CN101248514B - 硅表面制备 - Google Patents

硅表面制备 Download PDF

Info

Publication number
CN101248514B
CN101248514B CN2006800304424A CN200680030442A CN101248514B CN 101248514 B CN101248514 B CN 101248514B CN 2006800304424 A CN2006800304424 A CN 2006800304424A CN 200680030442 A CN200680030442 A CN 200680030442A CN 101248514 B CN101248514 B CN 101248514B
Authority
CN
China
Prior art keywords
hydrogen
described method
silicon face
cleaning
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2006800304424A
Other languages
English (en)
Chinese (zh)
Other versions
CN101248514A (zh
Inventor
R·H·小帕格里罗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM IP Holding BV
Original Assignee
ASM Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Inc filed Critical ASM Inc
Publication of CN101248514A publication Critical patent/CN101248514A/zh
Application granted granted Critical
Publication of CN101248514B publication Critical patent/CN101248514B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Battery Electrode And Active Subsutance (AREA)
CN2006800304424A 2005-08-23 2006-08-14 硅表面制备 Active CN101248514B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/210,441 2005-08-23
US11/210,441 US7479460B2 (en) 2005-08-23 2005-08-23 Silicon surface preparation
PCT/US2006/031437 WO2007024515A1 (en) 2005-08-23 2006-08-14 Silicon surface preparation

Publications (2)

Publication Number Publication Date
CN101248514A CN101248514A (zh) 2008-08-20
CN101248514B true CN101248514B (zh) 2010-09-22

Family

ID=37307107

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800304424A Active CN101248514B (zh) 2005-08-23 2006-08-14 硅表面制备

Country Status (7)

Country Link
US (2) US7479460B2 (enExample)
EP (1) EP1917677A1 (enExample)
JP (1) JP4951625B2 (enExample)
KR (1) KR101431615B1 (enExample)
CN (1) CN101248514B (enExample)
TW (1) TWI417949B (enExample)
WO (1) WO2007024515A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102530842A (zh) * 2012-01-18 2012-07-04 广西大学 局部阳极氧化制备纳米织构的方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
JP2009545136A (ja) * 2006-07-21 2009-12-17 インテグリス・インコーポレーテッド 浸漬流体を調整するための装置および方法
JP4753841B2 (ja) * 2006-11-10 2011-08-24 株式会社日立国際電気 半導体デバイスの製造方法
DE102006053890A1 (de) * 2006-11-14 2008-05-21 Eads Deutschland Gmbh Kampfstoff-Detektor zur Detektion chemischer Kampfstoffe, Herstellungsverfahren und Verwendung eines Substrats als Kampfstoff-Detektor
EP2077576A1 (en) * 2008-01-04 2009-07-08 S.O.I.Tec Silicon on Insulator Technologies Process for preparing cleaned substrates suitable for epitaxial growth
JP5152851B2 (ja) * 2008-04-17 2013-02-27 国立大学法人東北大学 半導体装置の製造方法
JP5549274B2 (ja) * 2010-02-25 2014-07-16 栗田工業株式会社 水質評価方法及び装置
CN101834130A (zh) * 2010-03-31 2010-09-15 上海集成电路研发中心有限公司 一种硅片的湿法处理方法
US20120009690A1 (en) * 2010-07-12 2012-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ spectrometry
KR20130105308A (ko) * 2010-08-25 2013-09-25 린데 악티엔게젤샤프트 불소 분자의 동일반응계내 활성화를 이용한 증착 챔버 세정 방법
CN102097293B (zh) * 2010-11-19 2014-03-12 嘉盛半导体(苏州)有限公司 半导体封装产品的清洗机台及清洗工艺
US9276153B2 (en) * 2011-01-26 2016-03-01 Sumco Corporation Solar cell wafer and method of producing the same
KR102792804B1 (ko) * 2018-11-19 2025-04-14 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 표시 장치의 제조 방법
KR20200111868A (ko) * 2019-03-19 2020-10-05 삼성디스플레이 주식회사 다결정 실리콘층을 포함하는 표시 장치, 다결정 실리콘층의 제조 방법, 및 표시 장치의 제조 방법
CN112058793B (zh) * 2020-08-07 2022-05-20 万津实业(赤壁)有限公司 光学玻璃清洗设备及清洗方法
US11798802B2 (en) * 2022-02-11 2023-10-24 Globalwafers Co., Ltd. Methods for stripping and cleaning semiconductor structures

