CN101039769A - 制备电子管金属粉末的方法 - Google Patents
制备电子管金属粉末的方法 Download PDFInfo
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- CN101039769A CN101039769A CNA2005800344431A CN200580034443A CN101039769A CN 101039769 A CN101039769 A CN 101039769A CN A2005800344431 A CNA2005800344431 A CN A2005800344431A CN 200580034443 A CN200580034443 A CN 200580034443A CN 101039769 A CN101039769 A CN 101039769A
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- powder
- tantalum
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- magnesium
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- 239000000843 powder Substances 0.000 title claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 64
- 239000002184 metal Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052987 metal hydride Inorganic materials 0.000 claims abstract description 20
- 150000004681 metal hydrides Chemical class 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 28
- 229910052749 magnesium Inorganic materials 0.000 claims description 26
- 239000011777 magnesium Substances 0.000 claims description 26
- 238000007493 shaping process Methods 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 21
- 238000005245 sintering Methods 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- 230000009467 reduction Effects 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000006392 deoxygenation reaction Methods 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910012375 magnesium hydride Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000010405 anode material Substances 0.000 abstract description 2
- 239000003792 electrolyte Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 22
- 238000009826 distribution Methods 0.000 description 17
- 238000006722 reduction reaction Methods 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000000428 dust Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 8
- 239000003570 air Substances 0.000 description 7
- 239000008187 granular material Substances 0.000 description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 102220042174 rs141655687 Human genes 0.000 description 1
- 102220076495 rs200649587 Human genes 0.000 description 1
- 102220043159 rs587780996 Human genes 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
- B22F9/22—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds using gaseous reductors
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1204—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 preliminary treatment of ores or scrap to eliminate non- titanium constituents, e.g. iron, without attacking the titanium constituent
- C22B34/1209—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 preliminary treatment of ores or scrap to eliminate non- titanium constituents, e.g. iron, without attacking the titanium constituent by dry processes, e.g. with selective chlorination of iron or with formation of a titanium bearing slag
