CN101193724B - 形成低型面线弧的方法 - Google Patents
形成低型面线弧的方法 Download PDFInfo
- Publication number
- CN101193724B CN101193724B CN2006800005691A CN200680000569A CN101193724B CN 101193724 B CN101193724 B CN 101193724B CN 2006800005691 A CN2006800005691 A CN 2006800005691A CN 200680000569 A CN200680000569 A CN 200680000569A CN 101193724 B CN101193724 B CN 101193724B
- Authority
- CN
- China
- Prior art keywords
- line
- bonding wire
- weldering
- lead
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000003466 welding Methods 0.000 claims description 84
- 230000033001 locomotion Effects 0.000 claims description 49
- 230000000630 rising effect Effects 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 8
- 238000005452 bending Methods 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/789—Means for monitoring the connection process
- H01L2224/78901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/125—Deflectable by temperature change [e.g., thermostat element]
- Y10T428/12507—More than two components
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供了一种在第一焊接位置和第二焊接位置之间焊接引线的方法。该方法包括利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊。该方法还包括邻近第一线焊在引线中成形弧部。该方法还包括在成形步骤之后在朝向第一线焊的方向上降低焊线工具。在焊线工具接触到第一线焊之前中断该降低步骤。该方法还包括将引线的第二端焊接至第二焊接位置。
Description
相关申请的交叉参考
本申请要求2005年1月25日提交的美国临时申请No.60/646,950的优先权,该美国申请的内容以参考的方式结合于此。
技术领域
本发明涉及半导体设备的线焊,并且更具体地说提供与半导体设备的线焊相关的低型面线弧。
背景技术
在各种半导体设备的制造中,线焊技术经常用来连接该设备中的部件。例如,线焊经常用来在晶粒和引线框架上的触点之间提供互连。一种示例性的常规线焊操作涉及:(1)焊接至晶粒上的第一焊接位置(例如利用球焊),(2)朝向引线框架上的第二焊接位置延伸引线,(3)将延伸的引线的端部焊接至第二焊接位置,和(4)切割该引线。
在半导体工业中一直存在着降低部件尺寸以及增大每单位面积上线焊数量的压力。因而,存在着各种技术以降低半导体设备中的部件之间的线焊的型面或高度。一种这种的技术涉及在将引线球沉积在第一焊接位置上之后将线弧“碾压”(例如利用毛细管工具)在第一焊接位置(例如晶粒)的顶面上。在引线被碾压在引线球的顶面上时,那么引线就朝向第二焊接位置延伸并焊接至第二焊接位置。
这种“碾压”技术可提供相对低型面的线弧;然而,这种技术也具有很多缺点。例如,因为引线被碾压,引线中具有某些弱点, 主要在正好处于碾压部分下游的区域中。这个弱点会导致多种应用中的不满意和不一致的拉动值(pull value)。
因而,希望提供一种用于提供低型面的线弧同时克服与常规技术相关的某些缺点的方法和装置。
发明内容
根据本发明的一个示例性实施例,提供了一种在第一焊接位置和第二焊接位置之间焊接引线的方法。该方法包括利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊。该方法还包括邻近第一线焊在引线中成形弧部。该方法还包括在成形步骤之后在朝向第一线焊的方向上降低焊线工具。在焊线工具接触到第一线焊之前中断该降低步骤。该方法还包括将引线的第二端焊接至第二焊接位置。
根据本发明的另一示例性实施例,提供了另一种在第一焊接位置和第二焊接位置之间焊接引线的方法。该方法包括利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊。该方法还包括邻近第一线焊在引线中成形弧部。成形步骤包括将焊线工具升高到第一线焊之上、移动焊线工具远离第一线焊、升高焊线工具、以及朝向第一线焊移动焊线工具。在焊线工具接触到第一线焊之前中断该移动步骤。该方法还包括将引线的第二端焊接至第二焊接位置。
本发明的方法也可以具体化为装置(例如作为焊线机的智能部分)、或者具体化为计算机可读载体上的计算机程序指令(例如用于焊线机中的计算机可读载体)。
附图说明
在结合附图阅读时,从下面的详细描述中能最好地理解本发明。要强调的是,根据惯例,附图的各个零件并不是按比例的。相反, 为了清楚起见,各个零件的尺寸可以任意地扩大或减小。附图中包括以下附图:
