CN101366124B - 超快恢复二极管 - Google Patents

超快恢复二极管 Download PDF

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Publication number
CN101366124B
CN101366124B CN2006800513966A CN200680051396A CN101366124B CN 101366124 B CN101366124 B CN 101366124B CN 2006800513966 A CN2006800513966 A CN 2006800513966A CN 200680051396 A CN200680051396 A CN 200680051396A CN 101366124 B CN101366124 B CN 101366124B
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China
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lightly doped
wells
polarity
layer
doped layer
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Expired - Fee Related
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CN2006800513966A
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Chinese (zh)
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CN101366124A (zh
Inventor
理查德·弗朗西斯
李健
范杨榆
埃里克·约翰逊
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Energy Integration Corp
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Qspeed Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

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  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Rectifiers (AREA)
CN2006800513966A 2005-12-27 2006-12-19 超快恢复二极管 Expired - Fee Related CN101366124B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/320,313 US7696598B2 (en) 2005-12-27 2005-12-27 Ultrafast recovery diode
US11/320,313 2005-12-27
PCT/US2006/049118 WO2007076056A2 (en) 2005-12-27 2006-12-19 Ultrafast recovery diode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2012101351735A Division CN102683428A (zh) 2005-12-27 2006-12-19 超快恢复二极管

Publications (2)

Publication Number Publication Date
CN101366124A CN101366124A (zh) 2009-02-11
CN101366124B true CN101366124B (zh) 2012-07-04

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CN2012101351735A Pending CN102683428A (zh) 2005-12-27 2006-12-19 超快恢复二极管

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CN2012101351735A Pending CN102683428A (zh) 2005-12-27 2006-12-19 超快恢复二极管

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US (1) US7696598B2 (https=)
JP (2) JP5059025B2 (https=)
CN (2) CN101366124B (https=)
TW (1) TWI381532B (https=)
WO (1) WO2007076056A2 (https=)

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JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
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CN102723369B (zh) * 2012-06-12 2014-12-10 电子科技大学 一种具有低导通压降的P-i-N二极管
CN103579365A (zh) * 2012-07-24 2014-02-12 杭州恩能科技有限公司 一种新型二极管器件
CN103579364A (zh) * 2012-07-24 2014-02-12 杭州恩能科技有限公司 一种新型平面型二极管器件
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US9331197B2 (en) 2013-08-08 2016-05-03 Cree, Inc. Vertical power transistor device
US9455621B2 (en) 2013-08-28 2016-09-27 Power Integrations, Inc. Controller IC with zero-crossing detector and capacitor discharge switching element
US9029974B2 (en) * 2013-09-11 2015-05-12 Infineon Technologies Ag Semiconductor device, junction field effect transistor and vertical field effect transistor
US9318597B2 (en) 2013-09-20 2016-04-19 Cree, Inc. Layout configurations for integrating schottky contacts into a power transistor device
US10600903B2 (en) 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
US20150084063A1 (en) * 2013-09-20 2015-03-26 Cree, Inc. Semiconductor device with a current spreading layer
US10868169B2 (en) 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
CN104701367A (zh) * 2013-12-06 2015-06-10 上海华虹宏力半导体制造有限公司 稳流管及制造方法
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
JP6287377B2 (ja) * 2014-03-11 2018-03-07 住友電気工業株式会社 ワイドバンドギャップ半導体装置
JP6539026B2 (ja) * 2014-08-22 2019-07-03 日産自動車株式会社 半導体装置及びその製造方法
CN104269445B (zh) * 2014-10-11 2017-11-10 丽晶美能（北京）电子技术有限公司 快恢复二极管及快恢复二极管的制作方法
CN106033781A (zh) * 2015-03-16 2016-10-19 中航（重庆）微电子有限公司 肖特基势垒二极管及其制备方法
US9602009B1 (en) 2015-12-08 2017-03-21 Power Integrations, Inc. Low voltage, closed loop controlled energy storage circuit
US9629218B1 (en) 2015-12-28 2017-04-18 Power Integrations, Inc. Thermal protection for LED bleeder in fault condition
JP6787690B2 (ja) 2016-05-19 2020-11-18 ローム株式会社 高速ダイオード及びその製造方法
CN107731891A (zh) * 2016-08-14 2018-02-23 朱江 一种沟槽肖特基半导体装置
CN106784021A (zh) * 2016-12-15 2017-05-31 东莞市联洲知识产权运营管理有限公司 一种改进的沟槽式肖特基整流器件及其制造方法
US11749758B1 (en) 2019-11-05 2023-09-05 Semiq Incorporated Silicon carbide junction barrier schottky diode with wave-shaped regions
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode
JP2022159760A (ja) * 2021-04-05 2022-10-18 ローム株式会社 半導体装置
CN113659014B (zh) * 2021-10-20 2022-01-18 四川洪芯微科技有限公司 一种含有阴极短接槽栅结构的功率二极管
CN115132726B (zh) * 2022-09-02 2022-11-29 深圳芯能半导体技术有限公司 快恢复功率器件的结构、制造方法及电子设备
CN115172445B (zh) * 2022-09-02 2022-11-29 深圳芯能半导体技术有限公司 快恢复功率器件的结构、制造方法及电子设备
CN115312581B (zh) * 2022-10-10 2023-01-03 深圳市威兆半导体股份有限公司 快恢复二极管及其制备方法
CN115312591B (zh) * 2022-10-10 2022-12-23 深圳市威兆半导体股份有限公司 一种快恢复二极管及其制备方法

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Also Published As

Publication number Publication date
CN102683428A (zh) 2012-09-19
JP5059025B2 (ja) 2012-10-24
TWI381532B (zh) 2013-01-01
JP2012142590A (ja) 2012-07-26
WO2007076056A2 (en) 2007-07-05
JP5704652B2 (ja) 2015-04-22
CN101366124A (zh) 2009-02-11
US20070145414A1 (en) 2007-06-28
WO2007076056A3 (en) 2007-09-20
TW200742094A (en) 2007-11-01
US7696598B2 (en) 2010-04-13
JP2009521817A (ja) 2009-06-04

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