CN101192704B - 天线及具有该天线的半导体装置 - Google Patents
天线及具有该天线的半导体装置 Download PDFInfo
- Publication number
- CN101192704B CN101192704B CN200710196086XA CN200710196086A CN101192704B CN 101192704 B CN101192704 B CN 101192704B CN 200710196086X A CN200710196086X A CN 200710196086XA CN 200710196086 A CN200710196086 A CN 200710196086A CN 101192704 B CN101192704 B CN 101192704B
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- Prior art keywords
- conductor
- antenna
- film
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
- H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
Landscapes
- Details Of Aerials (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006324370 | 2006-11-30 | ||
| JP2006324370 | 2006-11-30 | ||
| JP2006-324370 | 2006-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101192704A CN101192704A (zh) | 2008-06-04 |
| CN101192704B true CN101192704B (zh) | 2013-03-13 |
Family
ID=39475116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710196086XA Expired - Fee Related CN101192704B (zh) | 2006-11-30 | 2007-11-30 | 天线及具有该天线的半导体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7605761B2 (enExample) |
| JP (1) | JP4944745B2 (enExample) |
| CN (1) | CN101192704B (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9064198B2 (en) | 2006-04-26 | 2015-06-23 | Murata Manufacturing Co., Ltd. | Electromagnetic-coupling-module-attached article |
| US8235299B2 (en) | 2007-07-04 | 2012-08-07 | Murata Manufacturing Co., Ltd. | Wireless IC device and component for wireless IC device |
| JP5104865B2 (ja) | 2007-07-18 | 2012-12-19 | 株式会社村田製作所 | 無線icデバイス |
| WO2009110381A1 (ja) * | 2008-03-03 | 2009-09-11 | 株式会社村田製作所 | 無線icデバイス及び無線通信システム |
| EP2840648B1 (en) | 2008-05-21 | 2016-03-23 | Murata Manufacturing Co., Ltd. | Wireless IC device |
| EP2290586B1 (en) * | 2008-05-26 | 2014-06-25 | Murata Manufacturing Co., Ltd. | Wireless ic device system and method for authenticating wireless ic device |
| US8164529B2 (en) | 2008-10-20 | 2012-04-24 | Harris Corporation | Loop antenna including impedance tuning gap and associated methods |
| CN104362424B (zh) | 2008-11-17 | 2018-09-21 | 株式会社村田制作所 | 无线通信设备 |
| JP5041075B2 (ja) | 2009-01-09 | 2012-10-03 | 株式会社村田製作所 | 無線icデバイスおよび無線icモジュール |
| JP5267578B2 (ja) | 2009-01-30 | 2013-08-21 | 株式会社村田製作所 | アンテナ及び無線icデバイス |
| KR101074596B1 (ko) * | 2009-03-10 | 2011-10-17 | 엘에스산전 주식회사 | 금속 부착용 rfid 태그 |
| WO2010119854A1 (ja) | 2009-04-14 | 2010-10-21 | 株式会社村田製作所 | 無線icデバイス用部品及び無線icデバイス |
| CN102405556B (zh) | 2009-04-21 | 2013-04-10 | 株式会社村田制作所 | 天线装置及其谐振频率设定方法 |
| CN102577646B (zh) | 2009-09-30 | 2015-03-04 | 株式会社村田制作所 | 电路基板及其制造方法 |
| JP5304580B2 (ja) | 2009-10-02 | 2013-10-02 | 株式会社村田製作所 | 無線icデバイス |
| JP5327334B2 (ja) | 2009-11-04 | 2013-10-30 | 株式会社村田製作所 | 通信端末及び情報処理システム |
| CN104617374B (zh) | 2009-11-20 | 2018-04-06 | 株式会社村田制作所 | 移动通信终端 |
| WO2011108340A1 (ja) | 2010-03-03 | 2011-09-09 | 株式会社村田製作所 | 無線通信モジュール及び無線通信デバイス |
