CN101127334B - 集成电路封装体及其制造方法 - Google Patents

集成电路封装体及其制造方法 Download PDF

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Publication number
CN101127334B
CN101127334B CN200710126476XA CN200710126476A CN101127334B CN 101127334 B CN101127334 B CN 101127334B CN 200710126476X A CN200710126476X A CN 200710126476XA CN 200710126476 A CN200710126476 A CN 200710126476A CN 101127334 B CN101127334 B CN 101127334B
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hot
tube core
radiator
interconnecting component
packaging body
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CN101127334A (zh
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萨姆·齐昆·赵
雷泽厄·拉曼·卡恩
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Avago Technologies General IP Singapore Pte Ltd
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Zyray Wireless Inc
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Abstract

本发明涉及一种改进型集成电路(IC)封装体及其制造方法。一方面，IC器件封装体包括带有接触焊盘的IC管芯，该接触焊盘位于IC管芯表面的热点处。热点连接于热互连构件。封装体密封在塑封材料中。散热器安装在塑封材料上并与热互连构件相连。另一方面，热互连构件将散热器与衬底热连接。

Description

集成电路封装体及其制造方法
技术领域
本发明涉及集成电路(IC)器件封装技术，更具体地说，涉及IC半导体管芯热点的冷却、IC封装体的散热及IC封装体中的热互连技术。
背景技术
电信号是由流经制作在半导体衬底上的大规模集成电路(IC)中的导线和晶体管的电流来承载的。电流所承载的能量中有一部分在电流流经IC过程中以热量的形式耗散掉。电子半导体IC所产生的热量也称为功耗、功率耗散(power dissipation)或热散耗(heat dissipation)。IC中产生的热量P为动态功率PD和静态功率Ps之和，即：
P＝PD+Ps＝ACV2f+VIleak
其中A是门电路活跃因子(gate activity factor)，C是所有门电路(gate)的总电容负载，V是峰至峰电源电压摆幅，f是频率，Ileak是漏电流。静态功率Ps＝VIleak，是漏电流Ileak导致的静态功率耗散。有关静态功率在Kim等人编写的于2003年12月发表于IEEE Computer 36(12)第68-75页上的LeakageCurrent：Moore’s Law Meet Static Power中进行了详细的描述，本文引用了其中的全部内容。
动态功率PD＝ACV2f，是IC器件电容负载充电和放电过程中的动态功率损耗。因此动态功耗正比于工作频率和工作电压的平方。静态功耗正比于工作电压。半导体IC技术中晶体管门电路尺寸(gate size)的缩小降低了单个晶体管的工作电压和功率耗散。然而，由于产业一直遵循摩尔定律发展，未来技术中芯片功率密度预期将进一步上升。1965年，英特尔共同创始人高登·摩尔预言芯片中晶体管的数量将每两年增加一倍。除了芯片中晶体管数量会增加以外，依照2004年国际半导体技术发展蓝图(ITRS蓝图)(http://www.itrs.net/Common/2004Update/2004_00_Overview.pdf)，工作频率也将每两年提高一倍。电压降低会加大在噪声容限控制方面的难度，因此对于130nm及更短的栅极长度(gate lengths)而言，工作电压再也无法像过去一样降低的那样迅速。因此，芯片的功率耗散将继续上升。详情参见ITRS蓝图表6。随着制造过程中更多的采用65nm技术，以及45nm技术的商业化，功耗问题目前已成为半导体工业中的主要技术问题。
IC芯片的另一特征在于半导体管芯温度的非均匀分布。在片上系统(system-on-chip，SOC)设计中，单块芯片上集成的功能模块越来越多。较高的功率密度区会产生非均匀温度分布现象，在芯片上导致“热点(hotspots)”的出现，热点也称为“热区(hot blocks)”。热点在芯片上产生的温差可达5℃至30℃左右。在Shakouri和Zhang编写的“On-Chip Solid-State CoolingFor Integrated Circuits Using Thin-Film Microrefrigerators”IEEETransaction on Components and Packaging TechnologiesVo1.28，No.1，March，2005，pp.65-69中对热点进行了详细的描述，本文也引用了其中的全部内容。
由于载流子迁移率与温度成反比，因此时钟速度通常必须根据芯片上的最热点来进行设计。因此，热设计是基于这些芯片上的热点温度来进行的。同时，若由于管芯(die)上的片上温度变化而无法在IC管芯上得到统一的载流子迁移率，则将会导致信号速度的变化，并使得电路时钟控制变得复杂。
过去，散热器(包括内嵌(drop-in)散热器、散热片和散热管)被用于提高IC封装体的热性能。2003年4月22日授权的名称为“SemiconductorPackage Having An Exposed Heat Spreader”的美国专利No.6552428中对散热器实例进行了详细的描述，本文也引用了其中的全部内容。由Zhao和Avedisian编写的“Enhancing Forced Air Convection Heat Transfer FromAn Array Of Parallel Plate Fins Using A Heat Pipe”Int.J.Heat MassTransfer，Vol.40，No.1，pp.3135-3147(1997)中对散热管实例进行了详细的描述。
