CN101373785B - 光电转换器件和多芯片图像传感器 - Google Patents

光电转换器件和多芯片图像传感器 Download PDF

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Publication number
CN101373785B
CN101373785B CN200810210016XA CN200810210016A CN101373785B CN 101373785 B CN101373785 B CN 101373785B CN 200810210016X A CN200810210016X A CN 200810210016XA CN 200810210016 A CN200810210016 A CN 200810210016A CN 101373785 B CN101373785 B CN 101373785B
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China
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region
extrinsic region
pixel
type
photoelectric conversion
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Expired - Fee Related
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CN200810210016XA
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Chinese (zh)
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CN101373785A (zh
Inventor
山崎和男
光地哲伸
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN200810210016XA 2007-08-24 2008-08-22 光电转换器件和多芯片图像传感器 Expired - Fee Related CN101373785B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007218330A JP5180537B2 (ja) 2007-08-24 2007-08-24 光電変換装置及びマルチチップイメージセンサ
JP2007-218330 2007-08-24
JP2007218330 2007-08-24

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Publication Number Publication Date
CN101373785A CN101373785A (zh) 2009-02-25
CN101373785B true CN101373785B (zh) 2010-06-02

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CN200810210016XA Expired - Fee Related CN101373785B (zh) 2007-08-24 2008-08-22 光电转换器件和多芯片图像传感器

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US (1) US7816755B2 (enExample)
JP (1) JP5180537B2 (enExample)
CN (1) CN101373785B (enExample)
TW (1) TWI373842B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4891308B2 (ja) 2008-12-17 2012-03-07 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いた撮像システム
JP5562172B2 (ja) 2010-08-10 2014-07-30 キヤノン株式会社 定電流回路及びそれを用いた固体撮像装置
JP6045136B2 (ja) 2011-01-31 2016-12-14 キヤノン株式会社 光電変換装置
JP6087681B2 (ja) * 2013-03-21 2017-03-01 キヤノン株式会社 固体撮像装置及び撮像システム
JP6246004B2 (ja) 2014-01-30 2017-12-13 キヤノン株式会社 固体撮像装置
JP2015177034A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP6412328B2 (ja) 2014-04-01 2018-10-24 キヤノン株式会社 固体撮像装置およびカメラ
JP6482186B2 (ja) 2014-05-23 2019-03-13 キヤノン株式会社 撮像装置及びその駆動方法
JP6480768B2 (ja) 2015-03-17 2019-03-13 キヤノン株式会社 固体撮像装置及びその駆動方法
JP6738200B2 (ja) * 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
JP6806553B2 (ja) 2016-12-15 2021-01-06 キヤノン株式会社 撮像装置、撮像装置の駆動方法及び撮像システム
US10834354B2 (en) 2018-06-25 2020-11-10 Canon Kabushiki Kaisha Imaging device, imaging system, movable object, and signal processing device
JP7245014B2 (ja) 2018-09-10 2023-03-23 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の駆動方法
JP7353752B2 (ja) 2018-12-06 2023-10-02 キヤノン株式会社 光電変換装置及び撮像システム
JP7303682B2 (ja) 2019-07-19 2023-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP7374639B2 (ja) 2019-07-19 2023-11-07 キヤノン株式会社 光電変換装置及び撮像システム
KR20210112055A (ko) * 2020-03-04 2021-09-14 에스케이하이닉스 주식회사 픽셀 및 이를 포함하는 이미지 센서
CN113497905B (zh) 2020-04-01 2024-03-12 佳能株式会社 光电转换设备、成像系统和移动物体
KR20220043463A (ko) * 2020-09-29 2022-04-05 에스케이하이닉스 주식회사 이미지 센싱 장치
KR20220075096A (ko) 2020-11-27 2022-06-07 삼성전자주식회사 이미지 센서
EP4195683A1 (en) 2021-12-07 2023-06-14 Canon Kabushiki Kaisha Photoelectric conversion device
JP7414791B2 (ja) 2021-12-07 2024-01-16 キヤノン株式会社 光電変換装置、機器
JP2023099394A (ja) 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および機器
WO2024142599A1 (ja) * 2022-12-26 2024-07-04 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の製造方法、及び電子機器

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2521789B2 (ja) * 1988-05-31 1996-08-07 沖電気工業株式会社 固体撮像装置の感光部構造
US5563429A (en) * 1994-06-14 1996-10-08 Nikon Corp. Solid state imaging device
JP3412390B2 (ja) * 1996-03-18 2003-06-03 株式会社ニコン 光電変換装置
JP3874135B2 (ja) * 1997-12-05 2007-01-31 株式会社ニコン 固体撮像素子
JPH11261046A (ja) 1998-03-12 1999-09-24 Canon Inc 固体撮像装置
JP3571909B2 (ja) 1998-03-19 2004-09-29 キヤノン株式会社 固体撮像装置及びその製造方法
JP3457551B2 (ja) * 1998-11-09 2003-10-20 株式会社東芝 固体撮像装置
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6717151B2 (en) 2000-07-10 2004-04-06 Canon Kabushiki Kaisha Image pickup apparatus
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP4282049B2 (ja) * 2002-02-28 2009-06-17 キヤノン株式会社 半導体装置、光電変換装置及びカメラ
US7470944B2 (en) * 2002-06-26 2008-12-30 Nikon Corporation Solid-state image sensor
US7473977B2 (en) * 2003-03-06 2009-01-06 Sony Corporation Method of driving solid state image sensing device
JP4228887B2 (ja) * 2003-04-02 2009-02-25 ソニー株式会社 固体撮像素子およびその製造方法
JP2004319683A (ja) * 2003-04-15 2004-11-11 Sharp Corp 固体撮像装置およびその駆動方法
TWI236838B (en) * 2004-04-22 2005-07-21 Avision Inc Image acquisition device and method capable of rotating document images
JP2005317875A (ja) * 2004-04-30 2005-11-10 Toshiba Corp 固体撮像装置
JP4507769B2 (ja) * 2004-08-31 2010-07-21 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール
JP4069918B2 (ja) * 2004-09-27 2008-04-02 セイコーエプソン株式会社 固体撮像装置
JP4508891B2 (ja) 2005-01-28 2010-07-21 キヤノン株式会社 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置
JP4572130B2 (ja) * 2005-03-09 2010-10-27 富士フイルム株式会社 固体撮像素子
JP2006294871A (ja) * 2005-04-11 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2007027558A (ja) 2005-07-20 2007-02-01 Canon Inc 光電変換装置、及びマルチチップ型イメージセンサ
JP4679340B2 (ja) * 2005-11-11 2011-04-27 株式会社東芝 固体撮像装置
JP2007335751A (ja) * 2006-06-16 2007-12-27 Toshiba Corp 固体撮像装置
JP5116264B2 (ja) * 2006-07-10 2013-01-09 キヤノン株式会社 光電変換装置、光電変換装置の製造方法および光電変換装置を用いた撮像システム

Also Published As

Publication number Publication date
CN101373785A (zh) 2009-02-25
US20090050993A1 (en) 2009-02-26
TW200924179A (en) 2009-06-01
JP5180537B2 (ja) 2013-04-10
JP2009054696A (ja) 2009-03-12
US7816755B2 (en) 2010-10-19
TWI373842B (en) 2012-10-01

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