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0936268A2 (en) * 1998-01-16 1999-08-18 Kurita Water Industries Ltd. Cleaning solution for electromaterials and method for using the same
US6348157B1 (en) * 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
US6416586B1 (en) * 1998-12-01 2002-07-09 Tadahiro Ohmi Cleaning method
CN1432531A (zh) * 2002-01-15 2003-07-30 奥璐佳瑙株式会社 溶氢水制造设备

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039176A (ja) 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4911761A (en) 1984-05-21 1990-03-27 Cfm Technologies Research Associates Process and apparatus for drying surfaces
US4856544A (en) 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
US4885056A (en) 1988-09-02 1989-12-05 Motorola Inc. Method of reducing defects on semiconductor wafers
US5022961B1 (en) 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
DE4002327A1 (de) 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
JP2581268B2 (ja) 1990-05-22 1997-02-12 日本電気株式会社 半導体基板の処理方法
JPH0793270B2 (ja) 1991-02-15 1995-10-09 株式会社半導体プロセス研究所 半導体製造装置及びその使用方法
JP3154814B2 (ja) 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
US5308400A (en) 1992-09-02 1994-05-03 United Microelectronics Corporation Room temperature wafer cleaning process
US5464480A (en) 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
JP3338134B2 (ja) 1993-08-02 2002-10-28 株式会社東芝 半導体ウエハ処理方法
JP3436776B2 (ja) 1993-08-09 2003-08-18 忠弘 大見 ウエハ洗浄装置及び洗浄方法
JP2586304B2 (ja) 1993-09-21 1997-02-26 日本電気株式会社 半導体基板の洗浄液および洗浄方法
US5656097A (en) 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5950645A (en) 1993-10-20 1999-09-14 Verteq, Inc. Semiconductor wafer cleaning system
JP3330218B2 (ja) 1994-03-25 2002-09-30 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
JP2760418B2 (ja) 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
JP2914555B2 (ja) 1994-08-30 1999-07-05 信越半導体株式会社 半導体シリコンウェーハの洗浄方法
JPH08195369A (ja) * 1995-01-13 1996-07-30 Daikin Ind Ltd 基板の洗浄方法
JPH08264500A (ja) 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
JP3649771B2 (ja) 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
JPH09115869A (ja) 1995-08-10 1997-05-02 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US5681397A (en) 1995-09-12 1997-10-28 Micron Technology, Inc. Methods for high temperature water rinsing and drying of silicon wafers after being cleaned in hydrofluoric acid
US5601656A (en) 1995-09-20 1997-02-11 Micron Technology, Inc. Methods for cleaning silicon wafers with an aqueous solution of hydrofluoric acid and hydriodic acid
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
KR100189779B1 (ko) * 1995-12-04 1999-06-01 윤종용 웨이퍼의 건조장치
TW418444B (en) 1996-12-16 2001-01-11 Shinetsu Handotai Kk The surface treatment method of silicon single crystal and the manufacture method of the silicon single crystal thin film
KR100234541B1 (ko) * 1997-03-07 1999-12-15 윤종용 반도체장치 제조용 웨이퍼의 세정을 위한 세정조성물 및 그를 이용한 세정방법
JP4208056B2 (ja) * 1997-06-13 2009-01-14 忠弘 大見 洗浄方法
JPH11233476A (ja) 1997-12-01 1999-08-27 Mitsubishi Electric Corp 半導体基板の処理方法
US6319331B1 (en) 1997-12-01 2001-11-20 Mitsubishi Denki Kabushiki Kaisha Method for processing semiconductor substrate
US5837662A (en) 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
US5932022A (en) 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
JP4088810B2 (ja) * 1998-09-01 2008-05-21 リアライズ・アドバンストテクノロジ株式会社 基板洗浄装置及び基板洗浄方法
JP2000228387A (ja) 1998-12-01 2000-08-15 Tadahiro Omi ウエット洗浄装置
US6106634A (en) 1999-02-11 2000-08-22 Applied Materials, Inc. Methods and apparatus for reducing particle contamination during wafer transport
US6332981B1 (en) * 1999-12-16 2001-12-25 Walter Thomas Loyd Ultra violet liquid purification system
EP1327257A1 (en) * 2000-10-05 2003-07-16 Koninklijke Philips Electronics N.V. Method of cleaning an electronic device
JP2002329701A (ja) * 2001-02-28 2002-11-15 Matsushita Electric Ind Co Ltd 半導体基板およびそれを用いた表示装置およびその製造方法および製造装置
US6620743B2 (en) * 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
AU2002305733A1 (en) 2001-05-30 2002-12-09 Asm America, Inc Low temperature load and bake
JP3980296B2 (ja) 2001-06-25 2007-09-26 株式会社カイジョー 洗浄物の乾燥方法及び乾燥装置
US6726848B2 (en) * 2001-12-07 2004-04-27 Scp Global Technologies, Inc. Apparatus and method for single substrate processing
JP4076365B2 (ja) * 2002-04-09 2008-04-16 シャープ株式会社 半導体洗浄装置
US20030192577A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Method and apparatus for wafer cleaning
JP4554146B2 (ja) * 2002-09-24 2010-09-29 忠弘 大見 回転式シリコンウエハ洗浄装置
EP1427003A3 (en) 2002-12-02 2005-03-02 OHMI, Tadahiro Semiconductor device and method of manufacturing the same
JP4351497B2 (ja) * 2003-07-31 2009-10-28 財団法人国際科学振興財団 半導体装置の製造方法、及び半導体製造装置
TW200411726A (en) * 2002-12-31 2004-07-01 Au Optronics Corp Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method
US7479460B2 (en) 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348157B1 (en) * 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
EP0936268A2 (en) * 1998-01-16 1999-08-18 Kurita Water Industries Ltd. Cleaning solution for electromaterials and method for using the same
US6416586B1 (en) * 1998-12-01 2002-07-09 Tadahiro Ohmi Cleaning method
CN1432531A (zh) * 2002-01-15 2003-07-30 奥璐佳瑙株式会社 溶氢水制造设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2003-7671A 2003.01.10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102530842A (zh) * 2012-01-18 2012-07-04 广西大学 局部阳极氧化制备纳米织构的方法

