CN100568395C - 非易失性存储器和通过附加修改的空存储单元加速测试地址解码器的方法 - Google Patents
非易失性存储器和通过附加修改的空存储单元加速测试地址解码器的方法 Download PDFInfo
- Publication number
- CN100568395C CN100568395C CNB028129318A CN02812931A CN100568395C CN 100568395 C CN100568395 C CN 100568395C CN B028129318 A CNB028129318 A CN B028129318A CN 02812931 A CN02812931 A CN 02812931A CN 100568395 C CN100568395 C CN 100568395C
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- China
- Prior art keywords
- demoder
- storage unit
- nonvolatile memory
- test
- relevant
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015654 memory Effects 0.000 title claims abstract description 67
- 238000012360 testing method Methods 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000003860 storage Methods 0.000 title claims description 28
- 238000012986 modification Methods 0.000 title description 5
- 230000004048 modification Effects 0.000 title description 5
- 238000007689 inspection Methods 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims description 14
- 238000007667 floating Methods 0.000 claims description 4
- 238000010998 test method Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 230000006870 function Effects 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000013519 translation Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01115963.9 | 2001-06-29 | ||
EP01115963 | 2001-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1520597A CN1520597A (zh) | 2004-08-11 |
CN100568395C true CN100568395C (zh) | 2009-12-09 |
Family
ID=8177907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028129318A Expired - Fee Related CN100568395C (zh) | 2001-06-29 | 2002-06-28 | 非易失性存储器和通过附加修改的空存储单元加速测试地址解码器的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7664998B2 (zh) |
EP (1) | EP1405316B1 (zh) |
JP (1) | JP2004531020A (zh) |
KR (1) | KR100901963B1 (zh) |
CN (1) | CN100568395C (zh) |
AT (1) | ATE449412T1 (zh) |
DE (1) | DE60234446D1 (zh) |
WO (1) | WO2003003379A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2878644A1 (fr) | 2004-11-30 | 2006-06-02 | St Microelectronics Sa | Test d'un decodeur d'adresses de memoire non volatile |
JPWO2006129780A1 (ja) * | 2005-05-30 | 2009-01-08 | セイコーエプソン株式会社 | シーケンシャル書込においてベリファイ処理を行う不揮発性メモリ |
US8526254B2 (en) * | 2008-04-03 | 2013-09-03 | Sidense Corp. | Test cells for an unprogrammed OTP memory array |
IT1397374B1 (it) * | 2009-12-30 | 2013-01-10 | St Microelectronics Srl | Soluzione integrata per l'individuazione dei componenti difettosi in dispositivi di memoria |
CN103093832A (zh) * | 2013-02-26 | 2013-05-08 | 上海宏力半导体制造有限公司 | 嵌入式闪存的失效测试方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5693189A (en) * | 1979-12-18 | 1981-07-28 | Fujitsu Ltd | Field programable element |
JPS63152100A (ja) | 1986-12-15 | 1988-06-24 | Nec Corp | 半導体記憶装置 |
JPH03241598A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | シグネチャー回路 |
JPH04106795A (ja) * | 1990-08-28 | 1992-04-08 | Nec Corp | 半導体記憶装置 |
JP3223524B2 (ja) | 1991-06-20 | 2001-10-29 | 富士通株式会社 | 半導体記憶装置 |
JPH0563162A (ja) * | 1991-08-30 | 1993-03-12 | Sharp Corp | 半導体記憶装置 |
JPH05189988A (ja) * | 1992-01-10 | 1993-07-30 | Sharp Corp | 半導体記憶装置 |
JP2834364B2 (ja) * | 1992-03-31 | 1998-12-09 | シャープ株式会社 | 半導体記憶装置 |
US5357471A (en) * | 1992-03-20 | 1994-10-18 | National Semiconductor Corporation | Fault locator architecture and method for memories |
DE4223532A1 (de) * | 1992-07-17 | 1994-01-20 | Philips Patentverwaltung | Schaltungsanordnung zum Prüfen der Adressierung wenigstens einer Matrix |
DE4317175A1 (de) * | 1993-05-22 | 1994-11-24 | Bosch Gmbh Robert | Selbsttesteinrichtung für Speicheranordnungen, Decoder od. dgl. |
US5606193A (en) * | 1994-10-03 | 1997-02-25 | Sharp Kabushiki Kaisha | DRAM and MROM cells with similar structure |
SG74580A1 (en) * | 1996-03-08 | 2000-08-22 | Hitachi Ltd | Semiconductor ic device having a memory and a logic circuit implemented with a single chip |
JPH10320989A (ja) * | 1997-05-16 | 1998-12-04 | Toshiba Microelectron Corp | 不揮発性半導体メモリ |
US6950336B2 (en) * | 2000-05-03 | 2005-09-27 | Emosyn America, Inc. | Method and apparatus for emulating an electrically erasable programmable read only memory (EEPROM) using non-volatile floating gate memory cells |
-
2002
- 2002-06-28 CN CNB028129318A patent/CN100568395C/zh not_active Expired - Fee Related
- 2002-06-28 KR KR1020037002796A patent/KR100901963B1/ko not_active IP Right Cessation
- 2002-06-28 WO PCT/IB2002/002489 patent/WO2003003379A1/en active Application Filing
- 2002-06-28 AT AT02741000T patent/ATE449412T1/de not_active IP Right Cessation
- 2002-06-28 DE DE60234446T patent/DE60234446D1/de not_active Expired - Lifetime
- 2002-06-28 JP JP2003509464A patent/JP2004531020A/ja active Pending
- 2002-06-28 US US10/481,976 patent/US7664998B2/en not_active Expired - Fee Related
- 2002-06-28 EP EP02741000A patent/EP1405316B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1405316A1 (en) | 2004-04-07 |
DE60234446D1 (de) | 2009-12-31 |
CN1520597A (zh) | 2004-08-11 |
WO2003003379A1 (en) | 2003-01-09 |
EP1405316B1 (en) | 2009-11-18 |
JP2004531020A (ja) | 2004-10-07 |
US20040188716A1 (en) | 2004-09-30 |
US7664998B2 (en) | 2010-02-16 |
KR20040014948A (ko) | 2004-02-18 |
ATE449412T1 (de) | 2009-12-15 |
KR100901963B1 (ko) | 2009-06-10 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20071102 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071102 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklike Philips Electronics N. V. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091209 Termination date: 20150628 |
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EXPY | Termination of patent right or utility model |