CN100549618C - 缺陷检查装置、缺陷检查方法和孔图形的检查方法 - Google Patents

缺陷检查装置、缺陷检查方法和孔图形的检查方法 Download PDF

Info

Publication number
CN100549618C
CN100549618C CNB2003101230055A CN200310123005A CN100549618C CN 100549618 C CN100549618 C CN 100549618C CN B2003101230055 A CNB2003101230055 A CN B2003101230055A CN 200310123005 A CN200310123005 A CN 200310123005A CN 100549618 C CN100549618 C CN 100549618C
Authority
CN
China
Prior art keywords
light
mentioned
substrate
turning back
diffraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2003101230055A
Other languages
English (en)
Chinese (zh)
Other versions
CN1532518A (zh
Inventor
杉原麻理
大森健雄
深泽和彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN1532518A publication Critical patent/CN1532518A/zh
Application granted granted Critical
Publication of CN100549618C publication Critical patent/CN100549618C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95692—Patterns showing hole parts, e.g. honeycomb filtering structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CNB2003101230055A 2003-03-26 2003-12-23 缺陷检查装置、缺陷检查方法和孔图形的检查方法 Expired - Lifetime CN100549618C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003085185A JP4529366B2 (ja) 2003-03-26 2003-03-26 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
JP085185/2003 2003-03-26

Publications (2)

Publication Number Publication Date
CN1532518A CN1532518A (zh) 2004-09-29
CN100549618C true CN100549618C (zh) 2009-10-14

Family

ID=33400167

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101230055A Expired - Lifetime CN100549618C (zh) 2003-03-26 2003-12-23 缺陷检查装置、缺陷检查方法和孔图形的检查方法

Country Status (5)

