CN101454910A - 含三维支架的用于物理空间照明的半导体光源 - Google Patents

含三维支架的用于物理空间照明的半导体光源 Download PDF

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CN101454910A
CN101454910A CNA2007800196354A CN200780019635A CN101454910A CN 101454910 A CN101454910 A CN 101454910A CN A2007800196354 A CNA2007800196354 A CN A2007800196354A CN 200780019635 A CN200780019635 A CN 200780019635A CN 101454910 A CN101454910 A CN 101454910A
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CN101454910B (zh
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曹殿生
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Epistar Corp
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Abstract

本发明涉及用于物理空间照明的半导体光源,包括具有多个平面的支架,每一个平面上设置有一个或更多半导体发光设备,如发光二极管LED。将光源进行配置以适应传统灯座和其它光源诸如条形灯和平面安装灯的几何结构。

Description

含三维支架的用于物理空间照明的半导体光源
对相关申请的交叉引用
本申请是对先前美国发明专利(申请序列号为11/397,323,申请日为2006年4月4日)做出部分延续后的申请。该专利申请(申请系列号为11/397,323)是对先前美国实用新型专利(申请系列号为10/773,123,申请日为2004年2月5日)做出部分延续后的申请。该美国发明专利(申请系列号为10/773,123)是先前美国发明专利(申请系列号为09/938,875,申请日为2001年8月24日,现美国专利号为6,746,885)的延续。上述各项专利申请通过引用的方式而整合在一起。
技术领域
当前发明涉及电力照明和发光技术领域,具体涉及使用安装在内置三维支架上的发光二极管(LEDs)提供照明的光源技术领域。
背景技术
本申请所披露的技术适用于各种用于物理空间照明的光源装置,例如灯泡等。该技术具体处理利用发光二极管(LED)照明难以提供足够光线来照明物理空间的技术障碍。以往,由于无法输出足够的光线,对LED的利用常常局限于强调性照明的场合。有几种方法可提高发光二极管的光线输出能力。一种方法是通过增加芯片的尺寸,另一种方法是增加光源中的芯片数量。
通过增加芯片尺寸的方法又会引发几个问题。首先,增加芯片尺寸要求生产流程更加精确,结果会导致成本上升。其次,由于发热的原因,芯片的发光效率会下降。当LED芯片的尺寸增加后,其释放的热量也会成比例的增加。大量的热量难以从芯片中排放出去,结果导致芯片的整体温度上升,发光效率下降。
现有技术中,将多个LED芯片整合在二维平台上以提高功率。这种在二维排列上整合多芯片的方法同时还有下列缺陷:占用空间大,制造流程复杂。
本申请所披露的内容涉及利用三维多面支架建立紧凑高效的LED光源的结构及流程。
发明内容
利用三维多平面支架产生紧凑高效的光源。为了达到该目的和其他方面的目标,本发明包括:配有轴的三维支架,电路连接构件,例如标准螺线钉或者电路板连接结构。借助螺线结构,该光源可以拧入传统灯座,从而可以取代现有的白炽灯泡。支架上设有多个平面,支架本身又作为安装于其上的发光二极管的阴极。阳极帽盖配有延伸导针,并通过绝缘层与阴极隔离。在支架的多个平面中选择部分平面,在其上安装一个或多个LED,以产生弧度范围可达360度的发光弧。用导线将芯片的阳极连接到支架的阳极,另用导线将芯片的阴极连接到支架的主体。多个芯片可以排列或者模组合件的形式进行排列,每个芯片都与基座部分相连,基座部分再依次与支架相连(在本部分及后续权利要求部分,所用词语“排列”包含排列和组合件)。支架和芯片用封装构件覆盖,封装构件由环氧树脂、硅、塑料或者类似材料制成,该封装构件本身可对芯片所发射的光线起光学透镜作用。该封装构件也可对芯片和支架起保护层的作用,并能有效的对光源起防水作用。光源的整体设计达到以下特征:发光弧的发射弧度可达到360度(含360度),光源易于更换并完全密封防水。
值得注意的是,申请人确认各种应用形式,从技术上讲在体积方面都是三维的;应当认为,这也包括了在多个平板上将LEDs作二维排列的情形。然而,就本申请的目的而言,三维支架可以解释为指:除安装阳极的平面外,在实施本发明时,支架上其他各个平面均可用于安装LED,从而提供具有使用功能的三维表面体。该三维表面体的形状包括任何圆柱型(圆形或者多边型)、半球形状、球状,或者圆顶型。尽管从技术上而言,平板也属于三维性质,但由于平板只能为发光二极管提供二维的安装平面,所以本发明不包括平板形状(即使平板的两面都加以利用的话,也只是平行的两个平面)。
下文及后续权利要求部分将详细展示本发明的各项特征及其优点。这些特征和优点可以通过后续权利要求所示的装置及其组合得以实现。而且,通过实施本发明的方式可以理解到本发明的特征和优点,并且下文所作描述也可使这些特征和优点显而易见。
很多发明的目的会出现在以下的描述和所附的权利要求、形成说明书一部分的附图参考说明中,在说明书中指定的部分和参考部分在一些观点上相互一致。
在详细解释本发明之前,应该理解本发明并不局限于申请中所述的或者附图中描述的结构和部件的组成细节。发明可以被表现为多种外在形式,也可以被实践和使用于多种方式。本文中的措词和技术是以描述本发明为目的,不应局限于此。
本发明的内容是以技术人员尊重技术概念为基础,这些技术可以被整合为设计其他结构的基础,这些技术的方法和系统可以用于实现本发明的几个目的。因此,重要的是权利要求应被看作包括这种等同的构造的范围,只要不偏离本发明的精神和范围。
附图说明
图1为使用三维多面支架进行物理空间照明的光源的透视图;
图2为图1所示装置的截面图;
图3为对不同形状支架的几个例示图;
图4为使用三维多面支架光源的一种替代方案的透视图;
图5为图4所示装置的截面图;
图6为使用三维多面支架光源的另一种替代方案的透视图;
图7为使用三维多面支架光源的又一种替代方案的透视图;
图8为图7所示装置的截面图。
具体实施方式
下面参考附图描述本发明器具的优选实施方案。有必要强调一下,除非具体情形明显有不同要求,在本部分所作具体描述中,所使用的限定词“一”或“该”包括所指示对象的复数。在本部分所作描述中所引用的各种材料仅仅是例示性质,在实施本发明时,就已有技术而言,该等材料均有类似功能的可替代品。因此,下面所作描述内容应当被看作例示性解释而不应当作为限定性质。
图1展示了带有三维多平面支架的光源100,该多平面可用于安置多个发光二极管芯片。三维支架101配有轴102及标准螺旋线103。借助螺线结构,该光源可以拧入传统灯座,从而可以取代现有的白炽灯泡。支架101上配有多个平面104。支架101自身作为发光二极管100的阴极。阳极帽盖105配有延伸导针106。阳极和阴极之间由绝缘层107隔离。发光二极管芯片108安装于支架101的各个平面上。每个平面可以使用一个或多个芯片。导线109将芯片的阳极108连接到支架的阳极105,另用导线将芯片的阴极连接到支架的主体。支架装上芯片后,再用环氧树脂盖120加以覆盖。环氧树脂盖120既可以对芯片中散发的光线起光学透镜的作用,同时也可以对芯片和支架起保护层的作用。整个设计可以实现光源的下列功能特征:在不超过360度(含360度)的弧度范围内散发光线;光源便于更换;光源被完全密封并可防水。
