JP2011525702A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
- Publication number
- JP2011525702A JP2011525702A JP2011514501A JP2011514501A JP2011525702A JP 2011525702 A JP2011525702 A JP 2011525702A JP 2011514501 A JP2011514501 A JP 2011514501A JP 2011514501 A JP2011514501 A JP 2011514501A JP 2011525702 A JP2011525702 A JP 2011525702A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- electrodes
- overvoltage suppression
- device package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001629 suppression Effects 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 4
- 239000004954 Polyphthalamide Substances 0.000 claims description 4
- 229920010524 Syndiotactic polystyrene Polymers 0.000 claims description 4
- 229920006375 polyphtalamide Polymers 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000002457 bidirectional effect Effects 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
110 パッケージボディ
112 上部
114 側面
115 キャビティ
120 発光素子
125 ワイヤ
131 第1電極
132 第2電極
135 樹脂物質
140 過電圧抑制ダイオード
145 連結部材
150 印刷回路基板
160 光ガイドプレート
170 反射板
200 面光源装置
Claims (15)
- 複数の電極を備えたパッケージボディと、
前記複数の電極に電気的に連結された発光素子と、
前記複数の電極に電気的に連結された過電圧抑制ダイオードと、を含む発光素子パッケージ。 - 前記複数の電極は前記パッケージボディの上に形成されたリードフレームを含む請求項1に記載の発光素子パッケージ。
- 前記過電圧抑制ダイオードは前記パッケージボディ内に配置される請求項1に記載の発光素子パッケージ。
- 前記過電圧抑制ダイオードは前記複数の電極の下にフリップボンディングされる請求項3に記載の発光素子パッケージ。
- 前記発光素子と前記過電圧抑制ダイオードは逆並列に連結される請求項1に記載の発光素子パッケージ。
- 前記過電圧抑制ダイオードは前記複数の電極にはんだボール、Agペースト、及び伝導性接着剤中のいずれか1つにより搭載される請求項4に記載の発光素子パッケージ。
- 前記パッケージボディはポリフタルアミド(PPA)、液晶ポリマー(LCP)、シンジオタクチックポリスチレン(SPS)、シリコンウェハ中のいずれか1つの材質を含む請求項1に記載の発光素子パッケージ。
- 前記過電圧抑制ダイオードは単方向アバランシェダイオードまたは双方向アバランシェダイオードを含む請求項1に記載の発光素子パッケージ。
- 前記発光素子は少なくとも1つの有色LEDチップまたはUV-LEDチップを含む請求項1に記載の発光素子パッケージ。
- 前記発光素子は複数のLEDチップを含み、前記複数のLEDチップは相互に直列または並列に連結される請求項1に記載の発光素子パッケージ。
- 複数の過電圧抑制ダイオードは相互に直列に連結されたそれぞれのLEDチップに並列に連結される請求項10に記載の発光素子パッケージ。
- キャビティを有するパッケージボディと、
前記キャビティに配置された複数の電極と、
前記複数の電極に電気的に連結された発光素子と、
前記パッケージボディ内において前記複数の電極に電気的に連結された過電圧抑制ダイオードと、を含む発光素子パッケージ。 - 前記過電圧抑制ダイオードは前記複数の電極の下にフリップボンディングされる請求項12に記載の発光素子パッケージ。
- 前記キャビティに形成された透光性樹脂または蛍光体が添加された樹脂を含む請求項12に記載の発光素子パッケージ。
- 前記発光素子は少なくとも1つのLEDチップを含み、前記複数の電極に少なくとも1つのワイヤまたはフリップ方式によりボンディングされる請求項15に記載の発光素子パッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080059517A KR20100003320A (ko) | 2008-06-24 | 2008-06-24 | 발광 다이오드 패키지 |
KR10-2008-0059517 | 2008-06-24 | ||
PCT/KR2009/003363 WO2009157689A2 (ko) | 2008-06-24 | 2009-06-23 | 발광 소자 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011525702A true JP2011525702A (ja) | 2011-09-22 |
Family
ID=41445091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011514501A Pending JP2011525702A (ja) | 2008-06-24 | 2009-06-23 | 発光素子パッケージ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110012144A1 (ja) |
EP (1) | EP2246911A4 (ja) |
JP (1) | JP2011525702A (ja) |
KR (1) | KR20100003320A (ja) |
CN (1) | CN101981693A (ja) |
WO (1) | WO2009157689A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013084437A1 (ja) * | 2011-12-09 | 2013-06-13 | 日本特殊陶業株式会社 | 発光素子搭載用配線基板 |
KR101443121B1 (ko) * | 2013-02-26 | 2014-09-26 | 주식회사 루멘스 | 발광소자 패키지 및 그 제조방법 |
WO2016035426A1 (ja) * | 2014-09-05 | 2016-03-10 | シャープ株式会社 | 発光装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5748496B2 (ja) | 2011-02-10 | 2015-07-15 | ローム株式会社 | Ledモジュール |
WO2012168834A1 (en) * | 2011-06-08 | 2012-12-13 | Koninklijke Philips Electronics N.V. | Diode lighting arrangement |
KR20130098048A (ko) * | 2012-02-27 | 2013-09-04 | 엘지이노텍 주식회사 | 발광소자 패키지 |
DE102014008614B4 (de) * | 2014-06-07 | 2022-03-24 | Diehl Aerospace Gmbh | LED-Beleuchtungsvorrichtung für eine Wechselspannungsversorgung in einem Flugzeug sowie Flugzeug mit der LED-Beleuchtungsvorrichtung |
