CN101298670B - 矩形基座的不对称接地 - Google Patents

矩形基座的不对称接地 Download PDF

Info

Publication number
CN101298670B
CN101298670B CN2008100944949A CN200810094494A CN101298670B CN 101298670 B CN101298670 B CN 101298670B CN 2008100944949 A CN2008100944949 A CN 2008100944949A CN 200810094494 A CN200810094494 A CN 200810094494A CN 101298670 B CN101298670 B CN 101298670B
Authority
CN
China
Prior art keywords
chamber
electrode
ground
periphery
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008100944949A
Other languages
English (en)
Chinese (zh)
Other versions
CN101298670A (zh
Inventor
古田学
崔寿永
崔永镇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101298670A publication Critical patent/CN101298670A/zh
Application granted granted Critical
Publication of CN101298670B publication Critical patent/CN101298670B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN2008100944949A 2007-05-03 2008-04-30 矩形基座的不对称接地 Active CN101298670B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US91583307P 2007-05-03 2007-05-03
US60/915,833 2007-05-03
US11/775,359 2007-07-10
US11/775,359 US7972470B2 (en) 2007-05-03 2007-07-10 Asymmetric grounding of rectangular susceptor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010102514389A Division CN101906621B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地

Publications (2)

Publication Number Publication Date
CN101298670A CN101298670A (zh) 2008-11-05
CN101298670B true CN101298670B (zh) 2012-02-01

Family

ID=39939727

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008100944949A Active CN101298670B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地
CN2010102514389A Active CN101906621B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2010102514389A Active CN101906621B (zh) 2007-05-03 2008-04-30 矩形基座的不对称接地

Country Status (5)