图2展示了图1所示光源的截面200。支架201以截面图形式显示。基座202为发光二极管的阴极,阴极轴203与螺线装置204相连。在本实施例中,阴极平面部分205几乎与基座202相垂直。基于设计要求,该平面与基座可以相垂直也可以不相垂直。支架的阳极盖206配有一根延伸出支架阴极之外的导针207。阳极和阴极通过绝缘层208隔离。该绝缘层的材料可以是环氧树脂、氧化铝、或其他具有绝缘功能的各种材料。绝缘层可以阻断阳极和阴极之间的电流。各芯片如芯片209,固定于支架的各平面。芯片209通过导线210a与阳极206相连,并通过金或铝制的导线210b与阴极201相连。光线转换层211涂覆在芯片209上面,可用于将芯片所发光线按要求转换成不同的颜色,当无需转换光线颜色时,该转换层也可不安装。支架、阳极和阴极被环氧树脂盖212覆盖。环氧树脂盖212既起光学透镜的作用,也起支架和芯片的保护层的作用。尽管各个附图均未加以描绘,但应当理解为:发光二极管芯片和支架之间的连接可以是串联或并联方式的电路连接;发光二级管芯片的安装方式可以以图示的排列结构安装,也可以是将芯片预先制成组合件后再将该组合件与支架的阴极和阳极相连。所以这些变换形式均属于对本发明的具体实施方案。
图3a-3f为支架外形的实施例。支架的主要形状取决于阴极的形状,阳极与阴极形状相同,阴极和阳极均可以根据具体需要采用各种形状。
图4展示了具有表面型包装400的多平面光源。所配底座401起传热器的功能,可以是电绝缘材料制成,如陶瓷、塑料等。在基座401上,电极402和403位于基座401的一侧,电极404和405位于该基座的另一侧。阳极402和404与阴极403和405形成电流环路。各电极可利用在陶瓷基上镀上诸如铝、金或其他合金的金属层的方法制成。支架406的阴极407位于基座401的顶部并于基座401相连。竖直多平面408与基座407相连。阳极盖409经绝缘层410相隔后安装在阴极支架的上面。如图所示,芯片排列411安装在其中一个平面上。芯片排列411通过导线412和413与阴极和阳极相连。环氧树脂层414覆盖于支架和各芯片之上,既起保护盖也起光学透镜的作用。应当指出,“平面安装”指将光源安装于平面的各种构造。平面安装构造有多种形式,包括但不限于:将光源安装于印刷电路板上或电力仪表盘上。所有将光源安装于平面的构造均属于“平面安装”的范围。同时有必要指出,在本例示性具体实施方案中,使用了一个芯片排列411。应当理解为对多个芯片和排列的单独使用。
图5展示了光源500的截面图,该光源500如图4中所示光源。支架阴极501配有基座502。帽盖504配有阳极导针505。在阴极和阳极之间设有绝缘层506。LED芯片排列507安装于支架平面之一上面,如平面503。可选择的含磷镀层508可用于光线颜色的转换。导线509和510将芯片与阳极和阴极相连。环氧树脂盖511覆盖整个支架。发光二级管的基座形状如基座512所示。用于基座512的材料具有导热和电绝缘的功能。使用金属镀层电极513和514分别作为阴极和阳极。支架的阴极503通过线路515与基座上的阴极513相连,支架的阳极505通过线路516与基座上的阳极514相连。
图6展示了光线仅向同一个方向发射的另一种包装方式,即发光弧的度数小于360度的情形。注意,此种情形下,支架上的平面数较少。发光二极管600配有基座601及各个电极602、603、604和605。支架606具有仅在一个方向的多平面,且在这些平面上安装有芯片。在本构造中,仅有一个平面指向非照射方向,该平面不作使用。然而,取决于支架的具体形状,可以选择数量不等的平面在其上不安装芯片,以便使发光弧的度数小于360度。环氧树脂盖607用于保护支架及LED芯片。光线将向同一方向发射。此类光线可用于各种需使用背景灯光的场合。
图7展示了用两个多平面支架相连,以形成柱形或条形光源的情形。光源700有2个阴极支架701和702。阳极703与阴极701并排放置,中间用绝缘层704隔开。芯片705安装在一个平面上,通过导线与阳极和阴极相连。另一个阳极706夹于绝缘层708和709之间,并安装于支架701和702之间。LED芯片709位于702的一个平面之上。环氧树脂盖711做成覆盖整个支架及各构件的形状。电极712和713分别作为阳极和阴极。
图8展示了图7所示发光二极管的截面图。这一角度展示了阳极和阴极之间的排列。在阳极中有接触片801。通过杆804将平台802和803相连。在平台802和803上分别有两个压合平面805和806。两阴极807和808通过连接杆809与多平面相连。绝缘层810和811用于填充阳极和阴极之间的空隙。用于阴极的接触片为812。芯片813安装于支架的一个平面上。可选择的含磷镀层814可用于波长转换。导线815和816将芯片与阳极和阴极相连。应当指出,通过将三个、四个、五个或更多个支架通过前述结构和组装方式整合在一起,可以制成更长的条形光源。同样,多个支架可以采用前述单方向。
通过将一个或多个芯片安装于多平面支架的各个平面上的光源,可以用于将多个芯片整合成占用空间小的封装件。取决于具体需求,支架上的平面数量可以从1个到无数多个。支架的三维结构可以按具体需要调整多平面的方向。通过绝缘材料将支架上的阴极和阳极隔离。每个平面上可以安装一个或多个芯片。通过覆盖在芯片上的光线转换层将芯片所发光线转换成不同颜色。由环氧树脂或类似材料制成的盖,在覆盖支架后,既可以作保护层又可作光学透镜。支架既可采用带有螺旋底线的二极管的方式,也可采用带有电极基底的平面安装的方式。多平面支架可以通过一个单元或多单元组合的方式来形成条形光源。通过在蓝光芯片的上面应用磷质涂层,可实现多平面支架作为白光源使用。支架由导热材料制成,有利于散发芯片热量,避免热效应引起的流明损耗。
尽管通过一定数量的具体实施方案和应用对本发明进行了描述和例示,但在本发明所例示、描述和权利要求保护的原理范围内,熟悉本发明所涉技术领域的人员可能会做出各种变动或修改。在本发明实质内容和基本特征的范围内,本发明可能会作其他形式的使用或实施。无论如何,所描述的本发明具体实施的各情形仅仅是为例示的方便,不应当看成是对本发明内容的任何限制性描述。在本发明权利保护范围内或等价范围内所作修改均属于本发明权利保护的范畴。申请人在此对本发明的各种具体应用所作披露,既不代表申请人对本发明的内容及权利要求作限定性质的意思表示,也不应当从该等披露中推断出该意思表示。
工业应用
本发明通过利用固体技术和改进的几何设计,达到了提供紧凑和高效的光源的功能。除多平面支架用于支持发光二极管这一技术外,本发明所使用的其他制造科技与现今用于制造类似光源的科技内容类似。因此,与以前技术装置相比,本发明可以在更小的空间安装更多的发光二极管,从而增加照明亮度。

Claims (25)

1、用于物理空间照明的半导体光源,其特征在于,该半导体光源包括:
a.三维支架,所述三维支架包括:至少两个电极;一个阳极和一个阴极,该支架还进一步包括导电和导热的第一电极,所述第一电极中心贯穿有垂直钻孔,
b.所述第一电极设置有多个平面,所述平面以不同的方向进行设置并在其上装配有发光半导体芯片,
c.直径尺寸小于钻孔直径的第二电极导电体,同轴置于钻孔内部,并延伸至少至第一电极的底部,所述第二电极的顶端具有直径大于钻孔直径的帽盖,这样限定了导针和主体之间的空间,
d.置于第一电极和第二电极之间并使其彼此电绝缘的绝缘层,其中一个电极作为阳极而另一电极作为阴极,
e.安装在所述平面上的多个发光半导体芯片,每个芯片均与阴极和阳极相连接。
2、如权利要求所述的半导体光源,其特征在于,所述第一电极的底部刻有螺旋线以形成与窝状构件接触的接触面。
3、如权利要求所述的半导体光源,其特征在于,所述导针延伸超过所述第一电极的底部。
4、如权利要求3所述的半导体光源,其特征在于,进一步包括用于安装支架的平面基座。
5、如权利要求4所述的半导体光源,其特征在于,进一步包括设置在所述平面基座上的多个电极,使得所述阳极和所述阴极进行电连接。
6、如权利要求1所述的半导体光源,其特征在于,进一步包括用于覆盖所述支架和芯片的封装构件。
7、如权利要求6所述的半导体光源,其特征在于,所述封装构件对所述芯片发出的光线起光学透镜的作用。
8、如权利要求6所述的半导体光源,其特征在于,所述封装构件的材料构成中至少包含下列材料的一种:硅、环氧树脂和塑料。
9、如权利要求8所述的半导体光源,其特征在于,所述封装构件对所述芯片发出的光线起光学透镜的作用。
