JP5117623B2 - 光硬化性・熱硬化性樹脂組成物及びその硬化物並びにそれを用いて得られるプリント配線板 - Google Patents
光硬化性・熱硬化性樹脂組成物及びその硬化物並びにそれを用いて得られるプリント配線板 Download PDFInfo
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- JP5117623B2 JP5117623B2 JP2012023511A JP2012023511A JP5117623B2 JP 5117623 B2 JP5117623 B2 JP 5117623B2 JP 2012023511 A JP2012023511 A JP 2012023511A JP 2012023511 A JP2012023511 A JP 2012023511A JP 5117623 B2 JP5117623 B2 JP 5117623B2
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- SQDFHQJTAWCFIB-UHFFFAOYSA-N n-methylidenehydroxylamine Chemical compound ON=C SQDFHQJTAWCFIB-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 125000000466 oxiranyl group Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- WZESLRDFSNLECD-UHFFFAOYSA-N phenyl prop-2-eneperoxoate Chemical compound C=CC(=O)OOC1=CC=CC=C1 WZESLRDFSNLECD-UHFFFAOYSA-N 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical compound OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- AZIQALWHRUQPHV-UHFFFAOYSA-N prop-2-eneperoxoic acid Chemical compound OOC(=O)C=C AZIQALWHRUQPHV-UHFFFAOYSA-N 0.000 description 1
- QCTJRYGLPAFRMS-UHFFFAOYSA-N prop-2-enoic acid;1,3,5-triazine-2,4,6-triamine Chemical compound OC(=O)C=C.NC1=NC(N)=NC(N)=N1 QCTJRYGLPAFRMS-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Images
Classifications
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/31678—Of metal
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- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
本発明の光硬化性・熱硬化性樹脂組成物に含まれるエチレン性不飽和基含有カルボン酸含有樹脂(A)は、分子中にエチレン性不飽和二重結合、及びカルボキシル基を有している公知慣用の樹脂化合物が使用できる。
具体的には、下記に列挙するような樹脂が挙げられる。
(2)グリシジル(メタ)アクリレートや3,4−エポキシシクロヘキシルメチル(メタ)アクリレート等のエポキシ基と不飽和二重結合を有する化合物と、それ以外の不飽和二重結合を有する化合物との共重合体に、(メタ)アクリル酸などの不飽和カルボン酸を反応させ、生成した二級の水酸基に多塩基酸無水物を反応させて得られるエチレン性不飽和基含有カルボン酸含有樹脂、
(3)無水マレイン酸などの不飽和二重結合を有する酸無水物と、それ以外の不飽和二重結合を有する化合物との共重合体に、2−ヒドロキシエチル(メタ)アクリレートなどの水酸基と不飽和二重結合を有する化合物を反応させて得られるエチレン性不飽和基含有カルボン酸含有樹脂、
(4)多官能エポキシ化合物と不飽和モノカルボン酸を反応させ、生成した水酸基に飽和又は不飽和多塩基酸無水物を反応させて得られるエチレン性不飽和基含有カルボン酸含有樹脂、
(5)ポリビニルアルコー誘導体などの水酸基含有ポリマーに、飽和又は不飽和多塩基酸無水物を反応させた後、生成したカルボン酸に一分子中にエポキシ基と不飽和二重結合を有する化合物を反応させて得られる水酸基を有するエチレン性不飽和基含有カルボン酸含有樹脂、
(6)多官能エポキシ化合物と、不飽和モノカルボン酸と、一分子中に少なくとも1個のアルコール性水酸基と、エポキシ基と反応するアルコール性水酸基以外の1個の反応性基を有する化合物との反応生成物に、飽和又は不飽和多塩基酸無水物を反応させて得られるエチレン性不飽和基含有カルボン酸含有樹脂、
(7)一分子中に少なくとも2個のオキセタン環を有する多官能オキセタン化合物に不飽和モノカルボン酸を反応させ、得られた変性オキセタン樹脂中の第一級水酸基に対して飽和又は不飽和多塩基酸無水物を反応させて得られるエチレン性不飽和基含有カルボン酸含有樹脂、及び
