CN101330126B - 相变化存储单元结构及其制造方法 - Google Patents
相变化存储单元结构及其制造方法 Download PDFInfo
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- CN101330126B CN101330126B CN2007101120087A CN200710112008A CN101330126B CN 101330126 B CN101330126 B CN 101330126B CN 2007101120087 A CN2007101120087 A CN 2007101120087A CN 200710112008 A CN200710112008 A CN 200710112008A CN 101330126 B CN101330126 B CN 101330126B
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CN2007101120087A CN101330126B (zh) | 2007-06-19 | 2007-06-19 | 相变化存储单元结构及其制造方法 |
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CN2007101120087A CN101330126B (zh) | 2007-06-19 | 2007-06-19 | 相变化存储单元结构及其制造方法 |
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CN101330126A CN101330126A (zh) | 2008-12-24 |
CN101330126B true CN101330126B (zh) | 2010-12-01 |
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CN2007101120087A Expired - Fee Related CN101330126B (zh) | 2007-06-19 | 2007-06-19 | 相变化存储单元结构及其制造方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI347607B (en) | 2007-11-08 | 2011-08-21 | Ind Tech Res Inst | Writing system and method for a phase change memory |
TWI402845B (zh) | 2008-12-30 | 2013-07-21 | Higgs Opl Capital Llc | 相變化記憶體陣列之驗證電路及方法 |
TWI412124B (zh) | 2008-12-31 | 2013-10-11 | Higgs Opl Capital Llc | 相變化記憶體 |
CN104425711A (zh) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的形成方法 |
CN106206938B (zh) * | 2015-06-01 | 2019-01-18 | 江苏时代全芯存储科技有限公司 | 相变化存储装置及其制造方法 |
CN105047815B (zh) * | 2015-06-11 | 2017-07-14 | 中国科学院上海微系统与信息技术研究所 | 一种含石墨烯层的相变存储器及其制备方法 |
WO2021077388A1 (zh) * | 2019-10-25 | 2021-04-29 | 江苏时代全芯存储科技股份有限公司 | 记忆体测试阵列 |
WO2021077389A1 (zh) * | 2019-10-25 | 2021-04-29 | 江苏时代全芯存储科技股份有限公司 | 记忆体元件阵列 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946673B2 (en) * | 2002-01-17 | 2005-09-20 | Stmicroelectronics S.R.L. | Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof |
CN1714405A (zh) * | 2002-12-13 | 2005-12-28 | 奥沃尼克斯股份有限公司 | 形成相变存储器 |
CN1885542A (zh) * | 2005-06-20 | 2006-12-27 | 三星电子株式会社 | 具有单元二极管和互相自对准的底电极的相变存储单元及其制造方法 |
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- 2007-06-19 CN CN2007101120087A patent/CN101330126B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946673B2 (en) * | 2002-01-17 | 2005-09-20 | Stmicroelectronics S.R.L. | Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof |
CN1714405A (zh) * | 2002-12-13 | 2005-12-28 | 奥沃尼克斯股份有限公司 | 形成相变存储器 |
CN1885542A (zh) * | 2005-06-20 | 2006-12-27 | 三星电子株式会社 | 具有单元二极管和互相自对准的底电极的相变存储单元及其制造方法 |
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