CN101221628B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN101221628B CN101221628B CN2007103054060A CN200710305406A CN101221628B CN 101221628 B CN101221628 B CN 101221628B CN 2007103054060 A CN2007103054060 A CN 2007103054060A CN 200710305406 A CN200710305406 A CN 200710305406A CN 101221628 B CN101221628 B CN 101221628B
- Authority
- CN
- China
- Prior art keywords
- circuit
- change
- over circuit
- voltage
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 203
- 238000007600 charging Methods 0.000 claims description 120
- 238000012360 testing method Methods 0.000 claims description 80
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 346
- 239000010410 layer Substances 0.000 description 86
- 239000000758 substrate Substances 0.000 description 77
- 238000000034 method Methods 0.000 description 47
- 239000000463 material Substances 0.000 description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 39
- 239000012535 impurity Substances 0.000 description 39
- 239000010409 thin film Substances 0.000 description 28
- 239000010936 titanium Substances 0.000 description 27
- 239000004411 aluminium Substances 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 239000010949 copper Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- 239000003814 drug Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 229910052750 molybdenum Inorganic materials 0.000 description 17
- 239000011733 molybdenum Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 229910052759 nickel Inorganic materials 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052719 titanium Inorganic materials 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 16
- 239000010937 tungsten Substances 0.000 description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 15
- 238000004891 communication Methods 0.000 description 15
- 239000004615 ingredient Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 13
- 239000000956 alloy Substances 0.000 description 12
- 239000002216 antistatic agent Substances 0.000 description 12
- 238000013459 approach Methods 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- 229910052715 tantalum Inorganic materials 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 239000012467 final product Substances 0.000 description 10
- 239000007773 negative electrode material Substances 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000007774 positive electrode material Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000007784 solid electrolyte Substances 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 5
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 5
- 230000000452 restraining effect Effects 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 230000002052 anaphylactic effect Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000123 paper Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 206010020751 Hypersensitivity Diseases 0.000 description 2
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 2
- 229910015645 LiMn Inorganic materials 0.000 description 2
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 208000030961 allergic reaction Diseases 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910001386 lithium phosphate Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910018095 Ni-MH Inorganic materials 0.000 description 1
- 229910018477 Ni—MH Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010277 constant-current charging Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/005—Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/001—Energy harvesting or scavenging
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
- H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J2207/20—Charging or discharging characterised by the power electronics converter
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Power Engineering (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electronic Switches (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006349381 | 2006-12-26 | ||
| JP2006349381 | 2006-12-26 | ||
| JP2006-349381 | 2006-12-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101221628A CN101221628A (zh) | 2008-07-16 |
| CN101221628B true CN101221628B (zh) | 2012-10-10 |
Family
ID=39541841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007103054060A Expired - Fee Related CN101221628B (zh) | 2006-12-26 | 2007-12-26 | 半导体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8159193B2 (enExample) |
| JP (3) | JP5412034B2 (enExample) |
| CN (1) | CN101221628B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2433364B (en) * | 2005-12-16 | 2011-06-08 | Nokia Corp | Interface between a terminal and an asic of a peripheral device |
