CN101192001B - 阻焊膜形成方法和感光性组合物 - Google Patents

阻焊膜形成方法和感光性组合物 Download PDF

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Publication number
CN101192001B
CN101192001B CN2007101872549A CN200710187254A CN101192001B CN 101192001 B CN101192001 B CN 101192001B CN 2007101872549 A CN2007101872549 A CN 2007101872549A CN 200710187254 A CN200710187254 A CN 200710187254A CN 101192001 B CN101192001 B CN 101192001B
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alkyl
wavelength
absorbance
phenyl
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CN101192001A (zh
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柴崎阳子
加藤贤治
有马圣夫
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Taiyo Holdings Co Ltd
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Taiyo Holdings Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
CN2007101872549A 2006-11-15 2007-11-15 阻焊膜形成方法和感光性组合物 Active CN101192001B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006309098 2006-11-15
JP2006309098 2006-11-15
JP2006-309098 2006-11-15

Publications (2)

Publication Number Publication Date
CN101192001A CN101192001A (zh) 2008-06-04
CN101192001B true CN101192001B (zh) 2012-01-11

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Country Status (4)

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JP (1) JP5276832B2 (enrdf_load_stackoverflow)
KR (2) KR20080044193A (enrdf_load_stackoverflow)
CN (1) CN101192001B (enrdf_load_stackoverflow)
TW (1) TW200844652A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101338676B1 (ko) * 2008-11-05 2013-12-06 도오꾜오까고오교 가부시끼가이샤 감광성 수지 조성물 및 기재
JP5559976B2 (ja) * 2009-03-24 2014-07-23 太陽ホールディングス株式会社 画像形成方法と光硬化画像、およびその方法に用いる光硬化性組成物
TWI476541B (zh) * 2009-03-24 2015-03-11 Taiyo Holdings Co Ltd Image forming method and photohardenable composition
JP2010230721A (ja) * 2009-03-25 2010-10-14 Fujifilm Corp 感光性組成物、感光性フィルム、及び、永久パターン形成方法
US20150014029A1 (en) * 2011-04-08 2015-01-15 Taiyo Ink MFG. Co. Ltd Photosensitive composition, hardened coating films therefrom, and printed wiring boards using same
JP6003053B2 (ja) * 2011-12-14 2016-10-05 日立化成株式会社 半導体パッケージ用プリント配線板の保護膜用感光性樹脂組成物及び半導体パッケージ
GB201223064D0 (en) * 2012-12-20 2013-02-06 Rainbow Technology Systems Ltd Curable coatings for photoimaging
KR102500912B1 (ko) * 2017-03-01 2023-02-16 아사히 가세이 가부시키가이샤 감광성 수지 조성물
CN110806682B (zh) * 2019-12-05 2024-05-28 中山新诺科技股份有限公司 阻焊线路一体曝光的多光谱数字化曝光方法及系统
KR102210868B1 (ko) * 2020-10-27 2021-02-02 (주)샘씨엔에스 포토 공정을 이용한 세라믹 기판의 제조 방법
CN115135020B (zh) * 2021-03-25 2025-03-21 庆鼎精密电子（淮安）有限公司 曝光系统、电路板及其制备方法、背光板及显示装置
CN113099624A (zh) * 2021-04-06 2021-07-09 浙江欣旺达电子有限公司 一种线路板阻焊层的制作方法
CN115460790A (zh) * 2022-08-25 2022-12-09 台山市精诚达电路有限公司 一种线路板阻焊层制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1360685A (zh) * 1999-07-12 2002-07-24 太阳油墨制造株式会社 碱显影型光固化性组合物及使用该组合物所得的烧成物图案
CN1717428A (zh) * 2002-11-28 2006-01-04 太阳油墨制造株式会社 光固化性和热固化性树脂组合物以及使用该组合物的印刷电路板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60234095D1 (de) * 2001-06-11 2009-12-03 Basf Se Oxim ester photoinitiatoren mit kombinierter struktur
JP2004133140A (ja) * 2002-10-09 2004-04-30 Ngk Spark Plug Co Ltd プリント配線板用着色樹脂組成物及びそれを用いたプリント配線板
US7622243B2 (en) * 2003-09-24 2009-11-24 Hitachi Chemical Company, Ltd. Photosensitive element, resist pattern formation method and printed wiring board production method
JP2005128412A (ja) * 2003-10-27 2005-05-19 Mitsubishi Chemicals Corp 画像形成材及びそれを用いた画像形成方法
JP4489566B2 (ja) * 2003-11-27 2010-06-23 太陽インキ製造株式会社 硬化性樹脂組成物、その硬化物、およびプリント配線板
JPWO2006004158A1 (ja) * 2004-07-07 2008-04-24 太陽インキ製造株式会社 光硬化性・熱硬化性樹脂組成物とそれを用いたドライフィルム、及びその硬化物
JP4410134B2 (ja) * 2005-03-24 2010-02-03 日立ビアメカニクス株式会社 パターン露光方法及び装置
JP2007058196A (ja) * 2005-07-25 2007-03-08 Fujifilm Holdings Corp 画像記録装置及び方法
JP2007033882A (ja) * 2005-07-27 2007-02-08 Hitachi Via Mechanics Ltd 露光装置及び露光方法並びに配線基板の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1360685A (zh) * 1999-07-12 2002-07-24 太阳油墨制造株式会社 碱显影型光固化性组合物及使用该组合物所得的烧成物图案
CN1717428A (zh) * 2002-11-28 2006-01-04 太阳油墨制造株式会社 光固化性和热固化性树脂组合物以及使用该组合物的印刷电路板

Also Published As

Publication number Publication date
TWI360022B (enrdf_load_stackoverflow) 2012-03-11
KR101008424B1 (ko) 2011-01-14
KR20080044193A (ko) 2008-05-20
CN101192001A (zh) 2008-06-04
JP2008146045A (ja) 2008-06-26
TW200844652A (en) 2008-11-16
JP5276832B2 (ja) 2013-08-28
KR20100038185A (ko) 2010-04-13

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Application publication date: 20080604

Assignee: TAIYO INK (SUZHOU) Co.,Ltd.

Assignor: TAIYO HOLDINGS Co.,Ltd.

Contract record no.: 2011990000116

Denomination of invention: Welding-proof film forming method and photosensitive composition

Granted publication date: 20120111

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Contract record no.: X2025990000228

Denomination of invention: Welding-proof film forming method and photosensitive composition

Granted publication date: 20120111

License type: Common License

Record date: 20250609

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