KR102445531B1 (ko) * | 2015-10-21 | 2022-09-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1154804A (ja) * | 1997-07-30 | 1999-02-26 | Rohm Co Ltd | チップ型発光素子 |
JP2000012910A (ja) * | 1998-06-19 | 2000-01-14 | Matsushita Electron Corp | 半導体発光装置及びこれを備えた表示装置構造 |
JP2000124506A (ja) * | 1998-10-15 | 2000-04-28 | Rohm Co Ltd | 半導体発光素子 |
JP2001036140A (ja) * | 1999-07-16 | 2001-02-09 | Stanley Electric Co Ltd | 静電対策表面実装型led |
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2006339640A (ja) * | 2005-05-31 | 2006-12-14 | Samsung Electro Mech Co Ltd | 静電気放電衝撃に対する保護機能が内蔵された高輝度発光ダイオード |
JP2007227882A (ja) * | 2006-02-23 | 2007-09-06 | Novalite Optronics Corp | 発光ダイオードパッケージとその製造方法 |
JP2007294953A (ja) * | 2006-04-20 | 2007-11-08 | Alti Electronics Co Ltd | 高効率発光ダイオードパッケージ |
JP2007311736A (ja) * | 2006-04-21 | 2007-11-29 | Nichia Chem Ind Ltd | 発光装置 |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JP2008071954A (ja) * | 2006-09-14 | 2008-03-27 | Mimaki Denshi Buhin Kk | 光源装置 |
JP2009253169A (ja) * | 2008-04-09 | 2009-10-29 | Nichia Corp | 発光装置 |
Family Cites Families (10)
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US6448110B1 (en) * | 1999-08-25 | 2002-09-10 | Vanguard International Semiconductor Corporation | Method for fabricating a dual-chip package and package formed |
KR100670532B1 (ko) * | 2005-01-28 | 2007-01-16 | 엘지이노텍 주식회사 | Led 패키지 |
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-
2008
- 2008-06-24 KR KR1020080059517A patent/KR20100003320A/ko not_active Application Discontinuation
-
2009
- 2009-06-23 EP EP09770361.5A patent/EP2246911A4/en not_active Withdrawn
- 2009-06-23 CN CN2009801107709A patent/CN101981693A/zh active Pending
- 2009-06-23 WO PCT/KR2009/003363 patent/WO2009157689A2/ko active Application Filing
- 2009-06-23 JP JP2011514501A patent/JP2011525702A/ja active Pending
- 2009-06-23 US US12/922,619 patent/US20110012144A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH1154804A (ja) * | 1997-07-30 | 1999-02-26 | Rohm Co Ltd | チップ型発光素子 |
JP2000012910A (ja) * | 1998-06-19 | 2000-01-14 | Matsushita Electron Corp | 半導体発光装置及びこれを備えた表示装置構造 |
JP2000124506A (ja) * | 1998-10-15 | 2000-04-28 | Rohm Co Ltd | 半導体発光素子 |
JP2001036140A (ja) * | 1999-07-16 | 2001-02-09 | Stanley Electric Co Ltd | 静電対策表面実装型led |
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2006339640A (ja) * | 2005-05-31 | 2006-12-14 | Samsung Electro Mech Co Ltd | 静電気放電衝撃に対する保護機能が内蔵された高輝度発光ダイオード |
JP2007227882A (ja) * | 2006-02-23 | 2007-09-06 | Novalite Optronics Corp | 発光ダイオードパッケージとその製造方法 |
JP2007294953A (ja) * | 2006-04-20 | 2007-11-08 | Alti Electronics Co Ltd | 高効率発光ダイオードパッケージ |
JP2007311736A (ja) * | 2006-04-21 | 2007-11-29 | Nichia Chem Ind Ltd | 発光装置 |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
JP2008071954A (ja) * | 2006-09-14 | 2008-03-27 | Mimaki Denshi Buhin Kk | 光源装置 |
JP2009253169A (ja) * | 2008-04-09 | 2009-10-29 | Nichia Corp | 発光装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013084437A1 (ja) * | 2011-12-09 | 2013-06-13 | 日本特殊陶業株式会社 | 発光素子搭載用配線基板 |
JP2013122951A (ja) * | 2011-12-09 | 2013-06-20 | Ngk Spark Plug Co Ltd | 発光素子搭載用配線基板 |
KR101443121B1 (ko) * | 2013-02-26 | 2014-09-26 | 주식회사 루멘스 | 발광소자 패키지 및 그 제조방법 |
WO2016035426A1 (ja) * | 2014-09-05 | 2016-03-10 | シャープ株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101981693A (zh) | 2011-02-23 |
EP2246911A4 (en) | 2013-10-02 |
KR20100003320A (ko) | 2010-01-08 |
WO2009157689A3 (ko) | 2010-03-25 |
WO2009157689A2 (ko) | 2009-12-30 |
US20110012144A1 (en) | 2011-01-20 |
EP2246911A2 (en) | 2010-11-03 |
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