KR20080044193A - 솔더 레지스트막 형성 방법 및 감광성 조성물 - Google Patents

솔더 레지스트막 형성 방법 및 감광성 조성물 Download PDF

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Publication number
KR20080044193A
KR20080044193A KR1020070116548A KR20070116548A KR20080044193A KR 20080044193 A KR20080044193 A KR 20080044193A KR 1020070116548 A KR1020070116548 A KR 1020070116548A KR 20070116548 A KR20070116548 A KR 20070116548A KR 20080044193 A KR20080044193 A KR 20080044193A
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KR
South Korea
Prior art keywords
group
carbon atoms
photosensitive composition
absorbance
substituted
Prior art date
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Ceased
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KR1020070116548A
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English (en)
Korean (ko)
Inventor
요꼬 시바사끼
겐지 가또
마사오 아리마
Original Assignee
다이요 잉키 세이조 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 다이요 잉키 세이조 가부시키가이샤 filed Critical 다이요 잉키 세이조 가부시키가이샤
Publication of KR20080044193A publication Critical patent/KR20080044193A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
KR1020070116548A 2006-11-15 2007-11-15 솔더 레지스트막 형성 방법 및 감광성 조성물 Ceased KR20080044193A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006309098 2006-11-15
JPJP-P-2006-00309098 2006-11-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020100029722A Division KR101008424B1 (ko) 2006-11-15 2010-04-01 프린트 배선판의 솔더 레지스트 패턴의 형성 방법

Publications (1)

Publication Number Publication Date
KR20080044193A true KR20080044193A (ko) 2008-05-20

Family

ID=39487065

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070116548A Ceased KR20080044193A (ko) 2006-11-15 2007-11-15 솔더 레지스트막 형성 방법 및 감광성 조성물
KR1020100029722A Active KR101008424B1 (ko) 2006-11-15 2010-04-01 프린트 배선판의 솔더 레지스트 패턴의 형성 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020100029722A Active KR101008424B1 (ko) 2006-11-15 2010-04-01 프린트 배선판의 솔더 레지스트 패턴의 형성 방법

Country Status (4)

Country Link
JP (1) JP5276832B2 (enrdf_load_stackoverflow)
KR (2) KR20080044193A (enrdf_load_stackoverflow)
CN (1) CN101192001B (enrdf_load_stackoverflow)
TW (1) TW200844652A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190104639A (ko) * 2017-03-01 2019-09-10 아사히 가세이 가부시키가이샤 감광성 수지 조성물

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101338676B1 (ko) * 2008-11-05 2013-12-06 도오꾜오까고오교 가부시끼가이샤 감광성 수지 조성물 및 기재
JP5559976B2 (ja) * 2009-03-24 2014-07-23 太陽ホールディングス株式会社 画像形成方法と光硬化画像、およびその方法に用いる光硬化性組成物
TWI476541B (zh) * 2009-03-24 2015-03-11 Taiyo Holdings Co Ltd Image forming method and photohardenable composition
JP2010230721A (ja) * 2009-03-25 2010-10-14 Fujifilm Corp 感光性組成物、感光性フィルム、及び、永久パターン形成方法
US20150014029A1 (en) * 2011-04-08 2015-01-15 Taiyo Ink MFG. Co. Ltd Photosensitive composition, hardened coating films therefrom, and printed wiring boards using same
JP6003053B2 (ja) * 2011-12-14 2016-10-05 日立化成株式会社 半導体パッケージ用プリント配線板の保護膜用感光性樹脂組成物及び半導体パッケージ
GB201223064D0 (en) * 2012-12-20 2013-02-06 Rainbow Technology Systems Ltd Curable coatings for photoimaging
CN110806682B (zh) * 2019-12-05 2024-05-28 中山新诺科技股份有限公司 阻焊线路一体曝光的多光谱数字化曝光方法及系统
KR102210868B1 (ko) * 2020-10-27 2021-02-02 (주)샘씨엔에스 포토 공정을 이용한 세라믹 기판의 제조 방법
CN115135020B (zh) * 2021-03-25 2025-03-21 庆鼎精密电子（淮安）有限公司 曝光系统、电路板及其制备方法、背光板及显示装置
CN113099624A (zh) * 2021-04-06 2021-07-09 浙江欣旺达电子有限公司 一种线路板阻焊层的制作方法
CN115460790A (zh) * 2022-08-25 2022-12-09 台山市精诚达电路有限公司 一种线路板阻焊层制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100671986B1 (ko) * 1999-07-12 2007-01-23 타이요 잉크 메뉴펙츄어링 컴퍼니, 리미티드 알칼리현상형 광경화성 조성물 및 이를 사용하여 얻을 수 있는 소성물(燒成物) 패턴
DE60234095D1 (de) * 2001-06-11 2009-12-03 Basf Se Oxim ester photoinitiatoren mit kombinierter struktur
JP2004133140A (ja) * 2002-10-09 2004-04-30 Ngk Spark Plug Co Ltd プリント配線板用着色樹脂組成物及びそれを用いたプリント配線板
TW200417294A (en) * 2002-11-28 2004-09-01 Taiyo Ink Mfg Co Ltd Photo- and thermo-setting resin composition and printed wiring boards made by using the same
US7622243B2 (en) * 2003-09-24 2009-11-24 Hitachi Chemical Company, Ltd. Photosensitive element, resist pattern formation method and printed wiring board production method
JP2005128412A (ja) * 2003-10-27 2005-05-19 Mitsubishi Chemicals Corp 画像形成材及びそれを用いた画像形成方法
JP4489566B2 (ja) * 2003-11-27 2010-06-23 太陽インキ製造株式会社 硬化性樹脂組成物、その硬化物、およびプリント配線板
JPWO2006004158A1 (ja) * 2004-07-07 2008-04-24 太陽インキ製造株式会社 光硬化性・熱硬化性樹脂組成物とそれを用いたドライフィルム、及びその硬化物
JP4410134B2 (ja) * 2005-03-24 2010-02-03 日立ビアメカニクス株式会社 パターン露光方法及び装置
JP2007058196A (ja) * 2005-07-25 2007-03-08 Fujifilm Holdings Corp 画像記録装置及び方法
JP2007033882A (ja) * 2005-07-27 2007-02-08 Hitachi Via Mechanics Ltd 露光装置及び露光方法並びに配線基板の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190104639A (ko) * 2017-03-01 2019-09-10 아사히 가세이 가부시키가이샤 감광성 수지 조성물
KR20220078729A (ko) * 2017-03-01 2022-06-10 아사히 가세이 가부시키가이샤 감광성 수지 조성물

Also Published As

Publication number Publication date
CN101192001B (zh) 2012-01-11
TWI360022B (enrdf_load_stackoverflow) 2012-03-11
KR101008424B1 (ko) 2011-01-14
CN101192001A (zh) 2008-06-04
JP2008146045A (ja) 2008-06-26
TW200844652A (en) 2008-11-16
JP5276832B2 (ja) 2013-08-28
KR20100038185A (ko) 2010-04-13

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