10、如权利要求1所述的半导体光源,其特征在于,进一步包括用于将芯片发射出的光转换为白光的光线转换层。
11、如权利要求10所述的半导体光源,其特征在于,所述光线转换层为磷光体层。
12、如权利要求1所述的半导体光源,其特征在于,所述支架至少有一个发光半导体芯片安装在至少一个平面上。
13、如权利要求1所述的半导体光源,其特征在于,与支架连接的一排半导体芯片中排列有至少两个半导体芯片。
14、如权利要求1所述的半导体光源,其特征在于,所述光源发射出光线弧度达到360度的光线。
15、如权利要求1所述的半导体光源,其特征在于,所述光源发射出光线弧度小于360度的光线。
16、如权利要求15所述的半导体光源,其特征在于,对所述光线弧度进行限定以使光源朝一个方向发射光线。
17、如权利要求1所述的半导体光源,其特征在于,进一步包括连接电源的构件。
18、如权利要求17所述的半导体光源,其特征在于,连接电源的构件为具有与灯座机械连接的基座。
19、如权利要求16所述的半导体光源,其特征在于,连接电源的构件为将灯装配到表面的构件。
20、用于物理空间照明的半导体光源,其特征在于,该半导体光源包括支架,所述支架具有至少两个电极、一个阴极和一个阳极,所述支架进一步包括:
a.由导热材料制成的圆柱电极,其最靠近支架的一端具有电连接装置;
b.第二电极,插入所述圆柱电极内,并保持该两个电极互不连接,所述第二电极具有帽盖,所述帽盖直径尺寸使第二电极不完全插入所述圆柱电极且该帽盖阻止第二电极与圆柱电极的电连接,所述第二电极具有突出部分穿过圆柱电极的壁,同时保持第二电极与圆柱电极互不连接,
c.位于各圆柱电极之间以将其彼此隔离的电隔离装置,
d.设置在所述圆柱电极上的多个平面,所述平面被配置以在其上装配发光半导体芯片,以及
e.装配在所述支架平面上并与电极相连的多个发光半导体芯片。
21、如权利要求20所述的半导体光源,其特征在于,所述多个支架制成彼此相连的形状以形成条形灯。
22、如权利要求21所述的半导体光源,其特征在于,进一步包括在设置在所述条形灯上的封装构件。
23、如权利要求20所述的半导体光源,其特征在于,进一步包含至少另外一个连接到该装置的具有多个平面的支架,且至少有一个发光二级管芯片在至少一个平面上。
24、如权利要求20所述的半导体光源,其特征在于,固定在所述支架上的一排半导体芯片中至少排列有两个半导体芯片。
25、如权利要求1所述的半导体光源,其特征在于,所述支架至少有一个发光半导体芯片安装在至少一个平面上。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101813267A (zh) * 2009-12-23 2010-08-25 北京巨数数字技术开发有限公司 一种led路灯和led路灯显示系统
CN101839410A (zh) * 2010-04-15 2010-09-22 北京朗波尔光电股份有限公司 空间全方位发光led
WO2011035490A1 (zh) * 2009-09-27 2011-03-31 东莞市莱硕光电科技有限公司 用于三维照明的led器件
CN102096275A (zh) * 2010-12-21 2011-06-15 周志坚 一种多面体红外、紫外发射led夜视摄像头
WO2011109948A1 (zh) * 2010-03-12 2011-09-15 浙江金谷包装印刷有限公司 一种功率型发光二极管
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TWI422776B (zh) * 2010-12-15 2014-01-11 Cal Comp Electronics & Comm Co 發光裝置
CN103855141A (zh) * 2012-11-29 2014-06-11 光宝光电(常州)有限公司 发光二极管元件、发光二极管模块及发光二极管元件的制作方法
CN110931621A (zh) * 2019-12-06 2020-03-27 马鞍山三投光电科技有限公司 一种用于交通信号灯上的发光二极管

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200134B1 (en) 1998-01-20 2001-03-13 Kerr Corporation Apparatus and method for curing materials with radiation
US7728345B2 (en) 2001-08-24 2010-06-01 Cao Group, Inc. Semiconductor light source for illuminating a physical space including a 3-dimensional lead frame
US7182597B2 (en) 2002-08-08 2007-02-27 Kerr Corporation Curing light instrument
US8113830B2 (en) 2005-05-27 2012-02-14 Kerr Corporation Curing light instrument
EP1977456A4 (en) * 2005-12-29 2014-03-05 Lam Chiang Lim HIGH POWER LIGHT EMITTING DIODE HOUSING FIXED REMOVABLE TO A HEAT SINK
KR100799864B1 (ko) * 2006-04-21 2008-01-31 삼성전기주식회사 Led 패키지
US7600890B2 (en) * 2006-09-12 2009-10-13 Osram Sylvania Inc. Illuminated sign and light source for use with said sign
TWM310457U (en) * 2006-10-25 2007-04-21 Polytronics Technology Corp Light emitting diode module and apparatus thereof
DE102006061020B3 (de) * 2006-12-22 2008-05-21 KÜGLER, Christoph LED-Leuchtmittel mit omnidirektionaler Lichtabstrahlung und optimierter Wärmeableitung
TWM320034U (en) * 2007-05-04 2007-10-01 Polytronics Technology Corp LED apparatus
EP2077414A1 (en) * 2008-01-04 2009-07-08 Albert Stekelenburg LED bulb with an enlarged irradiation range by arranging LED elements in three-dimension
DE102008019612A1 (de) * 2008-04-18 2009-10-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
GB2462815A (en) * 2008-08-18 2010-02-24 Sensitive Electronic Co Ltd Light emitting diode lamp
US8143769B2 (en) * 2008-09-08 2012-03-27 Intematix Corporation Light emitting diode (LED) lighting device
CN201319376Y (zh) * 2008-12-12 2009-09-30 鑫谷光电股份有限公司 一种功率型发光二极管
JP5266075B2 (ja) * 2009-01-26 2013-08-21 パナソニック株式会社 電球形照明装置
KR20110117090A (ko) * 2009-02-17 2011-10-26 카오 그룹, 인코포레이티드 공간 조명을 위한 led 광 전구
KR101072143B1 (ko) * 2009-02-20 2011-10-10 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
WO2010103450A1 (en) * 2009-03-12 2010-09-16 Koninklijke Philips Electronics N.V. Light emitting device and luminaire
US9066777B2 (en) 2009-04-02 2015-06-30 Kerr Corporation Curing light device
US9072572B2 (en) 2009-04-02 2015-07-07 Kerr Corporation Dental light device
US20110110071A1 (en) * 2009-09-03 2011-05-12 The Brinkman Corporation Radial light-emitting diode lamp in flat printed circuit board form factor
CN101691912A (zh) * 2009-09-14 2010-04-07 重庆耀辉电工电器有限责任公司 一种立体发光的led光源以及封装方法
US20110073886A1 (en) * 2009-09-28 2011-03-31 Han-Ming Lee LED multi-side light source bracket
CN101832482A (zh) * 2009-12-16 2010-09-15 张旭 大角度led光源和大角度高散热led照明灯
KR101039881B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광소자 및 그를 이용한 라이트 유닛
JP5327096B2 (ja) * 2010-02-23 2013-10-30 東芝ライテック株式会社 口金付ランプおよび照明器具
JP5719614B2 (ja) * 2010-03-08 2015-05-20 ローム株式会社 Led照明装置
JP2011228300A (ja) * 2010-04-21 2011-11-10 Chang Wook 大角度led光源及び大角度高放熱性led照明灯
KR101073927B1 (ko) * 2010-06-23 2011-10-17 엘지전자 주식회사 조명장치
CN101943340A (zh) * 2010-08-01 2011-01-12 苏州佳世达电通有限公司 照明装置
TWI469404B (zh) * 2010-11-17 2015-01-11 Advanced Optoelectronic Tech 發光二極體模組
JP5281665B2 (ja) * 2011-02-28 2013-09-04 株式会社東芝 照明装置
US20120224371A1 (en) * 2011-03-02 2012-09-06 Kinpo Electronics, Inc. Lighting apparatus
US8888331B2 (en) 2011-05-09 2014-11-18 Microsoft Corporation Low inductance light source module
CN103814450B (zh) * 2011-09-20 2015-08-05 西铁城控股株式会社 Led模块以及使用它的led灯
US8992051B2 (en) 2011-10-06 2015-03-31 Intematix Corporation Solid-state lamps with improved radial emission and thermal performance
US20130088848A1 (en) 2011-10-06 2013-04-11 Intematix Corporation Solid-state lamps with improved radial emission and thermal performance
KR20130058350A (ko) * 2011-11-25 2013-06-04 삼성전자주식회사 자동차 램프용 발광소자 모듈
JP5919387B2 (ja) * 2012-10-19 2016-05-18 シャープ株式会社 発光装置および発光装置のヒートシンクへの取付構造
US8882310B2 (en) 2012-12-10 2014-11-11 Microsoft Corporation Laser die light source module with low inductance
TWI626395B (zh) 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
WO2014209055A1 (ko) * 2013-06-28 2014-12-31 서울반도체 주식회사 조명 장치
CN105339723A (zh) * 2013-06-28 2016-02-17 首尔半导体株式会社 照明装置
EP3014657B1 (en) * 2013-06-28 2018-04-25 Lumileds Holding B.V. Led dies bonded to lead frame strips
TWM473612U (zh) * 2013-10-25 2014-03-01 Unity Opto Technology Co Ltd 發光二極體支架及其泡燈
EP3062742B1 (en) 2013-11-01 2021-12-01 Lensgen, Inc. Two-part accommodating intraocular lens device
CN103791439B (zh) * 2014-01-27 2015-05-06 上海三思电子工程有限公司 新型led照明装置
TW201600790A (zh) * 2014-06-27 2016-01-01 Formosa Optronics Co Ltd 全周光球泡型燈具
JP6839701B2 (ja) * 2015-09-04 2021-03-10 シグニファイ ホールディング ビー ヴィSignify Holding B.V. 可撓性回路ストリップを支持体に巻き付けた照明装置
RU187099U1 (ru) * 2018-11-06 2019-02-19 Акционерное общество "Научно-исследовательский институт телевидения" Широкоугольный светодиодный светильник
CN111370554A (zh) * 2020-04-03 2020-07-03 唐丙旭 一种发光二极管及其制造方法
EP4295405A1 (en) * 2021-02-16 2023-12-27 Lumileds LLC Method for manufacturing light emitting elements, light emitting element, lighting device and automotive headlamp
US20240130022A1 (en) * 2021-09-29 2024-04-18 Jiaxing Super Lighting Electric Appliance Co., Ltd Led filament and light bulb using led filament

Family Cites Families (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1151377A (en) 1915-03-24 1915-08-24 Arthur Douglas Nash Light unit.
