KR100956714B1 - 금속 카바이드 게이트 구조물 및 그 제조방법 - Google Patents

금속 카바이드 게이트 구조물 및 그 제조방법 Download PDF

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Publication number
KR100956714B1
KR100956714B1 KR1020067010352A KR20067010352A KR100956714B1 KR 100956714 B1 KR100956714 B1 KR 100956714B1 KR 1020067010352 A KR1020067010352 A KR 1020067010352A KR 20067010352 A KR20067010352 A KR 20067010352A KR 100956714 B1 KR100956714 B1 KR 100956714B1
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metal
gate
carbon
work function
carbide
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KR20070008528A (ko
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시릴 제이알. 카브랄
크리스토퍼 데타버니어
라자라오 재미
캐서린 엘. 쟁거
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020067010352A 2003-11-28 2004-11-29 금속 카바이드 게이트 구조물 및 그 제조방법 Expired - Fee Related KR100956714B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/722,557 US7064050B2 (en) 2003-11-28 2003-11-28 Metal carbide gate structure and method of fabrication
US10/722,557 2003-11-28

Publications (2)

Publication Number Publication Date
KR20070008528A KR20070008528A (ko) 2007-01-17
KR100956714B1 true KR100956714B1 (ko) 2010-05-06

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KR1020067010352A Expired - Fee Related KR100956714B1 (ko) 2003-11-28 2004-11-29 금속 카바이드 게이트 구조물 및 그 제조방법

Country Status (9)

Country Link
US (2) US7064050B2 (https=)
EP (1) EP1687457B1 (https=)
JP (1) JP5063113B2 (https=)
KR (1) KR100956714B1 (https=)
CN (1) CN101151724B (https=)
AT (1) ATE460746T1 (https=)
DE (1) DE602004025966D1 (https=)
TW (1) TWI374516B (https=)
WO (1) WO2005062752A2 (https=)

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US8574990B2 (en) 2011-02-24 2013-11-05 United Microelectronics Corp. Method of manufacturing semiconductor device having metal gate
US8802524B2 (en) 2011-03-22 2014-08-12 United Microelectronics Corp. Method of manufacturing semiconductor device having metal gates
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US8704294B2 (en) 2011-06-13 2014-04-22 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
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US8709930B2 (en) 2011-11-25 2014-04-29 United Microelectronics Corp. Semiconductor process
US8546212B2 (en) 2011-12-21 2013-10-01 United Microelectronics Corp. Semiconductor device and fabricating method thereof
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US8951855B2 (en) 2012-04-24 2015-02-10 United Microelectronics Corp. Manufacturing method for semiconductor device having metal gate
US9054172B2 (en) 2012-12-05 2015-06-09 United Microelectrnics Corp. Semiconductor structure having contact plug and method of making the same
US8735269B1 (en) 2013-01-15 2014-05-27 United Microelectronics Corp. Method for forming semiconductor structure having TiN layer
US9129985B2 (en) 2013-03-05 2015-09-08 United Microelectronics Corp. Semiconductor device having metal gate and manufacturing method thereof
US9219078B2 (en) 2013-04-18 2015-12-22 International Business Machines Corporation Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs
US9184254B2 (en) 2013-05-02 2015-11-10 United Microelectronics Corporation Field-effect transistor and fabricating method thereof
US9159798B2 (en) 2013-05-03 2015-10-13 United Microelectronics Corp. Replacement gate process and device manufactured using the same
US9196542B2 (en) 2013-05-22 2015-11-24 United Microelectronics Corp. Method for manufacturing semiconductor devices
US8921947B1 (en) 2013-06-10 2014-12-30 United Microelectronics Corp. Multi-metal gate semiconductor device having triple diameter metal opening
US9196546B2 (en) 2013-09-13 2015-11-24 United Microelectronics Corp. Metal gate transistor
US9741577B2 (en) 2015-12-02 2017-08-22 International Business Machines Corporation Metal reflow for middle of line contacts
US9960078B1 (en) 2017-03-23 2018-05-01 International Business Machines Corporation Reflow interconnect using Ru
US10672649B2 (en) 2017-11-08 2020-06-02 International Business Machines Corporation Advanced BEOL interconnect architecture
US10541199B2 (en) 2017-11-29 2020-01-21 International Business Machines Corporation BEOL integration with advanced interconnects
TWI801222B (zh) * 2022-04-26 2023-05-01 國立成功大學 多元合金材料層、其製造方法及半導體裝置的電容結構
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KR20000025656A (ko) * 1998-10-13 2000-05-06 윤덕용 코발트-카본 합금박막을 이용한 단결정 코발트다이실리사이드콘택 형성방법
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Also Published As

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JP2007525827A (ja) 2007-09-06
WO2005062752A2 (en) 2005-07-14
US7064050B2 (en) 2006-06-20
EP1687457A4 (en) 2009-06-17
KR20070008528A (ko) 2007-01-17
TW200524089A (en) 2005-07-16
DE602004025966D1 (de) 2010-04-22
ATE460746T1 (de) 2010-03-15
EP1687457A2 (en) 2006-08-09
JP5063113B2 (ja) 2012-10-31
CN101151724A (zh) 2008-03-26
CN101151724B (zh) 2012-02-01
US20050116230A1 (en) 2005-06-02
TWI374516B (en) 2012-10-11
US20060186490A1 (en) 2006-08-24
US7667278B2 (en) 2010-02-23
WO2005062752A3 (en) 2007-05-18
EP1687457B1 (en) 2010-03-10

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