CN100568503C - 具有静电放电损坏防护功能的高亮度发光二极管 - Google Patents
具有静电放电损坏防护功能的高亮度发光二极管 Download PDFInfo
- Publication number
- CN100568503C CN100568503C CNB2006100833010A CN200610083301A CN100568503C CN 100568503 C CN100568503 C CN 100568503C CN B2006100833010 A CNB2006100833010 A CN B2006100833010A CN 200610083301 A CN200610083301 A CN 200610083301A CN 100568503 C CN100568503 C CN 100568503C
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- Prior art keywords
- lead frame
- led
- protective function
- electrostatic discharge
- discharge damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000009993 protective function Effects 0.000 title claims abstract description 47
- 230000003068 static effect Effects 0.000 claims abstract description 49
- 230000001012 protector Effects 0.000 claims abstract description 40
- 238000004806 packaging method and process Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000000465 moulding Methods 0.000 claims abstract description 5
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 5
- 239000000057 synthetic resin Substances 0.000 claims abstract description 5
- 230000000087 stabilizing effect Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000006870 function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000012797 qualification Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050046283 | 2005-05-31 | ||
KR1020050046283A KR100650191B1 (ko) | 2005-05-31 | 2005-05-31 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1873975A CN1873975A (zh) | 2006-12-06 |
CN100568503C true CN100568503C (zh) | 2009-12-09 |
Family
ID=37462245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100833010A Active CN100568503C (zh) | 2005-05-31 | 2006-05-31 | 具有静电放电损坏防护功能的高亮度发光二极管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20060267040A1 (zh) |
JP (1) | JP2006339640A (zh) |
KR (1) | KR100650191B1 (zh) |
CN (1) | CN100568503C (zh) |
Families Citing this family (49)
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TWI284433B (en) * | 2006-02-23 | 2007-07-21 | Novalite Optronics Corp | Light emitting diode package and fabricating method thereof |
KR100820529B1 (ko) | 2006-05-11 | 2008-04-08 | 엘지이노텍 주식회사 | 발광 장치 및 그 제조방법, 면 발광 장치 |
KR101134752B1 (ko) * | 2006-07-14 | 2012-04-13 | 엘지이노텍 주식회사 | Led 패키지 |
DE102007001706A1 (de) * | 2007-01-11 | 2008-07-17 | Osram Opto Semiconductors Gmbh | Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse |
US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
US20080290359A1 (en) * | 2007-04-23 | 2008-11-27 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device and manufacturing method of the same |
US20090026470A1 (en) * | 2007-07-23 | 2009-01-29 | Novalite Optronics Corp. | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
KR100870950B1 (ko) * | 2007-11-19 | 2008-12-01 | 일진반도체 주식회사 | 발광다이오드 소자 및 그 제조 방법 |
JP5463447B2 (ja) * | 2008-01-18 | 2014-04-09 | 三洋電機株式会社 | 発光装置及びそれを備えた灯具 |
KR200451054Y1 (ko) | 2008-02-01 | 2010-11-22 | 광전자 주식회사 | 리드 프레임 및 이를 이용한 발광 다이오드 패키지 |
KR200448847Y1 (ko) | 2008-03-20 | 2010-05-27 | 주식회사 파워라이텍 | 측면발광형 발광다이오드 패키지 |
TWI384649B (zh) * | 2008-06-18 | 2013-02-01 | Harvatek Corp | Light emitting diode chip encapsulation structure with embedded electrostatic protection function and its making method |
KR20100003320A (ko) * | 2008-06-24 | 2010-01-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 |
JP5458910B2 (ja) * | 2009-02-24 | 2014-04-02 | 日亜化学工業株式会社 | 発光装置 |
TWI380433B (en) | 2009-02-25 | 2012-12-21 | Everlight Electronics Co Ltd | Light emitting diode package |
CN101819968B (zh) * | 2009-02-27 | 2012-05-23 | 亿光电子工业股份有限公司 | 发光二极管封装 |
KR101060761B1 (ko) | 2009-04-23 | 2011-08-31 | 삼성엘이디 주식회사 | 발광 다이오드 패키지 |
US9196805B2 (en) * | 2010-02-09 | 2015-11-24 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
CN102201395B (zh) * | 2010-03-25 | 2013-05-08 | 方伟光 | 具防突波功能的多层式半导体组件封装结构及其制作方法 |
KR101298406B1 (ko) * | 2010-05-17 | 2013-08-20 | 엘지이노텍 주식회사 | 발광소자 |
JP2012049348A (ja) * | 2010-08-27 | 2012-03-08 | Sharp Corp | 発光装置 |
CN102456826A (zh) * | 2010-11-01 | 2012-05-16 | 富士康(昆山)电脑接插件有限公司 | 发光二极管导线架 |
US20120112237A1 (en) * | 2010-11-05 | 2012-05-10 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Led package structure |
KR101788723B1 (ko) * | 2011-04-28 | 2017-10-20 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101823506B1 (ko) | 2011-06-29 | 2018-01-30 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