US3581162A (en) * 1969-07-01 1971-05-25 Rca Corp Optical semiconductor device
JPS54102886A (en) * 1978-01-31 1979-08-13 Futaba Denshi Kogyo Kk Light emitting diode indicator
US4240090A (en) * 1978-06-14 1980-12-16 Rca Corporation Electroluminescent semiconductor device with fiber-optic face plate
US4394679A (en) * 1980-09-15 1983-07-19 Rca Corporation Light emitting device with a continuous layer of copper covering the entire header
US4675575A (en) * 1984-07-13 1987-06-23 E & G Enterprises Light-emitting diode assemblies and systems therefore
JPS6132483A (ja) * 1984-07-24 1986-02-15 Kimura Denki Kk Ledを用いた球状発光体
JPH0416447Y2 (zh) * 1985-07-22 1992-04-13
US4674011A (en) * 1986-09-10 1987-06-16 The United States Of America As Represented By The Secretary Of The Air Force Alignment reference device
JPS63198086A (ja) * 1987-02-13 1988-08-16 Minolta Camera Co Ltd 現像装置
JPH0779161B2 (ja) * 1987-11-17 1995-08-23 三洋電機株式会社 電荷転送レジスタ
US5055892A (en) * 1989-08-29 1991-10-08 Hewlett-Packard Company High efficiency lamp or light accepter
US5204871A (en) * 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
US5174646A (en) * 1990-12-06 1992-12-29 The Regents Of The University Of California Heat transfer assembly for a fluorescent lamp and fixture
US5160200A (en) * 1991-03-06 1992-11-03 R & D Molded Products, Inc. Wedge-base LED bulb housing
GB2270199B (en) * 1992-08-25 1995-05-10 Mitsubishi Cable Ind Ltd Semiconductor light emitting element
US5655830A (en) * 1993-12-01 1997-08-12 General Signal Corporation Lighting device
US5463280A (en) * 1994-03-03 1995-10-31 National Service Industries, Inc. Light emitting diode retrofit lamp
JP2596709B2 (ja) * 1994-04-06 1997-04-02 都築 省吾 半導体レーザ素子を用いた照明用光源装置
US5595438A (en) * 1995-03-16 1997-01-21 Burd David M Reflective hybrid lamp assembly
US5721430A (en) * 1995-04-13 1998-02-24 Engelhard Sensor Technologies Inc. Passive and active infrared analysis gas sensors and applicable multichannel detector assembles
US5575459A (en) * 1995-04-27 1996-11-19 Uniglo Canada Inc. Light emitting diode lamp
US5765940A (en) * 1995-10-31 1998-06-16 Dialight Corporation LED-illuminated stop/tail lamp assembly
US5707139A (en) * 1995-11-01 1998-01-13 Hewlett-Packard Company Vertical cavity surface emitting laser arrays for illumination
US5688042A (en) * 1995-11-17 1997-11-18 Lumacell, Inc. LED lamp
US6238077B1 (en) 1996-01-23 2001-05-29 Advanced Optical Technologies, L.L.C. Apparatus for projecting electromagnetic radiation with a tailored intensity distribution
US5806965A (en) * 1996-01-30 1998-09-15 R&M Deese, Inc. LED beacon light
US5890794A (en) * 1996-04-03 1999-04-06 Abtahi; Homayoon Lighting units
JP2909023B2 (ja) * 1996-05-01 1999-06-23 日吉電子株式会社 長尺発光装置
US5803579A (en) 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
US6045240A (en) * 1996-06-27 2000-04-04 Relume Corporation LED lamp assembly with means to conduct heat away from the LEDS
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US6015979A (en) * 1997-08-29 2000-01-18 Kabushiki Kaisha Toshiba Nitride-based semiconductor element and method for manufacturing the same
US5947588A (en) 1997-10-06 1999-09-07 Grand General Accessories Manufacturing Inc. Light fixture with an LED light bulb having a conventional connection post
US5982092A (en) * 1997-10-06 1999-11-09 Chen; Hsing Light Emitting Diode planar light source with blue light or ultraviolet ray-emitting luminescent crystal with optional UV filter
US6412971B1 (en) * 1998-01-02 2002-07-02 General Electric Company Light source including an array of light emitting semiconductor devices and control method
US6036336A (en) * 1998-05-08 2000-03-14 Wu; Chen H. Light emitting diode retrofitting lamps for illuminated traffic signs
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
DE69936375T2 (de) * 1998-09-17 2008-02-28 Koninklijke Philips Electronics N.V. Led-leuchte
US5941631A (en) * 1998-10-29 1999-08-24 Bright Yin Huey Co., Ltd. Pendent lamp structure
US6149283A (en) * 1998-12-09 2000-11-21 Rensselaer Polytechnic Institute (Rpi) LED lamp with reflector and multicolor adjuster
JP2000183407A (ja) * 1998-12-16 2000-06-30 Rohm Co Ltd 光半導体装置
JP2000277844A (ja) * 1999-03-25 2000-10-06 Nippon Telegr & Teleph Corp <Ntt> 電気光変換装置
JP3458823B2 (ja) * 1999-05-11 2003-10-20 日亜化学工業株式会社 面発光装置
US6786625B2 (en) 1999-05-24 2004-09-07 Jam Strait, Inc. LED light module for vehicles
US6502952B1 (en) * 1999-06-23 2003-01-07 Fred Jack Hartley Light emitting diode assembly for flashlights
US6331111B1 (en) 1999-09-24 2001-12-18 Cao Group, Inc. Curing light system useful for curing light activated composite materials
US6955537B2 (en) 1999-09-24 2005-10-18 Cao Group, Inc. Light for use in activating light-activated materials, the light having a plurality of light emitting semiconductor chips emitting light of differing peak wavelengths to provide a wide light spectrum profile
US6719559B2 (en) 1999-09-24 2004-04-13 Densen Cao Curing light
US6981867B2 (en) 1999-09-24 2006-01-03 Cao Group, Inc. Curing light
US7077648B2 (en) 1999-09-24 2006-07-18 Cao Group, Inc. Curing light
US6971876B2 (en) 1999-09-24 2005-12-06 Cao Group, Inc. Curing light
US7066732B2 (en) 1999-09-24 2006-06-27 Cao Group, Inc. Method for curing light-curable materials
US6988890B2 (en) 1999-09-24 2006-01-24 Cao Group, Inc. Curing light
US6971875B2 (en) 1999-09-24 2005-12-06 Cao Group, Inc. Dental curing light
US7267457B2 (en) 1999-09-24 2007-09-11 Cao Group, Inc. Method for detecting forensic evidence
US6932600B2 (en) 1999-09-24 2005-08-23 Cao Group, Inc. Curing light
US6954270B2 (en) 2002-12-20 2005-10-11 Cao Group, Inc. Method for detecting forensic evidence
US7252678B2 (en) 1999-09-24 2007-08-07 Ostler Calvin D Forensic light using semiconductor light source
US6910886B2 (en) 1999-09-24 2005-06-28 Cao Group, Inc. Curing light
US6755649B2 (en) 1999-09-24 2004-06-29 Cao Group, Inc. Curing light
US7294364B2 (en) 1999-09-24 2007-11-13 Cao Group, Inc. Method for curing composite materials
US7086858B2 (en) 1999-09-24 2006-08-08 Cao Group, Inc. Semiconductor curing light system useful for curing light activated composite materials
US7283230B2 (en) 1999-09-24 2007-10-16 Cao Group, Inc Semiconductor forensic light kit
US6979193B2 (en) 1999-09-24 2005-12-27 Cao Group, Inc. Curing light
US6755648B2 (en) 1999-09-24 2004-06-29 Cao Group, Inc. Curing light
US6929472B2 (en) 1999-09-24 2005-08-16 Cao Group, Inc. Curing light
US7094054B2 (en) 1999-09-24 2006-08-22 Cao Group, Inc. Dental curing light
US6926524B2 (en) 1999-09-24 2005-08-09 Cao Group, Inc. Curing light
US6783362B2 (en) 1999-09-24 2004-08-31 Cao Group, Inc. Dental curing light using primary and secondary heat sink combination
US20030060013A1 (en) 1999-09-24 2003-03-27 Bruce D. Marchant Method of manufacturing trench field effect transistors with trenched heavy body
US6988891B2 (en) 1999-09-24 2006-01-24 Cao Group, Inc. Curing light
US6780010B2 (en) 1999-09-24 2004-08-24 Cao Group, Inc. Curing light
US6824294B2 (en) 1999-09-24 2004-11-30 Cao Group, Inc. Light for use in activating light-activated materials, the light having a plurality of chips mounted in a gross well of a heat sink, and a dome covering the chips
US6974319B2 (en) 1999-09-24 2005-12-13 Cao Group, Inc. Curing light
US6719558B2 (en) 1999-09-24 2004-04-13 Densen Cao Curing light
US20040120146A1 (en) 2002-12-20 2004-06-24 Cao Group, Inc Forensic light kit using semiconductor light source
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
TW512214B (en) * 2000-01-07 2002-12-01 Koninkl Philips Electronics Nv Luminaire
US6492725B1 (en) 2000-02-04 2002-12-10 Lumileds Lighting, U.S., Llc Concentrically leaded power semiconductor device package
US6577073B2 (en) * 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
US6700158B1 (en) 2000-08-18 2004-03-02 Fairchild Semiconductor Corporation Trench corner protection for trench MOSFET
US6580228B1 (en) * 2000-08-22 2003-06-17 Light Sciences Corporation Flexible substrate mounted solid-state light sources for use in line current lamp sockets
US6635987B1 (en) * 2000-09-26 2003-10-21 General Electric Company High power white LED lamp structure using unique phosphor application for LED lighting products
US6561680B1 (en) * 2000-11-14 2003-05-13 Kelvin Shih Light emitting diode with thermally conductive structure
JP2002208736A (ja) * 2001-01-11 2002-07-26 Nippon Telegr & Teleph Corp <Ntt> 発光装置
US6498108B2 (en) 2001-02-12 2002-12-24 Fairchild Semiconductor Corporation Method for removing surface contamination on semiconductor substrates
US6541800B2 (en) * 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
US6402338B1 (en) 2001-04-05 2002-06-11 Mitzel Machining Inc. Enclosure illumination system
US7108504B2 (en) 2001-07-10 2006-09-19 Cao Group, Inc. Light for use in activating light-activated materials, the light having insulators and an air jacket
US6799967B2 (en) 2001-07-10 2004-10-05 Cao Group, Inc. Light for use in activating light-activated materials, the light having a plurality of light emitting single chip arrays
US6558021B2 (en) * 2001-08-10 2003-05-06 Leotek Electronics Corporation Light emitting diode modules for illuminated signs
JP4076329B2 (ja) * 2001-08-13 2008-04-16 エイテックス株式会社 Led電球
US8201985B2 (en) 2001-08-24 2012-06-19 Cao Group, Inc. Light bulb utilizing a replaceable LED light source
US7224001B2 (en) 2001-08-24 2007-05-29 Densen Cao Semiconductor light source
US6634770B2 (en) 2001-08-24 2003-10-21 Densen Cao Light source using semiconductor devices mounted on a heat sink
US7976211B2 (en) 2001-08-24 2011-07-12 Densen Cao Light bulb utilizing a replaceable LED light source