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B4/00—Electrothermal treatment of ores or metallurgical products for obtaining metals or alloys
- C22B4/08—Apparatus
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/10—Dry methods smelting of sulfides or formation of mattes by solid carbonaceous reducing agents
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/12—Dry methods smelting of sulfides or formation of mattes by gases
- C22B5/14—Dry methods smelting of sulfides or formation of mattes by gases fluidised material
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/18—Reducing step-by-step
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
- C22B9/05—Refining by treating with gases, e.g. gas flushing also refining by means of a material generating gas in situ
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
实施例编号 | 还原反应条件 | 初级粉末的产品性质 | ||||||
气压 | 反应器温度 | 持续时间 | 比表面积 | Master Sizer | O2含量 | |||
D10 | D50 | D90 | ||||||
hPa | ℃ | H | m2/g | μm | μm | μm | μg/m2 | |
1 | 50 | 700 | 8 | 13.4 | 14.6 | 30.5 | 52.7 | 3441 |
2 | 200 | 750 | 8 | 10.1 | 16.0 | 33.1 | 66.0 | 2765 |
3 | 350 | 750 | 8 | 12.3 | 14.9 | 31.1 | 53.4 | 3064 |
4 | 500 | 780 | 8 | 7.3 | 14.2 | 29.7 | 49.7 | 4063 |
5 | 500 | 840 | 8 | 6.3 | 12.9 | 26.9 | 43.7 | 2492 |
6 | 550 | 860 | 8 | 4.4 | 11.8 | 26.8 | 44.8 | 2654 |
7 | 580 | 880 | 8 | 4.7 | 9.3 | 26.6 | 48.4 | 2787 |
8 | 580 | 900 | 8 | 3.8 | 16.2 | 32.7 | 59.7 | 2872 |
9 | 1000 | 940 | 8 | 2.7 | 16.7 | 34.6 | 60.3 | 2798 |
10 | 200 | 750 | 8 | 12.8 | 33.9 | 128.3 | 244.1 | 2843 |
11 | 350 | 750 | 8 | 12.1 | 31.6 | 134.2 | 252.6 | 2974 |
12 | 500 | 780 | 8 | 8.4 | 36.8 | 137.5 | 260.1 | 2756 |
实施例编号 | 脱氧条件 | 脱氧后的粉末性质 | |||||||
粉末温度 | 镁温度 | 气压 | 持续时间 | MasterSizer | 比表面积 | 堆积密度 | |||
D10 | D50 | D90 | |||||||
℃ | ℃ | hPa | H | μm | μm | μm | m2/g | g/英寸3 | |
1 | 850 | 800 | 200 | 3 | 17.3 | 46.8 | 86.5 | 7.8 | 25.4 |
2 | 850 | 800 | 200 | 3 | 16.5 | 37.4 | 66.2 | 6.6 | 26.7 |
3 | 850 | 800 | 200 | 3 | 19.1 | 36.5 | 72.3 | 6.1 | 30.8 |
4 | 850 | 820 | 250 | 2.5 | 14.8 | 34.3 | 65.7 | 4.2 | 32.2 |
5 | 850 | 820 | 250 | 2.5 | 15.4 | 31.8 | 77.8 | 3.6 | 31.4 |
6a | 850 | 840 | 300 | 2 | 14.3 | 37.6 | 64.9 | 3.0 | 30.7 |
6b | 760 | 750 | 200 | 4 | 12.2 | 29.7 | 51.8 | 3.5 | 31.8 |
7a | 850 | 840 | 300 | 2 | 15.3 | 34.7 | 70.1 | 3.2 | 34.6 |
7b | 720 | 700 | 200 | 4.5 | 14.9 | 32.4 | 58.3 | 3.9 | 34.3 |
8a | 850 | 840 | 300 | 2 | 17.9 | 36.3 | 62.7 | 2.2 | 33.2 |
8b | 740 | 720 | 200 | 4.5 | 16.9 | 33.7 | 61.9 | 2.8 | 34.7 |
9 | 850 | 850 | 300 | 2 | 16.2 | 33.9 | 68.9 | 1.9 | 33.8 |
10 | 850 | 800 | 250 | 2 | 34.8 | 128.3 | 259.5 | 7.6 | 26.2 |
11 | 850 | 800 | 250 | 2 | 33.2 | 131.7 | 262.0 | 6.9 | 25.7 |
12 | 850 | 800 | 250 | 2 | 31.9 | 127.9 | 248.1 | 5.5 | 31.3 |
实施例编号 | 化学分析ppm | ||||||||||
C | H | Mg | N | O | P | Na | K | Fe | Cr | Ni | |
1 | 22 | 248 | 31 | 245 | 22537 | 153 | <0.5 | <0.5 | 8 | <3 | <3 |
2 | 23 | 256 | 28 | 221 | 19411 | 155 | <0.5 | <0.5 | 7 | <3 | <3 |
3 | 21 | 232 | 24 | 267 | 18557 | 151 | <0.5 | <0.5 | 2 | <3 | <3 |