| WO2011111509A1 (ja) | 2010-03-12 | 2011-09-15 | 株式会社村田製作所 | 無線通信デバイス及び金属製物品 |
| CN102668241B (zh) | 2010-03-24 | 2015-01-28 | 株式会社村田制作所 | Rfid系统 |
| JP5630499B2 (ja) | 2010-03-31 | 2014-11-26 | 株式会社村田製作所 | アンテナ装置及び無線通信デバイス |
| WO2012002998A1 (en) * | 2010-07-01 | 2012-01-05 | Sensormatic Electronics, LLC | Wide bandwidth hybrid antenna for combination eas and rfid label or tag |
| GB2495418B (en) | 2010-07-28 | 2017-05-24 | Murata Manufacturing Co | Antenna apparatus and communication terminal instrument |
| WO2012020748A1 (ja) | 2010-08-10 | 2012-02-16 | 株式会社村田製作所 | プリント配線板及び無線通信システム |
| CN103038939B (zh) | 2010-09-30 | 2015-11-25 | 株式会社村田制作所 | 无线ic器件 |
| WO2012050037A1 (ja) | 2010-10-12 | 2012-04-19 | 株式会社村田製作所 | アンテナ装置および通信端末装置 |
| WO2012053412A1 (ja) | 2010-10-21 | 2012-04-26 | 株式会社村田製作所 | 通信端末装置 |
| CN103119785B (zh) | 2011-01-05 | 2016-08-03 | 株式会社村田制作所 | 无线通信器件 |
| JP5304956B2 (ja) | 2011-01-14 | 2013-10-02 | 株式会社村田製作所 | Rfidチップパッケージ及びrfidタグ |
| US8164532B1 (en) * | 2011-01-18 | 2012-04-24 | Dockon Ag | Circular polarized compound loop antenna |
| CN104899639B (zh) | 2011-02-28 | 2018-08-07 | 株式会社村田制作所 | 无线通信器件 |
| WO2012121185A1 (ja) | 2011-03-08 | 2012-09-13 | 株式会社村田製作所 | アンテナ装置及び通信端末機器 |
| JP5273326B2 (ja) | 2011-04-05 | 2013-08-28 | 株式会社村田製作所 | 無線通信デバイス |
| WO2012141070A1 (ja) | 2011-04-13 | 2012-10-18 | 株式会社村田製作所 | 無線icデバイス及び無線通信端末 |
| WO2012157596A1 (ja) | 2011-05-16 | 2012-11-22 | 株式会社村田製作所 | 無線icデバイス |
| KR101338173B1 (ko) | 2011-07-14 | 2013-12-06 | 가부시키가이샤 무라타 세이사쿠쇼 | 무선 통신 디바이스 |
| DE112012001977T5 (de) | 2011-07-15 | 2014-02-20 | Murata Manufacturing Co., Ltd. | Funkkommunikationsvorrichtung |
| CN203850432U (zh) | 2011-07-19 | 2014-09-24 | 株式会社村田制作所 | 天线装置以及通信终端装置 |
| JP5418737B2 (ja) | 2011-09-09 | 2014-02-19 | 株式会社村田製作所 | アンテナ装置および無線デバイス |
| KR20130031568A (ko) * | 2011-09-21 | 2013-03-29 | 한국전자통신연구원 | 무선 통신 안테나 및 무선 통신 장치 |
| JP5344108B1 (ja) | 2011-12-01 | 2013-11-20 | 株式会社村田製作所 | 無線icデバイス及びその製造方法 |
| CN103430382B (zh) | 2012-01-30 | 2015-07-15 | 株式会社村田制作所 | 无线ic器件 |
| WO2013125610A1 (ja) | 2012-02-24 | 2013-08-29 | 株式会社村田製作所 | アンテナ装置および無線通信装置 |
| WO2013153697A1 (ja) | 2012-04-13 | 2013-10-17 | 株式会社村田製作所 | Rfidタグの検査方法及び検査装置 |
| US9059512B2 (en) * | 2012-09-24 | 2015-06-16 | Electronics And Telecommunications Research Institute | Radio communication antenna and radio communication device |
| CN103346383B (zh) * | 2013-06-28 | 2016-03-02 | 华为终端有限公司 | 环形天线组件及具有该环形天线组件的电子设备 |
| US9542638B2 (en) * | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
| WO2016090638A1 (en) * | 2014-12-12 | 2016-06-16 | Hong Kong R&D Centre for Logistics and Supply Chain Management Enabling Technologies Limited | Dipole antenna for radio frequency identification (rfid) tag |
| CN106709555A (zh) * | 2016-12-12 | 2017-05-24 | 广西大学 | 超薄小型内嵌式耐高温电子标签的生产方法 |
| JP6963274B2 (ja) * | 2017-08-07 | 2021-11-05 | アルプスアルパイン株式会社 | 電力変換装置、及び、折返しダイポールアンテナ |