US6465961B1 (en) 2001-08-24 2002-10-15 Cao Group, Inc. Semiconductor light source using a heat sink with a plurality of panels
US8569785B2 (en) 2001-08-24 2013-10-29 Cao Group, Inc. Semiconductor light source for illuminating a physical space including a 3-dimensional lead frame
US6719446B2 (en) 2001-08-24 2004-04-13 Densen Cao Semiconductor light source for providing visible light to illuminate a physical space
US7728345B2 (en) 2001-08-24 2010-06-01 Cao Group, Inc. Semiconductor light source for illuminating a physical space including a 3-dimensional lead frame
US20040256630A1 (en) 2001-08-24 2004-12-23 Densen Cao Illuminating light
US6746885B2 (en) 2001-08-24 2004-06-08 Densen Cao Method for making a semiconductor light source
US6634771B2 (en) * 2001-08-24 2003-10-21 Densen Cao Semiconductor light source using a primary and secondary heat sink combination
US6866401B2 (en) * 2001-12-21 2005-03-15 General Electric Company Zoomable spot module
US6682211B2 (en) * 2001-09-28 2004-01-27 Osram Sylvania Inc. Replaceable LED lamp capsule
US6715900B2 (en) * 2002-05-17 2004-04-06 A L Lightech, Inc. Light source arrangement
US6815241B2 (en) 2002-09-25 2004-11-09 Cao Group, Inc. GaN structures having low dislocation density and methods of manufacture
JP4360595B2 (ja) * 2002-10-18 2009-11-11 ペルノックス株式会社 光電変換装置
US20040095738A1 (en) * 2002-11-15 2004-05-20 Der-Ming Juang Base plate for a light emitting diode chip
US6840654B2 (en) 2002-11-20 2005-01-11 Acolyte Technologies Corp. LED light and reflector
US20040120151A1 (en) 2002-12-20 2004-06-24 Cao Group, Inc. Forensic light using semiconductor light source
US20080311545A1 (en) 2004-08-06 2008-12-18 Cao Group, Inc. Systems and Methods for Utilizing Ultrasonic Energy to Activate Tooth Whitening Substances
US20050074723A1 (en) 2003-03-10 2005-04-07 Ostler Calvin D. Systems and methods for utilizing ultrasonic energy to activate tooth whitening substances
US20090155740A1 (en) 2004-08-06 2009-06-18 Cao Group, Inc. Ultrasonic Dental Treatment System
US6903380B2 (en) * 2003-04-11 2005-06-07 Weldon Technologies, Inc. High power light emitting diode
US6974233B1 (en) * 2003-05-29 2005-12-13 Truman Aubrey Fluorescent lighting fixture assemblies
US20050002975A1 (en) 2003-06-06 2005-01-06 Densen Cao Structures and methods for delivering topical compositions
US20040264196A1 (en) * 2003-06-30 2004-12-30 Kuo-Fen Shu LED spotlight (type I)
US6921181B2 (en) * 2003-07-07 2005-07-26 Mei-Feng Yen Flashlight with heat-dissipation device
US6982518B2 (en) * 2003-10-01 2006-01-03 Enertron, Inc. Methods and apparatus for an LED light
US6948829B2 (en) * 2004-01-28 2005-09-27 Dialight Corporation Light emitting diode (LED) light bulbs
US20050174801A1 (en) 2004-02-05 2005-08-11 Densen Cao Backlight
US20050174753A1 (en) 2004-02-06 2005-08-11 Densen Cao Mining light
KR200350484Y1 (ko) * 2004-02-06 2004-05-13 주식회사 대진디엠피 콘상 엘이디 조명등
US7530808B2 (en) 2004-03-10 2009-05-12 Cao Group, Inc Binary dental bleaching using switch-closable double barrel syringe
US20050243550A1 (en) 2004-04-30 2005-11-03 Albert Stekelenburg LED bulb
TWI257991B (en) * 2004-05-12 2006-07-11 Kun-Lieh Huang Lighting device with auxiliary heat dissipation functions
KR100593919B1 (ko) * 2004-07-01 2006-06-30 삼성전기주식회사 차량 전조등용 발광 다이오드 모듈 및 이를 구비한 차량전조등
US20070170444A1 (en) 2004-07-07 2007-07-26 Cao Group, Inc. Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
US20090011385A1 (en) 2004-08-06 2009-01-08 Cao Group, Inc. Non-invasive method for treating periodontal disease
US7658510B2 (en) * 2004-08-18 2010-02-09 Remco Solid State Lighting Inc. System and method for power control in a LED luminaire
JP2006080391A (ja) 2004-09-10 2006-03-23 Koha Co Ltd 発光装置
US8834457B2 (en) 2004-09-22 2014-09-16 Cao Group, Inc. Modular surgical laser systems
US20080086117A1 (en) 2004-09-22 2008-04-10 Cao Group, Inc. Modular Surgical Laser Systems
US8337097B2 (en) 2004-09-22 2012-12-25 Densen Cao Modular surgical laser systems
US7485116B2 (en) 2004-09-22 2009-02-03 Densen Cao Laser systems, with a fiber storage and dispensing unit, useful in medicine and dentistry
DE102005028748A1 (de) * 2004-10-25 2006-05-04 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Bauelementgehäuse
US20060092637A1 (en) * 2004-10-29 2006-05-04 Peter Yeh LED illumination module
US20060095095A1 (en) 2004-11-03 2006-05-04 Cao Group, Inc. Cancer treatment using laser
JP2006186158A (ja) * 2004-12-28 2006-07-13 Sharp Corp 発光ダイオードランプおよび発光ダイオード表示装置
US7226189B2 (en) 2005-04-15 2007-06-05 Taiwan Oasis Technology Co., Ltd. Light emitting diode illumination apparatus
US20060271068A1 (en) 2005-04-25 2006-11-30 Cao Group, Inc. Flexible tips for delivering materials and guiding fibers
US20060275732A1 (en) 2005-06-01 2006-12-07 Cao Group, Inc. Curing light