例如，图1A展示了管芯朝上塑胶球栅阵列封装体(PBGA)封装体100，其上集成了内嵌散热器104。在封装体100中，IC管芯102通过管芯粘合材料106贴装在衬底110上，并与引线(wirebond)114相连。封装体100可通过焊球108连接到印刷线路板(PWB)(未示出)上。内嵌式散热器104设置在衬底110上，用于排出管芯102的热量。塑封材料112将封装体100密封起来，其中包括管芯102、引线114、部分或全部内嵌散热器104和衬底110的部分或全部上表层。内嵌散热器104通常由铜或者热传导性优于塑封材料112的其它材料制成。铜的热传导值在390 W/m*℃左右，塑封材料的热传导值为0.8W/m*℃左右。
如图1A所示的热性能增强方法的原理是将热量从整个芯片或整个封装体中移除。通过对整个芯片不加区分地进行冷却，将半导体温度维持在工作上限以下。相对于芯片的其它部位，这些方法通常不足以降低热点的温度，或者在降低热点温度方面根本不起作用，因此芯片的工作仍受到热点的限制。
例如，图1B展示了硅管芯102的剖视图，并且特别展示了未使用外部散热片的PBGA中硅管芯102上的温度分布情况。管芯102上的温差为13.5℃。图1C展示的是在封装体中增加了内嵌散热器和散热片之后，图1B中管芯102的情况。在露出的内嵌散热器上面贴装大尺寸(45mm×45mm×25mm)外部铝质pin-fin散热片后，温差仍为13.0℃。无论是内嵌散热器还是外部散热片，在降低由热点引起的片上温差方面都是无效的。
在本领域中还有一种冷却方法，这就是使用电能来排出IC芯片热量的主动式片上冷却方法。例如，一些人建议在硅片上刻出微型管道，然后泵入液体冷却剂使其围绕半导体管芯循环流动，以带走残余的热量。由Bush编写的于2005年7月20日发表在Electronic News上的“Fluid Cooling Plugs Directonto CMOS”(http://www.reed-electronics.com/electronicnews/article/CA626959？nid＝2019&rid＝550846255)对液体冷却方法进行了详细的介绍，本文也引用了其中的全部内容。还可参见由Singer编写的于2005年7月20日发表在Electronic News上的“Chip Heat Removal with MicrofluidicBackside Cooling”，本文也引用了其中的全部内容。
此外，还开发出了使用薄膜热电冷却器(TEC)来提供主动片上冷却的其它主动冷却方法。与使用TEC的片上冷却有关的内容在由Snyder等人编写的“Hot Spot Cooling using Embedded Thermoelectric Coolers”(22ND IEEESEMI-THERM，Symposium，pp.135-143(2006))中进行了详细的描述，本文也引用了其中的全部内容。
这些主动冷却方法要求使用外部的昂贵流体循环或微冷却系统，并且会增加封装体的整体功耗，然而该功耗正是要必须消除的。此外，还需要在IC封装体中集成独立的电源来驱动流体泵或TEC系统。这些部件非常昂贵，而且还会降低部件的可靠性。由于这些解决方案通常都很昂贵，因此在对成本敏感的应用如消费类电子器件中，其使用受到限制。
上面描述的这些冷却方法不足以和/或难于实现商业化应用，或者成本过高。因此，需要一种低廉可靠的系统和方法，可以选择性的排出半导体管芯上热区或热点的热量。
发明内容
本发明涉及改进型集成电路(IC)封装的方法、装置及系统。
本发明的一方面，IC器件封装体包括带有接触焊盘的IC管芯，该接触焊盘位于IC管芯表面的热点处。热互连构件贴装于热点处。本发明的一方面，封装体密封在塑封材料中。本发明的另一方面，管芯和热互连构件彼此之间存在电连接。
本发明的一方面，封装体还包括散热器。该散热器可热连接至热互连构件。本发明的另一方面，该散热器还电连接至热互连构件。本发明的一方面，散热器完全密封在塑封材料中。另一方面，散热器至少部分地密封在塑封材料中。本发明的一方面，散热器上包括被涂敷区域，其位置与热互连构件相对应。
本发明的一方面，制造IC封装体的方法包括：将IC管芯贴装到衬底上，采用焊线键合工艺将管芯和衬底之间电互连，将至少一个热互连构件连接到管芯的至少一个接触焊盘上，将封装体密封在塑封材料或其它密封材料中。本发明的另一方面，热互连构件(或多个热互连构件)有一部分裸露。在一实施例中，塑封材料被移除一整层以使热互连构件外露。在另一实施例中，塑封材料中挖有一凹腔以使热互连构件外露。
本发明的一方面，制造IC封装体的方法还包括：将散热器与外露的热互连构件相连。一方面，散热器与热互连构件相对应部位有一处或多处涂敷材料。
本发明的另一方面，对管芯进行分析，以确定因管芯工作所引起的管芯表面至少一个热点的位置。一方面，该分析包括绘制管芯的功能模块图来确定一个或多个热点。另一方面，该分析包括在管芯工作期间对管芯进行热分析以定位一个或多个热点。
本发明的另一方面，IC封装体包括具有相对的第一和第二表面的衬底、安装在所述衬底第一表面的IC管芯、散热器，及连接衬底第一表面与散热器表面的热互连构件。
根据本发明的一方面，提供一种集成电路(IC)封装体，包括：
带有接触焊盘的IC管芯，其中所述接触焊盘位于IC管芯表面的热点处，在管芯工作期间所述热点处的温度高于管芯表面的其它部位的温度；及
连接于所述接触焊盘的热互连构件。
在本发明的IC封装体中，所述热互连构件使得在管芯工作期间所述热点处的温度能够降低为其它部位的温度。
在本发明的IC封装体中，还包括：
密封管芯和至少一部分热互连构件的塑封材料。
在本发明的IC封装体中，所述热互连构件电连接于和热连接于所述接触焊盘。
在本发明的IC封装体中，还包括：
热连接于所述热互连构件的散热器。
在本发明的IC封装体中，所述散热器电连接于所述热互连构件。
在本发明的IC封装体中，还包括：
密封所述管芯、热互连构件和散热器其中一部分的塑封材料。
在本发明的IC封装体中，还包括：
密封所述管芯、热互连构件和散热器的塑封材料。
在本发明的IC封装体中，所述散热器上与热互连构件相连接部分的区域涂敷有粘合材料。
在本发明的IC封装体中，所述涂敷材料为焊料。
在本发明的IC封装体中，所述涂敷材料为环氧材料。
在本发明的IC封装体中，还包括贴装在管芯表面至少一个附加(additional)接触焊盘上的至少一个附加热互连构件，所述至少一个附加接触焊盘位于管芯表面至少一个附加热点上。
在本发明的IC封装体中，还包括：
热连接于所述第一热互连构件和至少一个附加热互连构件的散热器。
在本发明的IC封装体中，所述塑封材料的表面形成凹腔。
在本发明的IC封装体中，还包括：
所述散热器安装在凹腔内。
在本发明的IC封装体中，热互连构件部分外露出塑封材料表面。
在本发明的IC封装体中，热互连构件的外露表面为平面并与塑封材料表面共在一平面内。
