JP2006507667A5 - - Google Patents
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- Publication number
- JP2006507667A5 JP2006507667A5 JP2004537941A JP2004537941A JP2006507667A5 JP 2006507667 A5 JP2006507667 A5 JP 2006507667A5 JP 2004537941 A JP2004537941 A JP 2004537941A JP 2004537941 A JP2004537941 A JP 2004537941A JP 2006507667 A5 JP2006507667 A5 JP 2006507667A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- remove
- crust
- residue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims 90
- 229920002120 photoresistant polymer Polymers 0.000 claims 45
- 239000007789 gas Substances 0.000 claims 31
- 239000000463 material Substances 0.000 claims 31
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 23
- 229910001882 dioxygen Inorganic materials 0.000 claims 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 21
- 239000010909 process residue Substances 0.000 claims 16
- 239000004215 Carbon black (E152) Substances 0.000 claims 14
- 229930195733 hydrocarbon Natural products 0.000 claims 14
- 150000002430 hydrocarbons Chemical class 0.000 claims 14
- 239000001257 hydrogen Substances 0.000 claims 11
- 229910052739 hydrogen Inorganic materials 0.000 claims 11
- 229910052736 halogen Inorganic materials 0.000 claims 10
- 150000002367 halogens Chemical class 0.000 claims 10
- 239000000203 mixture Substances 0.000 claims 9
- 238000002513 implantation Methods 0.000 claims 7
- 238000005468 ion implantation Methods 0.000 claims 7
- 230000001939 inductive effect Effects 0.000 claims 6
- 230000006698 induction Effects 0.000 claims 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41206702P | 2002-09-18 | 2002-09-18 | |
| PCT/US2003/029275 WO2004027826A2 (en) | 2002-09-18 | 2003-09-16 | System and method for removing material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006507667A JP2006507667A (ja) | 2006-03-02 |
| JP2006507667A5 true JP2006507667A5 (https=) | 2006-11-02 |
Family
ID=32030795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004537941A Withdrawn JP2006507667A (ja) | 2002-09-18 | 2003-09-16 | 材料を除去するためのシステムおよび方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20040084150A1 (https=) |
| JP (1) | JP2006507667A (https=) |
| KR (1) | KR20050044806A (https=) |
| CN (1) | CN1682353A (https=) |
| AU (1) | AU2003270735A1 (https=) |
| DE (1) | DE10393277T5 (https=) |
| TW (1) | TW200414279A (https=) |
| WO (1) | WO2004027826A2 (https=) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7083903B2 (en) * | 2003-06-17 | 2006-08-01 | Lam Research Corporation | Methods of etching photoresist on substrates |
| US20060051965A1 (en) * | 2004-09-07 | 2006-03-09 | Lam Research Corporation | Methods of etching photoresist on substrates |
| JP2006222156A (ja) | 2005-02-08 | 2006-08-24 | Toshiba Corp | 有機膜加工方法 |
| US7605063B2 (en) | 2006-05-10 | 2009-10-20 | Lam Research Corporation | Photoresist stripping chamber and methods of etching photoresist on substrates |
| US20080009127A1 (en) * | 2006-07-04 | 2008-01-10 | Hynix Semiconductor Inc. | Method of removing photoresist |
| KR100780660B1 (ko) * | 2006-07-04 | 2007-11-30 | 주식회사 하이닉스반도체 | 높은 도즈의 이온주입배리어로 사용된 감광막의 스트립방법 |
| US20080102644A1 (en) * | 2006-10-31 | 2008-05-01 | Novellus Systems, Inc. | Methods for removing photoresist from a semiconductor substrate |
| US8093157B2 (en) * | 2007-07-03 | 2012-01-10 | Mattson Technology, Inc. | Advanced processing technique and system for preserving tungsten in a device structure |
| US7723240B2 (en) * | 2008-05-15 | 2010-05-25 | Macronix International Co., Ltd. | Methods of low temperature oxidation |
| US20120227762A1 (en) * | 2009-10-14 | 2012-09-13 | American Air Liquide, Inc. | Plasma ashing compounds and methods of use |
| JP5558200B2 (ja) * | 2010-05-13 | 2014-07-23 | シャープ株式会社 | プラズマアッシング方法及びプラズマアッシング装置 |
| CN103180932A (zh) * | 2010-10-27 | 2013-06-26 | 应用材料公司 | 用于控制光刻胶线宽粗糙度的方法及设备 |
| US9805912B2 (en) * | 2010-11-17 | 2017-10-31 | Axcelis Technologies, Inc. | Hydrogen COGas for carbon implant |
| US20130288469A1 (en) * | 2012-04-27 | 2013-10-31 | Applied Materials, Inc. | Methods and apparatus for implanting a dopant material |
| US10256079B2 (en) * | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
