CN115708420A - 芯片封装结构及其制备方法、封装系统 - Google Patents

芯片封装结构及其制备方法、封装系统 Download PDF

Info

Publication number
CN115708420A
CN115708420A CN202180019511.6A CN202180019511A CN115708420A CN 115708420 A CN115708420 A CN 115708420A CN 202180019511 A CN202180019511 A CN 202180019511A CN 115708420 A CN115708420 A CN 115708420A
Authority
CN
China
Prior art keywords
chip
package
packaging
substrate
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180019511.6A
Other languages
English (en)
Inventor
康乐
刘晓国
袁灵成
徐斌
贺志强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN115708420A publication Critical patent/CN115708420A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

本申请提供了一种芯片封装结构及其制备方法、封装系统，其芯片封装结构。包括封装基板、芯片Die和第一封装体；封装基板具有相对的第一表面和第二表面；芯片耦合于封装基板，芯片具有热点；封装基板的第一表面设置有散热连接点，封装基板内形成有连通散热连接点与热点的导热通道；第二表面设置有用于外接器件的第一连接端子；第一封装体设置于第一表面，且第一封装体内形成有导热结构，导热结构自散热连接点延伸至第一封装体的表面。由于散热连接点与芯片的热点位置对应，通过散热连接点和导热结构可以对芯片的热点进行针对性散热；导热结构可以灵活设置，其结构形成能够与芯片封装结构的制作流程紧密结合。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202180019511.6A 2021-06-18 2021-06-18 芯片封装结构及其制备方法、封装系统 Pending CN115708420A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/100936 WO2022261947A1 (zh) 2021-06-18 2021-06-18 芯片封装结构及其制备方法、封装系统

Publications (1)

Publication Number Publication Date
CN115708420A true CN115708420A (zh) 2023-02-21

Family

ID=84526034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180019511.6A Pending CN115708420A (zh) 2021-06-18 2021-06-18 芯片封装结构及其制备方法、封装系统

Country Status (4)

Country Link
US (1) US20240194562A1 (zh)
EP (1) EP4318569A4 (zh)
CN (1) CN115708420A (zh)
WO (1) WO2022261947A1 (zh)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3947525B2 (ja) * 2003-04-16 2007-07-25 沖電気工業株式会社 半導体装置の放熱構造
US9013035B2 (en) * 2006-06-20 2015-04-21 Broadcom Corporation Thermal improvement for hotspots on dies in integrated circuit packages
CN100578771C (zh) * 2006-11-22 2010-01-06 南亚电路板股份有限公司 嵌入式芯片封装结构
US7960827B1 (en) * 2009-04-09 2011-06-14 Amkor Technology, Inc. Thermal via heat spreader package and method
US9129929B2 (en) * 2012-04-19 2015-09-08 Sony Corporation Thermal package with heat slug for die stacks
US20160276308A1 (en) * 2015-03-17 2016-09-22 Samsung Electronics Co., Ltd. Thermally enhanced package-on-package structure
KR102411999B1 (ko) * 2015-04-08 2022-06-22 삼성전기주식회사 회로기판
US10347574B2 (en) * 2017-09-28 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out packages
US11226162B2 (en) * 2018-04-19 2022-01-18 Intel Corporation Heat dissipation device having anisotropic thermally conductive sections and isotropic thermally conductive sections
CN112614814B (zh) * 2020-12-15 2022-06-28 华进半导体封装先导技术研发中心有限公司 功率芯片散热封装结构及其制作方法

Also Published As

Publication number Publication date
EP4318569A4 (en) 2024-05-22
US20240194562A1 (en) 2024-06-13
EP4318569A1 (en) 2024-02-07
WO2022261947A1 (zh) 2022-12-22

Similar Documents

Publication Publication Date Title
US10297573B2 (en) Three-dimensional package structure and the method to fabricate thereof
KR101874057B1 (ko) 패키지 적층체를 구비한 집적회로 패키지 시스템 및 그 제조 방법
TWI343105B (en) Metal core foldover package structures, systems including same and methods of fabrication
US7511365B2 (en) Thermal enhanced low profile package structure
KR101237669B1 (ko) 개재 굴곡 접착 요소를 갖는 다른 집적 회로 상에 하나의 집적 회로를 갖는 구조
TWI480960B (zh) 具有中央觸點及改良之熱特性之增強之堆疊式微電子組件
US7551455B2 (en) Package structure
CN101228627B (zh) 具有散热器的电子模块组件、便携式电子通信设备和印刷电路板
WO2021068657A1 (zh) 封装结构和电子装置
US20150103498A1 (en) Power module package and method of manufacturing the same
US9837378B2 (en) Fan-out 3D IC integration structure without substrate and method of making the same
US20230260693A1 (en) MAGNETIC DEVICE and STACKED ELECTRONIC STRUCTURE
CN103227164A (zh) 半导体封装构造及其制造方法
CN210743941U (zh) 层叠封装结构
CN110602923B (zh) 封装模块及其封装方法、电子设备
JP2003188342A (ja) 半導体装置
CN115708420A (zh) 芯片封装结构及其制备方法、封装系统
CN103050454A (zh) 堆迭封装构造
US9922945B2 (en) Methods, circuits and systems for a package structure having wireless lateral connections
CN112312678A (zh) 无封装芯片直埋印制电路板的结构和方法、芯片封装结构
CN113540069B (zh) 芯片叠层封装结构和芯片叠层封装方法
CN114914234A (zh) 一种功率结构体和制备方法以及设备
CN113540068A (zh) 器件堆叠封装结构和器件堆叠封装方法
CN116779453A (zh) 高导热嵌埋结构及其制作方法
CN116779551A (zh) 功率模组的集成封装结构及其集成封装方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination