TW200844652A - Process for forming solder resist film and photosensitive composition - Google Patents
Process for forming solder resist film and photosensitive composition Download PDFInfo
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- TW200844652A TW200844652A TW096143195A TW96143195A TW200844652A TW 200844652 A TW200844652 A TW 200844652A TW 096143195 A TW096143195 A TW 096143195A TW 96143195 A TW96143195 A TW 96143195A TW 200844652 A TW200844652 A TW 200844652A
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- carbon atoms
- photosensitive composition
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- 239000000203 mixture Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 56
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 45
- 238000000576 coating method Methods 0.000 claims abstract description 83
- 239000011248 coating agent Substances 0.000 claims abstract description 81
- 238000002835 absorbance Methods 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000001035 drying Methods 0.000 claims abstract description 18
- 239000007864 aqueous solution Substances 0.000 claims abstract description 4
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- 125000000217 alkyl group Chemical group 0.000 claims description 47
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 31
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- 229920001187 thermosetting polymer Polymers 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 14
- 125000005843 halogen group Chemical group 0.000 claims description 13
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
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- 230000001681 protective effect Effects 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- VFNGKCDDZUSWLR-UHFFFAOYSA-M sulfo sulfate Chemical compound OS(=O)(=O)OS([O-])(=O)=O VFNGKCDDZUSWLR-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 230000002618 waking effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Materials For Photolithography (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006309098 | 2006-11-15 |
Publications (2)
Publication Number | Publication Date |
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TW200844652A true TW200844652A (en) | 2008-11-16 |
TWI360022B TWI360022B (enrdf_load_stackoverflow) | 2012-03-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096143195A TW200844652A (en) | 2006-11-15 | 2007-11-15 | Process for forming solder resist film and photosensitive composition |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5276832B2 (enrdf_load_stackoverflow) |
KR (2) | KR20080044193A (enrdf_load_stackoverflow) |
CN (1) | CN101192001B (enrdf_load_stackoverflow) |
TW (1) | TW200844652A (enrdf_load_stackoverflow) |
Families Citing this family (13)
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KR101338676B1 (ko) * | 2008-11-05 | 2013-12-06 | 도오꾜오까고오교 가부시끼가이샤 | 감광성 수지 조성물 및 기재 |
JP5559976B2 (ja) * | 2009-03-24 | 2014-07-23 | 太陽ホールディングス株式会社 | 画像形成方法と光硬化画像、およびその方法に用いる光硬化性組成物 |
TWI476541B (zh) * | 2009-03-24 | 2015-03-11 | Taiyo Holdings Co Ltd | Image forming method and photohardenable composition |
JP2010230721A (ja) * | 2009-03-25 | 2010-10-14 | Fujifilm Corp | 感光性組成物、感光性フィルム、及び、永久パターン形成方法 |
US20150014029A1 (en) * | 2011-04-08 | 2015-01-15 | Taiyo Ink MFG. Co. Ltd | Photosensitive composition, hardened coating films therefrom, and printed wiring boards using same |
JP6003053B2 (ja) * | 2011-12-14 | 2016-10-05 | 日立化成株式会社 | 半導体パッケージ用プリント配線板の保護膜用感光性樹脂組成物及び半導体パッケージ |
GB201223064D0 (en) * | 2012-12-20 | 2013-02-06 | Rainbow Technology Systems Ltd | Curable coatings for photoimaging |
KR102500912B1 (ko) * | 2017-03-01 | 2023-02-16 | 아사히 가세이 가부시키가이샤 | 감광성 수지 조성물 |
CN110806682B (zh) * | 2019-12-05 | 2024-05-28 | 中山新诺科技股份有限公司 | 阻焊线路一体曝光的多光谱数字化曝光方法及系统 |
KR102210868B1 (ko) * | 2020-10-27 | 2021-02-02 | (주)샘씨엔에스 | 포토 공정을 이용한 세라믹 기판의 제조 방법 |
CN115135020B (zh) * | 2021-03-25 | 2025-03-21 | 庆鼎精密电子(淮安)有限公司 | 曝光系统、电路板及其制备方法、背光板及显示装置 |
CN113099624A (zh) * | 2021-04-06 | 2021-07-09 | 浙江欣旺达电子有限公司 | 一种线路板阻焊层的制作方法 |
CN115460790A (zh) * | 2022-08-25 | 2022-12-09 | 台山市精诚达电路有限公司 | 一种线路板阻焊层制作方法 |
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KR100671986B1 (ko) * | 1999-07-12 | 2007-01-23 | 타이요 잉크 메뉴펙츄어링 컴퍼니, 리미티드 | 알칼리현상형 광경화성 조성물 및 이를 사용하여 얻을 수 있는 소성물(燒成物) 패턴 |
DE60234095D1 (de) * | 2001-06-11 | 2009-12-03 | Basf Se | Oxim ester photoinitiatoren mit kombinierter struktur |
JP2004133140A (ja) * | 2002-10-09 | 2004-04-30 | Ngk Spark Plug Co Ltd | プリント配線板用着色樹脂組成物及びそれを用いたプリント配線板 |
TW200417294A (en) * | 2002-11-28 | 2004-09-01 | Taiyo Ink Mfg Co Ltd | Photo- and thermo-setting resin composition and printed wiring boards made by using the same |
US7622243B2 (en) * | 2003-09-24 | 2009-11-24 | Hitachi Chemical Company, Ltd. | Photosensitive element, resist pattern formation method and printed wiring board production method |
JP2005128412A (ja) * | 2003-10-27 | 2005-05-19 | Mitsubishi Chemicals Corp | 画像形成材及びそれを用いた画像形成方法 |
JP4489566B2 (ja) * | 2003-11-27 | 2010-06-23 | 太陽インキ製造株式会社 | 硬化性樹脂組成物、その硬化物、およびプリント配線板 |
JPWO2006004158A1 (ja) * | 2004-07-07 | 2008-04-24 | 太陽インキ製造株式会社 | 光硬化性・熱硬化性樹脂組成物とそれを用いたドライフィルム、及びその硬化物 |
JP4410134B2 (ja) * | 2005-03-24 | 2010-02-03 | 日立ビアメカニクス株式会社 | パターン露光方法及び装置 |
JP2007058196A (ja) * | 2005-07-25 | 2007-03-08 | Fujifilm Holdings Corp | 画像記録装置及び方法 |
JP2007033882A (ja) * | 2005-07-27 | 2007-02-08 | Hitachi Via Mechanics Ltd | 露光装置及び露光方法並びに配線基板の製造方法 |
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- 2007-11-15 JP JP2007297037A patent/JP5276832B2/ja active Active
- 2007-11-15 TW TW096143195A patent/TW200844652A/zh unknown
- 2007-11-15 CN CN2007101872549A patent/CN101192001B/zh active Active
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2010
- 2010-04-01 KR KR1020100029722A patent/KR101008424B1/ko active Active
Also Published As
Publication number | Publication date |
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CN101192001B (zh) | 2012-01-11 |
TWI360022B (enrdf_load_stackoverflow) | 2012-03-11 |
KR101008424B1 (ko) | 2011-01-14 |
KR20080044193A (ko) | 2008-05-20 |
CN101192001A (zh) | 2008-06-04 |
JP2008146045A (ja) | 2008-06-26 |
JP5276832B2 (ja) | 2013-08-28 |
KR20100038185A (ko) | 2010-04-13 |
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