CN101317256A - 基座和包括所述基座的半导体制造装置 - Google Patents

基座和包括所述基座的半导体制造装置 Download PDF

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CN101317256A
CN101317256A CNA2007800003830A CN200780000383A CN101317256A CN 101317256 A CN101317256 A CN 101317256A CN A2007800003830 A CNA2007800003830 A CN A2007800003830A CN 200780000383 A CN200780000383 A CN 200780000383A CN 101317256 A CN101317256 A CN 101317256A
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孙孝根
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Abstract

在此提供了一种基座和包括所述基座的半导体制造装置。在基座上装载有晶片，并且所述基座包括至少一个底表面倾斜的凹穴。半导体制造装置包括：反应室；加热单元，其在反应室中产生热量；基座，其上装载有晶片，并且所述基座包括底表面倾斜的至少一个凹穴；以及旋转轴，其与所述基座耦联。

Description

基座和包括所述基座的半导体制造装置
技术领域
本实施方式涉及一种基座和包括所述基座的半导体制造装置。
背景技术
通常，半导体制造装置包括晶体生长设备，诸如有机金属化学汽相沉积(MOCVD)装置、分子束外延(MBE)装置、以及化学汽相沉积(CVD)装置。这种晶体生长设备被用于在晶片表面上生长诸如半导体发光设备、高电迁移率晶体管(HEMT)、场效应晶体管(FET)、以及激光二极管之类的元件。
真空型基座通常被用作在晶体生长设备中装载晶片的装置。
图1示意性地示出了现有技术的半导体制造装置。
参考图1和图2，半导体制造装置10包括反应室20、基座30、旋转轴50、加热器60、以及护罩70。
在反应室20中的基座30的顶表面中形成多个凹穴34，并且晶片40装载在各凹穴34上。在此，如图2B所示，凹穴34的底表面38为水平的结构。
旋转轴50与基座30的下部耦联，并且加热器60设置在基座30之下以对基座30的下部加热。反应室20上的护罩70将原料供给至反应室20。
使用半导体制造装置制造半导体的过程如下。
晶片40被装载在基座30的凹穴34上。原料经过护罩70供给至反应室20。基座30通过旋转轴50旋转。基座30和反应室20的内部由加热器60加热。此时，半导体薄膜或绝缘层通过流动的原料的化学反应而形成在晶片40的表面上。
此时，氮化铝层、氮化镓层、和氮化铟层或氮化铝镓层、氮化铝铟层、以及氮化镓铟层通过有机金属和氨之间的汽相反应而沉积于装载在基座30上的晶片40的表面上。
加热器60产生的热量以均匀的温度对基于基座30的旋转轴50的相同半径的区域进行加热，但不能以均匀的温度对不同半径的区域进行加热。因此，由于设置在基座30中心的旋转轴50在基座30的中心传送热量，因此在基座30的中心区域和外部区域之间产生温差。温度从凹穴的中心点向凹穴的内部点降低，如图9中修改之前的基座的图表所示。
从而，在装载于基座30上的晶片的表面上产生了温差。因此，沉积在晶片上的外延层的外部区域和内部区域具有不同的生长速度。因而，在一个晶片上生产的半导体发光设备中产生了发射波长的偏差，并且在一个晶片中生长的材料层的厚度随着区域而变化较大。
如上所述，在一个基座或一个晶片上生产出的半导体设备的发射波长的范围并不相同，而是变化的。
发明内容
本发明的实施方式提供了一种基座和包括所述基座的半导体制造装置，通过所述基座，可以在晶片上形成均匀厚度的薄膜。
