CN101154880B - 抑制浪涌电压的半导体器件 - Google Patents

抑制浪涌电压的半导体器件 Download PDF

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Publication number
CN101154880B
CN101154880B CN2007101011037A CN200710101103A CN101154880B CN 101154880 B CN101154880 B CN 101154880B CN 2007101011037 A CN2007101011037 A CN 2007101011037A CN 200710101103 A CN200710101103 A CN 200710101103A CN 101154880 B CN101154880 B CN 101154880B
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China
Prior art keywords
voltage
control signal
insulated gate
gate bipolar
switching element
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CN2007101011037A
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English (en)
Chinese (zh)
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CN101154880A (zh
Inventor
王丸武志
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN101154880A publication Critical patent/CN101154880A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

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  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
CN2007101011037A 2006-09-25 2007-04-26 抑制浪涌电压的半导体器件 Active CN101154880B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006258329A JP4675302B2 (ja) 2006-09-25 2006-09-25 半導体装置
JP2006258329 2006-09-25
JP2006-258329 2006-09-25

Publications (2)

Publication Number Publication Date
CN101154880A CN101154880A (zh) 2008-04-02
CN101154880B true CN101154880B (zh) 2012-08-08

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ID=39154777

Family Applications (1)

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CN2007101011037A Active CN101154880B (zh) 2006-09-25 2007-04-26 抑制浪涌电压的半导体器件

Country Status (4)

Country Link
US (1) US7830196B2 (https=)
JP (1) JP4675302B2 (https=)
CN (1) CN101154880B (https=)
DE (1) DE102007019524B4 (https=)

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EP4489292A1 (en) * 2023-07-07 2025-01-08 APh ePower Co., Ltd. Motor driving device

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JP5413472B2 (ja) * 2011-06-15 2014-02-12 株式会社デンソー 半導体装置
US8717717B2 (en) 2011-08-04 2014-05-06 Futurewei Technologies, Inc. High efficiency power regulator and method
KR101643492B1 (ko) 2012-04-06 2016-07-27 미쓰비시덴키 가부시키가이샤 복합 반도체 스위치 장치
JP5783997B2 (ja) * 2012-12-28 2015-09-24 三菱電機株式会社 電力用半導体装置
CN103368362A (zh) * 2013-05-27 2013-10-23 苏州贝克微电子有限公司 在半桥配置下的双功率场效应管的驱动电路
WO2014198730A1 (en) * 2013-06-14 2014-12-18 Alstom Technology Ltd Semiconductor switching circuit
TWI543504B (zh) * 2013-08-15 2016-07-21 天鈺科技股份有限公司 靜電放電防護電路
US9722581B2 (en) * 2014-07-24 2017-08-01 Eaton Corporation Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing
EP3065296A1 (en) * 2015-03-05 2016-09-07 General Electric Technology GmbH Semiconductor switching string
JP6471550B2 (ja) * 2015-03-17 2019-02-20 サンケン電気株式会社 スナバ回路
US9819339B2 (en) * 2015-05-13 2017-11-14 Infineon Technologies Austria Ag Method and circuit for reducing collector-emitter voltage overshoot in an insulated gate bipolar transistor
JP6601086B2 (ja) * 2015-09-16 2019-11-06 富士電機株式会社 半導体装置及びその製造方法
GB2542805A (en) * 2015-09-30 2017-04-05 General Electric Technology Gmbh Semiconductor switching string
US10404188B2 (en) 2015-11-16 2019-09-03 Aisin Aw Co., Ltd. Power conversion devices
JP6680102B2 (ja) * 2016-06-16 2020-04-15 富士電機株式会社 半導体集積回路装置
US10411689B2 (en) * 2016-07-28 2019-09-10 Infineon Technologies Ag Increase robustness of devices to overvoltage transients
EP3429046A1 (de) * 2017-07-14 2019-01-16 Siemens Aktiengesellschaft Elektronischer schalter mit überspannungsbegrenzer
KR102645200B1 (ko) 2018-10-19 2024-03-07 현대자동차주식회사 전력 반도체 소자 게이트 구동 장치
CN115632642B (zh) * 2022-12-21 2023-03-10 杭州飞仕得科技股份有限公司 一种igbt关断电压尖峰抑制电路及相关设备
US20260012107A1 (en) * 2024-07-05 2026-01-08 Tesla, Inc. Hybrid traction inverters for electric traction motors

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CN1089965C (zh) * 1997-09-10 2002-08-28 株式会社东芝 换流装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1089965C (zh) * 1997-09-10 2002-08-28 株式会社东芝 换流装置
US6268990B1 (en) * 1998-06-26 2001-07-31 Kabushiki Kaisha Toshiba Semiconductor protection device and power converting system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4489292A1 (en) * 2023-07-07 2025-01-08 APh ePower Co., Ltd. Motor driving device

Also Published As

Publication number Publication date
DE102007019524A1 (de) 2008-04-10
US20080074816A1 (en) 2008-03-27
DE102007019524B4 (de) 2020-12-31
JP4675302B2 (ja) 2011-04-20
CN101154880A (zh) 2008-04-02
US7830196B2 (en) 2010-11-09
JP2008079475A (ja) 2008-04-03

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