CN101019225A - 半导体器件及制作该种半导体器件的方法 - Google Patents
半导体器件及制作该种半导体器件的方法 Download PDFInfo
- Publication number
- CN101019225A CN101019225A CNA2005800282011A CN200580028201A CN101019225A CN 101019225 A CN101019225 A CN 101019225A CN A2005800282011 A CNA2005800282011 A CN A2005800282011A CN 200580028201 A CN200580028201 A CN 200580028201A CN 101019225 A CN101019225 A CN 101019225A
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- CN
- China
- Prior art keywords
- compound
- electric conducting
- conducting material
- molybdenum
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
Abstract
Description
Claims (11)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04104056 | 2004-08-24 | ||
EP04104056.9 | 2004-08-24 | ||
EP04104489.2 | 2004-09-16 | ||
EP04104489 | 2004-09-16 | ||
PCT/IB2005/052646 WO2006021906A1 (en) | 2004-08-24 | 2005-08-10 | Semiconductor device and method of manufacturing such a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101019225A true CN101019225A (zh) | 2007-08-15 |
CN101019225B CN101019225B (zh) | 2011-01-26 |
Family
ID=35285280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800282011A Active CN101019225B (zh) | 2004-08-24 | 2005-08-10 | 半导体器件及制作该种半导体器件的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7763944B2 (zh) |
EP (1) | EP1784857B1 (zh) |
JP (1) | JP2008515173A (zh) |
CN (1) | CN101019225B (zh) |
TW (1) | TW200620558A (zh) |
WO (1) | WO2006021906A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0625004D0 (en) | 2006-12-15 | 2007-01-24 | Nxp Bv | Semiconductor device and method of manufacture |
JP2008251955A (ja) * | 2007-03-30 | 2008-10-16 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP5414053B2 (ja) * | 2007-12-07 | 2014-02-12 | 独立行政法人物質・材料研究機構 | 金属電極及びこれを用いた半導体素子 |
US8802522B2 (en) * | 2010-09-10 | 2014-08-12 | Applied Materials, Inc. | Methods to adjust threshold voltage in semiconductor devices |
US9099661B2 (en) | 2011-04-07 | 2015-08-04 | The Trustees Of Columbia University In The City Of New York | OFET including PVDF-TRFE-CFE dielectric |
FR3072687A1 (fr) * | 2017-10-20 | 2019-04-26 | Thales | Procede de realisation d'au moins une monocouche d'un materiau bidimensionnel et dispositif associe |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0198229A (ja) * | 1987-10-09 | 1989-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
US5789312A (en) * | 1996-10-30 | 1998-08-04 | International Business Machines Corporation | Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics |
JP3523093B2 (ja) * | 1997-11-28 | 2004-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
US6121094A (en) * | 1998-07-21 | 2000-09-19 | Advanced Micro Devices, Inc. | Method of making a semiconductor device with a multi-level gate structure |
US6171910B1 (en) * | 1999-07-21 | 2001-01-09 | Motorola Inc. | Method for forming a semiconductor device |
US6187617B1 (en) * | 1999-07-29 | 2001-02-13 | International Business Machines Corporation | Semiconductor structure having heterogeneous silicide regions and method for forming same |
US6458695B1 (en) * | 2001-10-18 | 2002-10-01 | Chartered Semiconductor Manufacturing Ltd. | Methods to form dual metal gates by incorporating metals and their conductive oxides |
JP2003273350A (ja) * | 2002-03-15 | 2003-09-26 | Nec Corp | 半導体装置及びその製造方法 |
JP3651802B2 (ja) * | 2002-09-12 | 2005-05-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2004207481A (ja) * | 2002-12-25 | 2004-07-22 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US6967131B2 (en) * | 2003-10-29 | 2005-11-22 | International Business Machines Corp. | Field effect transistor with electroplated metal gate |
US7067379B2 (en) * | 2004-01-08 | 2006-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide gate transistors and method of manufacture |
US20060084217A1 (en) * | 2004-10-20 | 2006-04-20 | Freescale Semiconductor, Inc. | Plasma impurification of a metal gate in a semiconductor fabrication process |
-
2005
- 2005-08-10 US US11/574,245 patent/US7763944B2/en active Active
- 2005-08-10 WO PCT/IB2005/052646 patent/WO2006021906A1/en active Application Filing
- 2005-08-10 EP EP05773559A patent/EP1784857B1/en active Active
- 2005-08-10 JP JP2007529059A patent/JP2008515173A/ja not_active Withdrawn
- 2005-08-10 CN CN2005800282011A patent/CN101019225B/zh active Active
- 2005-08-19 TW TW094128308A patent/TW200620558A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101019225B (zh) | 2011-01-26 |
TW200620558A (en) | 2006-06-16 |
US20080211032A1 (en) | 2008-09-04 |
WO2006021906A1 (en) | 2006-03-02 |
US7763944B2 (en) | 2010-07-27 |
EP1784857A1 (en) | 2007-05-16 |
EP1784857B1 (en) | 2012-07-11 |
JP2008515173A (ja) | 2008-05-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20080404 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20080404 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: IMEC CORP. Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20120326 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120326 Address after: Leuven Patentee after: IMEC Corp. Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |