CN101383358B - 分割光电二极管 - Google Patents
分割光电二极管 Download PDFInfo
- Publication number
- CN101383358B CN101383358B CN2008102127533A CN200810212753A CN101383358B CN 101383358 B CN101383358 B CN 101383358B CN 2008102127533 A CN2008102127533 A CN 2008102127533A CN 200810212753 A CN200810212753 A CN 200810212753A CN 101383358 B CN101383358 B CN 101383358B
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- CN
- China
- Prior art keywords
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- layer
- semiconductor layer
- photosensitive area
- segmented photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005316 response function Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/13—Optical detectors therefor
- G11B7/131—Arrangement of detectors in a multiple array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007228800 | 2007-09-04 | ||
JP2007-228800 | 2007-09-04 | ||
JP2007228800A JP2009064800A (ja) | 2007-09-04 | 2007-09-04 | 分割フォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101383358A CN101383358A (zh) | 2009-03-11 |
CN101383358B true CN101383358B (zh) | 2011-01-12 |
Family
ID=40406077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102127533A Expired - Fee Related CN101383358B (zh) | 2007-09-04 | 2008-09-04 | 分割光电二极管 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090057806A1 (zh) |
JP (1) | JP2009064800A (zh) |
KR (1) | KR101026245B1 (zh) |
CN (1) | CN101383358B (zh) |
TW (1) | TW200915592A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102299164A (zh) * | 2011-09-13 | 2011-12-28 | 上海中科高等研究院 | 图像传感器及其制造方法 |
TWI610453B (zh) * | 2017-01-26 | 2018-01-01 | 光電二極體及光電二極體的製造方法 | |
CN108336105B (zh) * | 2018-04-04 | 2019-02-15 | 武汉新芯集成电路制造有限公司 | 一种图像传感器及其器件邻近结构 |
CN112271229B (zh) * | 2020-09-25 | 2023-03-28 | 华东光电集成器件研究所 | 一种硅基背照pin器件结构 |
CN112309440B (zh) * | 2020-10-21 | 2022-04-26 | 西北工业大学 | 基于铂-二维硒化铟-少层石墨肖特基二极管的光存储器件及存储方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2828244A (en) * | 1957-01-24 | 1958-03-25 | Miles Lab | Stabilized diethylstilbestrol diphosphate solution and method of preparing same |
JPH09260501A (ja) * | 1996-03-25 | 1997-10-03 | Sanyo Electric Co Ltd | ホトダイオード内蔵半導体集積回路 |
JP3170463B2 (ja) * | 1996-09-30 | 2001-05-28 | シャープ株式会社 | 回路内蔵受光素子 |
JP4077063B2 (ja) * | 1997-05-27 | 2008-04-16 | 浜松ホトニクス株式会社 | BiCMOS内蔵受光半導体装置 |
AU2185499A (en) * | 1998-01-30 | 1999-08-16 | Hamamatsu Photonics K.K. | Light-receiving semiconductor device with buit-in bicmos and avalanche photodiode |
JP4131031B2 (ja) * | 1998-03-17 | 2008-08-13 | ソニー株式会社 | 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法 |
JP2000299452A (ja) | 1999-04-16 | 2000-10-24 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
KR100594277B1 (ko) * | 2004-05-25 | 2006-06-30 | 삼성전자주식회사 | 포토 다이오드 및 그 제조방법 |
JP2006278620A (ja) * | 2005-03-29 | 2006-10-12 | Texas Instr Japan Ltd | 半導体装置およびその製造方法 |
JP4969871B2 (ja) * | 2006-02-28 | 2012-07-04 | オンセミコンダクター・トレーディング・リミテッド | 集積回路製造方法 |
-
2007
- 2007-09-04 JP JP2007228800A patent/JP2009064800A/ja active Pending
-
2008
- 2008-08-07 TW TW097130024A patent/TW200915592A/zh unknown
- 2008-08-14 KR KR1020080079971A patent/KR101026245B1/ko not_active IP Right Cessation
- 2008-09-04 US US12/204,078 patent/US20090057806A1/en not_active Abandoned
- 2008-09-04 CN CN2008102127533A patent/CN101383358B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20090024620A (ko) | 2009-03-09 |
CN101383358A (zh) | 2009-03-11 |
JP2009064800A (ja) | 2009-03-26 |
KR101026245B1 (ko) | 2011-03-31 |
US20090057806A1 (en) | 2009-03-05 |
TW200915592A (en) | 2009-04-01 |
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Legal Events
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---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: HU'NAN QIU ZEYOU PATENT STRATEGIC PLANNING CO., LT Free format text: FORMER OWNER: QIU ZEYOU Effective date: 20101101 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 410005 28/F, SHUNTIANCHENG, NO.185, FURONG MIDDLE ROAD, CHANGSHA CITY, HU'NAN PROVINCE TO: 410205 JUXING INDUSTRY BASE, NO.8, LUJING ROAD, CHANGSHA HIGH-TECH. DEVELOPMENT ZONE, YUELU DISTRICT, CHANGSHA CITY, HU'NAN PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20101109 Address after: Kanagawa, Japan Applicant after: Renesas Electronics Corporation Address before: Kanagawa, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110112 Termination date: 20190904 |