CN101154653B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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Publication number
CN101154653B
CN101154653B CN2007100921942A CN200710092194A CN101154653B CN 101154653 B CN101154653 B CN 101154653B CN 2007100921942 A CN2007100921942 A CN 2007100921942A CN 200710092194 A CN200710092194 A CN 200710092194A CN 101154653 B CN101154653 B CN 101154653B
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CN
China
Prior art keywords
power semiconductor
circuit substrate
conductive pattern
drive circuit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007100921942A
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English (en)
Chinese (zh)
Other versions
CN101154653A (zh
Inventor
川口安人
林田幸昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101154653A publication Critical patent/CN101154653A/zh
Application granted granted Critical
Publication of CN101154653B publication Critical patent/CN101154653B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
CN2007100921942A 2006-09-28 2007-03-30 功率半导体模块 Expired - Fee Related CN101154653B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006265178A JP5168866B2 (ja) 2006-09-28 2006-09-28 パワー半導体モジュール
JP2006-265178 2006-09-28
JP2006265178 2006-09-28

Publications (2)

Publication Number Publication Date
CN101154653A CN101154653A (zh) 2008-04-02
CN101154653B true CN101154653B (zh) 2010-05-26

Family

ID=39134590

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007100921942A Expired - Fee Related CN101154653B (zh) 2006-09-28 2007-03-30 功率半导体模块

Country Status (5)

Country Link
US (1) US7514777B2 (https=)
JP (1) JP5168866B2 (https=)
CN (1) CN101154653B (https=)
DE (1) DE102007015534B4 (https=)
FR (1) FR2906645A1 (https=)

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* Cited by examiner, † Cited by third party
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JPS5834532B2 (ja) * 1979-12-07 1983-07-27 新日本製鐵株式会社 方向性電磁鋼板の仕上焼鈍方法
EP2182551A1 (en) * 2008-10-29 2010-05-05 ABB Research Ltd. Connection arrangement for semiconductor power modules
US9147666B2 (en) 2009-05-14 2015-09-29 Rohm Co., Ltd. Semiconductor device
DE102009026558B3 (de) * 2009-05-28 2010-12-02 Infineon Technologies Ag Leistungshalbleitermodul mit beweglich gelagerten Schaltungsträgern und Verfahren zur Herstellung eines solchen Leistungshalbleitermoduls
US8076696B2 (en) * 2009-10-30 2011-12-13 General Electric Company Power module assembly with reduced inductance
WO2011086896A1 (ja) * 2010-01-15 2011-07-21 三菱電機株式会社 電力用半導体モジュール
JP5212417B2 (ja) 2010-04-12 2013-06-19 三菱電機株式会社 パワー半導体モジュール
JP5174085B2 (ja) * 2010-05-20 2013-04-03 三菱電機株式会社 半導体装置
EP3573096B1 (en) * 2011-06-27 2022-03-16 Rohm Co., Ltd. Semiconductor module
CN102364676B (zh) * 2011-11-30 2013-10-30 江苏宏微科技有限公司 半导体功率模块封装外壳结构
WO2013115272A1 (ja) * 2012-01-30 2013-08-08 京セラ株式会社 種結晶保持体、結晶成長装置および結晶成長方法
DE102012211446B4 (de) * 2012-07-02 2016-05-12 Infineon Technologies Ag Explosionsgeschütztes halbleitermodul
JP6138277B2 (ja) * 2013-12-17 2017-05-31 三菱電機株式会社 パワー半導体モジュール
CN103675640A (zh) * 2013-12-19 2014-03-26 江苏瑞新科技股份有限公司 一种半导体p、n类型非接触测试传感器
JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
CN113707643A (zh) * 2021-08-30 2021-11-26 中国振华集团永光电子有限公司（国营第八七三厂） 一种高集成高可靠igbt功率模块及其制造方法
CN117175962A (zh) * 2022-06-02 2023-12-05 信通交通器材股份有限公司 功率模组

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942797A (en) * 1996-04-02 1999-08-24 Fuji Electric Co. Ltd. Power semiconductor module

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CH560999A5 (https=) 1973-08-16 1975-04-15 Bbc Brown Boveri & Cie
JP2726515B2 (ja) * 1989-09-22 1998-03-11 電気化学工業株式会社 半導体塔載用回路基板及びその製造方法
US5744860A (en) * 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
EP0789397B1 (en) 1996-02-07 2004-05-06 Hitachi, Ltd. Circuit board and semiconductor device using the circuit board
JP3599517B2 (ja) 1997-01-29 2004-12-08 電気化学工業株式会社 パワーモジュール用回路基板
JP2000323647A (ja) * 1999-05-12 2000-11-24 Toshiba Corp モジュール型半導体装置及びその製造方法
US7173336B2 (en) * 2000-01-31 2007-02-06 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP2002076197A (ja) 2000-08-24 2002-03-15 Toshiba Corp 半導体装置用基板及び半導体装置
JP3923716B2 (ja) * 2000-09-29 2007-06-06 株式会社東芝 半導体装置
US20020043727A1 (en) * 2000-10-13 2002-04-18 Hsiao-Che Wu Bonding pad structure
US6844621B2 (en) * 2002-08-13 2005-01-18 Fuji Electric Co., Ltd. Semiconductor device and method of relaxing thermal stress
JP4381047B2 (ja) 2003-07-09 2009-12-09 東芝三菱電機産業システム株式会社 半導体装置
JP4037332B2 (ja) * 2003-07-10 2008-01-23 シャープ株式会社 Ｉｃモジュールおよびｉｃカード
JP4097613B2 (ja) * 2004-03-09 2008-06-11 三菱電機株式会社 半導体装置
JP4376106B2 (ja) 2004-03-30 2009-12-02 電気化学工業株式会社 セラミックス二層回路基板

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942797A (en) * 1996-04-02 1999-08-24 Fuji Electric Co. Ltd. Power semiconductor module

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2002-76197A 2002.03.15
JP特开平10-214915A 1998.08.11

Also Published As

Publication number Publication date
DE102007015534B4 (de) 2015-01-22
FR2906645A1 (fr) 2008-04-04
JP5168866B2 (ja) 2013-03-27
DE102007015534A1 (de) 2008-04-03
JP2008085169A (ja) 2008-04-10
US7514777B2 (en) 2009-04-07
CN101154653A (zh) 2008-04-02
US20080105896A1 (en) 2008-05-08

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Granted publication date: 20100526