WO2017078109A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- WO2017078109A1 WO2017078109A1 PCT/JP2016/082698 JP2016082698W WO2017078109A1 WO 2017078109 A1 WO2017078109 A1 WO 2017078109A1 JP 2016082698 W JP2016082698 W JP 2016082698W WO 2017078109 A1 WO2017078109 A1 WO 2017078109A1
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Definitions
- the present invention relates to a semiconductor device having a high wire loop and a method for manufacturing the same.
- a wire bonding apparatus that connects a semiconductor chip electrode and a substrate electrode with a wire such as a gold wire is often used.
- a capillary is used as a bonding tool for pressing and bonding a wire to an electrode.
- a bottleneck (stepped cone shape) capillary having a shape in which the tip of the capillary is elongated is used.
- the height of the thinly extending portion (tip) of the tip is higher than the height of the wire to be formed, so that bonding can be suitably performed even when the distance between adjacent wires is narrow (See, for example, FIG. 4 of Patent Document 1).
- a high frequency power device in which an RF transistor, an output compensation circuit, and a pre-matching circuit are connected by a wire loop is used.
- a method for optimizing the characteristics of the high-frequency power device by mutual inductive coupling between the resistance of the wire loop and the resistance and stray capacitance of another wire loop connected to the pre-matching circuit has been proposed. (For example, refer to Patent Document 2).
- an object of the present invention is to stably form a higher wire loop by a capillary.
- the method for manufacturing a semiconductor device of the present invention includes a first ascending step of bonding a wire to a first position on a substrate by a capillary, raising the capillary to a first height while feeding the wire from the capillary, and a first from the first position to the first.
- An arc ascending step in which the capillary is moved upward while moving the wire out of the capillary after the arc is moved toward the second position on the substrate that is separated by a distance, and the wire is bent up and the wire is bent.
- the wire loop having a predetermined height by bonding the wire to the second position, characterized in that formed on the substrate.
- the capillary has a stepped cone shape having a tapered root portion and a tip portion that is thinner than the root portion, and the wire loop has a height from the substrate that is capillary.
- the angle of the inclined portion on the second position side of the wire loop with respect to the virtual perpendicular of the substrate is larger than the spread angle of the outer surface of the root portion with respect to the central axis of the capillary, and the first height is higher than the length of the tip portion. Is 60 to 90% of the height of the wire loop, the first distance is 50 to 80% of the height of the wire loop, and the second distance is 110 to 130% of the height of the wire loop.
- the second height is preferably 160 to 210% of the height of the wire loop.
- the semiconductor device of the present invention is a semiconductor device having a mountain-shaped wire loop of a predetermined height that connects between a first position on the substrate and a second position on the substrate that is separated from the first position by a first distance. Then, after forming the first joint portion formed by joining the wire to the first position with the capillary, the capillary is raised to the first height while feeding the wire from the capillary, and then the first After the circular movement of moving the capillary in a circular arc shape from the position toward the second position, the capillary is moved upward while raising the wire while feeding the wire from the capillary, and then the capillary is moved by a second distance longer than the first distance.
- a top portion formed by looping the Yapirari to the second position characterized in that it comprises a second joint formed by bonding the wire to the second position.
- a plurality of arc movements for moving the capillary in an arc shape from the first position toward the second position and an upward movement for raising the capillary while feeding the wire from the capillary after the arc movement It is also preferable that it is formed by performing the process once.
- the capillary has a stepped conical shape having a tapered root portion and a tip portion thinner than the root portion, and the wire loop has a height from the substrate at the tip of the capillary.
- the angle of the inclined portion on the second position side of the wire loop with respect to the virtual perpendicular of the substrate is larger than the spread angle of the outer surface of the root portion with respect to the central axis of the capillary, and the first height is 60 to 90% of the height of the wire loop, the first distance is 50 to 80% of the height of the wire loop, the second distance is 110 to 130% of the height of the wire loop,
- the 2 height is preferably 160 to 210% of the height of the wire loop.
- a higher wire loop can be stably formed by a capillary.
