CN101246890B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101246890B CN101246890B CN2008100056444A CN200810005644A CN101246890B CN 101246890 B CN101246890 B CN 101246890B CN 2008100056444 A CN2008100056444 A CN 2008100056444A CN 200810005644 A CN200810005644 A CN 200810005644A CN 101246890 B CN101246890 B CN 101246890B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000011229 interlayer Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000011800 void material Substances 0.000 claims description 158
- 230000003647 oxidation Effects 0.000 claims description 35
- 238000007254 oxidation reaction Methods 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract description 56
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 16
- 239000001257 hydrogen Substances 0.000 abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 16
- 239000003990 capacitor Substances 0.000 abstract 5
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 65
- 239000010936 titanium Substances 0.000 description 34
- 238000000137 annealing Methods 0.000 description 31
- 238000005530 etching Methods 0.000 description 26
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 229910016570 AlCu Inorganic materials 0.000 description 13
- 238000011049 filling Methods 0.000 description 11
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000011084 recovery Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 108010063955 thrombin receptor peptide (42-47) Proteins 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-034219 | 2007-02-15 | ||
JP2007034219 | 2007-02-15 | ||
JP2007034219A JP2008198885A (ja) | 2007-02-15 | 2007-02-15 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101246890A CN101246890A (zh) | 2008-08-20 |
CN101246890B true CN101246890B (zh) | 2013-03-20 |
Family
ID=39705885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100056444A Expired - Fee Related CN101246890B (zh) | 2007-02-15 | 2008-02-14 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8324671B2 (zh) |
JP (1) | JP2008198885A (zh) |
KR (1) | KR100960283B1 (zh) |
CN (1) | CN101246890B (zh) |
TW (1) | TWI459540B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4845937B2 (ja) * | 2008-07-24 | 2011-12-28 | 株式会社東芝 | スピンmosfetおよびこのスピンmosfetを用いたリコンフィギュラブル論理回路 |
JP5343439B2 (ja) | 2008-07-31 | 2013-11-13 | アイコム株式会社 | フレーム同期検出回路およびそれを用いるfsk受信機 |
US9536822B2 (en) * | 2008-10-13 | 2017-01-03 | Texas Instruments Incorporated | Drawn dummy FeCAP, via and metal structures |
KR101108158B1 (ko) * | 2009-11-30 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 및 그 제조 방법 |
KR20110077451A (ko) * | 2009-12-30 | 2011-07-07 | 삼성전자주식회사 | 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치 |
JP5579136B2 (ja) * | 2011-08-17 | 2014-08-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
US8980723B2 (en) * | 2012-06-15 | 2015-03-17 | Texas Instruments Incorporated | Multiple depth vias in an integrated circuit |
KR102451725B1 (ko) * | 2017-12-20 | 2022-10-07 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6642564B2 (en) * | 2001-07-18 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory and method for fabricating the same |
JP2004047943A (ja) * | 2002-03-20 | 2004-02-12 | Fujitsu Ltd | 半導体装置 |
JP4316358B2 (ja) * | 2003-11-27 | 2009-08-19 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP4659355B2 (ja) | 2003-12-11 | 2011-03-30 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
CN100505265C (zh) * | 2003-12-26 | 2009-06-24 | 富士通微电子株式会社 | 半导体装置、半导体装置的制造方法 |
JP4308691B2 (ja) | 2004-03-19 | 2009-08-05 | 富士通マイクロエレクトロニクス株式会社 | 半導体基板および半導体基板の製造方法 |
CN1926686B (zh) * | 2004-05-28 | 2010-08-18 | 富士通微电子株式会社 | 半导体装置及其制造方法 |
JP4803995B2 (ja) * | 2004-06-28 | 2011-10-26 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP4371005B2 (ja) * | 2004-08-12 | 2009-11-25 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体装置 |
JP4785030B2 (ja) | 2005-01-18 | 2011-10-05 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
CN101194362B (zh) | 2005-06-13 | 2011-11-16 | 富士通半导体股份有限公司 | 半导体器件 |
CN101313401B (zh) * | 2005-11-25 | 2012-05-09 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
JP2008053264A (ja) * | 2006-08-22 | 2008-03-06 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7615459B1 (en) * | 2008-08-12 | 2009-11-10 | Sharp Kabushiki Kaisha | Manufacturing method for variable resistive element |
-
2007
- 2007-02-15 JP JP2007034219A patent/JP2008198885A/ja active Pending
-
2008
- 2008-01-25 TW TW097102843A patent/TWI459540B/zh not_active IP Right Cessation
- 2008-02-11 KR KR1020080012187A patent/KR100960283B1/ko active IP Right Grant
- 2008-02-13 US US12/068,912 patent/US8324671B2/en active Active
- 2008-02-14 CN CN2008100056444A patent/CN101246890B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20080076750A (ko) | 2008-08-20 |
KR100960283B1 (ko) | 2010-06-07 |
CN101246890A (zh) | 2008-08-20 |
TWI459540B (zh) | 2014-11-01 |
US8324671B2 (en) | 2012-12-04 |
JP2008198885A (ja) | 2008-08-28 |
TW200847402A (en) | 2008-12-01 |
US20080197391A1 (en) | 2008-08-21 |
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ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
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Effective date of registration: 20200730 Address after: Kanagawa Prefecture, Japan Patentee after: Fujitsu semiconductor storage solutions Co.,Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: FUJITSU MICROELECTRONICS Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20130320 |