共聚,得到重均分子量为约40万的丙烯酸类聚合物。然后,将该丙烯酸类聚合物100重量份、作为交联剂的多官能环氧化合物3重量份、作为光聚合性化合物的二季戊四醇一羟基五丙烯酸酯30重量份、作为光聚合引发剂的α-羟基环己基苯基酮3重量份进行混合,使这些在作为有机溶剂的甲醇中均匀溶解,得到浓度为27重量%的上述丙烯酸类粘合剂的溶液。
在此,对粘合膜d在23℃下的储藏弹性率进行测定。其结果为5×1010Pa。另外,关于测定方法的详细内容,见后述。
接着,使用粘合膜d,与上述实施例4同样操作,制作本比较例的切割/芯片焊接膜。
(切割和拾取)
使用实施例1~6和比较例1~7的各切割/芯片焊接膜,按以下的要领,实际进行半导体晶片的切割/芯片焊接,评价各切割/芯片焊接膜的性能。
将形成有电路图案的半导体晶片(直径8英寸、厚0.6mm)进行背面研磨处理,将厚0.15mm的镜面晶片作为工件使用。研磨装置中采用デイスコ公司制造的DFG-840(商品名)。将该镜面晶片在各切割/芯片焊接膜上于40℃下进行辊压接并使其贴合,再进行切割。贴合采用日东精机株式会社制造的晶片贴合装置(DR-8500)。另外,切割是全切成5mm见方的芯片尺寸。对于切割后的半导体晶片和切割/芯片焊接膜,考察有无丝状屑。关于丝状屑的观察方法和切割条件的详细内容,见后述。
接着,对实施例1~3和比较例1~4的各切割/芯片焊接膜,进行将它们拉伸而使各芯片间为规定间隔的扩展工序。另外,采用针的上推方式从各切割/芯片焊接膜的支撑基材侧拾取硅芯片,进行芯片分散和拾取性的评价。另外,对于拾取的芯片考察有无碎屑。测定条件见后述。
[粘合剂层的厚度的测定方法]
利用1/1000千分表进行粘合剂层的厚度测定。
[紫外线照射条件]
紫外线(UV)照射装置:NEL M-110(商品名、日东精机株式会社制)
紫外线照射累计光量:500mJ/cm2
[储藏弹性率的测定方法]
使用Rheometric公司制造的粘弹性分光计(商品名:RSA-II)测定储藏弹性率。测定条件为频率1Hz、样品厚度2mm、压接加重100g、以升温速度5℃/分钟在-50℃~200℃的范围中得到23℃下的测定值。
[切割条件]
切割装置:DFD-651(商品名、デイスコ公司制)
切割速度:80mm/秒
切割刀片:2050HECC(商品名、デイスコ公司制)
转速:40000rpm
对切割/芯片焊接膜的切深:15μm(参照图6)
切割方式:全切/A模式
芯片尺寸:5mm见方
[丝状屑的观察方法]
通过光学显微镜(50倍)观察包括切割后的半导体晶片的中心线在内的左右3条线(共计7条线),计数长度为10μm以上的丝状屑的个数(参照图4)。丝状屑的观察,是对半导体芯片的表面及侧面和切割/芯片焊接膜的切割后的线附近的表面进行的。
[扩展条件]
切割环:2-8-1(商品名、デイスコ公司制、内径19.5cm)
拉下量:5mm
芯片焊接机:SPA-300(商品名、株式会社新川制)
[碎屑评价方法]
切割后,拾取(剥离)任意的半导体芯片(被切割体)50个,观察半导体芯片侧面的碎屑。将三角形状的芯片碎片作为碎屑来进行观察,计数20μm以上大小的碎屑。
[拾取性评价]
确认在将切割后的5mm×5mm见方的半导体芯片进行拾取时在半导体芯片背面有无粘附粘合剂。另外,拾取时,将在80W/cm2的高压汞灯下放置10秒后的粘合剂层进行放射线固化后,进行拾取。其结果是,将可以无破裂和缺损地进行芯片拾取的情况评价为○,将产生破裂、缺损或拾取错误的情况评价为×。
(结果)
由下述表1和表2可知,在实施例1~6中,完全未观察到丝状屑,而在比较例2中,在任一处均观察到大量丝状屑。
关于碎屑,在实施例3和4中产生一些碎屑,但仍为芯片在性能上可以使用的状态。在实施例1、2、4和5中完全没有产生碎屑,结果良好。另一方面,在比较例1、3、4、5和6中观察到碎屑的产生,处于芯片在性能上无法使用的状态。另外,关于芯片分散,在各实施例中均未发生,确认具有用于固定半导体芯片的充分的粘合力。另一方面,在比较例4中观察到大量的芯片分散,确认粘合剂层的粘合力不足。另外,比较例7的切割/芯片焊接膜由于无法进行切割环的贴附,因此无法进行切割。