(8)多官能エポキシ樹脂に不飽和モノカルボン酸を反応させた後、多塩基酸無水物を反応させて得られるカルボキシル基含有樹脂に、更に、分子中に1個のオキシラン環と1個以上のエチレン性不飽和基を有する化合物を反応させて得られるエチレン性不飽和基含有カルボン酸含有樹脂などが挙げられるが、これらに限定されるものでは無い。
攪拌機、温度計、環流冷却管、滴下ロート及び窒素導入管を備えた2リットルのセパラブルフラスコに、クレゾールノボラック型エポキシ樹脂(日本化薬(株)製、EOCN−104S、軟化点92℃、エポキシ当量220)660g、カルビトールアセテート 421.3g、及びソルベントナフサ 180.6gを導入し、90℃に加熱・攪拌し、溶解した。次に、一旦60℃まで冷却し、アクリル酸 216g、トリフェニルホスフィン4.0g、メチルハイドロキノン1.3gを加えて、100℃で12時間反応させ、酸価が0.2mgKOH/gの反応生成物を得た。これにテトラヒドロ無水フタル酸 241.7gを仕込み、90℃に加熱し、6時間反応させた。これにより、酸価50mgKOH/g、二重結合当量(不飽和基1モル当りの樹脂のg重量)400、重量平均分子量7,000のカルボン酸含有樹脂(A)の溶液を得た。以下、このカルボン酸含有樹脂の溶液を、A−1ワニスと称す。
攪拌機、温度計、環流冷却管、滴下ロート及び窒素導入管を備えた2リットルのセパラブルフラスコに、o−クレゾールノボラック型エポキシ樹脂(エポキシ当量215、1分子中に平均して6個のフェノール核を有する)430gおよびアクリル酸144g(2モル)を仕込んだ。撹拌しつつ120℃まで加熱し、120℃を保ったまま10時間反応を続けた。いったん反応生成物を室温まで冷却し、無水コハク酸190g(1.9モル)を加え、80℃に加熱して4時間反応した。ふたたび、この反応生成物を室温まで冷却した。この生成物固形分の酸価は、139mgKOH/gであった。
攪拌機、温度計、環流冷却管、滴下ロート及び窒素導入管を備えた2リットルのセパラブルフラスコに、クレゾールノボラック型エポキシ樹脂のエピクロンN−680(大日本インキ化学工業(株)製、エポキシ当量=215)215部を入れ、カルビトールアセテート266.5部を加え、加熱溶解した。この樹脂溶液に、重合禁止剤としてハイドロキノン0.05部と、反応触媒としてトリフェニルホスフィン1.0部を加えた。この混合物を85〜95℃に加熱し、アクリル酸72部を徐々に滴下し、24時間反応させた。このエポキシアクリレートに、予めイソホロンジイソシアネートとペンタエリスリトールトリアクリレートを1:1モルで反応させたハーフウレタン208部を徐々に滴下し、60〜70℃で4時間反応させた。このようにして得られた分子中に2個以上のエチレン性不飽和基を有する化合物(D)であるエポキシウレタンアクリレートワニスを、以下D−1ワニスと称す。
<表面硬化性>
前記実施例1〜11、参考例1及び比較例1〜3の光硬化性・熱硬化性樹脂組成物を、ライン/スペースが300/300、銅厚35μmの回路パターン基板をバフロール研磨後、水洗し、乾燥してからスクリーン印刷法により塗布し、80℃の熱風循環式乾燥炉で60分間乾燥させる。乾燥後、最大波長400〜410nmの青紫レーザーを搭載した直接描画装置を用いて露光した。露光パターンは全面露光パターンを使用した。露光量は光硬化性・熱硬化性樹脂組成物上40mJ/cm2となるように活性エネルギー線を照射した。露光後、現像(30℃、0.2MPa、1質量%炭酸ナトリウム水溶液)を60秒で行ってパターンを描き、150℃×60分の熱硬化をすることにより硬化塗膜を得た。
実施例1〜11、参考例1及び比較例1〜3の光硬化性・熱硬化性の樹脂組成物を、ライン/スペースが300/300、銅厚50μmの回路パターン基板をバフロール研磨後、水洗し、乾燥してからスクリーン印刷法により塗布し、80℃の熱風循環式乾燥炉で30分間乾燥させる。乾燥後、波長405nmの青紫レーザーを搭載した直接描画装置を用いて露光した。露光パターンは、スペース部に20/30/40/50/60/70/80/90/100μmのラインを描画させるパターンを使用した。露光量は、上記最適露光量評価によって得られた露光量とした。露光後、炭酸ナトリウム水溶液によって現像を行ってパターンを形成し、高圧水銀灯で1000mJ/cm2の紫外線照射後、150℃,60分の熱硬化をすることにより硬化塗膜を得た。硬化塗膜の設計値100μmライン部のクロスセクションを観察した。
B評価:耐現像性不足等による表面層の食われ発生
C評価:アンダーカット状態
D評価:ハレーション等による線太り発生
E評価:表面層の線太りとアンダーカットが発生
<適正露光量>
実施例1〜11、参考例1及び比較例1〜3の光硬化性・熱硬化性樹脂組成物を、各評価基板の全面にスクリーン印刷により塗布した。その後、熱風循環式乾燥機で乾燥した後の塗膜に50〜130μmのラインのネガパターンをのせて波長405nmの青紫レーザーを搭載した直接描画装置を用いて露光した。その後、1.0質量%炭酸ナトリウム水溶液で60秒間現像処理した。この時60μmの解像性が得られた最も少ない露光量を、適正露光量とした。
吸光度の測定には、紫外可視分光光度計(日本分光株式会社製 Ubest−V−570DS)、及び積分球装置(日本分光株式会社製 ISN−470)を使用した。実施例1〜11、参考例1及び比較例1〜3の光硬化性・熱硬化性の樹脂組成物をガラス板にアプリケーター塗布後、熱風循環式乾燥炉を用いて80℃,30分乾燥し、光硬化性・熱硬化性の樹脂組成物の乾燥塗膜をガラス板上に作製した。紫外可視分光光度計及び積分球装置を用いて、光硬化性・熱硬化性の樹脂組成物を塗布したガラス板と同一のガラス板で、500〜300nmにおける吸光度ベースラインを測定した。作製した乾燥塗膜付きガラス板の吸光度を測定し、ベースラインから乾燥塗膜の吸光度を算出でき、目的の光の波長405nmにおける吸光度を得た。塗布膜厚のずれによる吸光度のずれを防ぐため、この作業をアプリケーターによる塗布厚を4段階に変えて行い、塗布厚と405nmにおける吸光度のグラフを作成し、その近似式から膜厚25μmの乾燥塗膜の吸光度を算出して、それぞれの吸光度とした。
Claims (10)
- 前記光重合開始剤(C)が、下記一般式(III)で表されるオキシムエステル系光重合開始剤、下記一般式(IV)で表されるアミノアセトフェノン系光重合開始剤、下記一般式(V)で表されるアシルホスフィンオキサイド系光重合開始剤、及び下記一般式(VI)で表されるチタノセン系光重合開始剤からなる群から選ばれた1種以上の光重合開始剤であることを特徴とする請求項1又は2に記載の光硬化性・熱硬化性樹脂組成物。
- 更に、(G)ジアルキルアミノベンゾフェノン及び/又は(H)チオキサントン系化合物を含むことを特徴とする請求項1乃至4のいずれか一項に記載の光硬化性・熱硬化性樹脂組成物。
- 請求項1乃至5のいずれか一項に記載の光硬化性・熱硬化性組成物を、有機溶剤で希釈して、塗布・乾燥して得られる塗膜の膜厚25μmあたりの吸光度が、405nmにおいて、0.3〜1.5であることを特徴とする光硬化性・熱硬化性樹脂組成物。
- 請求項1乃至6のいずれか一項に記載の光硬化性・熱硬化性樹脂組成物を、キャリアフィルムに塗布・乾燥して得られる光硬化性・熱硬化性のドライフィルム。
- 請求項1乃至6のいずれか一項に記載の光硬化性・熱硬化性樹脂組成物、又は請求項7記載のドライフィルムを、銅上にて光硬化して得られる硬化物。
- 請求項1乃至6のいずれか一項に記載の光硬化性・熱硬化性樹脂組成物、又は請求項7記載のドライフィルムを、波長が400〜410nmのレーザー光によって光硬化して得られる硬化物。
- 請求項1乃至6のいずれか一項に記載の光硬化性・熱硬化性樹脂組成物を用いて形成された塗膜、又は請求項7記載のドライフィルムを、波長が400〜410nmのレーザー光によって光硬化させた後、熱硬化して得られる絶縁層を有するプリント配線板。
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US8399156B2 (en) * | 2007-07-26 | 2013-03-19 | Nippon Steel Chemical Co., Ltd. | Volume phase hologram recording material and optical information recording medium using the same |
JP5201397B2 (ja) * | 2008-04-25 | 2013-06-05 | 日立化成株式会社 | 感光性樹脂組成物及びこれを用いた感光性永久レジスト、感光性フィルム、レジストパターンの形成方法 |
DE102008052625A1 (de) * | 2008-10-22 | 2010-04-29 | Tesa Se | Thermisch vernetzende Polyacrylate und Verfahren zu deren Herstellung |
JP6054012B2 (ja) * | 2009-03-31 | 2016-12-27 | 太陽ホールディングス株式会社 | 硬化性樹脂組成物およびそれを用いたプリント配線板と反射板 |
JP5520509B2 (ja) * | 2009-03-31 | 2014-06-11 | 太陽ホールディングス株式会社 | 硬化性樹脂組成物 |
JP5236587B2 (ja) * | 2009-07-15 | 2013-07-17 | 太陽ホールディングス株式会社 | 光硬化性樹脂組成物 |
JP5415923B2 (ja) | 2009-12-14 | 2014-02-12 | 太陽ホールディングス株式会社 | 感光性樹脂組成物、そのドライフィルム及びそれらを用いたプリント配線板 |
JP5431225B2 (ja) * | 2010-03-29 | 2014-03-05 | 新日鉄住金化学株式会社 | アルカリ現像性感光性樹脂組成物、及びこれを用いて形成した表示素子向け隔壁、並びに表示素子 |
CN107652383A (zh) * | 2011-10-20 | 2018-02-02 | 日立化成株式会社 | 感光性树脂组合物、感光性元件、抗蚀图形的形成方法以及印刷电路板的制造方法 |
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KR20230124105A (ko) * | 2013-08-02 | 2023-08-24 | 가부시끼가이샤 레조낙 | 감광성 수지 조성물 |
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JP6343669B2 (ja) * | 2014-07-10 | 2018-06-13 | 太陽インキ製造株式会社 | 樹脂絶縁層の形成方法、樹脂絶縁層およびプリント配線板 |
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JP2006343694A (ja) * | 2005-06-10 | 2006-12-21 | Fujifilm Holdings Corp | パターン形成材料、並びにパターン形成装置及び永久パターン形成方法 |
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