在本发明的IC封装体中，所述热互连构件为焊球。
在本发明的IC封装体中，所述焊球顶部被截掉。
在本发明的IC封装体中，所述热互连构件包括金属。
在本发明的IC封装体中，所述金属包括金、铜、铝、银、镍、锡或金属合金。
在本发明的IC封装体中，所述热互连构件包括导热环氧材料。
在本发明的IC封装体中，所述热互连构件包括内核材料及包覆该内核的键合材料。
根据本发明的一方面，提供一种制造IC封装体的方法，包括以下步骤：
(a)将IC管芯贴装到衬底上，所述IC管芯表面的热点处设置有接触焊盘，在管芯工作期间所述热点处的辐射热量高于管芯表面其它部位的辐射热量；
(b)在管芯和衬底之间连接至少一条焊线；
(c)将热互连构件与所述接触焊盘相连；
(d)将管芯、至少一条焊线和至少一部分热互连构件密封在密封材料中。
在本发明所述的方法中，还包括以下步骤：
(e)至少裸露出一个热互连构件。
在本发明所述的方法中，所述步骤(e)包括移除一整层塑封材料。
在本发明所述的方法中，所述步骤(e)包括移除一层塑封材料中的部分区域。
在本发明所述的方法中，还包括
(e)将散热器连接到热互连构件。
在本发明所述的方法中，先执行步骤(e)后执行步骤(d)。
在本发明所述的方法中，先执行步骤(d)后执行步骤(e)。
在本发明所述的方法中，先执行步骤(e)后执行步骤(c)。
在本发明所述的方法中，先执行步骤(c)后执行步骤(e)。
在本发明所述的方法中，所述散热器有一涂敷区域，其中步骤(e)包括：
将所述涂敷区域贴装到热互连构件的表面。
在本发明所述的方法中，所述步骤(e)包括：
将至少一个附加热互连构件连接于管芯表面上的至少一个附加(additional)接触焊盘上，所述至少一个附加接触焊盘位于管芯表面至少一个附加热点上。
在本发明所述的方法中，还包括：
(e)将散热器连接于所述第一热互连构件和至少一个附加热互连构件。
在本发明所述的方法中，还包括：
(e)在塑封材料表面形成凹腔。
在本发明所述的方法中，还包括：
(f)将散热器安装到所述凹腔中。
在本发明所述的方法中，所述热互连构件为焊球，其中步骤(c)还包括：
将焊球安装到接触焊盘上。
在本发明所述的方法中，所述热互连构件为焊球，其中步骤(c)还包括：
截去焊球的顶部。
在本发明所述的方法中，还包括：
(e)对管芯进行热分析以确定管芯上的至少一个热点。
根据本发明的一方面，提供一种IC封装体，包括
具有相对的第一和第二表面的衬底；
安装在所述衬底第一表面的管芯；
散热器；及
将所述衬底第一表面连接到所述散热器表面的热互连构件。
在本发明的IC封装体中，所述热互连构件为焊球。
在本发明的IC封装体中，还包括至少一个附加热互连构件，其将衬底的第一表面连接到散热器的表面。
在本发明的IC封装体中，所述IC管芯带有接触焊盘，其中所述接触焊盘位于IC管芯表面的热点处，在管芯工作期间所述热点处的温度高于管芯表面的其它部位的温度；还包括
将所述接触焊盘连接到所述散热器表面的第二热互连构件。
在本发明的IC封装体中，所述热互连构件贴装在衬底第一表面的导电体上。
在本发明的IC封装体中，所述热互连构件包括金属。
在本发明的IC封装体中，所述金属包括金、铜、铝、银、镍、锡或金属合金。
在本发明的IC封装体中，所述热互连构件包括导热环氧材料。
在本发明的IC封装体中，所述热互连构件包括内核材料及包覆该内核的键合材料。
根据本发明的一方面，提供一种制造IC封装体的方法，包括以下步骤：
(a)将管芯贴装到衬底上；
(b)将热互连构件连接到所述衬底；
(c)将管芯和至少一部分热互连构件密封在密封材料中；
(d)将热互连构件连接到散热器。
在本发明的方法中，先执行步骤(b)后执行步骤(d)。
在本发明的方法中，先执行步骤(d)后执行步骤(b)。
在本发明的方法中，所述步骤(b)包括：
将第二热互连构件贴装到IC管芯表面热点处的接触焊盘，在管芯工作期间所述热点处的辐射热量高于管芯表面其它部位的辐射热量；
在本发明所述的方法中，所述热互连构件为焊球，其中步骤(b)还包括：
将焊球安装到衬底上。
在本发明所述的方法中，所述步骤(b)还包括：
将多个热互连构件连接到衬底上，其中所述步骤(d)包括：
将所述多个热互连构件连接到所述散热器。
在下面将要进行的对本发明的详细描述中，上述和其它部件、优势和特征将变得更加明显。应注意的是，发明内容和摘要部分可能使用一个或多个实施例，但并未列出发明人可能补充的有关本发明的全部示范性实施例。
附图说明
下面将结合附图及实施例对本发明作进一步说明，附图中：
图1A所示为传统IC封装的示意图；
图1B和图1C所示为图1A中传统IC封装采用传统冷却方法后管芯温度分布的示意图；
图2A和2B是根据本发明实施例的球栅阵列(BGA)封装的剖视图；
图2C是根据本发明实施例的BGA封装的截面示意图；
图2D是根据本发明实施例的球栅阵列(BGA)封装的透视图；
图2E是根据本发明实施例的球栅阵列(BGA)封装的剖视图；
图2F是根据本发明实施例的BGA封装的截面示意图；
图3A-图3E是根据本发明实施例的带有散热器的密间距球栅阵列(FBGA)封装的截面示意图；
图4A-图4B是根据本发明实施例的带有散热器的塑胶球栅阵列(PBGA)封装的截面示意图；
图5A-图5C是根据本发明实施例的带有散热器的引线架式封装的截面示意图；
图6A-图6B是根据本发明实施例的带有散热器的无引线扁平(QFN)封装的示意图；
图7A是根据本发明实施例的装配IC封装体的示例性步骤的流程图；
图7B-图7F是根据本发明实施例，在各个装配阶段的IC封装体的截面图，本实施例中，先密封后再安装散热器；
图8A是根据本发明实施例的装配IC封装体的示例性步骤的流程图；
图8B-图8C是根据本发明实施例，在IC封装体上安装散热器的截面图；
图9A根据本发明实施例的装配IC封装体的示例性步骤的流程图；
图9B-图9D是根据本发明实施例，在各个装配阶段的IC封装体的截面图，本实施例中，先安装散热器后再密封；
图9E是根据本发明实施例的装配IC封装体的示例性步骤的流程图；
图9F-图9H是根据本发明实施例，在各个装配阶段的IC封装体的截面图，本实施例中，先安装散热器后再密封；
图10A-10C是根据本发明实施例，带有热连接到封装体衬底的散热器的BGA封装体的截面图。
以下将参照附图结合实施例对本发明进行详细描述。附图中，相同的附图标记在各幅附图中用于表示相同的或功能相似的部件。另外，附图标记最左边的数字用于标识该附图标记首次出现的那幅附图的编号。
具体实施方式
引言
本文描述了有关IC器件封装技术的方法、系统和装置。更具体地说，描述了有关(1)IC半导体管芯上的热点冷却、(2)IC封装体散热和(3)IC封装体热互连技术的方法、系统和装置。
本说明书中提及的“一个实施例”、“实施例”、“示例性实施例”等等指的是所描述的实施例可能包括某特定特征、结构或特点，但是并不是每一个实施例都必定包括该特定特征、结构或特点。此外，这些短语不一定指的是同一个实施例。还有，当结合某一实施例描述某特定特征、结构或特点时，无论是否明确说明，可以认为本领域的技术人员能够将这些特定特征、结构或特点结合到其它实施例中。