图1示出了根据本发明各个示例性实施例用于形成低型面线弧的技术;
图2A-2H是示出根据本发明的示例性实施例在第一焊接位置和第二焊接位置之间焊接引线的一种方法的视图;
图3示出了根据本发明的示例性实施例形成的线焊;
图4A-4J是示出根据本发明的示例性实施例在第一焊接位置和第二焊接位置之间焊接引线的另一种方法的框图;和
图5示出了根据本发明的示例性实施例形成的引线的弧部;
具体实施方式
美国专利No.5,205,463、No.6,062,462和No.6,156,990,以及美国专利公开No.2004/0152292涉及线焊技术,并且全部以参考的方式结合于此。
如这里所用的,术语“弧部”指的是在将要焊接于第一焊接位置和第二焊接位置之间的引线中形成的任何弯曲、曲线、钩、隆起或者折叠。根据本发明的“弧部”的两端不必朝向彼此延伸。示例性的“弧部”在附图中示出。
本发明涉及一种生产用于线焊中的低型面线弧的方法和系统。在本发明的某些实施例中,在线焊形成于第一焊接位置之后,在引线中成形弧部。在成形弧部之后,用来成形弧部的焊线工具(例如毛细管工具)朝向线焊的位置(或者至少在其大致方向上)降低。焊线工具的这种向下运动在工具接触到线焊之前停止,并且这样,基本上避免了由于这种接触(或者将引线碾压到线焊)而在引线中引起的潜在弱点。随后,将引线的第二端焊接到第二焊接位置以完成线焊操作。
因而,根据本发明,利用焊线工具在没有将引线碾压到其自身上的情况下在焊线中形成弧形(或者隆起形、钩形等)。弧形可直接形成于第一线焊之上,或者可形成于第一线焊的任一侧。弧形期望地用来最小化引线上的某些应力,从而降低由于引线上的进一步成形或拉动所导致的“颈部”损坏。在薄/悬垂晶粒应用中尤其希望如此,在所述应用中,在线焊操作期间晶粒的偏转(即垂直运动)会导致不稳定或不一致的拉动试验和成弧结果。
而且,与常规的碾压弧线焊操作相对比,根据本发明的弧部不必直接形成于第一线焊之上。通过将引线打弧远离第一线焊(即下述的“折叠距离”大于零),获得了降低的型面。
图1示出了根据本发明用于形成低型面线弧的各种运动。更具体地,图1示出了引线隆起100(例如通过球形焊接形成的隆起)。在形成引线隆起100(例如在未示出的晶粒上)之后,连接至引线隆起100的引线以多种方式(下面将参照图1描述其中一些)之一打弧,并且此后引线被焊接到第二焊接位置(例如引线框架)。
图1示出了用于成形弧部的各种不同的组合运动(即比如毛细管工具之类的焊线工具的运动)。更具体地,在利用焊线工具将引线的第一端焊接到第一焊接位置(例如第一线焊100)之后,在邻近第一线焊100的引线中成形弧部。弧部通过组合运动来形成。图1所示的第一种组合运动以实线示出并且包括运动A、B、C和D。第二种组合运动以虚实线示出并且包括A、B1、B2、C、D1和D2。例如,焊线机的使用者在进行弧控制以形成期望的弧形的同时,可选择第一种和第二种组合运动中的任一种(或者本发明范围内的其它组合运动)。
针对第一种组合运动,在步骤A,将焊线工具升高到第一线焊100之上。在步骤B,沿着向下的角度移动焊线工具远离第一线焊100。 随后,在步骤C将焊线工具升高,并且然后在步骤D,使焊线工具沿着另一向下的角度基本上朝向第一线焊100运动。在步骤D,在焊线工具接触到第一线焊100之前,中断沿着向下角度的运动。在步骤D之后,将引线的第二端焊接至第二焊接位置(图1中未示出)。
针对第二种组合运动,在步骤A,再次将焊线工具升高到第一线焊100之上。在步骤B1,使焊线工具横向运动远离第一线焊100,并且在步骤B2使焊线工具降低。随后,在步骤C将焊线工具升高。然后在步骤D 1使焊线工具横向移向第一线焊100之上的位置,并且在步骤D2,使焊线工具降低。在焊线工具接触到第一线焊100之前,中断步骤D2期间的向下运动。在步骤D2之后,将引线的第二端焊接(在引线延伸之后)至第二焊接位置(图1中未示出)。
图1所示的某些运动可以变化,但是仍然在本发明的范围内。例如,运动B2可以完全取消,以使得运动B1(基本上横向运动远离第一线焊100)之后就是运动C。又一种替代方案是用沿着向上的角度远离第一线焊100的运动代替运动B(沿着向下的角度运动远离第一线焊100)。
而且,图1所示运动的其它组合也是可以想象的,例如,(1)运动A、B1、C和D;(2)运动A、B1、C、D1和D2;和(3)运动A、B、C、D1和D2。还有,运动A(基本上垂直的运动)可以用沿着向上的角度远离第一线焊100延伸的运动所替代。这种运动能在任何运动B、B1或C(在其中没有相应于B或B1的运动的实施例中)之前。因而,很显然本发明并不限于这里所示的示例性实施例。
在操作中,本发明可以具体化为焊线机中的软件。用于本发明的某些参数可以在软件中设置,比如焊线工具(例如毛细管工具)所行进的距离和方向。图1示出了多个参数,“弯折高度”指的是在步骤A期间行进的垂直距离。“反向运动”指的是在步骤B(或 者步骤B1和B2)期间行进的距离和方向。“Rmot角”指的是反向运动方向和垂直平面之间的角。例如,垂直平面和步骤B1期间行进的方向之间的Rmot角为90度。类似地,垂直平面和步骤B期间行进的方向之间的Rmot角大约为115度。根据本发明,Rmot角可以小于90度。“折叠弧因子”指的是在步骤C期间行进的垂直距离,其影响将要形成的弧部中的引线量。一般希望弧部中引线较少以具有较低的型面;然而,弧部中太少的引线会导致与之邻近的引线的弧部中产生应力。“折叠距离”指的是在步骤D(或者步骤D1和D2)期间行进的距离和方向。因为根据本发明,焊线工具不用于碾压引线隆起,“折叠高度”余隙可如图1所示那样编程。