- the capillary 20 has a stepped cone shape having a tapered root portion 21 and a tip portion 22 narrower than the root portion 21.
- a corner portion 26 is formed between the root portion 21 and the tip portion 22.
- the upper side of the corner portion 26 is the root portion 21, and the lower side of the corner portion 26 is the tip portion 22. Therefore, the length of the front portion 22 is the length D1 shown in FIG.
- the base portion 21 and the tip portion 22 are provided with holes through which wires are inserted.
- the capillary 20 is moved to and away from the substrate 10 in the vertical direction and moved in the horizontal direction by a bonding head of a wire bonding apparatus (not shown).
- the wire loop 30 is formed by bonding the wire extending from the tip 23 of the tip 22 to the substrate 10.
- the spread angle of the outer surface of the root portion 21 with respect to the central axis 25 is an angle ⁇ 0.
- the angle ⁇ 0 is in the range of 5 ° to 15 °, and more preferably in the range of 6 ° to 8 °.
- the alternate long and short dash line indicates the capillary 20 when the formation of the wire loop 30 is started, and the solid line indicates the position of the capillary 20 when the formation of the wire loop 30 is completed.
- the shaft 25 is located on the same plane as the vertical plane including the wire loop 30.
- the direction from the second position 14 to the first position 13 is a first direction, and the direction from the first position 13 to the second position 14 is a second direction. The same applies to the other drawings.
- the wire loop 30 shown in FIG. 1 connects between the first electrode 11 formed on the substrate 10 by the wire and the second electrode 12 formed on the substrate 10 and spaced from the first electrode 11 by a distance L5.
- the wire loop 30 includes a first joining portion 16 formed on the first electrode 11, a first inclined portion 31 on the first electrode side, a second inclined portion 33 on the second electrode side, a top portion 32, And a second joint portion 17 formed on the second electrode 12.
- the height of the top 32 from the substrate 10 (the height of the wire loop 30) is D2 higher than the length D1 of the tip 22 of the capillary 20.
- the height D2 of the wire loop 30 is in the range of 500 ⁇ m to 3000 ⁇ m, and more preferably 700 ⁇ m to 1600 ⁇ m.
- the center of the first electrode 11 is the first position 13 where the central axis 25 of the capillary 20 comes when the wire is bonded to the first electrode 11, and the center of the second electrode 12 is the wire to the second electrode 12.
- the distance between the first position 13 and the second position 14 is the distance L5 as in the first electrode 11 and the second electrode 12, and the distance L5 is 50 to 80% of the height D2 of the wire loop 30. It is.
- the ratio of the distance L5 to the height D2 of the wire loop 30 is 50%, 55%, 60%, 65%, 70%, 75%, and 80%. It may be within two ranges.
- the angle of the first inclined part 31 with respect to the virtual perpendicular 15 perpendicular to the surface of the substrate 10 is an angle ⁇ 1
- the angle of the second inclined part 33 with respect to the virtual perpendicular 15 is an angle ⁇ 2.
- Both the angles ⁇ 1 and ⁇ 2 are larger than the angle ⁇ 0 of the root portion 21 of the capillary 20.
- ⁇ 1 and ⁇ 2 are approximately the same size, but may not be the same size as long as the angle is larger than the angle ⁇ 0 of the root portion 21.
- the angle ⁇ 1 and the angle ⁇ 2 are in the range of 10 ° to 40 °, and more preferably in the range of 15 ° to 30 °.
- the wire loop 30 has not yet been formed, so the distance between the capillary 20 and the wire loop 30 does not matter.
- the tip 23 of the capillary 20 descends to the surface of the second electrode 12 to bond the wire to the second electrode 12 and the formation of the wire loop 30 is completed, The distance between 30 and the surface of the capillary 20 is the smallest.
- the angle ⁇ 0 of the root portion 21 of the capillary 20 shown by the solid line in FIG. 1 is smaller than the angle ⁇ 2 of the second inclined portion 33 of the wire loop 30. Therefore, even when the formation of the wire loop 30 is finished, the surface of the root portion 21 does not contact the second inclined portion 33 and there is a slight gap.