Country Link
US (1) US20040239918A1 (enExample)
JP (1) JP4529366B2 (enExample)
KR (2) KR20040086124A (enExample)
CN (1) CN100549618C (enExample)
TW (1) TW200423279A (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100456467B1 (ko) * 2001-12-10 2004-11-10 재단법인 포항산업과학연구원 협죽도과 식물 추출액 및 이를 이용한 녹조 현상 원인녹조류 방제방법
KR100478146B1 (ko) * 2002-08-30 2005-03-22 재단법인 포항산업과학연구원 협죽도과 식물의 잎 추출물을 함유하는 고려잔디갈색퍼짐병 방제용 조성물 및 이를 이용하여 갈색퍼짐병을방제하는 방법
JP4609089B2 (ja) * 2005-01-31 2011-01-12 凸版印刷株式会社 周期性パターンムラ検査装置および周期性パターン撮像方法
JP4696607B2 (ja) * 2005-03-14 2011-06-08 株式会社ニコン 表面検査装置
JP2007003376A (ja) * 2005-06-24 2007-01-11 Toppan Printing Co Ltd 周期性パターンムラ検査装置および周期性パターン撮像方法
JP4736629B2 (ja) * 2005-08-26 2011-07-27 株式会社ニコン 表面欠陥検査装置
JP2007064948A (ja) * 2005-09-02 2007-03-15 Nikon Corp 表面欠陥検査装置および表面欠陥検査方法
DK1946079T3 (en) * 2005-10-11 2018-03-12 Bt Imaging Pty Ltd PROCEDURE AND SYSTEM FOR INSPECTING INDIRECT BANDWOOD SEMICONDUCTOR STRUCTURE
KR100644050B1 (ko) * 2005-11-02 2006-11-10 동부일렉트로닉스 주식회사 반도체 소자의 감광막 패턴 결함 검사 방법 및 이를 적용한반도체 소자의 콘택홀 형성 방법
JP4699891B2 (ja) 2005-12-14 2011-06-15 シャープ株式会社 半導体装置及び半導体装置の外観検査方法
JPWO2007069457A1 (ja) * 2005-12-14 2009-05-21 株式会社ニコン 表面検査装置および表面検査方法
KR100965418B1 (ko) 2005-12-28 2010-06-24 엘아이지에이디피 주식회사 기판 결함 검출 장치
JP4548385B2 (ja) * 2006-05-10 2010-09-22 株式会社ニコン 表面検査装置
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
KR100802980B1 (ko) * 2006-06-28 2008-02-14 (주)미래컴퍼니 액정기판 검사장치 및 검사방법
US7923645B1 (en) 2007-06-20 2011-04-12 Amkor Technology, Inc. Metal etch stop fabrication method and structure
US7951697B1 (en) 2007-06-20 2011-05-31 Amkor Technology, Inc. Embedded die metal etch stop fabrication method and structure
US7990546B2 (en) * 2007-07-16 2011-08-02 Applied Materials Israel, Ltd. High throughput across-wafer-variation mapping
JP2009031212A (ja) * 2007-07-30 2009-02-12 Nikon Corp 表面検査装置および表面検査方法
US7958626B1 (en) 2007-10-25 2011-06-14 Amkor Technology, Inc. Embedded passive component network substrate fabrication method
CN101990636A (zh) * 2008-04-09 2011-03-23 株式会社尼康 表面检查方法和表面检查装置
JP2009300216A (ja) * 2008-06-12 2009-12-24 Nikon Corp 観察装置
US8724882B2 (en) * 2008-07-29 2014-05-13 Applied Materials Israel, Ltd. Mapping variations of a surface
EP2450944A4 (en) * 2009-07-01 2017-12-27 Nikon Corporation Exposure condition setting method and surface inspection apparatus
KR101640456B1 (ko) 2010-03-15 2016-07-19 삼성전자주식회사 디스플레이 패널의 각 픽셀들의 개구부를 통해 촬영하는 촬영 장치 및 방법
US9140546B2 (en) 2010-07-30 2015-09-22 Kla-Tencor Corporation Apparatus and method for three dimensional inspection of wafer saw marks
JP5601984B2 (ja) * 2010-11-16 2014-10-08 東洋鋼鈑株式会社 多孔板表面検査方法及び多孔板表面検査装置
US8791501B1 (en) 2010-12-03 2014-07-29 Amkor Technology, Inc. Integrated passive device structure and method
WO2012081587A1 (ja) 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP6036680B2 (ja) * 2011-02-25 2016-11-30 株式会社ニコン 検査装置および半導体装置の製造方法
KR101376450B1 (ko) * 2011-06-01 2014-03-19 다이닛뽕스크린 세이조오 가부시키가이샤 화상취득장치, 패턴검사장치 및 화상취득방법
JPWO2013081072A1 (ja) * 2011-11-29 2015-04-27 株式会社ニコン 測定装置、測定方法および半導体デバイス製造方法
KR101376831B1 (ko) * 2012-03-27 2014-03-20 삼성전기주식회사 표면결함 검사방법
TWI557406B (zh) * 2014-04-04 2016-11-11 Nuflare Technology Inc An imaging device, a defect inspection device, and a defect inspection method
US9606069B2 (en) * 2014-06-25 2017-03-28 Kla-Tencor Corporation Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate
US10712289B2 (en) * 2014-07-29 2020-07-14 Kla-Tencor Corp. Inspection for multiple process steps in a single inspection process
JP2016070730A (ja) * 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 画像取得装置および画像取得方法
CN106168466B (zh) 2015-05-21 2019-06-28 财团法人工业技术研究院 全域式影像检测系统及其检测方法
CN105021130B (zh) * 2015-08-04 2018-08-24 浙江大学台州研究院 一种石英晶片尺寸的测量方法
JP6630527B2 (ja) * 2015-09-30 2020-01-15 日東電工株式会社 貫通孔を有する粘着フィルムの検査方法
JP6688184B2 (ja) * 2016-07-20 2020-04-28 東レエンジニアリング株式会社 ワイドギャップ半導体基板の欠陥検査装置
US10429318B2 (en) 2017-12-19 2019-10-01 Industrial Technology Research Institute Detection system for a multilayer film and method thereof using dual image capture devices for capturing forward scattered light and back scattered light
US20190355110A1 (en) * 2018-05-15 2019-11-21 Camtek Ltd. Cross talk reduction
KR102486442B1 (ko) 2019-06-07 2023-01-09 주식회사 엘지화학 편광판의 액정얼룩 검사장치 및 편광판의 액정얼룩 검사방법
KR20200129033A (ko) * 2020-03-03 2020-11-17 주식회사 코엠에스 반도체 기판 보호필름 박리 여부 감시 장치 및 방법
CN114061491A (zh) * 2021-11-30 2022-02-18 北京理工大学珠海学院 一种用激光观测微孔缺陷的方法
CN114324369B (zh) * 2022-03-11 2022-06-07 北京新研创能科技有限公司 双极板表面划痕检测系统及方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646182B2 (ja) * 1986-06-27 1994-06-15 株式会社日立製作所 マスク上の異物検査装置およびその方法
JP3366682B2 (ja) * 1993-03-25 2003-01-14 グローリー工業株式会社 ハードディスクの欠陥検出方法
JP3712481B2 (ja) * 1995-12-28 2005-11-02 富士通株式会社 半導体装置の製造方法
US5777729A (en) * 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light
US5973777A (en) * 1996-06-25 1999-10-26 Hitachi, Ltd. Method and apparatus for inspecting defects of surface shape
JPH10206337A (ja) * 1997-01-17 1998-08-07 Nikon Corp 半導体ウエハの自動外観検査装置
JPH10233374A (ja) * 1997-02-19 1998-09-02 Hitachi Ltd 半導体装置の製造方法およびそのシステム
US6690469B1 (en) * 1998-09-18 2004-02-10 Hitachi, Ltd. Method and apparatus for observing and inspecting defects
JP3676092B2 (ja) * 1998-09-28 2005-07-27 株式会社リコー 表面欠陥検査装置
JP2000310512A (ja) * 1999-04-28 2000-11-07 Hitachi Ltd 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその装置
JP3769996B2 (ja) * 1999-09-20 2006-04-26 三菱電機株式会社 欠陥検査用半導体基板、半導体基板の検査方法および半導体基板検査用モニター装置
JP4469047B2 (ja) * 2000-01-27 2010-05-26 株式会社日立ハイテクノロジーズ 表面検査装置
KR100856357B1 (ko) * 2000-09-13 2008-09-04 가부시키가이샤 니콘 표면검사장치 및 표면검사방법
TWI285738B (en) * 2000-09-26 2007-08-21 Olympus Corp Defect detecting apparatus and computer readable medium
JP4153652B2 (ja) * 2000-10-05 2008-09-24 株式会社東芝 パターン評価装置及びパターン評価方法
US6768543B1 (en) * 2001-11-01 2004-07-27 Arun Ananth Aiyer Wafer inspection apparatus with unique illumination methodology and method of operation