4 | 24 | 198 | 23 | 287 | 12274 | 152 | <0.5 | <0.5 | 9 | <3 | <3 |
5 | 29 | 227 | 25 | 202 | 10577 | 152 | <0.5 | <0.5 | 6 | <3 | <3 |
6a | 23 | 242 | 28 | 289 | 6843 | 150 | <0.5 | <0.5 | 7 | <3 | <3 |
7a | 22 | 236 | 22 | 246 | 7702 | 154 | <0.5 | <0.5 | 8 | <3 | <3 |
8a | 25 | 241 | 28 | 227 | 6433 | 152 | <0.5 | <0.5 | 9 | <3 | <3 |
9 | 21 | 207 | 28 | 265 | 5498 | 150 | <0.5 | <0.5 | 7 | <3 | <3 |
10 | 23 | 215 | 27 | 258 | 22904 | 155 | <0.5 | <0.5 | 4 | <3 | <3 |
11 | 26 | 264 | 25 | 224 | 20344 | 157 | <0.5 | <0.5 | 8 | <3 | <3 |
12 | 24 | 217 | 28 | 243 | 16210 | 154 | <0.5 | <0.5 | 8 | <3 | <3 |
实施例编号 | 电容器成形电压10V | 电容器成形电压16V | ||
比容量 | 比残余电流 | 比容量 | 比残余电流 | |
μFV/g | nA/μFV | μFV/g | nA/μFV | |
1 | 342745 | 0.96 | - | - |
2 | 312563 | 0.48 | - | - |
3 | 294334 | 0.47 | 243988 | 0.41 |
4 | 226284 | 0.45 | 194374 | 0.53 |
5 | 198544 | 0.44 | 185592 | 0.46 |
6a | 151583 | 0.48 | 146745 | 0.61 |
6b | 182752 | 0.53 | 172991 | 0.52 |
7a | 171997 | 0.85 | 163237 | 0.74 |
7b | 207872 | 0.64 | 186473 | 0.65 |
8a | 137664 | 0.54 | 124538 | 0.47 |
8b | 148764 | 0.62 | 136421 | 0.44 |
9 | 125382 | 0.43 | 119231 | 0.47 |
10 | 338892 | 0.61 | - | - |
11 | 308245 | 0.56 | 241257 | 0.45 |
12 | 298677 | 0.48 | 238230 | 0.46 |
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PCT/EP2005/010362 WO2006039999A1 (de) | 2004-10-08 | 2005-09-24 | Verfahren zur herstellung von ventilmetallpulvern |
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US (2) | US10032564B2 (zh) |
EP (2) | EP2292355B1 (zh) |
JP (3) | JP5888830B2 (zh) |
KR (1) | KR101311146B1 (zh) |
CN (2) | CN101039769B (zh) |
AP (1) | AP2027A (zh) |
AU (2) | AU2005293876B2 (zh) |
BR (2) | BRPI0518166B1 (zh) |
DE (1) | DE102004049039B4 (zh) |
IL (1) | IL182221A0 (zh) |
MX (1) | MX2007003961A (zh) |
PT (1) | PT1802412E (zh) |
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CN105014089A (zh) * | 2014-04-28 | 2015-11-04 | 湖南华威景程材料科技有限公司 | 一种真空碳还原制备金属铪粉的方法 |
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Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3140248C2 (de) * | 1981-10-09 | 1986-06-19 | Hermann C. Starck Berlin, 1000 Berlin | Verwendung von dotiertem Ventilmetallpulver für die Herstellung von Elektrolytkondensatoranoden |
DE3330455A1 (de) * | 1983-08-24 | 1985-03-14 | GfE Gesellschaft für Elektrometallurgie mbH, 4000 Düsseldorf | Verfahren zur herstellung von ventilmetallpulver fuer elektrolytkondensatoren und dergleichen |
US4722756A (en) | 1987-02-27 | 1988-02-02 | Cabot Corp | Method for deoxidizing tantalum material |
US5242481A (en) * | 1989-06-26 | 1993-09-07 | Cabot Corporation | Method of making powders and products of tantalum and niobium |
CN1023548C (zh) * | 1989-11-20 | 1994-01-19 | 宁夏有色金属冶炼厂 | 电容器级钽粉的生产方法 |
JPH0897096A (ja) * | 1994-09-28 | 1996-04-12 | Sutaruku Buitetsuku Kk | タンタル粉末及びそれを用いた電解コンデンサ |
US6051326A (en) * | 1997-04-26 | 2000-04-18 | Cabot Corporation | Valve metal compositions and method |
CN1258417C (zh) * | 1998-05-06 | 2006-06-07 | H·C·施塔克公司 | 金属粉末的制备方法 |