| EP1962408B1 (en) * | 2006-11-16 | 2015-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Radio field intensity measurement device, and radio field intensity detector and game console using the same |
| US7750852B2 (en) | 2007-04-13 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5388632B2 (ja) | 2008-03-14 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8224277B2 (en) * | 2008-09-26 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101563904B1 (ko) * | 2008-09-29 | 2015-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20110063668A (ko) | 2008-09-30 | 2011-06-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| KR101628013B1 (ko) * | 2008-10-02 | 2016-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 반도체장치를 이용한 rfid 태그 |
| JP5319469B2 (ja) * | 2008-10-03 | 2013-10-16 | 株式会社半導体エネルギー研究所 | Rfidタグ |
| WO2010082449A1 (en) | 2009-01-16 | 2010-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Regulator circuit and rfid tag including the same |
| KR101030885B1 (ko) * | 2009-08-19 | 2011-04-22 | 삼성에스디아이 주식회사 | 이차전지 |
| US9312728B2 (en) * | 2009-08-24 | 2016-04-12 | Access Business Group International Llc | Physical and virtual identification in a wireless power network |
| WO2011093150A1 (en) | 2010-01-29 | 2011-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5551465B2 (ja) * | 2010-02-16 | 2014-07-16 | Necトーキン株式会社 | 非接触電力伝送及び通信システム |
| US9092710B2 (en) * | 2010-03-25 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2011239340A (ja) * | 2010-05-13 | 2011-11-24 | Nec Casio Mobile Communications Ltd | 無線通信装置及び無線通信システム |
| US8816633B1 (en) * | 2010-07-12 | 2014-08-26 | The Boeing Company | Energy harvesting circuit |
| JP5815337B2 (ja) | 2010-09-13 | 2015-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8659015B2 (en) | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6108808B2 (ja) | 2011-12-23 | 2017-04-05 | 株式会社半導体エネルギー研究所 | 基準電位生成回路 |
| JP6169376B2 (ja) | 2012-03-28 | 2017-07-26 | 株式会社半導体エネルギー研究所 | 電池管理ユニット、保護回路、蓄電装置 |
| US8933662B2 (en) * | 2012-07-26 | 2015-01-13 | Daifuku Co., Ltd. | Charging apparatus for lead storage battery |
| US9550004B2 (en) | 2013-09-06 | 2017-01-24 | Sensor Electronic Technology, Inc. | Ultraviolet diffusive illumination |
| JP6615565B2 (ja) * | 2014-10-24 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP3082072B1 (fr) * | 2015-04-13 | 2017-12-27 | EM Microelectronic-Marin SA | Bloc récepteur d'une radio-étiquette |
| JP6574737B2 (ja) * | 2016-05-31 | 2019-09-11 | 東京エレクトロン株式会社 | 整合器及びプラズマ処理装置 |
| JP6803269B2 (ja) * | 2017-03-10 | 2020-12-23 | トッパン・フォームズ株式会社 | 非接触通信媒体 |
| TWI629846B (zh) * | 2017-06-20 | 2018-07-11 | 國立交通大學 | 無線能量擷取與管理裝置 |
| JP7399857B2 (ja) | 2018-07-10 | 2023-12-18 | 株式会社半導体エネルギー研究所 | 二次電池の保護回路 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384577B1 (en) * | 1999-11-30 | 2002-05-07 | Masafumi Kikuchi | Electronic apparatus including remote control receiving system and AC adapter system |
| US6407534B1 (en) * | 2001-02-06 | 2002-06-18 | Quallion Llc | Detecting a microcurrent and a microcurrent detecting circuit |
| CN1629883A (zh) * | 2003-12-19 | 2005-06-22 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3178109B2 (ja) * | 1992-09-16 | 2001-06-18 | 松下電器産業株式会社 | コードレス電話機 |
| DE69411991T2 (de) * | 1993-05-05 | 1999-01-21 | Sgs- Thomson Microelectronics (Pte) Ltd., Singapur/Singapore | Leistungsaufteilungsdetektor |
| JPH0855198A (ja) * | 1994-08-15 | 1996-02-27 | Hitachi Ltd | 非接触icカード |
| JPH0869513A (ja) | 1994-08-30 | 1996-03-12 | Mitsubishi Denki Semiconductor Software Kk | 非接触icカード |
| JP2986059B2 (ja) * | 1995-03-08 | 1999-12-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バッテリ充電装置 |
| JPH08331768A (ja) * | 1995-06-02 | 1996-12-13 | Internatl Business Mach Corp <Ibm> | バッテリの過放電保護回路 |
| DE19547684A1 (de) * | 1995-12-20 | 1997-06-26 | Philips Patentverwaltung | Verfahren und Anordnung zum kontaktlosen Übertragen |
| JPH11345292A (ja) * | 1998-06-02 | 1999-12-14 | Matsushita Electric Ind Co Ltd | 非接触icカード |
| JP2000090221A (ja) * | 1998-09-09 | 2000-03-31 | Hitachi Maxell Ltd | 非接触型icカード |
| US6837438B1 (en) * | 1998-10-30 | 2005-01-04 | Hitachi Maxell, Ltd. | Non-contact information medium and communication system utilizing the same |
| DE69815350T2 (de) * | 1998-11-03 | 2004-04-29 | Em Microelectronic-Marin S.A., Marin | Wiederladbarer aktiver Transponder |
| JP3276930B2 (ja) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP2000197365A (ja) | 1998-12-24 | 2000-07-14 | Denso Corp | 直流電源回路 |
| JP2000201442A (ja) * | 1998-12-29 | 2000-07-18 | Tokin Corp | 非接触電力伝送を受ける非接触icカ―ド |
| JP2001067446A (ja) | 1999-08-27 | 2001-03-16 | Toppan Printing Co Ltd | 非接触型icカード |
| JP2001101364A (ja) * | 1999-10-01 | 2001-04-13 | Fujitsu Ltd | 非接触icカード用lsi |
| US6445936B1 (en) * | 1999-11-16 | 2002-09-03 | Agere Systems Guardian Corp. | Low power consumption quick charge for wireless device |
| KR20010049026A (ko) * | 1999-11-30 | 2001-06-15 | 서평원 | 무선전화기의 배터리 회복 장치 및 그 방법 |
| JP3800091B2 (ja) * | 2000-02-10 | 2006-07-19 | オムロン株式会社 | 非接触通信媒体及び非接触通信システム |
| US6304059B1 (en) * | 2000-06-22 | 2001-10-16 | Subhas C. Chalasani | Battery management system, method of operation therefor and battery plant employing the same |
| JP2002176141A (ja) | 2000-12-07 | 2002-06-21 | Hitachi Ltd | 半導体集積回路装置及びicタグ |
| US20020070708A1 (en) * | 2000-12-08 | 2002-06-13 | Ten-Der Wu | Battery charging device |
| US6936936B2 (en) * | 2001-03-01 | 2005-08-30 | Research In Motion Limited | Multifunctional charger system and method |
| JP2002368647A (ja) | 2001-06-06 | 2002-12-20 | Matsushita Electric Ind Co Ltd | データキャリア |
| US6944424B2 (en) * | 2001-07-23 | 2005-09-13 | Intermec Ip Corp. | RFID tag having combined battery and passive power source |
| JP4498669B2 (ja) * | 2001-10-30 | 2010-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、及びそれらを具備する電子機器 |
| US6777829B2 (en) * | 2002-03-13 | 2004-08-17 | Celis Semiconductor Corporation | Rectifier utilizing a grounded antenna |
| JP4719852B2 (ja) * | 2002-10-18 | 2011-07-06 | シンボル テクノロジーズ, インコーポレイテッド | パッシブrfidタグの不必要な再交渉を最小化するためのシステムおよび方法 |
| AU2003901730A0 (en) * | 2003-04-11 | 2003-05-01 | Cochlear Limited | Power management system |
| KR101076953B1 (ko) * | 2003-10-27 | 2011-10-26 | 소니 주식회사 | 전지팩 |
| JP2005316724A (ja) | 2004-04-28 | 2005-11-10 | Matsushita Electric Works Ltd | アクティブ型rfidタグ |
| JP4265487B2 (ja) | 2004-06-17 | 2009-05-20 | 富士通株式会社 | リーダー装置、その装置の送信方法及びタグ |
| US7202636B2 (en) * | 2004-08-10 | 2007-04-10 | Illinois Tool Works Inc. | Method and apparatus for charging batteries |
| JP3972930B2 (ja) * | 2004-09-30 | 2007-09-05 | 松下電工株式会社 | 充電装置 |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| JP2006280060A (ja) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | 充電装置 |
| EP1998373A3 (en) * | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| WO2007058329A1 (en) * | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR100782271B1 (ko) * | 2005-11-28 | 2007-12-04 | 엘지전자 주식회사 | 휴대 단말기의 충전 제어 장치 및 방법 |
| US7521890B2 (en) * | 2005-12-27 | 2009-04-21 | Power Science Inc. | System and method for selective transfer of radio frequency power |
| TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| CN102360442B (zh) * | 2006-03-10 | 2015-01-07 | 株式会社半导体能源研究所 | 半导体器件及其操作方法 |
| US7795613B2 (en) * | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
-
2007
- 2007-12-14 JP JP2007323046A patent/JP5412034B2/ja not_active Expired - Fee Related
- 2007-12-19 US US11/960,014 patent/US8159193B2/en not_active Expired - Fee Related
- 2007-12-26 CN CN2007103054060A patent/CN101221628B/zh not_active Expired - Fee Related
-
2012
- 2012-04-16 US US13/447,397 patent/US8482261B2/en not_active Expired - Fee Related
-
2013
- 2013-08-26 JP JP2013174059A patent/JP5659276B2/ja not_active Expired - Fee Related
-
2014
- 2014-12-01 JP JP2014242743A patent/JP5824134B2/ja not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384577B1 (en) * | 1999-11-30 | 2002-05-07 | Masafumi Kikuchi | Electronic apparatus including remote control receiving system and AC adapter system |
| US6407534B1 (en) * | 2001-02-06 | 2002-06-18 | Quallion Llc | Detecting a microcurrent and a microcurrent detecting circuit |
| CN1629883A (zh) * | 2003-12-19 | 2005-06-22 | 株式会社半导体能源研究所 | 半导体器件及其驱动方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015097393A (ja) | 2015-05-21 |
| JP2008181494A (ja) | 2008-08-07 |
| US20080150475A1 (en) | 2008-06-26 |
| US8482261B2 (en) | 2013-07-09 |
| CN101221628A (zh) | 2008-07-16 |
| JP5824134B2 (ja) | 2015-11-25 |
| US20120200255A1 (en) | 2012-08-09 |
| JP2014026657A (ja) | 2014-02-06 |
| US8159193B2 (en) | 2012-04-17 |
| JP5659276B2 (ja) | 2015-01-28 |
| JP5412034B2 (ja) | 2014-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101221628B (zh) | 半导体装置 | |
| JP5258282B2 (ja) | 半導体装置 | |
| CN101087074B (zh) | 蓄电装置及具备该蓄电装置的移动式电子设备 | |
| CN102664449B (zh) | 蓄电装置及具备该蓄电装置的半导体装置 | |
| CN101183127B (zh) | 电波强度测定装置、使用它的电波强度检测器及游戏设备 | |
| TWI517153B (zh) | 半導體裝置 | |
| CN101165712B (zh) | 半导体装置 | |
| KR101435966B1 (ko) | 반도체 장치 및 상기 반도체 장치를 가진 ic 라벨, ic 태그, 및 ic 카드 | |
| CN101548286B (zh) | 半导体装置 | |
| JP5236243B2 (ja) | Rfタグ | |
| JP4906093B2 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121010 Termination date: 20211226 |