本发明的实施方式提供了一种基座和包括所述基座的半导体制造装置，通过所述基座，可以改善半导体发光设备的光强度。
本发明的实施方式提供了一种具有倾斜凹穴的基座和包括所述基座的半导体制造装置。
技术方案
设置在反应室中的基座包括底表面倾斜的至少一个凹穴。
在其上装载有晶片的基座中，在所述基座中形成有多个凹穴，并且至少其中一个所述凹穴形成为其所述凹穴的底表面倾斜。
一种半导体制造装置包括：反应室；加热单元，其在反应室中产生热量；基座，其上装载有晶片，并且所述基座包括底表面倾斜的至少一个凹穴；以及旋转轴，其与所述基座耦联。
根据所述实施方式，在基座中设置有倾斜的凹穴，这样可以去除通过基座的旋转轴产生的晶片表面温度的偏差，以使晶片的温度均匀，从而使沉积在晶片表面上的材料层的厚度均匀。
有益效果
在根据本实施方式的基座和包括所述基座的半导体制造装置中，由于热量被均匀地传送至晶片，因此可以在晶片的表面上形成均匀的薄膜。
而且，可以减小由装载在基座上的晶片产生的半导体发光设备的电/光学特性的偏差，并可以提高各晶片的半导体设备的产量。
而且，由于晶片表面的温度偏差增大，因此可以增大半导体发光设备的光强度。
附图说明
图1是现有技术的半导体制造装置的剖视图。
图2A和图2B是常规基座的平面图以及沿常规基座的线A-A的剖视图。
图3是示出根据本发明实施方式的半导体制造装置的剖视图。
图4A和图4B是根据本发明实施方式的基座的平面图以及沿基座的线B-B的剖视图。
图5A和图5B示出了根据本发明实施方式的凹穴。
图6至图8示出了根据本发明实施方式的基座的凹穴的示例。
图9是对现有技术的基座和根据本发明的基座的不同区域的温度测量结果相互对比的图表。
图10和图11是示出了根据本发明实施方式在一个晶片上生产的元件以及相应于凹穴底表面的倾角的所述元件的发射波长特性的图表。
图12是示出了根据本发明实施方式的相应于凹穴底表面的倾角的晶片不同区域的发射波长特性的图表。
具体实施方式
本发明的实施方式将参考附图进行描述。
图3是根据本发明实施方式的半导体制造装置的剖视图。图4A和图4B是图3的基座的平面图和沿所述基座的线B-B的剖视图。图5详细示出了凹穴。
参考图3，半导体制造装置100包括反应室120、基座(或晶片载体)130、旋转轴150、诸如加热器的加热单元160、以及护罩170。
基座130设置在反应室120中，并且在基座130的顶表面中形成有至少一个凹穴140。在此，至少其中一个凹穴140的底表面是倾斜的。
晶片(未示出)装载在凹穴140上，并且旋转轴150与基座130的下部耦联以旋转基座130。加热单元160以预定的温度加热基座130的下部和反应室120的内部。护罩170将原料供给至反应室120。
原料经由护罩170供给至反应室120。反应室120中的基座130通过旋转轴150旋转。反应室120的内部和基座130由加热单元160加热。此时，半导体薄膜或绝缘层通过流动的原料的化学反应形成在晶片(未示出)的表面上。
因为基座130的凹穴140的表面倾斜，所以基座130的厚度与凹穴140的深度或其底表面的倾角成反比。因而，通过基座130传送至晶片的热量随凹穴140的底表面加深而增加，随凹穴140的底表面变浅而减小。
在此，半导体制造装置100包括诸如有机金属化学汽相沉积(MOCVD)装置、分子束外延(MBE)装置、以及化学汽相沉积(CVD)装置之类的装置。诸如氮化镓基半导体发光设备、高电迁移率晶体管(HEMT)、场效应晶体管(FET)、以及激光二极管之类的元件使用这种装置生长在晶片(未示出)的表面上。
基座130由碳或氮化铝(AlN)形成。与基座130的表面上和凹穴140中的晶片接触的表面涂布有碳化硅(SiC)层、碳层或氮化铝(AlN)层。
在此，基座130的表面涂布有碳化硅(SiC)层或氮化铝(AlN)层，从而可以防止由碳制成的基座被使用氟化氢(HF)的化学清洗或热清洗损坏，并且防止基座的特性变劣。在此，碳化硅层或氮化铝层的沉积厚度优选为
