CN100590878C - 半导体存储器件及其制造方法 - Google Patents
半导体存储器件及其制造方法 Download PDFInfo
- Publication number
- CN100590878C CN100590878C CN200710079385A CN200710079385A CN100590878C CN 100590878 C CN100590878 C CN 100590878C CN 200710079385 A CN200710079385 A CN 200710079385A CN 200710079385 A CN200710079385 A CN 200710079385A CN 100590878 C CN100590878 C CN 100590878C
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- floating gate
- diffusion layer
- gate electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000003860 storage Methods 0.000 title claims description 34
- 238000007667 floating Methods 0.000 claims abstract description 98
- 238000009792 diffusion process Methods 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 30
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims description 60
- 230000015572 biosynthetic process Effects 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 46
- 238000002955 isolation Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 248
- 239000010408 film Substances 0.000 description 101
- 239000011229 interlayer Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 18
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000012447 hatching Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006096574A JP4675813B2 (ja) | 2006-03-31 | 2006-03-31 | 半導体記憶装置およびその製造方法 |
JP2006096574 | 2006-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101047193A CN101047193A (zh) | 2007-10-03 |
CN100590878C true CN100590878C (zh) | 2010-02-17 |
Family
ID=38557545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710079385A Expired - Fee Related CN100590878C (zh) | 2006-03-31 | 2007-02-16 | 半导体存储器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7714370B2 (zh) |
JP (1) | JP4675813B2 (zh) |
KR (1) | KR101347631B1 (zh) |
CN (1) | CN100590878C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008300575A (ja) * | 2007-05-30 | 2008-12-11 | Oki Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
KR100812080B1 (ko) * | 2007-06-26 | 2008-03-07 | 주식회사 동부하이텍 | 비휘발성 메모리 소자 및 그 제조 방법 |
JP2009070943A (ja) * | 2007-09-12 | 2009-04-02 | Oki Semiconductor Co Ltd | 半導体記憶装置およびその製造方法 |
CN102150268B (zh) * | 2008-09-30 | 2013-07-31 | 株式会社半导体能源研究所 | 半导体存储器件 |
US7999300B2 (en) * | 2009-01-28 | 2011-08-16 | Globalfoundries Singapore Pte. Ltd. | Memory cell structure and method for fabrication thereof |
US8587045B2 (en) * | 2010-08-13 | 2013-11-19 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method of forming the same |
JP6652445B2 (ja) * | 2016-05-11 | 2020-02-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9847348B1 (en) * | 2016-12-20 | 2017-12-19 | Peregrine Semiconductor Corporation | Systems, methods and apparatus for enabling high voltage circuits |
US20200279947A1 (en) * | 2017-11-13 | 2020-09-03 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
CN111584637B (zh) * | 2020-05-28 | 2023-11-14 | 上海华力集成电路制造有限公司 | 一种基于fdsoi的pin结构及其制作方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57111067A (en) * | 1980-12-27 | 1982-07-10 | Seiko Instr & Electronics Ltd | Nonvolatile memory |
JPH04221857A (ja) * | 1990-12-21 | 1992-08-12 | Kawasaki Steel Corp | 不揮発性メモリ |
US5463238A (en) * | 1992-02-25 | 1995-10-31 | Seiko Instruments Inc. | CMOS structure with parasitic channel prevention |
JPH0697109A (ja) * | 1992-09-16 | 1994-04-08 | Fujitsu Ltd | 半導体装置 |
JPH06204487A (ja) * | 1993-01-08 | 1994-07-22 | Toshiba Corp | 半導体記憶装置 |
JPH08255847A (ja) * | 1995-03-15 | 1996-10-01 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US6177803B1 (en) * | 1995-06-07 | 2001-01-23 | Doble Engineering Company | Monitoring elements in a multi-phase alternating current network |
US5886376A (en) * | 1996-07-01 | 1999-03-23 | International Business Machines Corporation | EEPROM having coplanar on-insulator FET and control gate |
JPH1187664A (ja) * | 1997-04-28 | 1999-03-30 | Nippon Steel Corp | 半導体装置及びその製造方法 |
US6501098B2 (en) * | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6590229B1 (en) * | 1999-01-21 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for production thereof |
US6177703B1 (en) | 1999-05-28 | 2001-01-23 | Vlsi Technology, Inc. | Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor |
JP4562835B2 (ja) * | 1999-11-05 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4191355B2 (ja) | 2000-02-10 | 2008-12-03 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP3904512B2 (ja) * | 2002-12-24 | 2007-04-11 | シャープ株式会社 | 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器 |
JP2005011863A (ja) * | 2003-06-17 | 2005-01-13 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2006049413A (ja) * | 2004-08-02 | 2006-02-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US20060170044A1 (en) * | 2005-01-31 | 2006-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | One-transistor random access memory technology integrated with silicon-on-insulator process |
-
2006
- 2006-03-31 JP JP2006096574A patent/JP4675813B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-13 KR KR1020070014790A patent/KR101347631B1/ko not_active IP Right Cessation
- 2007-02-16 CN CN200710079385A patent/CN100590878C/zh not_active Expired - Fee Related
- 2007-03-27 US US11/727,481 patent/US7714370B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101047193A (zh) | 2007-10-03 |
JP4675813B2 (ja) | 2011-04-27 |
KR20070098481A (ko) | 2007-10-05 |
US20070228467A1 (en) | 2007-10-04 |
US7714370B2 (en) | 2010-05-11 |
JP2007273674A (ja) | 2007-10-18 |
KR101347631B1 (ko) | 2014-01-09 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OKI SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: OKI ELECTRIC INDUSTRY CO., LTD. Effective date: 20131113 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20131113 Address after: Kanagawa Patentee after: Lapis Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Oki Electric Industry Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100217 Termination date: 20170216 |
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CF01 | Termination of patent right due to non-payment of annual fee |