| CN108232400A (zh) * | 2017-12-31 | 2018-06-29 | 福建省卓展信息科技股份有限公司 | 天线及其智能眼镜 |
| JP7156815B2 (ja) * | 2018-05-02 | 2022-10-19 | ラピスセミコンダクタ株式会社 | アンテナ及び半導体装置 |
| DE112019004569T5 (de) * | 2019-06-14 | 2021-05-27 | Aselsan Elektroni̇k Sanayi̇ Ve Ti̇caret Anoni̇m Şi̇rketi̇ | Ein substrat für eine breitband-quasi-yagi-antenne |
| JP7610837B2 (ja) * | 2021-03-30 | 2025-01-09 | Nes株式会社 | Icタグ |
| US12223114B2 (en) | 2021-06-24 | 2025-02-11 | Beijing Boe Technology Development Co., Ltd. | Interactive control apparatus and interactive system |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3431045B2 (ja) | 1995-01-18 | 2003-07-28 | 久松 中野 | 円偏波ループアンテナ |
| JP3982918B2 (ja) | 1998-08-07 | 2007-09-26 | 日本アンテナ株式会社 | 小型受信機 |
| AU775854B2 (en) * | 2000-07-04 | 2004-08-19 | Credipass Co., Ltd. | Passive transponder identification system and credit-card type transponder |
| JP2002185238A (ja) * | 2000-12-11 | 2002-06-28 | Sony Corp | デュアルバンド対応内蔵アンテナ装置およびこれを備えた携帯無線端末 |
| JP2004186931A (ja) * | 2002-12-03 | 2004-07-02 | Ngk Spark Plug Co Ltd | 複数の周波数帯に対応可能なアンテナ |
| KR100715420B1 (ko) | 2003-08-29 | 2007-05-09 | 후지쓰 텐 가부시키가이샤 | 원편파용 안테나 및 이 안테나를 포함하는 통합안테나 |
| JP4278589B2 (ja) | 2003-08-29 | 2009-06-17 | 富士通テン株式会社 | アンテナ |
| JP2005136573A (ja) * | 2003-10-29 | 2005-05-26 | Asahi Glass Co Ltd | 平面アンテナ |
| JP4494003B2 (ja) * | 2003-12-19 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7109923B2 (en) * | 2004-02-23 | 2006-09-19 | Nokia Corporation | Diversity antenna arrangement |
| JP2005244283A (ja) | 2004-02-24 | 2005-09-08 | Omron Corp | アンテナおよびrfタグ |
| US7271769B2 (en) * | 2004-09-22 | 2007-09-18 | Lenovo (Singapore) Pte Ltd. | Antennas encapsulated within plastic display covers of computing devices |
| US20060202269A1 (en) | 2005-03-08 | 2006-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic appliance having the same |
| JP4330575B2 (ja) * | 2005-03-17 | 2009-09-16 | 富士通株式会社 | タグアンテナ |
| TWI270235B (en) * | 2005-07-08 | 2007-01-01 | Ind Tech Res Inst | High-gain loop antenna |
| AU2006340379A1 (en) * | 2006-03-22 | 2007-09-27 | Powercast Corporation | Method and apparatus for implementation of a wireless power supply |
| US7280074B1 (en) * | 2006-03-30 | 2007-10-09 | Delta Networks, Inc. | Multiple frequency band planar antenna |
-
2007
- 2007-11-13 US US11/979,990 patent/US7605761B2/en not_active Expired - Fee Related
- 2007-11-28 JP JP2007307424A patent/JP4944745B2/ja not_active Expired - Fee Related
- 2007-11-30 CN CN200710196086XA patent/CN101192704B/zh not_active Expired - Fee Related
Also Published As
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|---|---|
| US20080129606A1 (en) | 2008-06-05 |
| JP2008160821A (ja) | 2008-07-10 |
| US7605761B2 (en) | 2009-10-20 |
| JP4944745B2 (ja) | 2012-06-06 |
| CN101192704A (zh) | 2008-06-04 |
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