Country Link
US (2) US7972470B2 (https=)
JP (1) JP5427367B2 (https=)
KR (2) KR101011407B1 (https=)
CN (2) CN101298670B (https=)
TW (2) TWI377638B (https=)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
US8349196B2 (en) * 2007-12-06 2013-01-08 Intevac, Inc. System and method for commercial fabrication of patterned media
JP5524076B2 (ja) * 2007-12-25 2014-06-18 アプライド マテリアルズ インコーポレイテッド プラズマチャンバへｒｆ電力を結合する装置
WO2010044895A2 (en) * 2008-01-31 2010-04-22 Applied Materials, Inc Multiple phase rf power for electrode of plasma chamber
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
JP2012510727A (ja) * 2008-12-03 2012-05-10 アプライド マテリアルズ インコーポレイテッド 均一性制御のためのｒｆ帰還用ストラップの調整
KR101534024B1 (ko) * 2008-12-10 2015-07-08 주성엔지니어링(주) 기판처리장치
WO2010094002A2 (en) * 2009-02-13 2010-08-19 Applied Materials, Inc. Rf bus and rf return bus for plasma chamber electrode
US8466697B2 (en) * 2009-04-28 2013-06-18 Lam Research Corporation Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof
KR101634714B1 (ko) * 2009-05-13 2016-06-30 어플라이드 머티어리얼스, 인코포레이티드 양극산화처리된 샤워헤드
JP2010287639A (ja) * 2009-06-10 2010-12-24 Hitachi High-Technologies Corp プラズマ処理装置
US8360003B2 (en) 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
US9039864B2 (en) * 2009-09-29 2015-05-26 Applied Materials, Inc. Off-center ground return for RF-powered showerhead
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
JP5782226B2 (ja) 2010-03-24 2015-09-24 東京エレクトロン株式会社 基板処理装置
WO2011143062A2 (en) * 2010-05-12 2011-11-17 Applied Materials, Inc. Confined process volume pecvd chamber
JP5375763B2 (ja) * 2010-07-27 2013-12-25 三菱電機株式会社 プラズマ装置およびこれを用いた半導体薄膜の製造方法
CN102810770B (zh) * 2011-05-31 2015-03-04 中微半导体设备(上海)有限公司 实现等离子体刻蚀腔体与阴极之间电连接的接地器件
JP5824330B2 (ja) * 2011-11-07 2015-11-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) * 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
CN102543641B (zh) * 2012-01-20 2015-07-08 中微半导体设备(上海)有限公司 实现等离子体刻蚀腔体弹性接触的连接器件
WO2013122954A1 (en) * 2012-02-13 2013-08-22 Applied Materials, Inc. Linear pecvd apparatus
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9245720B2 (en) * 2012-06-12 2016-01-26 Lam Research Corporation Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system
CN104508180A (zh) * 2012-07-27 2015-04-08 应用材料公司 粗糙化的基板支撑件
KR102017744B1 (ko) 2012-12-12 2019-10-15 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
TW201437423A (zh) 2013-02-21 2014-10-01 應用材料股份有限公司 用於注射器至基板的空隙控制之裝置及方法
WO2014164743A1 (en) * 2013-03-11 2014-10-09 Applied Materials, Inc. High temperature process chamber lid
CN103474319B (zh) * 2013-09-12 2015-11-18 武汉新芯集成电路制造有限公司 一种减少晶圆葡萄球状缺陷的离子注入机
US20150211114A1 (en) * 2014-01-30 2015-07-30 Applied Materials, Inc. Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects
JP6233209B2 (ja) * 2014-06-30 2017-11-22 豊田合成株式会社 サセプターとその製造方法
CN104368288A (zh) * 2014-11-25 2015-02-25 三明学院 低真空低温射频感性耦合等离子体反应器及其使用方法
TW201629264A (zh) 2015-01-22 2016-08-16 應用材料股份有限公司 用於間隙偵測的智能止動器及控制機制
CN104947072B (zh) * 2015-05-14 2017-12-05 昆山龙腾光电有限公司 在基板上制作氧化硅薄膜的方法以及薄膜晶体管阵列基板的制作方法
JP6802191B2 (ja) 2015-06-05 2020-12-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ サセプタの位置付け及び回転装置、並びに使用の方法
TWI723024B (zh) 2015-06-26 2021-04-01 美商應用材料股份有限公司 用於改良的氣體分配的遞迴注入設備
KR102099382B1 (ko) * 2015-10-07 2020-04-13 주식회사 원익아이피에스 기판처리장치
US20170365449A1 (en) * 2016-06-21 2017-12-21 Applied Materials, Inc. Rf return strap shielding cover
US11217434B2 (en) * 2016-12-27 2022-01-04 Evatec Ag RF capacitive coupled dual frequency etch reactor
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
EP3588533A1 (en) * 2018-06-21 2020-01-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Plasma source and method of operating the same
CN111326387B (zh) 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
KR102700366B1 (ko) * 2019-01-29 2024-08-30 주성엔지니어링(주) 샤워헤드 및 이를 포함하는 기판처리장치
US12467139B2 (en) * 2019-03-29 2025-11-11 Applied Materials Inc. Multizone flow distribution system
CN114008755B (zh) * 2019-04-29 2024-12-20 应用材料公司 接地带组件
US11549183B2 (en) * 2019-05-24 2023-01-10 Applied Materials, Inc. Showerhead with inlet mixer
CN110289235B (zh) * 2019-07-09 2021-07-09 北京北方华创微电子装备有限公司 开盖装置和半导体加工设备
CN112447475B (zh) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 一种具有柔性电介质薄片的等离子体处理装置
JP7401279B2 (ja) 2019-12-06 2023-12-19 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
JP7413099B2 (ja) * 2020-03-16 2024-01-15 東京エレクトロン株式会社 成膜方法および成膜装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
KR20220031849A (ko) * 2020-09-04 2022-03-14 삼성디스플레이 주식회사 증착 장치
CN114203506B (zh) * 2020-09-18 2024-03-12 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其方法
CN114678247B (zh) * 2020-12-24 2025-09-09 中微半导体设备(上海)股份有限公司 一种接地环及其调节方法及等离子体处理装置
JP7458337B2 (ja) 2021-02-09 2024-03-29 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
JP7560214B2 (ja) * 2021-03-11 2024-10-02 東京エレクトロン株式会社 着火方法及びプラズマ処理装置
KR102846682B1 (ko) * 2021-04-01 2025-08-13 어플라이드 머티어리얼스, 인코포레이티드 플라즈마를 이용한 박막 형성을 위한 접지 리턴
US12378669B2 (en) 2022-01-28 2025-08-05 Applied Materials, Inc. Ground return for thin film formation using plasma
TWI817606B (zh) * 2022-07-13 2023-10-01 友威科技股份有限公司 雙電極連續式電漿製程系統
USD1080812S1 (en) 2022-08-29 2025-06-24 Applied Materials, Inc. Gas mixer
JP2024100302A (ja) * 2023-01-16 2024-07-26 キオクシア株式会社 プラズマｃｖｄ（化学気相成長）装置及び成膜方法
CN120824211A (zh) * 2024-04-09 2025-10-21 中微半导体设备(广州)有限公司 半导体处理设备及其工作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US602404A (en) * 1898-04-12 John mueller
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306670A (ja) 1995-05-09 1996-11-22 Sony Corp プラズマアッシング装置
JPH1079350A (ja) * 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6358376B1 (en) 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
WO2004040629A1 (ja) * 2002-10-29 2004-05-13 Mitsubishi Heavy Industries, Ltd. プラズマ化学蒸着装置における高周波プラズマの大面積均一化方法及び装置
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
US20070221128A1 (en) * 2006-03-23 2007-09-27 Soo Young Choi Method and apparatus for improving uniformity of large-area substrates
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US20080179011A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with wide process window employing plural vhf sources
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US20090107955A1 (en) * 2007-10-26 2009-04-30 Tiner Robin L Offset liner for chamber evacuation
KR101588566B1 (ko) * 2008-03-20 2016-01-26 어플라이드 머티어리얼스, 인코포레이티드 롤-성형 표면을 갖는 서셉터 및 이를 제조하기 위한 방법
JP5683469B2 (ja) * 2008-10-09 2015-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大型プラズマ処理チャンバのｒｆ復路
CN102308675B (zh) * 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
KR102011535B1 (ko) * 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US602404A (en) * 1898-04-12 John mueller
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor

Also Published As

Publication number Publication date
TWI376763B (en) 2012-11-11
KR101011407B1 (ko) 2011-01-28
TW200910497A (en) 2009-03-01
TWI377638B (en) 2012-11-21
KR20080097957A (ko) 2008-11-06
CN101906621A (zh) 2010-12-08
JP5427367B2 (ja) 2014-02-26
KR20100090675A (ko) 2010-08-16
KR101274659B1 (ko) 2013-06-17
US8877301B2 (en) 2014-11-04
CN101906621B (zh) 2012-10-31
US20080274297A1 (en) 2008-11-06
US7972470B2 (en) 2011-07-05
JP2008274437A (ja) 2008-11-13
TW201042724A (en) 2010-12-01
US20110236599A1 (en) 2011-09-29
CN101298670A (zh) 2008-11-05

Similar Documents

Publication Publication Date Title
CN101298670B (zh) 矩形基座的不对称接地
US10373809B2 (en) Grooved backing plate for standing wave compensation
TWI553146B (zh) 使用微波電漿之薄膜沉積
US8074599B2 (en) Plasma uniformity control by gas diffuser curvature
US8381677B2 (en) Prevention of film deposition on PECVD process chamber wall
US20090197015A1 (en) Method and apparatus for controlling plasma uniformity
US20100189921A1 (en) Plasma generating method, plasma generating apparatus, and plasma processing apparatus
US20080268173A1 (en) Pecvd process chamber backing plate reinforcement
CN101018886A (zh) 通过气体分散器的等离子体均匀度控制
TW202312221A (zh) 混合電漿源陣列
US20230059495A1 (en) Optimization of Radiofrequency Signal Ground Return in Plasma Processing System
US20070144672A1 (en) Plasma producing method and apparatus as well as plasma processing apparatus
TWI890674B (zh) 接地帶組件
EP1789605A2 (en) Plasma uniformity control by gas diffuser curvature
CN101855707B (zh) 等离子处理装置
WO2008079742A2 (en) Prevention of film deposition on pecvd process chamber wall
JP2001003174A (ja) 薄膜の形成方法及び誘導結合型プラズマｃｖｄ装置
CN211088238U (zh) 基板处理系统
CN117355920A (zh) 用于使用等离子体形成薄膜的接地返回
KR20180040318A (ko) 기판지지유닛 및 이를 포함하는 기판처리장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: American California

Patentee after: Applied Materials Inc.

Address before: American California

Patentee before: Applied Materials Inc.