本说明书公开了结合有本发明特征的一个或多个实施例。所公开的实施例仅仅是对本发明的举例，本发明的范围不局限于所公开的实施例，而由本申请的权利要求来定义。
此外，需要理解的是，本文中所使用的与空间方位有关的描述(例如“上面”、“下面”、“左边”、“右边”、“向上”、“向下”、“顶部”、“底部”等)仅仅是出于举例解释的目的，本申请中所介绍的结构的实际实现可以具有各种不同的方位或方式。
本发明的实施例中，为半导体管芯表面所需的部位提供更强的散热性能。传统器件中是对整个IC管芯和或IC封装体进行冷却，从而将IC管芯的峰值温度控制在正常工作的阈值范围内。与其不同的是，在本发明的实施例中，是将一个或多个热互连构件连接到IC管芯表面的一处或多处。热互连构件将管芯热点上的热量带走。热互连构件提供了一条或多条热转移途径，透过密封管芯的塑封材料将热量从IC管芯散发到外界环境中。
在另一实施例中，热互连构件与散热器相连。当热互连构件与集成在封装体中的散热器相连时，热互连构件起到传热桥梁的作用，以透过填充在散热器和管芯之间空隙中的塑封材料传递热量。热互连构件与管芯相接触处位置是可选择的，例如通过使用芯片上功率密度分布图和或根据IC芯片布图。
在实施例中，可在所有类型的IC封装体内实施一个或多个热互连构件，无论带散热器或不带散热器。诸如可在塑胶球栅阵列(PBGA)封装、精细间距球栅阵列(FBGA)封装、矩栅阵列(LGA)、针栅阵列(PGA)、后塑封塑胶导线架式封装(如扁平封装(QFP)和无引线扁平封装(QFN)及微导线架式封装(MLP))中都可实施。例如，本发明的实施例可在密封于塑封材料中的所有焊线式封装体中实施，以便于芯片上的热点冷却，同时改进器件的整体散热性能。
热互连构件(thermal interconnect member)的实施例
在实施例中，热互连构件可以是导热焊球、焊块(solder bumps)、柱、或其它导热结构。在一些实施例中，热互连构件还可以是导电体。为进行示例说明，以下采用焊球作为热互连结构的实施例，来说明本发明的原理。当然，本发明的实施例还可以采用其它的热互连结构。热互连构件可以由金属制成，如金、铜、铝、银、镍或锡；可以由金属混合物/合金制成，如焊料、低共熔混合物(锡、铅)、无铅焊料；可以导热环氧材料或其它粘合剂材料制成；或可由其它导热材料制成。在一个实施例中，热互连构件可由内核材料外部覆盖一层键合材料而构成，该键合材料可以是焊料、金、银、环氧材料，或能够将热互连构件与半导体管芯上的接触焊盘(contact pads)机械键合到一起的其它粘合材料。在一个实施例中，热互连构件可以预先堆放在半导体管芯表面预定的接触焊盘上。在另一个实施例中，一个或多个热互连构件还连接至散热器。
将具有高导热性的热互连构件贴装到管芯上某些区域(称为点或“区”)的接触焊盘上，可将热点(也称为“热区”)所产生的热量从IC管芯直接导向外界环境，或通过导热散热器(如果有)导向外界环境。在一个实施例中，一个或多个热互连构件的布置取决于特定应用中半导体管芯的功率分布图。在另一个实施例中，如果由于应用不同而导致功率分布图不同，同种半导体管芯可以在不同位置设置热互连构件。例如，对于不同的应用，当管芯上不同的功能模块从“上电(power-up)”模式转换为“下电(power-down)”模式时，会出现这种热点位置不同的情况，反之亦然。
在一实施例中，对管芯进行分析以确定管芯表面的至少一个热点，这些热点是因管芯工作产生的。在一个实施例中，所述分析包括绘出管芯的功能模块分布图以确定一个或多个热点。在另一个实施例中，所述分析包括在管芯工作期间进行热分析/测量(例如，如图1B和1C所示)，以对热点进行定位。作为分析结果，可以确定出管芯表面的一个或多个热点。与热点处相比，热点以外的其它区域的温度相对偏低，因而散热需求相对较少。因此，根据本发明的实施例，一个或多个热点上都连接(机械/热连接)有相应的热互连构件，以将热量从热点处带走，同时从较冷点/区带走的热量较少(因为热互连构件并未直接安装在较冷点/区)。采用这种方式，能够使管芯表面的热分布更加趋于一致(对热点进行冷，使其温度与冷点/区处接近)。
例如，某些管芯在管芯表面设有外部键合焊盘(bond pad)(例如，排列为一个或多个环)，以便能够在管芯外部接入(accessible)内部I/O信号。焊线(wire bonds)的一端连接于外围键合焊盘，另一端连接于封装体的衬底或封装体的其它结构上。在一些实施例中，接触焊盘(contact pad)连接于管芯表面中部区域的热点上，但在一些实施例中，一个或多个接触焊盘可设置在管芯表面的外围区域。
图2A-2B所示为管芯朝上的BGA封装体200的实施例的剖视图。图2C是封装体200的侧面截面图。封装体200中，IC管芯102通过多条焊线114电连接于导电体(例如迹线(trace)、键合手指等)，如衬底110上表面的迹线210。衬底110上表面的导电体通过衬底110(例如通过一个或多个导电和/或非导电层)电耦合到衬底110下表面的焊球焊盘(solder ball pads)上。焊球108与焊球焊盘相连接，且与电路板(如印刷电路板(PBC)或印刷线路板，图2A-2C中未示出)相连。
如图2A所示，管芯102的上表面设有至少一个接触焊盘202，其上连接有至少一个热互连构件。在一些实施例中，管芯102可以具有任意数量的接触焊盘202，每一个都与一个热互连构件208相连。接触焊盘202位于管芯102的预先确定的热点(未示出)上。管芯102热点处的温度一般比管芯102其它部分的温度高，尽管如此，接触焊盘202也可设置在管芯102的非热点处。塑封材料112密封住封装体200。在图2B-2C的实施例中，热互连构件208被塑封材料112完全密封。
图2D-2E示出了管芯朝上的BGA IC封装体250实施例的透视图。图2F示出了封装体250的截面图。除了塑封材料112未将热互连构件208的上表面252密封住之外，封装体250与封装体200相似。在一个实施例中，塑封材料112的上面一层被移除以使互连构件208的表面252外露。在该实施例中，互连构件208的顶部被切掉，以形成平坦外露的互连构件208表面252，并且表面252与塑封材料112的上表面平齐。表面252也可称为“热接触焊盘”。封装体250的外露表面252可用于电连接(例如接地、电源或信号)到管芯102。有各种方法可将嵌在封装体塑封材料内的球状体焊料截去顶部(truncate)，包括下面将讨论的图5E中的方法。申请号为60/799，657，申请日为2006年5月12日、名称为“Interconnect Structure and Formation for PackageStacking of Molded Plastic Area Array Package”的美国临时专利申请中描述有焊球截去顶部并外露在塑封材料上表面的例子，此处全文引用其内容。