由这些试验结果可知:粘合剂层薄时,通过切割刀片切断支撑基材而容易产生丝状屑。另一方面,过厚时,确认到产生碎屑,半导体芯片的品质明显下降。
表1
实施例1 | 实施例2 | 实施例3 | 比较例1 | 比较例2 | 比较例3 | 比较例4 | |
粘合剂层的厚度(μm) | 20 | 30 | 70 | 100 | 3 | 30 | 30 |
储藏弹性率(Pa) | 3×108 | 3×108 | 4×107 | 3×108 | 3×108 | 7×105 | 8×1010 |
芯片胶粘用胶粘剂层的厚度(μm) | 20 | 20 | 10 | 20 | 20 | 20 | 20 |
芯片表面的丝状屑数(个) | 0 | 0 | 0 | 0 | 30 | 0 | 0 |
芯片侧面的丝状屑数(个) | 0 | 0 | 0 | 0 | 17 | 0 | 0 |
切割/芯片焊接膜表面的丝状屑数(个) | 0 | 0 | 0 | 0 | 120 | 0 | 0 |
最大芯片缺损的个数(个/50个) | 0 | 0 | 2 | 35 | 0 | 48 | 26 |
芯片分散的产生(个/50个) | 0 | 0 | 0 | 0 | 0 | 0 | 36 |
拾取性(-) | ○ | ○ | ○ | ○ | ○ | × | ○ |
表2
Claims (15)
1.一种切割/芯片焊接膜,其在支撑基材上依次层压有粘合剂层和芯片胶粘用胶粘剂层,其特征在于,所述粘合剂层的厚度为10~80μm,23℃下的储藏弹性率为1×104~1×1010Pa。
2.如权利要求1所述的切割/芯片焊接膜,其特征在于,所述粘合剂层是放射线固化型粘合剂层。
3.如权利要求1所述的切割/芯片焊接膜,其特征在于,至少在与所述芯片胶粘用胶粘剂层上的工件贴附部分对应的部分上满足所述粘合剂层中的储藏弹性率的数值范围。
4.如权利要求3所述的切割/芯片焊接膜,其特征在于,所述粘合剂层与芯片胶粘用胶粘剂层的界面中,与所述工件贴附部分对应的界面上的剥离性大于与其以外部分的一部分或全部对应的界面上的剥离性。
5.如权利要求3所述的切割/芯片焊接膜,其特征在于,所述粘合剂层对于芯片胶粘用胶粘剂层的粘合力中,与所述工件贴附部分对应的部分的粘合力小于与其以外部分的一部分或全部对应的部分的粘合力。
6.如权利要求3或4所述的切割/芯片焊接膜,其特征在于,所述芯片胶粘用胶粘剂层的粘合力中,在所述工件贴附部分中对于工件的粘合力大于在与所述工件贴附部分对应的部分中对于粘合剂层的粘合力。
7.如权利要求2~5中任一项所述的切割/芯片焊接膜,其特征在于,所述工件贴附部分以外的部分的一部分为切割环贴附部分。
8.如权利要求6所述的切割/芯片焊接膜,其特征在于,所述芯片胶粘用胶粘剂层的粘合力中,在所述切割环贴附部分中对于切割环的粘合力小于在与所述切割环贴附部分对应的部分中对于粘合剂层的粘合力。
9.如权利要求1或2所述的切割/芯片焊接膜,其特征在于,所述芯片胶粘用胶粘剂层作为工件贴附部分设置于所述粘合剂层上的一部分,所述粘合剂层中的与工件贴附部分对应的部分的粘合力小于其以外部分的粘合力。
10.如权利要求9所述的切割/芯片焊接膜,其特征在于,所述芯片胶粘用胶粘剂层的粘合力中,在所述工件贴附部分中对于工件的粘合力大于在与所述工件贴附部分对应的部分中对于粘合剂层的粘合力。
11.如权利要求2~9中任一项所述的切割/芯片焊接膜,其特征在于,所述粘合剂层由放射线固化型粘合剂形成,与所述工件贴附部分对应的部分为通过放射线照射而固化的状态。
12.一种碎片工件的固定方法,其是使用权利要求1~11中任一项所述的切割/芯片焊接膜的碎片工件的固定方法,其特征在于,具有:
在所述芯片胶粘用胶粘剂层的工件贴附部分上压接工件的工序;
将所述工件与所述芯片胶粘用胶粘剂层一起切割成碎片状、并在所述粘合剂层停止切割的工序;
将所述碎片工件与所述芯片胶粘用胶粘剂层的工件贴附部分一起从所述粘合剂层上剥离的工序;以及
