CN101286487B - 半导体装置、led头以及图像形成装置 - Google Patents

半导体装置、led头以及图像形成装置 Download PDF

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Publication number
CN101286487B
CN101286487B CN200810092464.4A CN200810092464A CN101286487B CN 101286487 B CN101286487 B CN 101286487B CN 200810092464 A CN200810092464 A CN 200810092464A CN 101286487 B CN101286487 B CN 101286487B
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layer
substrate
diamond
semiconductor
led
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Expired - Fee Related
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CN101286487A (zh
Inventor
荻原光彦
鹭森友彦
铃木贵人
藤原博之
猪狩友希
佐久田昌明
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Oki Electric Industry Co Ltd
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Oki Data Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN200810092464.4A 2007-04-13 2008-04-11 半导体装置、led头以及图像形成装置 Expired - Fee Related CN101286487B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007105971A JP2008263126A (ja) 2007-04-13 2007-04-13 半導体装置、該半導体装置の製造方法、ｌｅｄヘッド、及び画像形成装置
JP2007-105971 2007-04-13

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CN101286487A CN101286487A (zh) 2008-10-15
CN101286487B true CN101286487B (zh) 2012-08-08

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US (1) US20080251798A1 (enExample)
EP (1) EP1981094A3 (enExample)
JP (1) JP2008263126A (enExample)
CN (1) CN101286487B (enExample)

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JP5070247B2 (ja) * 2009-06-23 2012-11-07 株式会社沖データ 半導体装置の製造方法、及び半導体装置
JP4871378B2 (ja) * 2009-08-24 2012-02-08 株式会社沖データ 半導体発光素子アレイ装置、画像露光装置、画像形成装置、及び画像表示装置
JP5330953B2 (ja) * 2009-10-01 2013-10-30 株式会社沖データ 発光装置
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US8778784B2 (en) 2010-09-21 2014-07-15 Ritedia Corporation Stress regulated semiconductor devices and associated methods
CN101964385B (zh) * 2010-10-28 2012-08-29 映瑞光电科技(上海)有限公司 发光二极管及其形成方法
WO2012058656A2 (en) * 2010-10-29 2012-05-03 Ritedia Corporation Stress regulated semiconductor and associated methods
TWI473299B (zh) * 2011-12-15 2015-02-11 Ritedia Corp 覆晶式發光二極體及其製法與應用
GB2514305B (en) * 2012-02-28 2017-10-11 Aker Solutions As DLC-coated gate valve in petroleum production or water injection
CN105633234A (zh) * 2012-03-15 2016-06-01 安徽三安光电有限公司 氮化镓基半导体生长衬底及其制作方法
TWI466328B (zh) * 2012-06-11 2014-12-21 Ritedia Corp 覆晶式發光二極體及其製法與應用
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
TWI520378B (zh) * 2012-10-22 2016-02-01 錸鑽科技股份有限公司 覆晶式發光二極體及其應用
TWI455665B (zh) * 2012-11-05 2014-10-01 錸鑽科技股份有限公司 覆晶式發光二極體封裝模組及其製法
CN102983124B (zh) * 2012-11-14 2015-06-10 深圳大学 具有散热装置的led光源
KR102139681B1 (ko) 2014-01-29 2020-07-30 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 발광소자 어레이 모듈 및 발광소자 어레이 칩들을 제어하는 방법
CN110741460A (zh) * 2017-05-10 2020-01-31 沙恩·汤马斯·麦克马洪 薄膜结晶工艺
TWI633645B (zh) * 2017-08-04 2018-08-21 鼎展電子股份有限公司 可撓性led元件與可撓性led顯示面板
TWI642047B (zh) * 2018-01-26 2018-11-21 鼎展電子股份有限公司 可撓性微發光二極體顯示模組
WO2020004567A1 (ja) * 2018-06-27 2020-01-02 京セラ株式会社 電子素子搭載用基板、電子装置および電子モジュール
JP7615047B2 (ja) * 2019-11-20 2025-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法

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Publication number Publication date
CN101286487A (zh) 2008-10-15
EP1981094A2 (en) 2008-10-15
EP1981094A3 (en) 2015-06-03
US20080251798A1 (en) 2008-10-16
JP2008263126A (ja) 2008-10-30

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