Also Published As

Publication number Publication date
JP4951625B2 (ja) 2012-06-13
US20070049056A1 (en) 2007-03-01
TWI417949B (zh) 2013-12-01
EP1917677A1 (en) 2008-05-07
KR20080058348A (ko) 2008-06-25
US8765606B2 (en) 2014-07-01
US7479460B2 (en) 2009-01-20
TW200721282A (en) 2007-06-01
JP2009506538A (ja) 2009-02-12
KR101431615B1 (ko) 2014-08-19
CN101248514A (zh) 2008-08-20
US20090042400A1 (en) 2009-02-12
WO2007024515A1 (en) 2007-03-01

Similar Documents

Publication Publication Date Title
US8765606B2 (en) Silicon surface preparation
US6274059B1 (en) Method to remove metals in a scrubber
JP3409849B2 (ja) 電子部品部材類洗浄用洗浄液の製造装置
JP3185753B2 (ja) 半導体装置の製造方法
JP2760418B2 (ja) 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
JP2009543344A (ja) 液体メニスカスによるポストエッチウエハ表面洗浄
JP3296405B2 (ja) 電子部品部材類の洗浄方法及び洗浄装置
US6620743B2 (en) Stable, oxide-free silicon surface preparation
CN101405835A (zh) 清洁半导体晶片的方法
JP2000228387A (ja) ウエット洗浄装置
CN104335330B (zh) 半导体晶片的洗净方法
JP2006073747A (ja) 半導体ウェーハの処理方法およびその装置
JP2007073806A (ja) シリコンウエハの洗浄方法
JP3595681B2 (ja) エピタキシャルウェーハの製造方法
JPH07335608A (ja) 金属不純物除去方法およびその装置
JPH0919661A (ja) 電子部品等の洗浄方法及び装置
JPH11265867A (ja) 基板処理方法および基板処理装置
JP4306217B2 (ja) 洗浄後の半導体基板の乾燥方法
JP4357456B2 (ja) 半導体基板の洗浄方法
JP2006016460A (ja) Ｓｉを含有する基板の洗浄溶液及びＳｉを含有する基板の洗浄方法
TWI506690B (zh) Silicon wafer manufacturing method
JPH04274324A (ja) ウェーハの表面洗浄方法
JPH05343380A (ja) 半導体基板の洗浄方法
JPH10174854A (ja) ガス溶解装置
JP2002367949A (ja) シリコンウェハの洗浄方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210409

Address after: Holland Almere

Patentee after: ASM IP Holding B.V.

Address before: Arizona, USA

Patentee before: ASM AMERICA, Inc.