TW200610052A - Ashing method and ashing device - Google Patents

Ashing method and ashing device

Info

Publication number
TW200610052A
TW200610052A TW093139188A TW93139188A TW200610052A TW 200610052 A TW200610052 A TW 200610052A TW 093139188 A TW093139188 A TW 093139188A TW 93139188 A TW93139188 A TW 93139188A TW 200610052 A TW200610052 A TW 200610052A
Authority
TW
Taiwan
Prior art keywords
gas
ashing
plasma
film
wafer
Prior art date
Application number
TW093139188A
Other languages
English (en)
Chinese (zh)
Other versions
TWI369735B (https=
Inventor
Katsuhiro Yamazaki
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of TW200610052A publication Critical patent/TW200610052A/zh
Application granted granted Critical
Publication of TWI369735B publication Critical patent/TWI369735B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093139188A 2004-09-01 2004-12-16 Ashing method and ashing device TW200610052A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004254248A JP4588391B2 (ja) 2004-09-01 2004-09-01 アッシング方法及びアッシング装置

Publications (2)

Publication Number Publication Date
TW200610052A true TW200610052A (en) 2006-03-16
TWI369735B TWI369735B (https=) 2012-08-01

Family

ID=35999787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093139188A TW200610052A (en) 2004-09-01 2004-12-16 Ashing method and ashing device

Country Status (7)

Country Link
US (2) US20080132078A1 (https=)
EP (1) EP1796153B1 (https=)
JP (1) JP4588391B2 (https=)
KR (1) KR101156883B1 (https=)
CN (1) CN100550315C (https=)
TW (1) TW200610052A (https=)
WO (1) WO2006025123A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727676B (zh) * 2019-03-11 2021-05-11 台灣積體電路製造股份有限公司 半導體元件的製造方法

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US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
JP2008065944A (ja) * 2006-09-08 2008-03-21 Ulvac Japan Ltd 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
US7942112B2 (en) * 2006-12-04 2011-05-17 Advanced Energy Industries, Inc. Method and apparatus for preventing the formation of a plasma-inhibiting substance
JP5019913B2 (ja) * 2007-03-06 2012-09-05 シャープ株式会社 窒化物半導体素子の製造方法
US7807579B2 (en) * 2007-04-19 2010-10-05 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
JP2009016453A (ja) * 2007-07-02 2009-01-22 Tokyo Electron Ltd プラズマ処理装置
JP4971930B2 (ja) 2007-09-28 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
JP2009170547A (ja) 2008-01-11 2009-07-30 Tokyo Electron Ltd 基板処理方法，基板処理装置，記録媒体
JP2011096300A (ja) * 2009-10-27 2011-05-12 Ulvac Japan Ltd 磁気記録メディアの製造方法
JP5476161B2 (ja) * 2010-03-02 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6579953B2 (ja) 2012-07-16 2019-09-25 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 純還元性プラズマ中で高アスペクト比のフォトレジストを除去する方法
JP6146807B2 (ja) * 2013-05-30 2017-06-14 学校法人文理学園 プラズマ処理装置及びプラズマ処理方法
CN107924833B (zh) * 2015-08-17 2021-11-09 株式会社爱发科 基板处理方法及基板处理装置
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP7016537B2 (ja) * 2017-01-31 2022-02-07 国立大学法人東北大学 プラズマ発生装置、プラズマスパッタリング装置及びプラズマスパッタリング方法
JP6902941B2 (ja) 2017-06-29 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
US10872761B2 (en) 2018-06-25 2020-12-22 Mattson Technology Inc. Post etch defluorination process
KR102720152B1 (ko) * 2018-09-14 2024-10-22 삼성전자주식회사 극자외선 광원 시스템에서 콜렉터의 실시간 세정 방법

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US4836902A (en) * 1987-10-09 1989-06-06 Northern Telecom Limited Method and apparatus for removing coating from substrate
US4961820A (en) * 1988-06-09 1990-10-09 Fujitsu Limited Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
JPH06349786A (ja) * 1993-06-04 1994-12-22 Fujitsu Ltd 半導体装置の製造方法
JPH10209118A (ja) * 1997-01-28 1998-08-07 Sony Corp アッシング方法
US5968275A (en) * 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US6551939B2 (en) * 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
CN1124643C (zh) * 1999-02-14 2003-10-15 中国科学院半导体研究所 磷化铟表面清洁方法
US6263830B1 (en) * 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
WO2001029879A2 (en) * 1999-10-20 2001-04-26 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US20010024769A1 (en) * 2000-02-08 2001-09-27 Kevin Donoghue Method for removing photoresist and residues from semiconductor device surfaces
JP2002261092A (ja) 2001-02-27 2002-09-13 Nec Corp 半導体装置の製造方法
US6630406B2 (en) * 2001-05-14 2003-10-07 Axcelis Technologies Plasma ashing process
JP2003092287A (ja) * 2001-09-19 2003-03-28 Nec Corp アッシング方法
JP4177993B2 (ja) * 2002-04-18 2008-11-05 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP2004087744A (ja) * 2002-08-27 2004-03-18 Hitachi Ltd 半導体装置の製造方法
JP2004128252A (ja) * 2002-10-03 2004-04-22 Ulvac Japan Ltd 多孔質絶縁膜のプラズマ処理方法
JP2004214336A (ja) * 2002-12-27 2004-07-29 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
WO2004107825A1 (ja) * 2003-05-30 2004-12-09 Tokyo Electron Limited プラズマ源及びプラズマ処理装置
JP2005032750A (ja) * 2003-07-07 2005-02-03 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
JP4558296B2 (ja) * 2003-09-25 2010-10-06 東京エレクトロン株式会社 プラズマアッシング方法
EP1691403A4 (en) * 2003-12-04 2009-04-15 Tokyo Electron Ltd METHOD FOR CLEANING THE CONDUCTIVE COATING SURFACE OF A SEMICONDUCTOR SUBSTRATE

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727676B (zh) * 2019-03-11 2021-05-11 台灣積體電路製造股份有限公司 半導體元件的製造方法
US11239083B2 (en) 2019-03-11 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment
US11688606B2 (en) 2019-03-11 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment
US12148620B2 (en) 2019-03-11 2024-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage through meta stable plasma treatment

Also Published As

Publication number Publication date
CN101065833A (zh) 2007-10-31
WO2006025123A1 (ja) 2006-03-09
EP1796153A1 (en) 2007-06-13
KR101156883B1 (ko) 2012-06-20
US20110143546A1 (en) 2011-06-16
EP1796153B1 (en) 2013-06-26
KR20070057224A (ko) 2007-06-04
JP2006073722A (ja) 2006-03-16
CN100550315C (zh) 2009-10-14
TWI369735B (https=) 2012-08-01
JP4588391B2 (ja) 2010-12-01
EP1796153A4 (en) 2008-11-05
US8524102B2 (en) 2013-09-03
US20080132078A1 (en) 2008-06-05

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