Figure A20078000038300091
至
Figure A20078000038300092
如图4A和图4B所示，至少一个凹穴140形成在基座130的顶表面132上。在附图中，形成有六个凹穴140 P1-P6，然而本发明并不仅限于上述情况。
根据晶片的尺寸或反应室的容量，可以在基座130中形成1至50个或更多的凹穴。而且，可以在基座130中形成一排或多排凹穴。
在凹穴140中，存在有平直部和圆形部。所述平直部形成在凹穴的外侧，以防止晶片旋转。凹穴的平直部可从凹穴中去除。
在下文中，为了方便起见，根据基座的中心X，凹穴140的最外端指的是外部点141，而凹穴140的最内端指的是内部点142。在凹穴中，内部点142和外部点141之间的距离d是最大的。在凹穴140中，平直部可形成在外部点141或内部点处，或形成在其它点处。
凹穴P1和凹穴P4的底表面144是倾斜的。第一凹穴P1的底表面144是形成为内部点142比外部点141深的倾斜表面。第四凹穴P4的底表面144是形成为外部点141比内部点142深的倾斜表面。
如在第四凹穴P4中那样，外部点141形成为比内部点142深。因而，由基座产生的晶片表面温度的偏差较大，并且由晶片生产的半导体发光设备的光强度得以改善。
凹穴P1和凹穴P4的倾斜底表面144影响基座130的顶表面132和基座130的底表面134之间的厚度，即，基座130的厚度相应于凹穴P1和凹穴P4的倾斜底表面144而改变。在此，在基座130下部的中心处形成有轴耦联槽135。
而且，在基座130中，凹穴P1、P2、和P3的底表面可朝向内部点142倾斜，而凹穴P4、P5、和P6的底表面可朝向外部点141倾斜。凹穴P1-P6的底表面倾斜的方向根据装载在基座130中的晶片的温度分布而变化。
参考图5A和图5B，凹穴P4的最小深度h1不小于晶片的厚度，而凹穴P4的最大深度h2根据倾角变化。
凹穴P4的内部点142是凹穴中的最小深度h1，而凹穴P4的外部点141是凹穴中的最大深度h2。在凹穴P1中，底表面144沿与底表面144在凹穴P4中的倾斜方向相反的方向倾斜。
在此，凹穴P1和凹穴P4的底表面144相对于基座的顶表面132的倾角θ1设定在0＜θ1≤-10°的范围内。此时，凹穴P1和P4中的最大深度h2不大于10mm，而最小深度h1不小于晶片的厚度。在此，凹穴P1和凹穴P4的底表面144的深度或倾角根据晶片的尺寸而改变。例如，在2英寸晶片的情况下，凹穴P1和凹穴P4的底表面44的深度形成为约3mm至约5mm的最大深度。
凹穴P4的底表面144的倾斜方向与凹穴P1的底表面144的倾斜方向相反，而凹穴P4和凹穴P1的底表面144的倾角θ1相同。
图6至图8是示出根据本发明另一实施方式的基座的剖视图。
如图6所示，凹穴P11的底表面144以从内部点142至外部点141的角度θ2相对于基座130的顶表面132倾斜。凹穴P14以从外部点141至内部点142的角度θ3相对于基座130的顶表面132倾斜。底表面的倾角θ2和θ3互不相同。
如图7所示，凹穴P21和凹穴P24具有这样一种结构，即底表面的深度朝向基座的中心X或内部点142增加。此时，凹穴P21和凹穴P24的底表面144可以相同角度或不同角度倾斜。在此，两个凹穴P21和P24可以设置为彼此相互对应。
如图8所示，凹穴P31和凹穴P34具有这样一种结构，其中底表面的深度朝向基座的外侧Y或外部点142增加。此时，两个凹穴P31和P34的底表面的倾角θ4和θ5可以彼此相同或不同。在此，两个凹穴P31和P34可以设置为彼此相互对应。
根据这种实施方式，彼此对应的凹穴的底表面朝向基座中的内部点或外部点倾斜。形成在基座中的凹穴的底表面的倾斜角度和倾斜方向可以选择性地改变。而且，可以在一个基座中同时使用水平的凹穴和倾斜的凹穴。
另一方面，如下将参考图3至图5描述包括上述基座的半导体制造装置的操作。根据本发明，为了方便起见，可以使用MOCVD装置。
晶片装载在形成于基座130顶表面中的至少一个凹穴140的倾斜的底表面上。加热单元160加热反应室120的内部和基座130的下部，并且旋转轴150以预定的速度旋转基座130。
在此，如图4B所示，旋转轴150与形成在基座130下部的轴耦联槽135耦联。
凹穴140的底表面相对于基座130的顶表面132的倾角在0°＜θ≤-10°的范围内。
原料气体或载体气体通过包括至反应室120的护罩170流至反应室120。载体气体可以包括例如三甲基铝气(trilmethyl aluminum gas)、氨气、氢或氮。
通过护罩170流入的三甲基铝气和氨气被引导至反应室120以不能相互反应。反应室的内壁温度、特别是基座上部的温度由加热单元160升高，从而装载在基座顶表面上的晶片以大约1000℃的温度加热。
三甲基铝气和氨气之间的气相反应在反应室120中发生，从而例如在晶片上有效地沉积了氮化铝。在此，沉积在晶片表面上的材料层的厚度的变化可改善至大约1.8％。
如上所述，由于晶片被装载为由各凹穴140的倾斜底表面而倾斜，因此可以减小晶片不同区域的温差。从而整个晶片被均匀地加热。而且，装载在基座130上的晶片的温度可被均匀的维持，以例如具有相对于参照温度±2℃的偏差。
因此，当将由装载在一个基座130的各凹穴140上的晶片生产的半导体发光设备相互对比时，可以产生在晶片的整个区域中具有相同发射波长范围的半导体发光设备。例如，在装载于一个凹穴上的晶片的中心区域、内部区域、外部区域中产生的半导体发光设备的发射波长范围为约455nm。
图9至图12为示出了通过上述方法由一个晶片制造的发光二极管的检验发射波长范围的结果的示例的图表。
图9示出了对凹穴的底表面修改之前(根据现有技术)和修改之后(根据本发明)的基座不同区域的温度分布。在此，晶片在凹穴中生长，凹穴的底表面的倾角在修改之前为0°，而在修改之后在内部点处为-0.1°。图中的实线示出了修改之前的基座(根据现有技术)，图中的虚线示出了修改之后的基座(根据本发明)。
因为形成在基座中的凹穴的内部点具有最大深度而使基座的厚度从外周向中心减小，因此从基座的凹穴的中心点朝向基座的凹穴的内部点的温度分布与修改之前的温度分布相比增加了ΔT。从而，根据本实施方式的基座的不同区域之间的温差与现有技术的基座的不同区域之间的温差相比降低大约3℃。
图10和图11示出了当面积为2英寸的晶片装载在根据本实施方式的基座上、材料层形成在晶片上、并对由晶片产生的半导体发光设备进行检查时获得的波长分布。图10示出了凹穴底表面的倾角在内部点处为-1°的情况。图11示出了凹穴底表面的倾角在外部点处为-2°的情况。图10和图11的纵坐标轴的计数表示测量的半导体发光设备的数目，图10和图11的横坐标轴表示半导体发光设备的峰值λ(nm)。
如图10和图11所示，由一个晶片产生的半导体发光设备的输出波长通常基于从452nm至458nm的单个波长分布。
图12是示出了通过以均匀的距离分割由基座产生的晶片而测量的半导体发光设备的波长特性的图表。在此，在横坐标轴中，从内部点至外部点由2、4、6和8以均匀的距离标号。
在图12中，凹穴B的底表面朝向内部点倾斜-0.5°的角度，凹穴C的底表面朝向内部点倾斜-1°的角度，凹穴D的底表面朝向内部点倾斜-2°的角度，而凹穴E的底表面朝向外部点倾斜-0.5°的角度。
参考图12的图表，尽管在凹穴B、C、D、E之间存在波长特性的差异，然而所产生的发光二极管的发射特性从晶片的外部区域向晶片的内部区域几乎相同。不仅发光二极管的发射波长范围而且发光二极管的操作电压——大约为3.0V——在晶片的整个区域中几乎相同。
从而，与现有技术基座的不同区域之间的温差相比，可以减小根据本实施方式的基座的不同区域之间的温差。即，减小了晶片整个表面上的温度的偏差。由于装载在基座上的晶片以均匀的温度加热，因此材料层均匀地沉积在晶片的整个区域中，从而可以防止产生具有不同发射波长范围的发光二极管。