- the wire loop 30 is formed in parallel with a narrow pitch P in the width direction.
- a wire loop 30 indicated by a solid line indicates a wire loop 30 that has been bonded
- a one-dot chain line indicates a wire loop 30 that is to be bonded from now on.
- the capillary 20 in FIG. 2 is in a state in which the bonding of the wire loop 30 indicated by the solid line is completed and the bonding of the next wire loop 30 indicated by the alternate long and short dash line is started.
- the center axis 25 of the capillary 20 is on the first electrode 11 of the wire loop 30 indicated by a one-dot chain line, and the tip 23 presses the wire against the first electrode 11. Therefore, the central axis 25 of the capillary 20 is shifted in the width direction by a pitch P from a vertical plane including the wire loop 30 indicated by a solid line.
- the hatched portion 27 of the capillary 20 shows a cross section when the capillary 20 is cut along a vertical plane including the wire loop 30 indicated by a solid line. As shown in FIG. 2, the first inclined portion 31 of the wire loop 30 indicated by the solid line is separated from the hatching portion 27 of the capillary 20. Therefore, when the bonding of the wire loop 30 indicated by the one-dot chain line is started, the capillary 20 does not come into contact with the adjacent wire loop 30 indicated by the solid line after the bonding.
- the capillary 20 is bonded to the wire loop 30 bonded at the end of bonding.
- the surface of the capillary 20 does not come into contact with the adjacent wire loop 30 after the bonding at the start of bonding.
- the wire loop 30 is inclined in the second direction as shown in FIG. Therefore, the angle ⁇ 3 of the second inclined portion 33 with respect to the virtual perpendicular 15 becomes smaller than the angle ⁇ 0 of the root portion 21 of the capillary 20, and the surface of the root portion 21 of the capillary 20 and the second inclined portion 33 and Will come into contact.
- the wire loop 30 is swelled in the first direction, the base portion 21 of the capillary 20 is started when bonding of the next wire loop 30 indicated by a one-dot chain line is started.
- the shape of the wire loops 30 is stabilized so as to have the shape shown in FIGS. It is necessary to move the tip 23.
- the wire loop 30 is driven by driving the bonding head by the controller of the wire bonding apparatus (semiconductor manufacturing apparatus) and moving the tip 23 of the capillary 20 along a special locus as shown in FIG.
- the shape is stable as shown in FIGS.
- the control unit is a computer that internally includes a CPU, an operation program, operation data, and the like.
- L1 to L5 indicate distances from the first position 13.
- the control unit bonds the wire to the first position 13 of the substrate 10 with the tip 23 to form the first joint 16, and then extends the tip 23 to the point 51 while feeding the wire from the tip 23.
- Raise first ascending step.
- the height H1 (first height) of the point 51 is 60 to 90% of the height D2 of the wire loop 30.
- the ratio of the height H1 of the point 51 to the height D2 of the wire loop 30 is specifically 60%, 65%, 70%, 75%, 80%, 85%, 90%. It may be within any two ranges of the ratio.
- the control unit moves the tip 23 in a circular arc shape from the point 51 in the second direction to the point 52, and then moves up the tip 23 to the point 53 while feeding the wire from the tip 23. I do.
- a second arc ascending step 62 is performed in which the wire is lifted up to the point 55 while being fed from the tip 23.
- a third arc raising process 63 is performed in which the wire is drawn from the tip 23 and raised to the point 57 (arc raising step 63). Process).
- the control unit moves the tip 23 from the point 51 to the point 57 by the distance L3 in the second direction and raises it by the height H2 in three arc raising steps 61 to 63.
- the distance L3 is a distance of 50 to 70% of the height D2 of the wire loop 30
- the height H2 is a distance of 20 to 40% of the height D2 of the wire loop 30.
- the ratio of the distance L3 to the height D2 of the wire loop 30 is 50%, 55%, 60%, 65%, and 70%, and is within the range of any two of these ratios. May be.
- the ratio of the height H2 to the height D2 of the wire loop 30 is specifically 20%, 25%, 30%, 35%, and 40%, and within any two ranges of these ratios There may be.
- the wire loop 30 is inclined in the second direction or the first direction, or as described with reference to FIG. The shape of the wire loop 30 is prevented from expanding outward.
- control unit has been described as performing the arc-raising steps 61 to 63 three times.
- the tip 23 is moved from the point 51 to the point 57 in one or two arc-raising steps. While moving in the direction by the distance L3, it may be raised by the height H2. Further, the control unit may raise the tip 23 by a distance L3 and a height H2 in the second direction by four or more arc raising steps.
- the control unit moves the tip 23 from the point 57 to the point 58 on the arc in the first direction by a distance (L3 + L4) (arc moving process).
- the distance (L3 + L4) is 110 to 130% of the height D2 of the wire loop 30.
- This operation defines the bending radius of the top portion 32 of the wire loop 30 shown in FIG. 1.
- the distance (L3 + L4) becomes longer, the bending radius of the top portion 32 becomes smaller, and when the distance (L3 + L4) becomes shorter, Bending radius increases.
- the point 58 becomes the top 32 of the wire loop 30.
- the control unit raises the tip 23 by the height H3 while feeding the wire from the tip 23 from the point 58 to the point 59 (second ascending step).
- This height H3 is a distance of 100 to 120% of the height D2 of the wire loop 30.
- the ratio of the height H3 to the height D2 of the wire loop 30 is specifically 100%, 105%, 110%, 115%, and 120%, and within any two of these ratios There may be.
- the height H4 of the point 59 from the surface of the substrate 10 is 160 to 210% of the height D2 of the wire loop 30.
- This height H4 is the second height.
- the tip 23 is looped in a circular arc shape from the point 59 to the second position 14 (looping process), and a wire is bonded to the second position 14 to form the second joint portion 17.
- the angle ⁇ 1 and the angle ⁇ 2 can be made smaller than the angle ⁇ 0. Therefore, it can suppress that the capillary 20 contacts the wire loop 30 at the time of bonding. Therefore, the high wire loop 30 can be stably formed.
- the bending radius of the top portion 32 is reduced by increasing the moving distance (L3 + L4) from the point 57 to the point 58, and as shown in FIG.
- the angle ⁇ 5 with respect to the virtual perpendicular 15 may be larger than the angle ⁇ 2 of the second inclined portion 33 described above with reference to FIG.
- the difference between the angle ⁇ 5 and the angle ⁇ 0 of the root portion 21 is larger than that of the embodiment described above with reference to FIGS. 1 and 2, and the contact with the second inclined portion 33 of the wire loop 30 occurs more. Absent.
- FIG. 6 shows the capillary 20 when the formation of the wire loop 30 is started.
- the capillary 20 is located on a vertical plane including the wire loop 30.
- a gap is opened between the surface of the root portion 21 of the capillary 20 indicated by the alternate long and short dash line and the first inclined portion 31.
- the first inclined portion 31 of the adjacent wire loop 30 in which bonding is completed and the surface of the base portion 21 of the capillary 20 indicated by the alternate long and short dash line in FIG. 6 is further away from the case shown in FIG. Therefore, when the bonding of the wire loop 30 is started, the capillary 20 does not come into contact with the wire loop 30 indicated by the solid line after the adjacent bonding.
- the angle ⁇ 2 can be further increased. Therefore, it is possible to suppress the surface of the capillary 20 from coming into contact with the bonded wire loop 30 at the end of bonding. Further, by providing the kink 35, it is possible to more effectively suppress the surface of the capillary 20 from coming into contact with the adjacent wire loop 30 after bonding at the start of bonding. Therefore, the shape of the high wire loop 30 can be formed more stably.
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Abstract
Description
Claims (6)
- 半導体装置の製造方法であって、
キャピラリにより基板上の第1位置にワイヤをボンディングし、
前記キャピラリから前記ワイヤを繰り出しながら前記キャピラリを第1高さまで上昇させる第1上昇工程と、
前記第1位置から第1距離だけ離間した基板上の第2位置の方向に向かって前記キャピラリを円弧状に移動させる円弧移動の後に前記キャピラリから前記ワイヤを繰り出しながら前記キャピラリを上昇させる上昇移動を行って前記ワイヤに曲げ癖をつける円弧上昇工程と、
前記キャピラリを前記第1距離よりも長い第2距離だけ前記第1位置の方向に向かって円弧状に移動させる円弧移動工程と、
前記キャピラリから前記ワイヤを繰り出しながら前記第1高さより高い第2高さまで前記キャピラリを上昇させる第2上昇工程と、
前記キャピラリを前記第2位置までルーピングするルーピング工程と、を含み、
前記第2位置に前記ワイヤをボンディングすることで所定の高さを有するワイヤループを基板上に形成することを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法であって、
前記円弧上昇工程を複数回行うこと、を特徴とする半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法であって、
前記キャピラリは、テーパー形の根元部と、前記根元部よりも細い先部と、を有する段付円錐形状であり、
前記ワイヤループは、基板からの高さが前記キャピラリの先部の長さよりも高い山形形状であり、基板の仮想垂線に対する前記ワイヤループの第2位置側の傾斜部の角度は、前記キャピラリの中心軸に対する前記根元部の外面の広がり角度よりも大きく、
前記第1高さは、前記ワイヤループの高さの60~90%であり、
前記第1距離は、前記ワイヤループの高さの50~80%であり、
前記第2距離は、前記ワイヤループの高さの110~130%であり、
前記第2高さは、前記ワイヤループの高さの160~210%であること、
を特徴とする半導体装置の製造方法。 - 基板上の第1位置と前記第1位置から第1距離だけ離間した基板上の第2位置との間を接続する所定高さの山形のワイヤループを有する半導体装置であって、
キャピラリによってワイヤを前記第1位置に接合することにより形成される第1接合部と、
前記第1接合部を形成後、前記キャピラリから前記ワイヤを繰り出しながら前記キャピラリを第1高さまで上昇させ、その後、前記第1位置から前記第2位置の方向に向かって前記キャピラリを円弧状に移動させる円弧移動の後に前記キャピラリから前記ワイヤを繰り出しながら前記キャピラリを上昇させる上昇移動を行った後、前記キャピラリを前記第1距離よりも長い第2距離だけ前記第1位置の方向に向かって円弧状に移動させ、その後、前記キャピラリから前記ワイヤを繰り出しながら前記第1高さより高い第2高さまで上昇させた後に前記キャピラリを前記第2位置までルーピングさせることによって形成される頂部と、
前記第2位置に前記ワイヤをボンディングすることにより形成される第2接合部と、を備えることを特徴とする半導体装置。 - 請求項4に記載の半導体装置であって、
前記第1位置から前記第2位置の方向に向かって前記キャピラリを円弧状に移動させる前記円弧移動と、前記円弧移動の後に前記キャピラリから前記ワイヤを繰り出しながら前記キャピラリを上昇させる上昇移動とをそれぞれ複数回行うことによって形成されることを特徴とする半導体装置。 - 請求項4または5に記載の半導体装置であって、
前記キャピラリは、テーパー形の根元部と、前記根元部よりも細い先部と、を有する段付円錐形状であり、
前記ワイヤループは、基板からの高さが前記キャピラリの先部の長さよりも高い山形形状であり、基板の仮想垂線に対する前記ワイヤループの第2位置側の傾斜部の角度は、前記キャピラリの中心軸に対する前記根元部の外面の広がり角度よりも大きく、
前記第1高さは、前記ワイヤループの高さの60~90%であり、
前記第1距離は、前記ワイヤループの高さの50~80%であり、
前記第2距離は、前記ワイヤループの高さの110~130%であり、
前記第2高さは、前記ワイヤループの高さの160~210%であること、
を特徴とする半導体装置。
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