通过所述芯片胶粘用胶粘剂层的工件贴附部分将碎片工件胶粘固定于半导体元件的工序。
13.一种半导体装置,其特征在于,其采用权利要求12所述的碎片工件的固定方法,通过所述芯片胶粘用胶粘剂层的工件贴附部分将碎片工件胶粘固定于半导体元件而成。
14.一种半导体装置的制造方法,其是使用权利要求1~11中任一项所述的切割/芯片焊接膜的半导体装置的制造方法,其特征在于,具有:
在所述芯片胶粘用胶粘剂层的工件贴附部分上压接工件的工序;
将所述工件与所述芯片胶粘用胶粘剂层一起切割成碎片状、并在所述粘合剂层停止切割的工序;
将所述碎片工件与所述芯片胶粘用胶粘剂层中的胶粘剂一起从所述粘合剂层上剥离的工序;以及
通过所述胶粘剂将所述碎片工件胶粘固定于半导体元件的工序。
15.一种半导体装置,其特征在于,其采用权利要求14所述的半导体装置的制造方法,通过所述芯片胶粘用胶粘剂层中的胶粘剂将碎片工件胶粘固定于半导体元件而成。
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-
2006
- 2006-09-12 US US12/440,495 patent/US20100019365A1/en not_active Abandoned
- 2006-09-12 KR KR1020097006766A patent/KR100943799B1/ko active IP Right Grant
- 2006-09-12 EP EP06797847A patent/EP2063460A4/en not_active Withdrawn
- 2006-09-12 WO PCT/JP2006/318055 patent/WO2008032367A1/ja active Application Filing
- 2006-09-12 CN CN2006800556162A patent/CN101506948B/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102250555A (zh) * | 2010-05-17 | 2011-11-23 | 古河电气工业株式会社 | 晶片加工用带 |
TWI471401B (zh) * | 2011-09-30 | 2015-02-01 | Lintec Corp | And a method for manufacturing a dicing film and a wafer having a protective film forming layer |
CN105264033A (zh) * | 2014-01-03 | 2016-01-20 | 株式会社Lg化学 | 切割膜和切割晶片粘合膜 |
US9761476B2 (en) | 2014-01-03 | 2017-09-12 | Lg Chem, Ltd. | Dicing film and dicing die-bonding film |
CN105264033B (zh) * | 2014-01-03 | 2018-05-18 | 株式会社Lg化学 | 切割膜和切割晶片粘合膜 |
Also Published As
Publication number | Publication date |
---|---|
CN101506948B (zh) | 2012-12-12 |
US20100019365A1 (en) | 2010-01-28 |
KR20090064558A (ko) | 2009-06-19 |
EP2063460A1 (en) | 2009-05-27 |
WO2008032367A1 (fr) | 2008-03-20 |
EP2063460A4 (en) | 2011-08-03 |
KR100943799B1 (ko) | 2010-02-23 |
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