KR102042150B1 (ko) * | 2012-09-13 | 2019-11-07 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
DE102013202904A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
WO2015073438A1 (en) * | 2013-11-15 | 2015-05-21 | Reald Inc. | Directional backlights with light emitting element packages |
CN104716246B (zh) * | 2013-12-17 | 2017-09-26 | 展晶科技(深圳)有限公司 | 光电元件封装结构及其制造方法 |
KR102227769B1 (ko) | 2014-11-06 | 2021-03-16 | 삼성전자주식회사 | 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지 |
RU2596062C1 (ru) | 2015-03-20 | 2016-08-27 | Автономная Некоммерческая Образовательная Организация Высшего Профессионального Образования "Сколковский Институт Науки И Технологий" | Способ коррекции изображения глаз с использованием машинного обучения и способ машинного обучения |
EP3123937B1 (en) * | 2015-07-28 | 2019-08-28 | ams AG | Biometric sensor arrangement and method for generating a biometric signal |
US10461233B2 (en) * | 2015-11-27 | 2019-10-29 | Lg Innotek Co., Ltd. | Light emitting device package and lighting device |
EP3400706B1 (en) | 2016-01-05 | 2022-04-13 | RealD Spark, LLC | Gaze correction of multi-view images |
CN105679738B (zh) * | 2016-03-24 | 2019-09-06 | 禾邦电子(中国)有限公司 | 片式整流元件及其生产工艺 |
WO2017200950A1 (en) | 2016-05-19 | 2017-11-23 | Reald Spark, Llc | Wide angle imaging directional backlights |
CN109496258A (zh) | 2016-05-23 | 2019-03-19 | 瑞尔D斯帕克有限责任公司 | 广角成像定向背光源 |
KR101790063B1 (ko) | 2016-05-26 | 2017-10-25 | 주식회사 시지트로닉스 | 하이브리드형 모듈, 집적 소자 및 그 제조 방법 |
CN105938866A (zh) * | 2016-06-13 | 2016-09-14 | 开发晶照明(厦门)有限公司 | Led支架和led封装结构 |
WO2018129059A1 (en) | 2017-01-04 | 2018-07-12 | Reald Spark, Llc | Optical stack for imaging directional backlights |
WO2018187154A1 (en) | 2017-04-03 | 2018-10-11 | Reald Spark, Llc | Segmented imaging directional backlights |
JP6572938B2 (ja) * | 2017-05-12 | 2019-09-11 | 日亜化学工業株式会社 | 発光装置と発光装置の製造方法 |
KR101913508B1 (ko) | 2017-07-21 | 2018-10-30 | 여성열 | 자가 표시기능을 가진 led 선형 조명장치 |
WO2019032604A1 (en) | 2017-08-08 | 2019-02-14 | Reald Spark, Llc | ADJUSTING A DIGITAL REPRESENTATION OF A HEADQUARTERS |
EP3707554B1 (en) | 2017-11-06 | 2023-09-13 | RealD Spark, LLC | Privacy display apparatus |
CN108092133B (zh) * | 2017-12-12 | 2020-01-31 | 湖南艾华集团股份有限公司 | 过电压与突波保护元件 |
KR20200120650A (ko) | 2018-01-25 | 2020-10-21 | 리얼디 스파크, 엘엘씨 | 프라이버시 디스플레이를 위한 터치스크린 |
DE102019104325A1 (de) * | 2019-02-20 | 2020-08-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronische Halbleiterbauteile |
KR102042547B1 (ko) * | 2019-07-04 | 2019-11-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
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JP2966591B2 (ja) * | 1991-08-02 | 1999-10-25 | 三洋電機株式会社 | 光半導体装置 |
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JPH10144965A (ja) * | 1996-11-11 | 1998-05-29 | Hamamatsu Photonics Kk | 光半導体装置及びその製造方法 |
US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
JPH11103097A (ja) * | 1997-07-30 | 1999-04-13 | Rohm Co Ltd | 半導体発光素子 |
US5914501A (en) * | 1998-08-27 | 1999-06-22 | Hewlett-Packard Company | Light emitting diode assembly having integrated electrostatic discharge protection |
JP2000124506A (ja) * | 1998-10-15 | 2000-04-28 | Rohm Co Ltd | 半導体発光素子 |
JP2001036140A (ja) * | 1999-07-16 | 2001-02-09 | Stanley Electric Co Ltd | 静電対策表面実装型led |
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
KR20030033590A (ko) * | 2001-10-24 | 2003-05-01 | (주)옵토니카 | 정전압 소자를 구비한 발광소자 및 그 제조방법 |
TW563264B (en) * | 2002-10-11 | 2003-11-21 | Highlink Technology Corp | Base of optoelectronic device |
JP3789428B2 (ja) | 2002-12-06 | 2006-06-21 | 星和電機株式会社 | 発光装置 |
CN100587560C (zh) * | 2003-04-01 | 2010-02-03 | 夏普株式会社 | 发光装置用组件、发光装置、背侧光照射装置、显示装置 |
-
2005
- 2005-05-31 KR KR1020050046283A patent/KR100650191B1/ko not_active IP Right Cessation
-
2006
- 2006-05-29 JP JP2006147999A patent/JP2006339640A/ja active Pending
- 2006-05-31 CN CNB2006100833010A patent/CN100568503C/zh active Active
- 2006-05-31 US US11/442,957 patent/US20060267040A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20060267040A1 (en) | 2006-11-30 |
JP2006339640A (ja) | 2006-12-14 |
KR100650191B1 (ko) | 2006-11-27 |
CN1873975A (zh) | 2006-12-06 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100826 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20100826 Address after: Gyeonggi Do, South Korea Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121211 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121211 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung LED Co., Ltd. |