Also Published As

Publication number Publication date
JP2004294194A (ja) 2004-10-21
KR101203027B1 (ko) 2012-11-21
KR20040086124A (ko) 2004-10-08
TW200423279A (en) 2004-11-01
TWI327348B (enExample) 2010-07-11
KR20120023160A (ko) 2012-03-12
JP4529366B2 (ja) 2010-08-25
CN1532518A (zh) 2004-09-29
US20040239918A1 (en) 2004-12-02

Similar Documents

Publication Publication Date Title
CN100549618C (zh) 缺陷检查装置、缺陷检查方法和孔图形的检查方法
CN101473219B (zh) 表面检查设备
US8446578B2 (en) Defect inspection apparatus, defect inspection method and method of inspecting hole pattern
JP4960026B2 (ja) フイルムの欠陥検査装置及びフイルムの製造方法
CN102334026B (zh) 表面检查装置及表面检查方法
CN101443654B (zh) 表面检查装置
US20060192953A1 (en) Surface inspection apparatus and surface inspection method
CN101622525A (zh) 观察方法、检查装置及检查方法
JPWO2007069457A1 (ja) 表面検査装置および表面検査方法
CN101460833A (zh) 表面检查设备
KR101248674B1 (ko) 표면 검사 장치 및 표면 검사 방법
JP2006105951A (ja) 欠陥検査方法
JP2010107466A (ja) 欠陥検査装置及び欠陥検査方法
US20100321677A1 (en) Surface inspecting apparatus and surface inspecting method
JP5287891B2 (ja) 欠陥検査方法
JP4853758B2 (ja) 表面検査装置および表面検査方法
JP4462232B2 (ja) 表面検査装置
JP2010107465A (ja) 欠陥検査装置及び欠陥検査方法
JP4462222B2 (ja) 表面検査装置
JP2007303904A (ja) 表面検査装置
JP2006258472A (ja) 欠陥検査装置
JP2009300296A (ja) 表面検査装置
JP5201443B2 (ja) 表面検査装置および表面検査方法
JP2011149951A (ja) 表面検査装置および表面検査方法
JP2009150777A (ja) 表面検査装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20091014