US20060275733A1 (en) 2005-06-01 2006-12-07 Cao Group, Inc. Three-dimensional curing light
US20060274529A1 (en) 2005-06-01 2006-12-07 Cao Group, Inc. LED light bulb
US8998616B2 (en) 2005-06-10 2015-04-07 Cao Group, Inc. Laser curettage
US20100004640A1 (en) 2005-08-23 2010-01-07 Cao Group, Inc. Cancer Treatment Using Lasers
US20080071256A1 (en) 2005-08-23 2008-03-20 Densen Cao Cancer treatment using low energy lasers
US20070265607A1 (en) 2005-08-23 2007-11-15 Densen Cao Cancer treatment using low energy lasers
JP4582791B2 (ja) * 2005-08-24 2010-11-17 スタンレー電気株式会社 Led光源前照灯
TWI266428B (en) * 2005-08-30 2006-11-11 Quarton Inc Semiconductor chip package and application device thereof
US7196358B1 (en) * 2005-11-25 2007-03-27 Solidlite Corporation Light emitting diode module with high heat dissipation
JP2007165803A (ja) * 2005-12-16 2007-06-28 Sharp Corp 発光装置
US20070159828A1 (en) * 2006-01-09 2007-07-12 Ceramate Technical Co., Ltd. Vertical LED lamp with a 360-degree radiation and a high cooling efficiency
US9295619B2 (en) 2006-02-08 2016-03-29 Cao Group, Inc. Dental treatment compositions and conformable dental treatment trays using the same
US20070225658A1 (en) 2006-03-21 2007-09-27 Jensen Steven D Unit Dose Delivery Systems
US7549772B2 (en) * 2006-03-31 2009-06-23 Pyroswift Holding Co., Limited LED lamp conducting structure with plate-type heat pipe
US20070253202A1 (en) * 2006-04-28 2007-11-01 Chaun-Choung Technology Corp. LED lamp and heat-dissipating structure thereof
US20080080184A1 (en) 2006-10-03 2008-04-03 Cao Group Inc. Pixilated LED Light Source for Channel Letter Illumination
US7645086B2 (en) 2006-12-06 2010-01-12 Cao Group, Inc. Delivery tip for flowable materials
US20080197374A1 (en) * 2007-02-15 2008-08-21 Wen-Kung Sung High-power light-emitting diode
US7588351B2 (en) * 2007-09-27 2009-09-15 Osram Sylvania Inc. LED lamp with heat sink optic
US20090227875A1 (en) 2008-03-04 2009-09-10 Cao Group, Inc. Three-dimensional Imaging System
US20100173267A1 (en) 2009-01-06 2010-07-08 Cao Group, Inc. Method for producing restorative tooth preparation and treatment compositions and product
KR20110117090A (ko) 2009-02-17 2011-10-26 카오 그룹, 인코포레이티드 공간 조명을 위한 led 광 전구
US20100254657A1 (en) 2009-04-01 2010-10-07 Cao Group, Inc. Attenuator coupling for laser systems
US8220115B2 (en) 2009-04-01 2012-07-17 Nichols Jack R Holder for handpiece devices
BR112012006160B1 (pt) 2009-09-18 2022-05-24 Cao Group, Inc Sistema e método de embalagem
US20110111373A1 (en) 2009-11-12 2011-05-12 Cao Group, Inc. Full Arch Dental Treatment Devices and Systems
WO2011120001A1 (en) 2010-03-25 2011-09-29 Cao Group, Inc. Oral ph and buffering capacity modifiers
KR101039994B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광소자 및 이를 구비한 라이트 유닛
US20140043814A1 (en) * 2012-08-07 2014-02-13 Toshiba Lighting & Technology Corporation Light emitting module and lighting system
KR20140100325A (ko) * 2013-02-06 2014-08-14 삼성전자주식회사 발광 소자 패키지 모듈

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101707197B (zh) * 2009-09-23 2013-09-18 东莞市莱硕光电科技有限公司 全方位发光led器件
GB2485745A (en) * 2009-09-27 2012-05-23 Dongguan Light Source Opto Tech Co Ltd LED device for three-dimensional illumination
GB2485745B (en) * 2009-09-27 2013-11-20 Dongguan Light Source Opto Tech Co Ltd LED device for three-dimensional illumination
WO2011035490A1 (zh) * 2009-09-27 2011-03-31 东莞市莱硕光电科技有限公司 用于三维照明的led器件
CN101813267B (zh) * 2009-12-23 2015-10-07 深圳市汇能环保科技有限公司 一种led路灯和led路灯显示系统
CN101813267A (zh) * 2009-12-23 2010-08-25 北京巨数数字技术开发有限公司 一种led路灯和led路灯显示系统
CN102668338A (zh) * 2010-01-28 2012-09-12 株式会社安川电机 旋转电机
WO2011109948A1 (zh) * 2010-03-12 2011-09-15 浙江金谷包装印刷有限公司 一种功率型发光二极管
US8264076B2 (en) 2010-03-12 2012-09-11 Changyou Bian Power type LED
CN101839410B (zh) * 2010-04-15 2012-05-09 北京朗波尔光电股份有限公司 空间全方位发光led
CN101839410A (zh) * 2010-04-15 2010-09-22 北京朗波尔光电股份有限公司 空间全方位发光led
TWI422776B (zh) * 2010-12-15 2014-01-11 Cal Comp Electronics & Comm Co 發光裝置
CN102096275A (zh) * 2010-12-21 2011-06-15 周志坚 一种多面体红外、紫外发射led夜视摄像头
CN103855141A (zh) * 2012-11-29 2014-06-11 光宝光电(常州)有限公司 发光二极管元件、发光二极管模块及发光二极管元件的制作方法
CN110931621A (zh) * 2019-12-06 2020-03-27 马鞍山三投光电科技有限公司 一种用于交通信号灯上的发光二极管

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US20080111150A1 (en) 2008-05-15
US7786499B2 (en) 2010-08-31
CN101454910B (zh) 2013-05-01
US10096759B2 (en) 2018-10-09
US20170352792A1 (en) 2017-12-07
US20130234174A1 (en) 2013-09-12
US9761775B2 (en) 2017-09-12
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US20060214179A1 (en) 2006-09-28
US7728345B2 (en) 2010-06-01
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US10516086B2 (en) 2019-12-24
KR101389196B1 (ko) 2014-04-24
US20100224905A1 (en) 2010-09-09

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