在图2A-2E所示的实施例中没加装散热器。与加装散热器(如以下所描述的)的封装体相比，其热性能有一定的差距。但是，即使在不加装散热器的情况下，对于特定的应用由于热互连构件替代了塑封材料112使得结到管壳(junction-to-case)热阻减小，因而热性能的改进也是很显著的。
例如，在一实施例中，热互连构件208是焊球，由于一般IC封装体焊球(无铅和锡/铅)的导热系数介于50～60 W/m*℃，比一般塑封材料112的导热系数(例如约为0.8 W/m*℃)高许多倍，因而结到管壳热阻降低。此外，构成热互连构件208的焊球贴装到IC管芯102上，使导热区从管芯102表面延伸至塑封材料112的上表面。对于具有小尺寸管芯102的封装体而言，当焊球替代了管芯102上表面相对来说较大面积的塑封材料112时，从而为热扩散提供了穿过封装体250上表面的散热通道，使得热性能的改进尤其显著。另外，当封装体(如200和250)的顶部安装有外部散热器，如散热片或金属板，封装体的热性能会进一步改进。有关实施例将在下一节描述。
带散热器的封装的实施例
在一些实施例中，热互连有助于半导体管芯预选位置处的能量/热量的扩散。在一个实施例中，IC管芯上至少贴装有一个热互连构件，该热互连构件连接到内嵌或贴装在封装体中或上的至少一个散热器。在一实施例中，散热器密封在塑封材料中。散热器可外露出封装体的上表面，以将热量扩散到周围环境中，包括安装散热片。作为选择，散热器也可以完全密封在塑封式IC封装体的塑封材料内。
在一些实施例中，为锁定塑封材料(与封装材料扣合)、扩散热量、减小应力和或改进可靠性，散热器可以设计成各种形状，包括孔、槽或其它表面结构。散热器可由金属材料制成，诸如铜、铜合金、常用于导线架式封装体的其它材料(C151、C194、EFTEC-64T、C7025等)、铝、其它金属或金属/合金的组合物、和或导热非金属材料。散热器可以是以柔性带材如聚酰亚胺带材为基底，在聚酰亚胺薄膜上碾压一层或多层金属箔。散热器可以由导热但不导电的材料制成，如导热陶瓷，或散热器也可以具有导电性。
在一个实施例中，集成散热器的下表面和管芯上表面之间的距离小于焊线的线弧高度(loop-height)(即从焊线弧顶到IC管芯表面的距离)。在这一实施例中，散热器的尺寸可能受到IC管芯上表面两侧焊线焊盘之间空间的限制。
在另一实施例中，散热器下表面和管芯上表面之间的距离大于焊线的线弧高度。在这种情况下，散热器的尺寸不受IC管芯表面两侧焊线焊盘之间距离的限制。即使在管芯表面的四个边缘都有焊线互连的情况下，散热器的尺寸也可以大于管芯的尺寸。较大的散热器由于散热面积大，可以提高热点冷却的效率。为利于热连接，减小IC管芯和集成散热器之间的间距，可采用面积小于管芯面积的底座，其向IC管芯上表面延伸。作为选择，热互连构件可以设置在散热器的底部，该散热器热连接于IC管芯上贴装的相应的热互连构件。
在一个实施例中，集成散热器完全密封在塑封材料中。在另一个实施例中，集成散热器透过塑封材料顶部部分外露，与图1A所示的内嵌式散热器104相似。
在一个实施例中，热互连构件具有导电性，一个或多个热互连构件可以连接于地电位或IC管芯的电源，以便从散热器上提供一条电流和片上电源的替代电路(to provide an alternative route for current or on-chip powerdelivery from the heat spreader)。这种配置的实施例在申请号为10/952，172、申请日为2004年9月29日、名称为“Die Down Ball Grid ArrayPackages And Method for Making Same”的美国专利申请中进行了描述，此处全文引用。这种配置可以有效地缩短芯片上电源电流路径的长度，从而降低IC管芯内的IR压降。
在一实施例中，散热器的尺寸小于封装塑封体的尺寸，如图3A-3C所示。作为选择，散热器的尺寸也可以与封装塑封体尺寸完全相同，或大于封装塑封体。有关这方面的实施例在申请号为10/870，927、申请日为2004年6月21日、名称为“Apparatus and Method for Thermal and ElectromagneticInterference(EMI)Shielding Enhancement in Die-Up Array Packages”的美国专利申请中进行了描述，此处全文引用。
以下几节给出在不同IC封装体中实施的本发明的几个实施例。附图及其描述只是以实施例的形式对本发明的原理进行示例说明，其目的并不是对本发明进行限制。以下所描述的许多实施例包括散热器。但是，如图2A-2F所示，本发明的某些实施例中不带集成散热器。
带集成散热器的BGA封装的实施例
图3A-3E示出了带有集成散热器302的塑封式塑胶精细间距球栅阵列(BGA)封装体，其中散热器至少部分地被塑封材料112覆盖。在图3A-3E所示的实施例中，各个封装体的散热器设置各不相同。
例如，图3A所示的封装体300带有一个平板形散热器302，其以部分嵌入的方式集成在封装体300中。散热器302具有外露(未被塑封材料112覆盖)的平坦上表面304。在封装体300中IC管芯102借助一条或多条焊线114电连接于衬底110。一个或多个热互连构件208贴装在管芯102的上表面。塑封材料112将管芯102、焊线114、衬底110上表面及热互连构件208密封住。在一实施例中，塑封材料112可采用模塑工艺、单切技术(saw singulationtechnique)或其它成型工艺在衬底110上成型。散热器302的平坦下表面306与每一个热互连构件208的顶部相连。在图3A中，散热器302被塑封材料112部分密封。散热器302的下表面和外周边与塑封材料112接触，而散热器302的上表面304未被塑封材料覆盖。散热器302的上表面304与塑封材料112的上表面平齐。
在实施例中，散热器302可部分或全部密封在塑封材料112中。此外，虽然图3A所示的为平板形，在其它实施例中，散热器302也可以是其它形状，包括规则或不规则形状、平板形或非平板形。
图3B所示的封装体350与封装体300相似，只是散热器302是以部分嵌入方式集成在封装体300中，且散热器302为非平板状。在图3B中，散热器302类似于帽状，其朝向管芯102的一面为一凹腔。散热器302的下表面306与每个热互连构件208的顶部相连。散热器302上表面304的平坦部分308未被塑封材料112覆盖，其余部分被塑封材料112覆盖。例如，散热器302外沿的倾斜侧壁部分310(其从散热器302的平坦部分延伸到外部)被塑封材料112覆盖。
