DE602004025966D1 - Metallcarbid-gatestruktur und herstellungsverfahren - Google Patents

Metallcarbid-gatestruktur und herstellungsverfahren

Info

Publication number
DE602004025966D1
DE602004025966D1 DE602004025966T DE602004025966T DE602004025966D1 DE 602004025966 D1 DE602004025966 D1 DE 602004025966D1 DE 602004025966 T DE602004025966 T DE 602004025966T DE 602004025966 T DE602004025966 T DE 602004025966T DE 602004025966 D1 DE602004025966 D1 DE 602004025966D1
Authority
DE
Germany
Prior art keywords
metal
manufacturing
gate structure
metal carbide
carbide gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004025966T
Other languages
German (de)
English (en)
Inventor
Cyril Cabral Jr
Christopher Detavernier
Rajarao Jammy
Katherine L Saenger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE602004025966D1 publication Critical patent/DE602004025966D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE602004025966T 2003-11-28 2004-11-29 Metallcarbid-gatestruktur und herstellungsverfahren Expired - Lifetime DE602004025966D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/722,557 US7064050B2 (en) 2003-11-28 2003-11-28 Metal carbide gate structure and method of fabrication
PCT/US2004/039855 WO2005062752A2 (en) 2003-11-28 2004-11-29 Metal carbide gate structure and method of fabrication

Publications (1)

Publication Number Publication Date
DE602004025966D1 true DE602004025966D1 (de) 2010-04-22

Family

ID=34619981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004025966T Expired - Lifetime DE602004025966D1 (de) 2003-11-28 2004-11-29 Metallcarbid-gatestruktur und herstellungsverfahren

Country Status (9)

Country Link
US (2) US7064050B2 (https=)
EP (1) EP1687457B1 (https=)
JP (1) JP5063113B2 (https=)
KR (1) KR100956714B1 (https=)
CN (1) CN101151724B (https=)
AT (1) ATE460746T1 (https=)
DE (1) DE602004025966D1 (https=)
TW (1) TWI374516B (https=)
WO (1) WO2005062752A2 (https=)

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Also Published As

Publication number Publication date
JP2007525827A (ja) 2007-09-06
WO2005062752A2 (en) 2005-07-14
US7064050B2 (en) 2006-06-20
EP1687457A4 (en) 2009-06-17
KR20070008528A (ko) 2007-01-17
KR100956714B1 (ko) 2010-05-06
TW200524089A (en) 2005-07-16
ATE460746T1 (de) 2010-03-15
EP1687457A2 (en) 2006-08-09
JP5063113B2 (ja) 2012-10-31
CN101151724A (zh) 2008-03-26
CN101151724B (zh) 2012-02-01
US20050116230A1 (en) 2005-06-02
TWI374516B (en) 2012-10-11
US20060186490A1 (en) 2006-08-24
US7667278B2 (en) 2010-02-23
WO2005062752A3 (en) 2007-05-18
EP1687457B1 (en) 2010-03-10

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