WO2000067936A1 (en) | 1998-05-06 | 2000-11-16 | H.C. Starck, Inc. | Metal powders produced by the reduction of the oxides with gaseous magnesium |
US6171363B1 (en) * | 1998-05-06 | 2001-01-09 | H. C. Starck, Inc. | Method for producing tantallum/niobium metal powders by the reduction of their oxides with gaseous magnesium |
BRPI9917635B1 (pt) * | 1998-05-06 | 2017-06-06 | Starck H C Gmbh Co Kg | pó de nióbio na forma de partículas aglomeradas primárias e método para a obtenção de um anodo de capacitor |
US6322912B1 (en) * | 1998-09-16 | 2001-11-27 | Cabot Corporation | Electrolytic capacitor anode of valve metal oxide |
DE19847012A1 (de) * | 1998-10-13 | 2000-04-20 | Starck H C Gmbh Co Kg | Niobpulver und Verfahren zu dessen Herstellung |
JP3871824B2 (ja) | 1999-02-03 | 2007-01-24 | キャボットスーパーメタル株式会社 | 高容量コンデンサー用タンタル粉末 |
US6558447B1 (en) * | 1999-05-05 | 2003-05-06 | H.C. Starck, Inc. | Metal powders produced by the reduction of the oxides with gaseous magnesium |
JP3641190B2 (ja) * | 2000-05-18 | 2005-04-20 | 三井金属鉱業株式会社 | タンタル/ニオブ含有原料の処理方法 |
JP4828016B2 (ja) | 2000-08-09 | 2011-11-30 | キャボットスーパーメタル株式会社 | タンタル粉末の製法、タンタル粉末およびタンタル電解コンデンサ |
JP2002060803A (ja) * | 2000-08-10 | 2002-02-28 | Showa Kyabotto Super Metal Kk | 電解コンデンサ用タンタル焼結体の製造方法 |
JP2002134360A (ja) * | 2000-10-24 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 固体電解コンデンサおよびその製造方法 |
RU2302928C2 (ru) * | 2001-05-04 | 2007-07-20 | Х.Ц. Штарк, Инк. | Металлотермическое восстановление окислов тугоплавких металлов |
JP2003013115A (ja) * | 2001-06-28 | 2003-01-15 | Sumitomo Metal Mining Co Ltd | ニオブ及び/又はタンタル粉末の製造方法 |
US6478845B1 (en) * | 2001-07-09 | 2002-11-12 | Osram Sylvania Inc. | Boron addition for making potassium-doped tungsten |
CN1169643C (zh) * | 2001-09-29 | 2004-10-06 | 宁夏东方钽业股份有限公司 | 高比表面积钽粉和/或铌粉的制备方法 |
JP3610942B2 (ja) * | 2001-10-12 | 2005-01-19 | 住友金属鉱山株式会社 | ニオブおよび/またはタンタルの粉末の製造法 |
JP2003213309A (ja) * | 2002-01-18 | 2003-07-30 | Japan Metals & Chem Co Ltd | 多孔質金属ニオブ粉末の製造方法及び多孔質金属ニオブ粉末 |
DE10307716B4 (de) * | 2002-03-12 | 2021-11-18 | Taniobis Gmbh | Ventilmetall-Pulver und Verfahren zu deren Herstellung |
CN100528417C (zh) * | 2003-06-10 | 2009-08-19 | 卡伯特公司 | 钽粉及其制造方法 |
DE102004020052B4 (de) * | 2004-04-23 | 2008-03-06 | H.C. Starck Gmbh | Verfahren zur Herstellung von Niob- und Tantalpulver |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102832048A (zh) * | 2006-08-16 | 2012-12-19 | H·C·施塔克有限公司 | 具有结构化的烧结-活性表面的半成品以及它们的制造方法 |
CN102832048B (zh) * | 2006-08-16 | 2016-04-13 | H·C·施塔克有限公司 | 具有结构化的烧结-活性表面的半成品以及它们的制造方法 |
CN103084568A (zh) * | 2012-12-05 | 2013-05-08 | 江门富祥电子材料有限公司 | 具有冷却器的钽粉镁还原降氧装置及钽粉镁还原降氧方法 |
CN105014089A (zh) * | 2014-04-28 | 2015-11-04 | 湖南华威景程材料科技有限公司 | 一种真空碳还原制备金属铪粉的方法 |
CN107109525A (zh) * | 2014-12-19 | 2017-08-29 | 韩国生产技术研究院 | 使用液态金属的还原装置 |
US10689729B2 (en) | 2014-12-19 | 2020-06-23 | Korea Institute Of Industrial Technology | Reduction device using liquid metal |
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