JP5319469B2 - Rfidタグ - Google Patents
Rfidタグ Download PDFInfo
- Publication number
- JP5319469B2 JP5319469B2 JP2009218276A JP2009218276A JP5319469B2 JP 5319469 B2 JP5319469 B2 JP 5319469B2 JP 2009218276 A JP2009218276 A JP 2009218276A JP 2009218276 A JP2009218276 A JP 2009218276A JP 5319469 B2 JP5319469 B2 JP 5319469B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- circuit
- semiconductor
- insulating film
- rfid tag
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000001514 detection method Methods 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims description 24
- 238000007493 shaping process Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 303
- 239000004065 semiconductor Substances 0.000 description 147
- 239000010410 layer Substances 0.000 description 104
- 238000000034 method Methods 0.000 description 61
- 239000000463 material Substances 0.000 description 51
- 239000012535 impurity Substances 0.000 description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 35
- 229910052782 aluminium Inorganic materials 0.000 description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 29
- 239000012212 insulator Substances 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010936 titanium Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 238000002425 crystallisation Methods 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 23
- 229910052719 titanium Inorganic materials 0.000 description 23
- 230000008025 crystallization Effects 0.000 description 22
- 238000004891 communication Methods 0.000 description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 17
- 229910052759 nickel Inorganic materials 0.000 description 15
- 239000010937 tungsten Substances 0.000 description 15
- 239000010949 copper Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 239000000956 alloy Substances 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
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- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- 238000009832 plasma treatment Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 11
- 239000002356 single layer Substances 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
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- 238000005530 etching Methods 0.000 description 8
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- 229910003437 indium oxide Inorganic materials 0.000 description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 239000010948 rhodium Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 7
- -1 oxygen radicals Chemical class 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 229920001940 conductive polymer Polymers 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 235000013305 food Nutrition 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 230000036541 health Effects 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 229910052743 krypton Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical class [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
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- 239000007790 solid phase Substances 0.000 description 3
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- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 description 2
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
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- 150000002367 halogens Chemical class 0.000 description 2
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- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 1
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- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