图2A-2H是示出在第一焊接位置和第二焊接位置之间焊接引线202的方法的框图。图2A示出了用于在第一焊接位置和第二焊接位置之间焊接引线202的焊线工具200(即毛细管工具)。在图2A中,引线200一端上的引线隆起202a示出为焊接至第一焊接位置(图2A中未示出,参见图2G中的元件204)。然后如图2B所示在垂直方向上升高焊线工具200(即“弯折高度”运动)。然后在图2C中焊线工具200横向移动远离第一焊接位置(“反向运动”),Rmot角为大约90度(类似于图1中步骤B1示出的方向)。在图2D,垂直地升高焊线工具200(“折叠弧因子”运动),并且在图2E中朝向引线隆起202a(在本实施例中部分地越过)沿着向下的角度移动焊线工具200(“折叠距离”运动)。在图2F中,升高焊线工具200以允许引线从工具中“放出”。在图2G中,将引线202的第二端202d焊接至第二焊接位置,并且在图2H中,升高焊线工具200,并且引线202示出为切断且与焊线工具200分离。如图2G-2H所示,在第一和第二焊接位置之间延伸的引线202包括引线隆起202a、弧部202b、引线弯折202c以及第二端202d。
图3示出了以与图2H所示引线202类似的方式形成的线焊304。更具体地,线焊304在第一焊接位置(即晶粒300)和第二焊接位置(即引线框架302)之间延伸。线焊304包括引线隆起304a(焊接至晶粒300)、弧部304b、引线弯折304c、直线部304d、引线弯折304e以及第二端304f(焊接至引线框架302)。线焊304(图3所示)与引线302(图2H所示)不同,例如,因为包括了引线弯折304e(引线202不具有这样的弯折)。因而,很明显根据本发明焊接的引线可以按照希望进一步成形。
图4A-4J是示出在第一焊接位置和第二焊接位置之间焊接引线402的一种示例性方法的框图。图4A示出了用于在第一焊接位置和第二焊接位置之间焊接引线402的焊线工具400(即毛细管工具)。在图4A中,引线400一端上的引线隆起402a示出为焊接至第一焊接位置(图4A中未示出,参见图4I中的元件404)。然后如图4B所示在垂直方向上升高焊线工具400(即“弯折高度”运动)。然后在图4C中焊线工具400横向移动远离第一焊接位置(“反向运动”),其中该横向移动与图2C所示的横向移动相比增大了。在图4D,焊线工具400大致朝向引线隆起402a降低。在图4C中执行的运动具有大约90度的Rmot角。在图4C和4D中执行的运动可以由沿着向下角度的方向中的单个运动来执行(例如超过90度的Rmot角),比如上面相对于图1中运动B所示和所述的运动。
在图4E中,垂直地升高焊线工具400(“折叠弧因子”运动),并且在图4F中焊线工具400移向引线隆起402a(在本实施例中部分地越过)(“折叠距离”运动)。在图4G中,大致朝向引线隆起402a降低焊线工具400。图4F和4G中执行的运动可以由沿着向下角度的方向中的单个运动来执行,比如上面相对于图1中运动D所示和所述的运动。
在图4H中,升高焊线工具400以允许引线从工具中“放出”。在图4I中,将引线402的第二端402c焊接至第二焊接位置,并且在图4J中,升高焊线工具400,并且引线402示出为切断且与焊线工具400分离。如图4I-4J所示,在第一和第二焊接位置之间延伸的引线402包括引线隆起402a、弧部402b以及第二端402c。
图5是以类似于上面相对于图4A-4J所示和所述类似的方式形成的引线500的一部分的视图。引线500的所示部分包括引线隆起500a、弧部500b以及直线部500c。因为弧部500b的形成方式(其类似于图4A-4J所示的方法),一部分引线500(凹陷部500d)已经塌陷为与引线500的另一部分相接触(或者虚拟接触)。这种“塌陷”部分地由于弧形成期间的引线“放出”量所导致,并且部分地由于用于形成线弧的运动的结果。而且,这种“塌陷”是非常期望的,因为引线500具有非常低的型面,而不用已被焊线工具所“碾压”。
本发明的线焊技术能在多种可选的媒介上实施。例如,该技术可作为软件安装在现有的计算机系统/服务器(用于与焊线机相连接或集成的计算机系统)中。而且,该技术可以以包含与线焊技术相关的计算机指令(例如计算机程序指令)的计算机可读载体(例如固态存储器、光盘、磁盘、射频载体介质、音频载体介质等)来操作。
这里公开的线焊技术提供了另外的益处:至少部分地因为降低的型面或高度,引线在第一焊接之上的部分可以比常规线焊的相应部分更硬。这种变硬可以期望地降低引线弯曲(wire sweep)。
尽管这里已经参照具体实施例示出和描述了本发明,但是本发明并不限于所示的细节。而是,在权利要求的范围及等同的范围内且在不偏离本发明之下,能在细节上做出各种变型。
Claims (5)
1.一种在第一焊接位置和第二焊接位置之间焊接引线的方法,该方法包括下列步骤:
利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊;
在第一线焊之上形成引线的折叠部,并使引线的折叠部与第一线焊接触,成形步骤包括:(a)将焊线工具升高到第一线焊之上,(b)横向移动焊线工具远离第一线焊,(c)降低焊线工具,(d)升高焊线工具,和(e)朝向第一线焊之上的位置移动焊线工具;
在成形步骤之后,在朝向第一线焊的方向上降低焊线工具,在焊线工具接触到第一线焊之前中断该降低步骤,以便焊线工具不将引线的折叠部焊接到第一线焊;和
将引线的第二端焊接至第二焊接位置。
2.如权利要求1的方法,其中降低步骤包括在朝向第一线焊但到达第一线焊一侧的方向上降低焊线工具。
3.一种在第一焊接位置和第二焊接位置之间焊接引线的方法,该方法包括下列步骤:
利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊;
在第一线焊之上形成引线的折叠部,并使引线的折叠部与第一线焊接触,成形步骤包括:(a)将焊线工具升高到第一线焊之上,(b)沿着向下的角度移动焊线工具远离第一线焊,(c)升高焊线工具,和(d)朝向第一线焊之上的位置移动焊线工具,
在成形步骤之后,在朝向第一线焊的方向上降低焊线工具,在焊线工具接触到第一线焊之前中断该降低步骤,以便焊线工具不将引线的折叠部焊接到第一线焊;和
将引线的第二端焊接至第二焊接位置。
4.一种在第一焊接位置和第二焊接位置之间焊接引线的方法,该方法包括下列步骤:
利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊;
在第一线焊之上形成引线的折叠部,并使引线的折叠部与第一线焊接触,成形步骤包括:(a)将焊线工具升高到第一线焊之上,(b)横向移动焊线工具远离第一线焊,(c)降低焊线工具,(d)升高焊线工具,和(e)朝向第一线焊之上的位置沿着另一向下的角度移动焊线工具;在焊线工具接触到第一线焊之前中断该步骤(e),以便焊线工具不将引线的折叠部焊接到第一线焊;和
将引线的第二端焊接至第二焊接位置。
5.一种在第一焊接位置和第二焊接位置之间焊接引线的方法,该方法包括下列步骤:
利用焊线工具将引线的第一端焊接至第一焊接位置以形成第一线焊;
在第一线焊之上形成引线的折叠部,并使引线的折叠部与第一线焊接触,成形步骤包括:(a)将焊线工具升高到第一线焊之上,(b)沿着向下的角度移动焊线工具远离第一线焊,(c)升高焊线工具,和(d)沿着另一向下的角度朝向第一线焊之上的位置移动焊线工具,在焊线工具接触到第一线焊之前中断该步骤(d),以便焊线工具不将引线的折叠部焊接到第一线焊;和
将引线的第二端焊接至第二焊接位置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64695005P | 2005-01-25 | 2005-01-25 | |
US60/646,950 | 2005-01-25 | ||
US11/306,678 US7464854B2 (en) | 2005-01-25 | 2006-01-06 | Method and apparatus for forming a low profile wire loop |
US11/306,678 | 2006-01-06 | ||
PCT/US2006/000540 WO2006081056A2 (en) | 2005-01-25 | 2006-01-09 | Method and apparatus for forming a low profile wire loop |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101193724A CN101193724A (zh) | 2008-06-04 |
CN101193724B true CN101193724B (zh) | 2011-01-12 |
Family
ID=36695698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800005691A Active CN101193724B (zh) | 2005-01-25 | 2006-01-09 | 形成低型面线弧的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7464854B2 (zh) |
JP (1) | JP5830204B2 (zh) |
KR (2) | KR100856994B1 (zh) |
CN (1) | CN101193724B (zh) |
TW (1) | TWI337764B (zh) |
WO (1) | WO2006081056A2 (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008091527A (ja) * | 2006-09-29 | 2008-04-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
WO2008048262A1 (en) * | 2006-10-18 | 2008-04-24 | Kulicke And Soffa Industries, Inc. | Improved conductive bumps, wire loops including the improved conductive bumps, and methods of forming the same |
JP5481769B2 (ja) * | 2006-11-22 | 2014-04-23 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
JP2008235787A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US7659141B2 (en) * | 2007-09-25 | 2010-02-09 | Silverbrook Research Pty Ltd | Wire bond encapsulant application control |
US7741720B2 (en) | 2007-09-25 | 2010-06-22 | Silverbrook Research Pty Ltd | Electronic device with wire bonds adhered between integrated circuits dies and printed circuit boards |
US7669751B2 (en) | 2007-09-25 | 2010-03-02 | Silverbrook Research Pty Ltd | Method of forming low profile wire bonds between integrated circuits dies and printed circuit boards |
WO2009096950A1 (en) * | 2008-01-30 | 2009-08-06 | Kulicke And Soffa Industries, Inc. | Wire loop and method of forming the wire loop |
JP4625858B2 (ja) * | 2008-09-10 | 2011-02-02 | 株式会社カイジョー | ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディング制御プログラム |
JP4361593B1 (ja) * | 2008-10-21 | 2009-11-11 | 株式会社新川 | ワイヤボンディング方法 |
JP4344002B1 (ja) | 2008-10-27 | 2009-10-14 | 株式会社新川 | ワイヤボンディング方法 |
US8096462B2 (en) * | 2009-04-30 | 2012-01-17 | International Business Machines Corporation | Method of reworking electrical short in ultra sonic bonder |
JP5062283B2 (ja) * | 2009-04-30 | 2012-10-31 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
US8680686B2 (en) * | 2010-06-29 | 2014-03-25 | Spansion Llc | Method and system for thin multi chip stack package with film on wire and copper wire |
US20120018768A1 (en) * | 2010-07-26 | 2012-01-26 | Intematix Corporation | Led-based light emitting devices |
KR101746614B1 (ko) * | 2011-01-07 | 2017-06-27 | 삼성전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
MY181180A (en) * | 2011-09-09 | 2020-12-21 | Carsem M Sdn Bhd | Low loop wire bonding |
US8998063B2 (en) * | 2012-02-07 | 2015-04-07 | Orthodyne Electronics Corporation | Wire loop forming systems and methods of using the same |
CN103077905B (zh) * | 2013-01-29 | 2015-04-08 | 中南大学 | 一种引线成弧方法及装置 |
JP6092084B2 (ja) | 2013-11-29 | 2017-03-08 | アオイ電子株式会社 | 半導体装置および半導体装置の製造方法 |
CN105977174A (zh) * | 2016-07-07 | 2016-09-28 | 力成科技(苏州)有限公司 | 指纹产品封装结构的金线打线方法 |
JP2018107296A (ja) * | 2016-12-27 | 2018-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US10600756B1 (en) | 2017-02-15 | 2020-03-24 | United States Of America, As Represented By The Secretary Of The Navy | Wire bonding technique for integrated circuit board connections |
KR102621753B1 (ko) * | 2018-09-28 | 2024-01-05 | 삼성전자주식회사 | 본딩 와이어, 이를 포함하는 반도체 패키지, 및 와이어 본딩 방법 |
GB2604433B (en) * | 2020-12-23 | 2023-05-03 | Skyworks Solutions Inc | Apparatus and methods for tool mark free stitch bonding |
JP7381910B2 (ja) | 2021-08-26 | 2023-11-16 | 日亜化学工業株式会社 | 発光装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4445633A (en) * | 1982-02-11 | 1984-05-01 | Rockwell International Corporation | Automatic bonder for forming wire interconnections of automatically controlled configuration |