虽然已经参考本发明的某些优选实施方式示出并描述了本发明，然而本领域的技术人员应当理解不脱离本发明所附权利要求限定的精神和范围的情况下可以进行多种形式和细节的改变。
工业实用性
一种基座和包括所述基座的半导体制造装置，由于热量被均匀地传送至晶片，因此可以在晶片的表面上形成均匀的薄膜。
而且，可以减小由装载在基座上的晶片生产的半导体发光设备的电/光学特性的偏差，并可以提高各晶片的半导体设备的产量。
而且，由于晶片表面的温度偏差增大，因此可以增大半导体发光设备的光强度。

Claims (20)

1.一种设置在反应室中的基座，其中所述基座包括至少一个凹穴，所述凹穴的底表面是倾斜的。
2.如权利要求1所述的基座，其中所述凹穴的数量为1至50。
3.如权利要求1所述的基座，其中在从所述基座的中心至所述基座外侧的至少一排中形成有多个凹穴。
4.如权利要求1所述的基座，其中所述凹穴的底表面相对于所述基座的顶表面以0°＜θ≤-10°范围内的角度倾斜。
5.如权利要求1所述的基座，其中所述凹穴的底表面的倾角根据凹穴的情况而彼此相等或彼此不同。
6.如权利要求1所述的基座，其中至少一个凹穴的底表面从所述基座的外侧向所述基座的中心倾斜，或者从所述基座的中心向所述基座的外侧倾斜。
7.如权利要求1所述的基座，其中至少一个凹穴的底表面从所述凹穴的内部点向所述凹穴的外部点倾斜，或者从所述凹穴的外部点向所述凹穴的内部点倾斜。
8.如权利要求1所述的基座，其中所述基座包括：至少一个第一凹穴，其外部点具有最大深度；和/或至少一个第二凹穴，其内部点具有最大深度。
9.如权利要求1所述的基座，其中所述凹穴的底表面相对于所述基座顶表面的深度不小于晶片的厚度并且不大于10mm。
10.如权利要求1所述的基座，其中所述基座或所述凹穴由碳或氮化铝形成，或者由碳或氮化铝涂布。
11.如权利要求10所述的基座，其中所述碳或氮化铝的沉积厚度介于
Figure A2007800003830003C1
至之间。
12.一种其上装载有晶片的基座，其中在所述基座中形成有多个凹穴，并且至少其中一个所述凹穴具有倾斜的底表面。
13.如权利要求12所述的基座，其中所述基座包括具有水平底表面的凹穴和/或具有从内部点向外部点倾斜的底表面的凹穴。
14.如权利要求1所述的基座，其中所述凹穴的底表面相对于所述基座的顶表面以0°＜θ≤-10°的范围内的角度倾斜。
15.一种半导体制造装置，包括：
反应室；
加热单元，其在所述反应室中产生热量；
基座，其上装载有晶片，并且所述基座包括底表面倾斜的至少一个凹穴；以及
旋转轴，其与所述基座耦联。
16.如权利要求15所述的半导体制造装置，其中所述倾斜的凹穴具有从所述基座的中心向所述基座的外侧倾斜的表面，或者从所述基座的外侧向所述基座的中心倾斜的表面。
17.如权利要求15所述的半导体制造装置，其中所述凹穴的底表面相对于所述基座的顶表面的倾角在0°＜θ≤-10°的范围内。
18.如权利要求15所述的半导体制造装置，其中所述倾斜的凹穴的底表面自所述基座的顶表面的深度不小于晶片的厚度并且不大于10mm。
19.如权利要求15所述的半导体制造装置，其中所述倾斜的凹穴的底表面的倾角根据凹穴的情况而彼此相等或彼此不同。
20.如权利要求15所述的半导体制造装置，其中所述反应室包括有机金属化学汽相沉积(MOCVD)装置、分子束外延(MBE)装置、以及化学汽相沉积(CVD)装置之一。
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US8323413B2 (en) 2012-12-04
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JP5001349B2 (ja) 2012-08-15

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