图3C所示的封装体360带有一个以非嵌入方式集成在封装体360上的平板状的散热器302(与图3A相似)。散热器302的下表面306与每个热互连构件208的顶部相连。散热器302贴装在塑封材料112平坦的上表面。这样，散热器302的下表面306与塑封材料112相接触，而其余部分未与塑封材料112相接触。因而，在图3C所示的实施例中，可以在塑封材料112完成加注后再将散热器302贴装到封装体360中。
图3D所示的封装体370与封装体360相似，但是散热器302为非平板状。散热器302具有一平坦的中部区域312，其周围连接有多条导线(lead)314，在将封装体370安装到电路板上时，使用这些导线将散热器302与电路板(图3D中未示出)相连接。中部区域312的下表面306贴装在热互连构件上。散热器302上的每一条导线314都从中部区域312在肩部朝向电路板向下弯曲。每条导线314的一端都有一足部372，其从散热器302向外弯曲，便于其安装到电路板上，如直接热和/或电连接于电路板。
图3E所示为封装体380，其中热互连构件208是被截去顶部的焊球，并有外露的表面252，与图2F所示的设计相似。此外，散热器302上对应于热互连构件208的位置处设有焊盘382。焊盘382是在安装到表面252之前，预先采用材料386堆积(deposit)的。预先堆积的焊盘382可以采用导热材料386(诸如可将散热器302机械连接到热互连构件208的焊料或环氧材料)涂敷。在一个实施例中，涂敷材料386也具有导电性。在进行回流焊、固化(curing)或其它贴装工艺期间，散热器302被连接到热互连构件208。另外，在一个实施例中，可以选择在制造完成后，在散热器302下方，散热器302的下表面306和塑封材料112的上表面之间留一点儿空隙384。涂敷材料386使得散热器302处于塑封材料112上方的一段距离处，以此来提供空隙382。
带有散热器的PBGA封装的实施例
图4A-4B示出了塑封塑胶球栅阵列(PBGA)封装的实施例，其中具有至少一个连接于集成散热器302的热互连构件208。
图4A所示为根据本发明实施例的封装体400，其包含部分嵌入的散热器302。在图4A中，IC管芯102通过焊线114电连接于衬底110。管芯102与散热器302之间连接有一个或多个热互连构件208。此外，热互连构件208被截去顶部，与图2F中相关部分的描述相似，散热器302的下表面306贴装在热互连构件208的上表面252。塑封材料112采用模塑工艺成型，并密封住封装体400的大部分，包括管芯102、焊线114、衬底110的部分上表面、散热器302除平坦顶部402以外的部分。
在图4A中，散热器302为帽状，有一个朝向管芯102的凹腔474，凹腔474包围了热互连构件208、管芯102及衬底110上表面的焊线114。帽状散热器302具有平坦的顶部，向外倾斜的侧壁从平坦顶部向下延伸并包围着凹腔474，外沿部分404围绕着侧壁的底部边缘。散热器302外沿部分404的下表面借助粘合材料406(诸如环氧、粘合剂、焊料或其它粘合剂)贴装在衬底110的上表面。
散热器302可以是规则或不规则形状、平板状或非平板状。例如，图4B所示的封装体450与图4A的封装体400相似，除了散热器302为平板状之外。散热器302的上表面未被塑封材料112密封。散热器302的外边缘被塑封材料112密封。散热器302的下表面306嵌在塑封材料112中，并贴装于热互连构件208的上表面252。
带有散热器的导线架式封装的实施例
本发明的实施例可在许多种IC封装类型中实施。例如，图5A-5C示出了在导线架式封装体上集成有至少一个热互连构件208和散热器502的实施例。例如，图5A所示的封装体500中管芯102贴装在导线架516的管芯焊盘504上。导线架516包括多条导线518和管芯焊盘504。管芯102借助一条或多条焊线514电连接于管芯焊盘504和/或导线518。此外，借助一条或多条焊线514导线518可以电连接于管芯焊盘504。散热器502为帽状，具有一朝向管芯102的凹腔520。管芯102和散热器502的凹腔520下表面522借助一个或多个热互连构件208相连，该热互连构件208可以是截去顶部的也可以是未截去顶部的。
封装体500被密封在塑封材料112中，塑封材料112填充在散热器502与管芯102之间的空隙中，包括凹腔520中。散热器502的外沿部分524的下表面安装在导线架516上。如图5A所示，为改进机械连接，外沿部分524的下表面和导线架516可以设计成互锁形式。
除散热器502为平板状因而未安装到导线架516上之外，图5B所示的封装体550与图5A的封装体500相似。
除了散热器502完全嵌在塑封材料112中之外，图5C所示的封装体560与图5B的封装体550相似。
需注意的是虽然图5A-5C所示的全部为管芯朝上(即当安装到电路板上时，管芯102的电路一侧是背离电路板的)的设置，但这只是出由举例说明的目的。本发明的实施例也可以应用到管芯朝下的导线架式封装。
在另一实施例中，可在不加装集成散热器的情况下，在导线架式封装中采用一个或多个热互连构件208，与图2A-2F所示BGA封装中采用的方式相似。
带有散热器的QFN封装体的实施例
图6A和6B所示为无导线扁平封装(QDP)的实施例，也称为微导线架封装(MLP)或微导线架(MLF)IC封装，其中集成有至少一个热互连构件208和散热器602。例如，图6A所示的封装体600中，管芯102贴装在焊盘604上。管芯102借助一条或多条焊线614电连接到管芯焊盘604和/或导线616上。散热器602为帽状，具有朝向管芯102的凹腔620。管芯102和散热器602在凹腔620中的下表面622通过一个或多个热互连构件208相连，这些热互连构件208可以是截去顶部的也可以是未截去顶部的。
封装体600被密封在塑封材料112中，塑封材料112填充在散热器602与管芯102之间的空隙中，包括凹腔620中。散热器602的外沿部分624的下表面安装在导线架616上。如图6A所示，为改进机械连接，外沿部分524的下表面和导线架616可以设计成互锁形式。
除散热器602为平板状因而未安装至导线616之外，图6B所示的封装体650与图6A的封装体600相似。
IC封装制造工艺的实施例：密封后安装可选的散热器
图7A示出了本发明的制造工艺实施例的流程图700。图7B-7D示出了制造过程中各阶段的BGA封装体，以下结合图7B-D对流程700进行描述。本领域的技术人员根据本发明的教导可知，流程700可用于制造其它封装类型，可以按照其中的步骤进行，也可以更改其中的步骤。在流程700中安装散热器(步骤710)是可选步骤，可根据是否要加装散热器而决定是否进行该步骤。
流程700开始于步骤701。在步骤701中，将管芯安装到衬底上。例如管芯可以是图2A-2C所示的管芯102，可采用管芯粘合材料106将管芯贴装到衬底上。管芯粘合材料106可以是任何类型的合适的粘合材料，诸如环氧和或薄膜粘合剂、或其它类型的粘合材料或贴装机制。
