CN101151724B - 金属碳化物栅极结构和制造方法 - Google Patents

金属碳化物栅极结构和制造方法 Download PDF

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Publication number
CN101151724B
CN101151724B CN2004800351638A CN200480035163A CN101151724B CN 101151724 B CN101151724 B CN 101151724B CN 2004800351638 A CN2004800351638 A CN 2004800351638A CN 200480035163 A CN200480035163 A CN 200480035163A CN 101151724 B CN101151724 B CN 101151724B
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China
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metal
carbon
containing layer
gate
layer
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Expired - Lifetime
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CN2004800351638A
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Chinese (zh)
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CN101151724A (zh
Inventor
小西里尔·卡布拉尔
克里斯托弗·德塔沃尼尔
拉贾劳·加米
凯瑟琳·L.·萨恩格
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2004800351638A 2003-11-28 2004-11-29 金属碳化物栅极结构和制造方法 Expired - Lifetime CN101151724B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/722,557 US7064050B2 (en) 2003-11-28 2003-11-28 Metal carbide gate structure and method of fabrication
US10/722,557 2003-11-28
PCT/US2004/039855 WO2005062752A2 (en) 2003-11-28 2004-11-29 Metal carbide gate structure and method of fabrication

Publications (2)

Publication Number Publication Date
CN101151724A CN101151724A (zh) 2008-03-26
CN101151724B true CN101151724B (zh) 2012-02-01

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CN2004800351638A Expired - Lifetime CN101151724B (zh) 2003-11-28 2004-11-29 金属碳化物栅极结构和制造方法

Country Status (9)

Country Link
US (2) US7064050B2 (https=)
EP (1) EP1687457B1 (https=)
JP (1) JP5063113B2 (https=)
KR (1) KR100956714B1 (https=)
CN (1) CN101151724B (https=)
AT (1) ATE460746T1 (https=)
DE (1) DE602004025966D1 (https=)
TW (1) TWI374516B (https=)
WO (1) WO2005062752A2 (https=)

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CN1266277A (zh) * 1999-02-26 2000-09-13 德克萨斯仪器股份有限公司 形成cmos器件的双金属栅结构的方法

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Also Published As

Publication number Publication date
JP2007525827A (ja) 2007-09-06
WO2005062752A2 (en) 2005-07-14
US7064050B2 (en) 2006-06-20
EP1687457A4 (en) 2009-06-17
KR20070008528A (ko) 2007-01-17
KR100956714B1 (ko) 2010-05-06
TW200524089A (en) 2005-07-16
DE602004025966D1 (de) 2010-04-22
ATE460746T1 (de) 2010-03-15
EP1687457A2 (en) 2006-08-09
JP5063113B2 (ja) 2012-10-31
CN101151724A (zh) 2008-03-26
US20050116230A1 (en) 2005-06-02
TWI374516B (en) 2012-10-11
US20060186490A1 (en) 2006-08-24
US7667278B2 (en) 2010-02-23
WO2005062752A3 (en) 2007-05-18
EP1687457B1 (en) 2010-03-10

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