CN1034463A (zh) * | 1988-01-18 | 1989-08-02 | 雷伊化学公司 | 电子元件的互连 |
US6315190B1 (en) * | 1998-06-25 | 2001-11-13 | Kabushiki Kaisha Shinkawa | Wire bonding method |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06101490B2 (ja) | 1989-10-30 | 1994-12-12 | 三菱電機株式会社 | ワイヤボンディング方法 |
JP2814151B2 (ja) * | 1991-02-27 | 1998-10-22 | 株式会社新川 | ワイヤボンデイング方法 |
US5205463A (en) * | 1992-06-05 | 1993-04-27 | Kulicke And Soffa Investments, Inc. | Method of making constant clearance flat link fine wire interconnections |
US6295729B1 (en) * | 1992-10-19 | 2001-10-02 | International Business Machines Corporation | Angled flying lead wire bonding process |
JPH07130785A (ja) | 1993-11-02 | 1995-05-19 | Nippon Avionics Co Ltd | ワイヤボンディング方法 |
JPH0951011A (ja) | 1995-08-10 | 1997-02-18 | Tanaka Denshi Kogyo Kk | 半導体チップのワイヤボンディング方法 |
US6062462A (en) * | 1997-08-12 | 2000-05-16 | Kulicke And Soffa Investments, Inc. | Apparatus and method for making predetermined fine wire ball sizes |
JP3172473B2 (ja) * | 1997-09-08 | 2001-06-04 | 三洋電機株式会社 | 半導体装置 |
JPH11111750A (ja) * | 1997-09-30 | 1999-04-23 | Sanyo Electric Co Ltd | 半導体装置 |
JP3436676B2 (ja) | 1998-01-30 | 2003-08-11 | 株式会社日立ユニシアオートモティブ | ボンディングワイヤの成形方法 |
US6156990A (en) * | 1998-06-22 | 2000-12-05 | Kulicke & Soffa Industries, Inc. | Long-wearing impervious conductive wire clamp |
JP3377747B2 (ja) * | 1998-06-23 | 2003-02-17 | 株式会社新川 | ワイヤボンディング方法 |
JP4467175B2 (ja) * | 2000-12-22 | 2010-05-26 | 株式会社新川 | ボンディングデータ設定装置および方法 |
US7229906B2 (en) * | 2002-09-19 | 2007-06-12 | Kulicke And Soffa Industries, Inc. | Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine |
JP2004172477A (ja) * | 2002-11-21 | 2004-06-17 | Kaijo Corp | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置 |
US6815836B2 (en) * | 2003-03-24 | 2004-11-09 | Texas Instruments Incorporated | Wire bonding for thin semiconductor package |
JP4021378B2 (ja) * | 2003-06-27 | 2007-12-12 | 株式会社新川 | ワイヤボンディング方法 |
US7494042B2 (en) * | 2003-10-02 | 2009-02-24 | Asm Technology Singapore Pte. Ltd. | Method of forming low wire loops and wire loops formed using the method |
US7347352B2 (en) * | 2003-11-26 | 2008-03-25 | Kulicke And Soffa Industries, Inc. | Low loop height ball bonding method and apparatus |
-
2006
- 2006-01-06 US US11/306,678 patent/US7464854B2/en active Active
- 2006-01-09 JP JP2007552160A patent/JP5830204B2/ja active Active
- 2006-01-09 WO PCT/US2006/000540 patent/WO2006081056A2/en active Application Filing