- G06K19/0715—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management the arrangement including means to regulate power transfer to the integrated circuit
Description
RFIDタグ100は、論理回路101、整流回路102、比較回路103、保護回路104、包絡線検出回路107、アンテナ回路110を有する(図1)。保護回路104は、スイッチ(トランジスタともいう) 121と容量122とを有する選択回路部120、及びスイッチ(トランジスタともいう) 131と負荷132とを有する保護回路部130を有する。
図2に、実施の形態1にて説明した構成の詳細を示す。
本実施の形態においては、実施の形態1で説明した、本発明の一態様のRFIDタグ における、整流回路、比較回路、保護回路を構成するトランジスタ、抵抗、配線群を実際に基板上に形成するレイアウト例を示す。
本実施の形態では、上記実施の形態で示したRFIDタグを得るための一作製方法を説明する。
本実施の形態では、RFIDタグを、より信頼性を高く、かつ歩留まり良く作製する方法について、図9を用いて説明する。本実施の形態では、一例としてCMOS(Complementary Metal Oxide Semiconductor)に関して説明する。
RFIDタグは、微小な半導体素子を多数用いて形成した半導体集積回路を有するため、外部からの静電気放電(Electrostatic Discharge:ESD)による回路の誤動作や半導体素子の損傷を生じやすい。特に無線タグ等のように、表面積の大きい導電体を有するアンテナ等は、静電気放電が生ずる可能性が高い。本実施の形態においては、そのような静電気放電から半導体集積回路を保護する構成の一例について述べる。
本発明の一態様のRFIDタグの用途は広範にわたり、非接触で対象物の履歴等の情報を明確にし、生産・管理等に役立てる商品であればどのようなものにも適用することができる。例えば、紙幣、硬貨、有価証券類、証書類、無記名債券類、包装用容器類、書籍類、記録媒体、身の回り品、乗物類、食品類、衣類、保健用品類、生活用品類、薬品類及び電子機器等に設けて使用することができる。これらの例に関して図8を用いて説明する。
101 論理回路
102 整流回路
103 比較回路
104 過電圧保護回路
107 包絡線検出回路
110 アンテナ回路
111 アンテナ
112 容量
120 選択回路部
121 スイッチ
122 容量
130 保護回路部
131 スイッチ
132 負荷
133 容量
Claims (4)
- 交流信号の送受信を行うことができる機能を有するアンテナ回路と、
前記交流信号から直流電圧を生成することができる機能を有する整流回路と、
前記直流電圧によって駆動されることができる機能を有する論理回路と、
前記交流信号から包絡線を検出することができる機能を有する包絡線検出回路と、
前記直流電圧と、基準電圧との電位差を検出し、前記電位差に応じた電位を出力することができる機能を有する比較回路と、
前記電位に応じて、前記アンテナ回路のインピーダンスを変化させることができる機能を有する保護回路部と、
前記包絡線によって制御され、前記比較回路から出力される前記電位を、前記保護回路部に入力するか否かを選択することができる機能を有する選択回路部と、を有することを特徴とするRFIDタグ。 - 交流信号の送受信を行うことができる機能を有するアンテナ回路と、
前記交流信号から直流電圧を生成することができる機能を有する整流回路と、
前記直流電圧によって駆動されることができる機能を有する論理回路と、
前記交流信号から包絡線を検出することができる機能を有する包絡線検出回路と、
前記包絡線を整形して、パルス信号を出力することができる機能を有するバッファ回路と、
前記直流電圧と、基準電圧との電位差を検出し、前記電位差に応じた電位を出力することができる機能を有する比較回路と、
前記電位に応じて、前記アンテナ回路のインピーダンスを変化させることができる機能を有する保護回路部と、
前記パルス信号によって制御され、前記比較回路から出力される前記電位を、前記保護回路部に入力するか否かを選択することができる機能を有する選択回路部と、を有することを特徴とするRFIDタグ。 - 請求項1又は請求項2において、
前記保護回路部は、前記交流信号を受信する回路のインピーダンスを変化させる手段として容量を有することを特徴とするRFIDタグ。 - 請求項1又は請求項2において、
前記保護回路部は、前記交流信号を受信する回路のインピーダンスを変化させる手段として抵抗を有することを特徴とするRFIDタグ。
Priority Applications (1)
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JP2009218276A JP5319469B2 (ja) | 2008-10-03 | 2009-09-22 | Rfidタグ |
Applications Claiming Priority (3)
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JP2008258283 | 2008-10-03 | ||
JP2008258283 | 2008-10-03 | ||
JP2009218276A JP5319469B2 (ja) | 2008-10-03 | 2009-09-22 | Rfidタグ |
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JP2013145250A Division JP5460912B2 (ja) | 2008-10-03 | 2013-07-11 | Rfidタグ |
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JP2010108485A JP2010108485A (ja) | 2010-05-13 |
JP2010108485A5 JP2010108485A5 (ja) | 2012-09-20 |
JP5319469B2 true JP5319469B2 (ja) | 2013-10-16 |
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JP2009218276A Expired - Fee Related JP5319469B2 (ja) | 2008-10-03 | 2009-09-22 | Rfidタグ |
JP2013145250A Expired - Fee Related JP5460912B2 (ja) | 2008-10-03 | 2013-07-11 | Rfidタグ |
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JP2013145250A Expired - Fee Related JP5460912B2 (ja) | 2008-10-03 | 2013-07-11 | Rfidタグ |
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US (1) | US8181875B2 (ja) |
JP (2) | JP5319469B2 (ja) |
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-
2009
- 2009-09-22 JP JP2009218276A patent/JP5319469B2/ja not_active Expired - Fee Related
- 2009-10-02 US US12/572,766 patent/US8181875B2/en not_active Expired - Fee Related
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JP5460912B2 (ja) | 2014-04-02 |
US8181875B2 (en) | 2012-05-22 |
JP2013250985A (ja) | 2013-12-12 |
JP2010108485A (ja) | 2010-05-13 |
US20100084467A1 (en) | 2010-04-08 |
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