CN100550315C - 灰化方法与灰化装置 - Google Patents

灰化方法与灰化装置 Download PDF

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Publication number
CN100550315C
CN100550315C CNB2004800442247A CN200480044224A CN100550315C CN 100550315 C CN100550315 C CN 100550315C CN B2004800442247 A CNB2004800442247 A CN B2004800442247A CN 200480044224 A CN200480044224 A CN 200480044224A CN 100550315 C CN100550315 C CN 100550315C
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CN
China
Prior art keywords
plasma
gas
ashing
added
inert gas
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Expired - Lifetime
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CNB2004800442247A
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English (en)
Chinese (zh)
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CN101065833A (zh
Inventor
山崎克弘
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Shibaura Mechatronics Corp
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Shibaura Engineering Works Co Ltd
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Publication of CN101065833A publication Critical patent/CN101065833A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2004800442247A 2004-09-01 2004-12-14 灰化方法与灰化装置 Expired - Lifetime CN100550315C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP254248/2004 2004-09-01
JP2004254248A JP4588391B2 (ja) 2004-09-01 2004-09-01 アッシング方法及びアッシング装置

Publications (2)

Publication Number Publication Date
CN101065833A CN101065833A (zh) 2007-10-31
CN100550315C true CN100550315C (zh) 2009-10-14

Family

ID=35999787

Family Applications (1)

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CNB2004800442247A Expired - Lifetime CN100550315C (zh) 2004-09-01 2004-12-14 灰化方法与灰化装置

Country Status (7)

Country Link
US (2) US20080132078A1 (https=)
EP (1) EP1796153B1 (https=)
JP (1) JP4588391B2 (https=)
KR (1) KR101156883B1 (https=)
CN (1) CN100550315C (https=)
TW (1) TW200610052A (https=)
WO (1) WO2006025123A1 (https=)

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TWI665731B (zh) * 2015-08-17 2019-07-11 Ulvac, Inc. 基板處理方法及基板處理裝置

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US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
JP2008065944A (ja) * 2006-09-08 2008-03-21 Ulvac Japan Ltd 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
US7942112B2 (en) * 2006-12-04 2011-05-17 Advanced Energy Industries, Inc. Method and apparatus for preventing the formation of a plasma-inhibiting substance
JP5019913B2 (ja) * 2007-03-06 2012-09-05 シャープ株式会社 窒化物半導体素子の製造方法
US7807579B2 (en) * 2007-04-19 2010-10-05 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
JP2009016453A (ja) * 2007-07-02 2009-01-22 Tokyo Electron Ltd プラズマ処理装置
JP4971930B2 (ja) 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
JP2009170547A (ja) 2008-01-11 2009-07-30 Tokyo Electron Ltd 基板処理方法，基板処理装置，記録媒体
JP2011096300A (ja) * 2009-10-27 2011-05-12 Ulvac Japan Ltd 磁気記録メディアの製造方法
JP5476161B2 (ja) * 2010-03-02 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6579953B2 (ja) 2012-07-16 2019-09-25 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法
JP6146807B2 (ja) * 2013-05-30 2017-06-14 学校法人文理学園 プラズマ処理装置及びプラズマ処理方法
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP7016537B2 (ja) * 2017-01-31 2022-02-07 国立大学法人東北大学 プラズマ発生装置、プラズマスパッタリング装置及びプラズマスパッタリング方法
JP6902941B2 (ja) 2017-06-29 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
US10872761B2 (en) 2018-06-25 2020-12-22 Mattson Technology Inc. Post etch defluorination process
KR102720152B1 (ko) * 2018-09-14 2024-10-22 삼성전자주식회사 극자외선 광원 시스템에서 콜렉터의 실시간 세정 방법
US10535524B1 (en) 2019-03-11 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment

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CN1264163A (zh) * 1999-02-14 2000-08-23 中国科学院半导体研究所 磷化铟表面清洁方法
CN1890785A (zh) * 2003-12-04 2007-01-03 东京毅力科创株式会社 半导体基板导电层表面的净化方法

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JPH06349786A (ja) * 1993-06-04 1994-12-22 Fujitsu Ltd 半導体装置の製造方法
JPH10209118A (ja) * 1997-01-28 1998-08-07 Sony Corp アッシング方法
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JP2002261092A (ja) 2001-02-27 2002-09-13 Nec Corp 半導体装置の製造方法
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JP2004087744A (ja) * 2002-08-27 2004-03-18 Hitachi Ltd 半導体装置の製造方法
JP2004128252A (ja) * 2002-10-03 2004-04-22 Ulvac Japan Ltd 多孔質絶縁膜のプラズマ処理方法
JP2004214336A (ja) * 2002-12-27 2004-07-29 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
WO2004107825A1 (ja) * 2003-05-30 2004-12-09 Tokyo Electron Limited プラズマ源及びプラズマ処理装置
JP2005032750A (ja) * 2003-07-07 2005-02-03 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
JP4558296B2 (ja) * 2003-09-25 2010-10-06 東京エレクトロン株式会社 プラズマアッシング方法

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Publication number Priority date Publication date Assignee Title
CN1264163A (zh) * 1999-02-14 2000-08-23 中国科学院半导体研究所 磷化铟表面清洁方法
CN1890785A (zh) * 2003-12-04 2007-01-03 东京毅力科创株式会社 半导体基板导电层表面的净化方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI665731B (zh) * 2015-08-17 2019-07-11 Ulvac, Inc. 基板處理方法及基板處理裝置

Also Published As

Publication number Publication date
CN101065833A (zh) 2007-10-31
WO2006025123A1 (ja) 2006-03-09
TW200610052A (en) 2006-03-16
EP1796153A1 (en) 2007-06-13
KR101156883B1 (ko) 2012-06-20
US20110143546A1 (en) 2011-06-16
EP1796153B1 (en) 2013-06-26
KR20070057224A (ko) 2007-06-04
JP2006073722A (ja) 2006-03-16
TWI369735B (https=) 2012-08-01
JP4588391B2 (ja) 2010-12-01
EP1796153A4 (en) 2008-11-05
US8524102B2 (en) 2013-09-03
US20080132078A1 (en) 2008-06-05

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