| US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
| US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
| US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
| US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
| US9117881B2 (en) | 2013-03-15 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line system and process |
| US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
| CN104576309B (zh) * | 2013-10-11 | 2018-02-27 | 中芯国际集成电路制造(上海)有限公司 | 从多芯片封装结构中获取底层芯片的方法 |
| US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
| US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
| US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
| US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
| US20150357203A1 (en) * | 2014-06-05 | 2015-12-10 | Macronix International Co., Ltd. | Patterning method and patterning apparatus |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| WO2018052494A1 (en) | 2016-09-14 | 2018-03-22 | Mattson Technology, Inc. | Strip process for high aspect ratio structure |
| US10403492B1 (en) * | 2018-12-11 | 2019-09-03 | Mattson Technology, Inc. | Integration of materials removal and surface treatment in semiconductor device fabrication |
| CN109698126A (zh) * | 2018-12-24 | 2019-04-30 | 上海华力集成电路制造有限公司 | 改善硅针孔缺陷的方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770524B2 (ja) * | 1987-08-19 | 1995-07-31 | 富士通株式会社 | 半導体装置の製造方法 |
| JPH0626201B2 (ja) * | 1987-10-15 | 1994-04-06 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2541851B2 (ja) * | 1989-03-10 | 1996-10-09 | 富士通株式会社 | 有機物の剥離方法 |
| EP0416774B1 (en) * | 1989-08-28 | 2000-11-15 | Hitachi, Ltd. | A method of treating a sample of aluminium-containing material |
| WO1991010341A1 (en) * | 1990-01-04 | 1991-07-11 | Savas Stephen E | A low frequency inductive rf plasma reactor |
| EP0463870B1 (en) * | 1990-06-26 | 1999-02-24 | Fujitsu Limited | Method of plasma treating a resist using hydrogen gas |
| JP3391410B2 (ja) * | 1993-09-17 | 2003-03-31 | 富士通株式会社 | レジストマスクの除去方法 |
| JPH08306668A (ja) * | 1995-05-09 | 1996-11-22 | Sony Corp | アッシング方法 |
| US6379576B2 (en) * | 1997-11-17 | 2002-04-30 | Mattson Technology, Inc. | Systems and methods for variable mode plasma enhanced processing of semiconductor wafers |
| US6251771B1 (en) * | 1998-02-23 | 2001-06-26 | Texas Instruments Incorporated | Hydrogen passivation of chemical-mechanically polished copper-containing layers |
| EP0940846A1 (en) * | 1998-03-06 | 1999-09-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for stripping ion implanted photoresist layer |
| US6277733B1 (en) * | 1998-10-05 | 2001-08-21 | Texas Instruments Incorporated | Oxygen-free, dry plasma process for polymer removal |
| US6342446B1 (en) * | 1998-10-06 | 2002-01-29 | Texas Instruments Incorporated | Plasma process for organic residue removal from copper |
| US6805139B1 (en) * | 1999-10-20 | 2004-10-19 | Mattson Technology, Inc. | Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing |
| US6265320B1 (en) * | 1999-12-21 | 2001-07-24 | Novellus Systems, Inc. | Method of minimizing reactive ion etch damage of organic insulating layers in semiconductor fabrication |
| US6426304B1 (en) * | 2000-06-30 | 2002-07-30 | Lam Research Corporation | Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications |
| US6524936B2 (en) * | 2000-12-22 | 2003-02-25 | Axcelis Technologies, Inc. | Process for removal of photoresist after post ion implantation |
| US6620733B2 (en) * | 2001-02-12 | 2003-09-16 | Lam Research Corporation | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
-
2003
- 2003-09-16 CN CN03822166.7A patent/CN1682353A/zh active Pending
- 2003-09-16 JP JP2004537941A patent/JP2006507667A/ja not_active Withdrawn
- 2003-09-16 WO PCT/US2003/029275 patent/WO2004027826A2/en not_active Ceased
- 2003-09-16 KR KR1020057004564A patent/KR20050044806A/ko not_active Withdrawn
- 2003-09-16 AU AU2003270735A patent/AU2003270735A1/en not_active Abandoned
- 2003-09-16 DE DE10393277T patent/DE10393277T5/de not_active Withdrawn
- 2003-09-17 US US10/665,267 patent/US20040084150A1/en not_active Abandoned
- 2003-09-17 TW TW092125575A patent/TW200414279A/zh unknown
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