CN100593902C - 射频功率放大器 - Google Patents
射频功率放大器 Download PDFInfo
- Publication number
- CN100593902C CN100593902C CN200610084725A CN200610084725A CN100593902C CN 100593902 C CN100593902 C CN 100593902C CN 200610084725 A CN200610084725 A CN 200610084725A CN 200610084725 A CN200610084725 A CN 200610084725A CN 100593902 C CN100593902 C CN 100593902C
- Authority
- CN
- China
- Prior art keywords
- radio
- power amplifier
- frequency power
- transistor
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 44
- 230000005540 biological transmission Effects 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 241001125929 Trisopterus luscus Species 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 101000892439 Homo sapiens Taste receptor type 2 member 10 Proteins 0.000 description 2
- 101000766349 Homo sapiens Tribbles homolog 2 Proteins 0.000 description 2
- 101000634859 Mus musculus Taste receptor type 2 member 103 Proteins 0.000 description 2
- 102100026394 Tribbles homolog 2 Human genes 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21178—Power transistors are made by coupling a plurality of single transistors in parallel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP148103/2005 | 2005-05-20 | ||
JP2005148103A JP2006325096A (ja) | 2005-05-20 | 2005-05-20 | 高周波電力増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1866729A CN1866729A (zh) | 2006-11-22 |
CN100593902C true CN100593902C (zh) | 2010-03-10 |
Family
ID=36709591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610084725A Expired - Fee Related CN100593902C (zh) | 2005-05-20 | 2006-05-19 | 射频功率放大器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7449957B2 (zh) |
EP (1) | EP1727278B1 (zh) |
JP (1) | JP2006325096A (zh) |
CN (1) | CN100593902C (zh) |
DE (1) | DE602006016892D1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007300159A (ja) * | 2006-04-27 | 2007-11-15 | Sharp Corp | 回路ユニット、電源バイアス回路、lnb、およびトランスミッタ |
US7598809B2 (en) * | 2007-11-30 | 2009-10-06 | Silicon Storage Technology, Inc. | RF power amplifier |
JP2009260639A (ja) * | 2008-04-16 | 2009-11-05 | Mitsubishi Electric Corp | 高周波増幅器 |
JP2010124433A (ja) * | 2008-11-21 | 2010-06-03 | Panasonic Corp | 高周波電力増幅器 |
CN101656514B (zh) * | 2009-09-07 | 2011-09-28 | 东南大学 | 一种基于匹配共享增益可控的并联型射频功率放大器 |
JP2011155482A (ja) * | 2010-01-27 | 2011-08-11 | Tdk Corp | 電力増幅器 |
CN101847967A (zh) * | 2010-05-31 | 2010-09-29 | 锐迪科科技有限公司 | 射频功率放大器电路 |
CN101876834B (zh) * | 2010-06-23 | 2014-03-12 | 中兴通讯股份有限公司 | 跟踪电源装置和控制方法 |
JP5655526B2 (ja) * | 2010-11-29 | 2015-01-21 | 住友電気工業株式会社 | 電子回路 |
KR101444520B1 (ko) * | 2012-02-09 | 2014-09-24 | 삼성전기주식회사 | 증폭 회로 및 그 동작 방법 |
CN103326675A (zh) * | 2013-06-21 | 2013-09-25 | 苏州广帝科微电子有限公司 | 线性射频功率放大器 |
JP2017183839A (ja) * | 2016-03-28 | 2017-10-05 | 株式会社村田製作所 | 電力増幅回路 |
US10873296B2 (en) | 2016-12-30 | 2020-12-22 | Richwave Technology Corp. | Amplifier device |
TWI664806B (zh) * | 2016-12-30 | 2019-07-01 | 立積電子股份有限公司 | 放大器裝置 |
EP3346608B1 (en) * | 2017-01-09 | 2021-05-26 | Nxp B.V. | Rf amplifier |
JP2019129402A (ja) * | 2018-01-24 | 2019-08-01 | 株式会社村田製作所 | 歪補償回路 |
CN108599729A (zh) * | 2018-06-25 | 2018-09-28 | 浙江大学 | 增大功率放大器输出功率以驱动发射换能器的电路结构 |
CN111277227B (zh) * | 2020-03-18 | 2024-07-05 | 锐石创芯(深圳)科技股份有限公司 | 一种改善相位特性的共射共基放大电路及信号处理系统 |
CN114142818A (zh) * | 2021-10-14 | 2022-03-04 | 深圳飞骧科技股份有限公司 | 应用于5G-Sub6G频段通信系统的射频功率放大器 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0427349A (ja) | 1990-05-22 | 1992-01-30 | Sanyo Electric Co Ltd | 冷菓製造装置 |
US5321279A (en) | 1992-11-09 | 1994-06-14 | Texas Instruments Incorporated | Base ballasting |
US5608353A (en) | 1995-03-29 | 1997-03-04 | Rf Micro Devices, Inc. | HBT power amplifier |
JP2001127071A (ja) * | 1999-08-19 | 2001-05-11 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3851073B2 (ja) * | 1999-10-29 | 2006-11-29 | 株式会社ルネサステクノロジ | 無線通信装置及び半導体装置 |
JP2001274639A (ja) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | 半導体電力増幅器および多段モノリシック集積回路 |
JP3641184B2 (ja) * | 2000-03-28 | 2005-04-20 | 株式会社東芝 | バイポーラトランジスタを用いた高周波電力増幅器 |
US6538515B2 (en) * | 2001-01-19 | 2003-03-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Power amplifier and method of operating a power amplifier having multiple output-power modes |
JP2002217378A (ja) | 2001-01-19 | 2002-08-02 | Toshiba Corp | 高周波電力増幅器 |
JP4287116B2 (ja) * | 2002-02-27 | 2009-07-01 | シャープ株式会社 | 電力増幅器 |
JP2003264438A (ja) * | 2002-03-08 | 2003-09-19 | Murata Mfg Co Ltd | 高周波電力増幅器 |
JP2003283274A (ja) * | 2002-03-27 | 2003-10-03 | Matsushita Electric Ind Co Ltd | 高周波電力増幅器 |
US6750721B2 (en) * | 2002-04-30 | 2004-06-15 | Freescale Semiconductor, Inc. | HBT linearizer and power booster |
US6686801B1 (en) | 2002-07-23 | 2004-02-03 | Mediatek Inc. | Power amplifier with distributed capacitor |
US6727761B1 (en) * | 2002-09-03 | 2004-04-27 | Triquint Semiconductor, Inc. | Resonant bypassed base ballast circuit |
US6653902B1 (en) | 2002-09-03 | 2003-11-25 | Triquint Semiconductor, Inc. | Amplifier power control circuit |
JP2004194063A (ja) | 2002-12-12 | 2004-07-08 | Renesas Technology Corp | 高周波電力増幅器およびそれを用いた通信装置 |
JP2005295057A (ja) * | 2004-03-31 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 電力増幅器 |
-
2005
- 2005-05-20 JP JP2005148103A patent/JP2006325096A/ja active Pending
-
2006
- 2006-05-18 US US11/435,891 patent/US7449957B2/en not_active Expired - Fee Related
- 2006-05-19 CN CN200610084725A patent/CN100593902C/zh not_active Expired - Fee Related
- 2006-05-19 EP EP06010419A patent/EP1727278B1/en not_active Not-in-force
- 2006-05-19 DE DE602006016892T patent/DE602006016892D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006325096A (ja) | 2006-11-30 |
US20060261897A1 (en) | 2006-11-23 |
EP1727278B1 (en) | 2010-09-15 |
EP1727278A1 (en) | 2006-11-29 |
DE602006016892D1 (de) | 2010-10-28 |
US7449957B2 (en) | 2008-11-11 |
CN1866729A (zh) | 2006-11-22 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KELAIBO INNOVATION CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20141210 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: Osaka Patentee after: Matsushita Electric Industrial Co.,Ltd. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141210 Address after: California, USA Patentee after: Craib Innovations Ltd. Address before: Osaka Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100310 Termination date: 20160519 |
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CF01 | Termination of patent right due to non-payment of annual fee |