在步骤702中，将热互连构件安装到管芯的上表面。例如，将一个或多个热互连构件208安装到管芯的接触焊盘202上，如图2A-2C所示。图7B示出了步骤701和702之后的完成了部分装配的封装体750的示意图。在一个实施例中，当热互连构件208为焊球时，采用传统的将焊球安装到GBA封装体底部的焊球安装工艺，将焊球安装到管芯102上。
在步骤704中，将焊线连接到管芯和衬底之间。例如可以采用焊线键合工艺借助焊线114将管芯102电连接至衬底110。图7C所示为步骤701-704之后的完成了部分装配的封装体760。
在步骤706，用塑封材料对封装体进行密封。例如，塑封材料可以是塑封材料112。如图2A-2C所示，塑封材料112将管芯102、焊线114、至少一个热互连构件208及全部或部分衬底110密封住。图7D所示为步骤701-706之后的完成了部分装配的封装体770。
在可选步骤708中，将塑封材料的顶层部分或全部移除。例如，在一实施例中，移除一层塑封材料，因而一个或多个热互连构件208的顶部被截去(即热互连构件208的顶部与塑封材料112的顶层中的一部分或整个顶层一起移除)。
图7A所示的步骤708选择性地包括步骤708a和708b之一。在可选步骤708a中，移除塑封材料的整个顶层，正如图2F所示。图7E示出了步骤708a实施方式的示例，其中采用打磨工具702打磨掉塑封材料的整个顶层，从而打磨掉热互连构件208的一部分，并使热互连构件208的表面252外露。
在可选步骤708b中，在塑封材料中形成凹腔。图7F示出了步骤708b的实施方式的示例。如图7F所示，采用刳刨(routing)工具704在塑封材料512的顶层中部刳刨出一凹腔706。在形成凹腔706的过程中，刳刨工具704刳刨掉凹腔706下方的部分热互连构件208，以使位于热互连构件208中部的表面252外露。
在一实施例中，在步骤708、708a和708b中也可以采用与上述方法不相同的其它的材料移除方法，以移除顶部塑封材料从而截去和/或外露一个或多个热互连构件。其它表面加工方法诸如刻蚀或激光加工方法可用于移除塑封材料并使热/电互连构件外露。
如上所述，步骤708(及其子步骤708a和708b)是可选的。在另一实施例中，不进行步骤708，塑封材料的顶层未被移除和/或不形成凹腔。
在可选步骤710，将散热器安装到封装体上。例如，该散热器可以是上述散热器302、502、602或702。在一个不带散热器的封装实施例中，不执行可选步骤710。当执行步骤710时，散热器被连接至一个或多个外露的热互连结构上，其中这些热互连构件可以是截去顶部的，也可以是未截去顶部的。
需注意的是，流程700中步骤可以不按照图7A中所示的顺序进行。例如，步骤704可以在热互连构件贴装到管芯(步骤702)之前执行。
图8A示出了将散热器安装到IC封装体的工艺流程800。图8B-8C中示出了制造过程中各阶段的BGA封装体的示意图，以下结合图8B-8C对流程800进行描述。本领域的技术人员根据本发明的教导可知，流程800可用于制造其它封装类型，可以按照其中的步骤进行，也可以更改其中的步骤。
流程800开始于步骤802。在步骤802中，接纳带有一个或多个预先进行过涂敷的焊盘的散热器。例如，散热器为图8B中所示的散热器302。图8B示出了完成了部分装配的封装体850和散热器302。散热器302带有焊盘，其上涂有涂敷材料386的。涂敷材料386可以是导热物质，例如焊料或环氧材料。
在步骤804中，将散热器放置在封装体上。例如，如图8C所示，散热器302被放置在完成了部分装配的封装体860上，从而涂敷材料386与热互连构件252的表面相接触。
在步骤806中，散热器的底部与封装体连接到一起。例如可采用回流焊或固化(curing)工艺将散热器连接到封装体上。回流焊或固化(curing)工艺使得散热器302连接到完成了部分装配的封装体860上形成封装体870，如图8C所示。回流焊工艺适用于以涂敷的焊料作为涂敷材料386的实施例，而固化工艺适用于涂敷材料386为环氧材料的实施例。装配后，已完成的封装体在散热器302与塑封材料112之间有一间隙384。
IC封装制造工艺的实施例：安装散热器后再密封
图9A所示为本发明制造工艺实施例的流程900。图9B-9D中示出了制造过程的各个阶段中的BGA封装体，流程900将结合图9B-9D进行描述。本领域的技术人员根据本发明的教导可知，流程900可用于制造其它封装类型，可以按照其中的步骤进行，也可以更改其中的步骤。
流程900开始于步骤902。在步骤902中，将管芯安装到衬底上。例如管芯是图3A所示的管芯102，其被安装到衬底110上。
在步骤904中，用焊线连接管芯和衬底。例如，如图3A所示，可以采用焊线键合工艺借助焊线114将管芯102电连接至衬底110。
在步骤906中，将热互连构件安装到管芯的上表面。例如，将一个或多个热互连构件208安装到管芯的接触焊盘202上。图9B示出了步骤902、904、906之后的完成了部分装配的封装体920的示例。在一个实施例中，采用传统的将焊球安装到GBA封装体底部的焊球安装工艺，将热互连构件208安装到管芯102上。
在步骤908中，将散热器安装到热互连构件上。例如，如图3A所示，散热器302被安装在热互连构件208上。在另一实施例中，散热器302可以带有预先进行过涂敷的焊盘，如图3E所示。图9C示出了步骤902-908后的完成了部分装配的封装体930的示例。
在步骤910中，将封装体密封在塑封材料中。例如，如图3A所示，塑封材料112覆盖住管芯102、焊线114、至少一个热互连构件及全部或部分衬底。图9D示出了步骤902-910后的部分装配的封装体940的示例。
需注意的是，流程900中步骤可以不按照图9A中所示的顺序进行。例如，步骤906可以在步骤704之前执行。
在另一实施例中，热互连构件在被安装到管芯之前，先安装到散热器上。图9E所示为本发明制造工艺实施例的流程950。图9F-9H中示出了制造过程的各个阶段中的BGA封装体，流程950将结合图9F-9H进行描述。本领域的技术人员根据本发明的教导可知，流程950可用于制造其它封装类型，可以按照其中的步骤进行，也可以更改其中的步骤。
流程950开始于步骤952。在步骤952中，将管芯安装到衬底上。例如管芯是图3A所示的管芯102，其被安装到衬底110上。
在步骤954中，用焊线连接管芯和衬底。例如，如图3A所示，可以采用焊线键合工艺借助焊线114将管芯102电连接至衬底110。
在步骤956中，将热互连构件安装到散热器的下表面。例如，将一个或多个热互连构件208安装到散热器302的下表面306，如图9F所示。在一个实施例中，采用传统的将焊球安装到GBA封装体底部的焊球安装工艺，将热互连构件208安装到散热器302上。在另一实施例中，散热器302带有预先进行过涂敷的焊盘(图9F中未示出)。
在步骤958中，将热互连构件安装到管芯的上表面。例如，将热互连构件208安装到管芯102上。图9G示出了步骤958之后的完成了部分装配的封装体980的示例。
在步骤960中，将封装体密封在塑封材料中。例如，采用塑封材料112覆盖住管芯102、焊线114、热互连构件208及全部或部分衬底110。图9H示出了步骤952-960后的完成了部分装配的封装体990的示例。
衬底与散热器相连的实施例
在一些实施例中，在集成电路封装中，可使用热互连构件将散热器与衬底连接起来。例如，图10A-10C是根据本发明实施例的BGA封装体的示意图，所述封装体中带有与封装体衬底热连接的散热器。图10A-10C的实施例仅是出于举例的目的。在其它实施例中，其它类型的IC封装体也可以采用热互连构件将散热器与衬底相连。另外，当热互连构件为焊球时，这些焊球可以截去项部也可以不截去顶部。其它材料，诸如铜、金、其它金属和/或金属合金，包括本文中其它部分提及的材料或其它已知材料，也可用作热互连构件。
图10A-10C所示的封装体与图3A所示的封装体300大致相似，以下仅对一些不同之处进行描述。图10A所示的封装体1000具有多个热互连构件208，其将散热器302的下表面306连接至衬底110的上表面1002。在一个实施例中，热互连构件208在衬底110与散热器302之间提供一条热传导路径，使得管芯102上产生的、并传递到衬底110的热量能够转移到散热器302上。
热互连构件208可以在衬底110的非导电位置处和/或导电位置处连接到衬底110上表面1002。例如，热互连构件208的下表面可以贴装到衬底110的阻焊层或绝缘层的表面，其通常不具有导电性，且导热性能相对较低。在另一例子中，热互连构件208的下表面可以贴装到衬底110的导电体1004(如迹线(trace)、键合手指、接触焊盘、接地/电环(power ring)等)上，该导电体1004通常由金属制成(例如金属箔、涂敷层等)，诸如铜、铝、金、锡、镍、银、其它金属或金属的组合物/合金。
在一个实施例中，热互连构件208将衬底110的导电体1004连接到散热器302，当热互连构件208是导电体时，该热互连构件208可以提供通向散热器302的导电路径。
如图10A所示，散热器302的面积小于塑封材料112上表面的面积，因而塑封材料112上表面的外周未被散热器302覆盖。除了散热器302的面积与塑封材料112的上表面的面积相同之外，图10B所示的封装体1010与图10A的封装体1000相似。
实施例中，可以使用任意数量的热互连构件208将散热器302连接到衬底110上，包括使用热互连构件208的阵列。例如，在图10A和10B中，一对热互连构件208环围绕着衬底110上表面的管芯102。需要时，可使用任意数量的这种热互连构件208环。除了衬底110上表面的管芯102的周围环绕着单一热互连构件208环之外，图10C所示的封装体1020与图10B的封装体1010相似。
在一些实施例中，可以对流程700、900和950进行更改，使其包括形成/贴装热互连构件至散热器和/或衬底的步骤，用于将散热器连接于衬底。
要强调的是，虽然图10A-10C所示的热互连构件208连接于衬底和散热器302之间，封装体1000、1010、1020也可以包括将管芯102上表面连接到散热器302的热互连构件208。
结束语
本发明是通过一些实施例进行描述的，应当理解，其目的仅在于举例说明，而没有限制性。本领域的技术人员知悉，在不脱离本发明的精神和范围情况下，在形式上和细节上还可做各种改变。因此，本发明的保护范围不应当仅局限于以上描述的任一实施例，而应该依照权利要求及其等同来限定。

Claims (6)

1.一种集成电路(IC)封装体，其特征在于，包括：
带有接触焊盘的IC管芯，其中所述接触焊盘位于IC管芯表面的热点处，所述热点包括根据不同的应用对IC管芯工作期间进行热分析和测量预先定位得到的至少一个热点，在管芯工作期间所述热点处的温度高于管芯表面的其它部位的温度；或者根据绘制IC管芯的功能模块图来确定至少一个热点；及
连接于所述接触焊盘的热互连构件，所述热互连构件连接到内嵌或贴装在封装体中或上的至少一个散热器，所述散热器与所述热互联结构相对应部位有一处或多处涂敷材料；所述热互连构件包括内核材料及包覆该内核的键合材料；所述热互连构件具有导电性，一个或多个所述热互连构件可以连接于地电位或IC管芯的电源；
IC管芯通过多条焊线电连接于衬底上表面的导电体，散热器下表面和管芯上表面之间的距离大于焊线的线弧高度。
2.根据权利要求1所述的集成电路(IC)封装体，其特征在于，所述热互连构件使得在管芯工作期间所述热点处的温度能够降低为其它部位的温度。
3.根据权利要求1所述的集成电路(IC)封装体，其特征在于，还包括：
密封管芯和至少一部分热互连构件的塑封材料。
4.根据权利要求1所述的集成电路(IC)封装体，其特征在于，所述热互连构件电连接于和热连接于所述接触焊盘。
5.一种制造集成电路(IC)封装体的方法，其特征在于，包括以下步骤：
(a)将IC管芯贴装到衬底上，所述IC管芯表面的热点处设置有接触焊盘，在管芯工作期间所述热点处的辐射热量高于管芯表面其它部位的辐射热量，所述热点包括根据不同的应用对IC管芯工作期间进行热分析和测量预先定位得到的至少一个热点；或者根据绘制IC管芯的功能模块图来确定至少一个热点；
(b)在管芯和衬底之间连接至少一条焊线；
(c)将热互连构件与所述接触焊盘相连；
(d)将管芯、至少一条焊线和至少一部分热互连构件密封在密封材料中，所述热互连构件连接到内嵌或贴装在封装体中或上的至少一个散热器，所述散热器与所述热互联结构相对应部位有一处或多处涂敷材料；所述热互连构件包括内核材料及包覆该内核的键合材料；所述热互连构件具有导电性，一个或多个所述热互连构件可以连接于地电位或IC管芯的电源；散热器下表面和管芯上表面之间的距离大于焊线的线弧高度。
6.根据权利要求5所述的方法，其特征在于，还包括以下步骤：
(e)至少裸露出一个热互连构件。
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KR100963207B1 (ko) 2010-06-16
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HK1119482A1 (en) 2009-03-06
US20070290322A1 (en) 2007-12-20
KR20070120917A (ko) 2007-12-26
TWI423404B (zh) 2014-01-11
CN101127334A (zh) 2008-02-20
EP1870933A2 (en) 2007-12-26
TW200818427A (en) 2008-04-16

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