- 2006-01-09 KR KR1020077004372A patent/KR100856994B1/ko active IP Right Grant
- 2006-01-09 KR KR1020087008901A patent/KR100837502B1/ko active IP Right Grant
- 2006-01-09 CN CN2006800005691A patent/CN101193724B/zh active Active
- 2006-01-24 TW TW095102614A patent/TWI337764B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4445633A (en) * | 1982-02-11 | 1984-05-01 | Rockwell International Corporation | Automatic bonder for forming wire interconnections of automatically controlled configuration |
CN1034463A (zh) * | 1988-01-18 | 1989-08-02 | 雷伊化学公司 | 电子元件的互连 |
US6315190B1 (en) * | 1998-06-25 | 2001-11-13 | Kabushiki Kaisha Shinkawa | Wire bonding method |
Non-Patent Citations (2)
Title |
---|
JP平11-219970A 1999.08.10 |
JP平7-130785A 1995.05.19 |
Also Published As
Publication number | Publication date |
---|---|
WO2006081056A3 (en) | 2006-10-12 |
TWI337764B (en) | 2011-02-21 |
KR100837502B1 (ko) | 2008-06-12 |
KR20070088489A (ko) | 2007-08-29 |
CN101193724A (zh) | 2008-06-04 |
US7464854B2 (en) | 2008-12-16 |
KR100856994B1 (ko) | 2008-09-04 |
KR20080036161A (ko) | 2008-04-24 |
TW200633098A (en) | 2006-09-16 |
JP2008529278A (ja) | 2008-07-31 |
WO2006081056A2 (en) | 2006-08-03 |
US20060163331A1 (en) | 2006-07-27 |
JP5830204B2 (ja) | 2015-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101193724B (zh) | 形成低型面线弧的方法 | |
CN101971313B (zh) | 导线环以及形成导线环的方法 | |
JP4344002B1 (ja) | ワイヤボンディング方法 | |
KR100322191B1 (ko) | 와이어 본딩방법 | |
CN103794586A (zh) | 短的和低的回路丝线键合 | |
TW200529397A (en) | Method for producing a wedge-wedge wire connection | |
JP5263042B2 (ja) | 半導体装置、ワイヤボンディング方法およびワイヤボンディング装置 | |
US8063305B2 (en) | Method of forming bends in a wire loop | |
CN102437111B (zh) | 利用线夹制造折点的快速引线成弧方法及装置 | |
TWI345501B (en) | Method for making a wedge wedge wire loop | |
KR100285535B1 (ko) | 와이어본딩방법 | |
US8941249B2 (en) | Low loop wire bonding | |
US6391759B1 (en) | Bonding method which prevents wire sweep and the wire structure thereof | |
JP3830485B2 (ja) | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法 | |
JP2006270096A (ja) | ワイヤ接続を作製する方法 | |
JP2004281488A (ja) | 半導体装置及びその製造方法 | |
WO2017078109A1 (ja) | 半導体装置およびその製造方法 | |
CN103295927A (zh) | 凸点打线焊接方法 | |
JP2007042764A (ja) | バンプ形成方法、バンプ形状または半導体装置 | |
JP4558832B2 (ja) | 半導体装置 | |
JP2010103542A (ja) | 半導体装置 | |
JP2005167054A (ja) | ボンディング方法 | |
KR20040107582A (ko) | 그라운드 본딩 방법 | |
JPH06283539A (ja) | スタッドバンプ形成用のキャピラリ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |