CN101248529B - 具有侧栅控和顶栅控读出晶体管的双端口增益单元 - Google Patents

具有侧栅控和顶栅控读出晶体管的双端口增益单元 Download PDF

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Publication number
CN101248529B
CN101248529B CN2006800307121A CN200680030712A CN101248529B CN 101248529 B CN101248529 B CN 101248529B CN 2006800307121 A CN2006800307121 A CN 2006800307121A CN 200680030712 A CN200680030712 A CN 200680030712A CN 101248529 B CN101248529 B CN 101248529B
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China
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gate
word line
layer
oxide
forming
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CN2006800307121A
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Chinese (zh)
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CN101248529A (zh
Inventor
J·曼德尔曼
程慷果
R·迪瓦卡鲁尼
C·拉登斯
王耕
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
CN2006800307121A 2005-08-24 2006-06-27 具有侧栅控和顶栅控读出晶体管的双端口增益单元 Active CN101248529B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/161,962 2005-08-24
US11/161,962 US7459743B2 (en) 2005-08-24 2005-08-24 Dual port gain cell with side and top gated read transistor
PCT/EP2006/063581 WO2007023011A2 (en) 2005-08-24 2006-06-27 Dual port gain cell with side and top gated read transistor

Publications (2)

Publication Number Publication Date
CN101248529A CN101248529A (zh) 2008-08-20
CN101248529B true CN101248529B (zh) 2010-05-19

Family

ID=37771966

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800307121A Active CN101248529B (zh) 2005-08-24 2006-06-27 具有侧栅控和顶栅控读出晶体管的双端口增益单元

Country Status (7)

Country Link
US (2) US7459743B2 (enExample)
EP (1) EP1938378B1 (enExample)
JP (1) JP5102767B2 (enExample)
KR (1) KR101013302B1 (enExample)
CN (1) CN101248529B (enExample)
TW (1) TWI413983B (enExample)
WO (1) WO2007023011A2 (enExample)

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US8283441B2 (en) 2006-10-31 2012-10-09 University Of Toledo Na+K+-ATPase-specific peptide inhibitors/activators of SRC and SRC family kinases
JP4524699B2 (ja) * 2007-10-17 2010-08-18 ソニー株式会社 表示装置
US20120302630A1 (en) 2009-09-16 2012-11-29 Chinese Academy Of Medical Sciences Na/K-ATPase Ligands, Ouabain Antagonists, Assays and Uses Thereof
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2012DN05057A (enExample) * 2009-12-28 2015-10-09 Semiconductor Energy Lab
WO2011088210A1 (en) 2010-01-13 2011-07-21 The University Of Toledo Materials and methods related to sodium/potassium adenosine triphosphatase and src
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8792284B2 (en) * 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8743590B2 (en) * 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US9111634B2 (en) 2012-07-13 2015-08-18 Freescale Semiconductor, Inc. Methods and structures for multiport memory devices
KR20140092537A (ko) 2013-01-16 2014-07-24 삼성전자주식회사 메모리 셀 및 이를 포함하는 메모리 장치
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
WO2015047233A1 (en) * 2013-09-25 2015-04-02 Intel Corporation Methods of forming buried vertical capacitors and structures formed thereby
KR102168652B1 (ko) 2013-12-16 2020-10-23 삼성전자주식회사 감지 증폭기, 그것을 포함하는 반도체 메모리 장치 및 그것의 읽기 방법
WO2017111798A1 (en) * 2015-12-23 2017-06-29 Intel Corporation High retention time memory element with dual gate devices
CN110291585B (zh) * 2017-03-22 2024-07-05 英特尔公司 采用自对准的顶栅薄膜晶体管的嵌入式存储器
US11222690B2 (en) * 2018-12-26 2022-01-11 Micron Technology, Inc. Vertical 3D single word line gain cell with shared read/write bit line
WO2024060021A1 (zh) * 2022-09-20 2024-03-28 华为技术有限公司 一种三维存储阵列、存储器及电子设备
CN118678660A (zh) * 2023-03-17 2024-09-20 华为技术有限公司 三维存储阵列、存储器及电子设备

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US4763181A (en) * 1986-12-08 1988-08-09 Motorola, Inc. High density non-charge-sensing DRAM cell
US5220530A (en) * 1990-08-07 1993-06-15 Oki Electric Industry Co., Ltd. Semiconductor memory element and method of fabricating the same
US5675160A (en) * 1995-03-15 1997-10-07 Nec Corporation Semiconductor memory device having an internal amplification function
CN1202012A (zh) * 1997-06-11 1998-12-16 西门子公司 纵向晶体管
CN1222767A (zh) * 1997-11-28 1999-07-14 西门子公司 存储单元装置及其制作方法
CN1457101A (zh) * 2002-05-08 2003-11-19 因芬尼昂技术股份公司 动态记忆胞元

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JPS6370557A (ja) * 1986-09-12 1988-03-30 Nec Corp 半導体メモリセル
JPH01307256A (ja) * 1988-06-06 1989-12-12 Hitachi Ltd 半導体記憶装置
JP3227917B2 (ja) 1993-07-26 2001-11-12 ソニー株式会社 増幅型ｄｒａｍ用メモリセルおよびその製造方法
EP0766312B1 (de) * 1995-09-26 2002-01-16 Infineon Technologies AG Selbstverstärkende DRAM-Speicherzellenanordnung
US5732014A (en) 1997-02-20 1998-03-24 Micron Technology, Inc. Merged transistor structure for gain memory cell
JP2001093988A (ja) * 1999-07-22 2001-04-06 Sony Corp 半導体記憶装置
JP2001230329A (ja) 2000-02-16 2001-08-24 Sony Corp 半導体記憶装置
JP2002118240A (ja) * 2000-10-05 2002-04-19 Toshiba Corp 半導体記憶装置および半導体記憶装置の製造方法
US6750097B2 (en) * 2002-07-30 2004-06-15 International Business Machines Corporation Method of fabricating a patterened SOI embedded DRAM/eDRAM having a vertical device cell and device formed thereby
DE10248722A1 (de) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell
US6964897B2 (en) * 2003-06-09 2005-11-15 International Business Machines Corporation SOI trench capacitor cell incorporating a low-leakage floating body array transistor
US7232719B2 (en) * 2005-03-28 2007-06-19 Promos Technologies Inc. Memories having a charge storage node at least partially located in a trench in a semiconductor substrate and electrically coupled to a source/drain region formed in the substrate
US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof

Patent Citations (6)

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US4763181A (en) * 1986-12-08 1988-08-09 Motorola, Inc. High density non-charge-sensing DRAM cell
US5220530A (en) * 1990-08-07 1993-06-15 Oki Electric Industry Co., Ltd. Semiconductor memory element and method of fabricating the same
US5675160A (en) * 1995-03-15 1997-10-07 Nec Corporation Semiconductor memory device having an internal amplification function
CN1202012A (zh) * 1997-06-11 1998-12-16 西门子公司 纵向晶体管
CN1222767A (zh) * 1997-11-28 1999-07-14 西门子公司 存储单元装置及其制作方法
CN1457101A (zh) * 2002-05-08 2003-11-19 因芬尼昂技术股份公司 动态记忆胞元

Non-Patent Citations (1)

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JP特开2001-230329A 2001.08.24

Also Published As

Publication number Publication date
US7459743B2 (en) 2008-12-02
KR101013302B1 (ko) 2011-02-09
US20090047756A1 (en) 2009-02-19
JP5102767B2 (ja) 2012-12-19
TWI413983B (zh) 2013-11-01
EP1938378B1 (en) 2013-03-20
WO2007023011A2 (en) 2007-03-01
WO2007023011A3 (en) 2007-06-21
JP2009506526A (ja) 2009-02-12
US20070047293A1 (en) 2007-03-01
CN101248529A (zh) 2008-08-20
US7790530B2 (en) 2010-09-07
EP1938378A2 (en) 2008-07-02
KR20080036202A (ko) 2008-04-25
TW200725617A (en) 2007-07-01
WO2007023011B1 (en) 2007-07-12

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Effective date of registration: 20171121

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Patentee before: Core USA second LLC

Effective date of registration: 20171121

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Patentee before: International Business Machines Corp.