CN100533758C - 集成有鳍式fet的平面型衬底器件及其制造方法 - Google Patents

集成有鳍式fet的平面型衬底器件及其制造方法 Download PDF

Info

Publication number
CN100533758C
CN100533758C CNB2005800354842A CN200580035484A CN100533758C CN 100533758 C CN100533758 C CN 100533758C CN B2005800354842 A CNB2005800354842 A CN B2005800354842A CN 200580035484 A CN200580035484 A CN 200580035484A CN 100533758 C CN100533758 C CN 100533758C
Authority
CN
China
Prior art keywords
effect transistor
field effect
fin formula
substrate
formula field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800354842A
Other languages
English (en)
Chinese (zh)
Other versions
CN101103463A (zh
Inventor
布伦特·A.·安德森
爱德华·J.·诺瓦克
杰德·H.·兰金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN101103463A publication Critical patent/CN101103463A/zh
Application granted granted Critical
Publication of CN100533758C publication Critical patent/CN100533758C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2005800354842A 2004-10-18 2005-10-11 集成有鳍式fet的平面型衬底器件及其制造方法 Expired - Fee Related CN100533758C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/711,974 2004-10-18
US10/711,974 US6949768B1 (en) 2004-10-18 2004-10-18 Planar substrate devices integrated with finfets and method of manufacture

Publications (2)

Publication Number Publication Date
CN101103463A CN101103463A (zh) 2008-01-09
CN100533758C true CN100533758C (zh) 2009-08-26

Family

ID=34992630

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800354842A Expired - Fee Related CN100533758C (zh) 2004-10-18 2005-10-11 集成有鳍式fet的平面型衬底器件及其制造方法

Country Status (7)

Country Link
US (2) US6949768B1 (enExample)
EP (1) EP1805795A4 (enExample)
JP (1) JP4711446B2 (enExample)
KR (2) KR20100105779A (enExample)
CN (1) CN100533758C (enExample)
TW (1) TWI380343B (enExample)
WO (1) WO2006044349A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102842508A (zh) * 2011-06-24 2012-12-26 中国科学院微电子研究所 一种半导体场效应晶体管的制备方法
WO2012174822A1 (zh) * 2011-06-24 2012-12-27 中国科学院微电子研究所 半导体场效应晶体管的制备方法
US8778744B2 (en) 2011-06-24 2014-07-15 Institute of Microelectronics, Chinese Academy of Sciences Method for manufacturing semiconductor field effect transistor

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719043B2 (en) * 2004-07-12 2010-05-18 Nec Corporation Semiconductor device with fin-type field effect transistor and manufacturing method thereof.
JP2006049627A (ja) * 2004-08-05 2006-02-16 Toshiba Corp 半導体装置及びその製造方法
KR100612419B1 (ko) * 2004-10-19 2006-08-16 삼성전자주식회사 핀 트랜지스터 및 평판 트랜지스터를 갖는 반도체 소자 및그 형성 방법
JP2006261188A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US7920544B2 (en) * 2005-03-28 2011-04-05 Qualcomm Incorporated Method and apparatus for enhancing signal-to-noise ratio of position location measurements
JP2007018588A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体記憶装置および半導体記憶装置の駆動方法
WO2007049170A1 (en) * 2005-10-25 2007-05-03 Nxp B.V. Finfet transistors
US7512017B2 (en) * 2005-12-21 2009-03-31 Intel Corporation Integration of planar and tri-gate devices on the same substrate
US7264743B2 (en) * 2006-01-23 2007-09-04 Lam Research Corporation Fin structure formation
JP2007294857A (ja) * 2006-03-28 2007-11-08 Elpida Memory Inc 半導体装置及びその製造方法
US7803670B2 (en) * 2006-07-20 2010-09-28 Freescale Semiconductor, Inc. Twisted dual-substrate orientation (DSO) substrates
US7456471B2 (en) * 2006-09-15 2008-11-25 International Business Machines Corporation Field effect transistor with raised source/drain fin straps
US8368144B2 (en) * 2006-12-18 2013-02-05 Infineon Technologies Ag Isolated multigate FET circuit blocks with different ground potentials
US8492796B2 (en) * 2007-03-13 2013-07-23 Infineon Technologies Ag MuGFET switch
US7923337B2 (en) * 2007-06-20 2011-04-12 International Business Machines Corporation Fin field effect transistor devices with self-aligned source and drain regions
JP4459257B2 (ja) * 2007-06-27 2010-04-28 株式会社東芝 半導体装置
US9064963B2 (en) * 2007-09-28 2015-06-23 Infineon Technologies Ag Semiconductor structure
US8329564B2 (en) * 2007-10-26 2012-12-11 International Business Machines Corporation Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method
US7772651B2 (en) * 2008-01-11 2010-08-10 International Business Machines Corporation Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits
US7790543B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
US7786535B2 (en) * 2008-01-11 2010-08-31 International Business Machines Corporation Design structures for high-voltage integrated circuits
US7790524B2 (en) * 2008-01-11 2010-09-07 International Business Machines Corporation Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
WO2009110048A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置及びその製造方法
US8211786B2 (en) * 2008-02-28 2012-07-03 International Business Machines Corporation CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
US8331068B2 (en) * 2009-02-19 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection for FinFETs
US8305829B2 (en) * 2009-02-23 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same
US8305790B2 (en) * 2009-03-16 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical anti-fuse and related applications
US8957482B2 (en) * 2009-03-31 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse and related applications
US8912602B2 (en) * 2009-04-14 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US7968971B2 (en) * 2009-06-22 2011-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Thin-body bipolar device
US8461015B2 (en) * 2009-07-08 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. STI structure and method of forming bottom void in same
US8497528B2 (en) 2010-05-06 2013-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a strained structure
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8623728B2 (en) 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
US8759943B2 (en) 2010-10-08 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having notched fin structure and method of making the same
US8298925B2 (en) 2010-11-08 2012-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming ultra shallow junction
US8629478B2 (en) * 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
US8482073B2 (en) * 2010-03-25 2013-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including FINFETs and methods for forming the same
US8472227B2 (en) * 2010-01-27 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and methods for forming the same
US8980719B2 (en) 2010-04-28 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for doping fin field-effect transistors
US9484462B2 (en) * 2009-09-24 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure of fin field effect transistor
US8519481B2 (en) * 2009-10-14 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
US9112052B2 (en) 2009-10-14 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
US20110097867A1 (en) * 2009-10-22 2011-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of controlling gate thicknesses in forming fusi gates
US8436404B2 (en) 2009-12-30 2013-05-07 Intel Corporation Self-aligned contacts
US9040393B2 (en) 2010-01-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US8513723B2 (en) * 2010-01-19 2013-08-20 International Business Machines Corporation Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip
CN102315268B (zh) * 2010-07-01 2013-07-10 中国科学院微电子研究所 半导体器件及其制造方法
US8354319B2 (en) 2010-10-15 2013-01-15 International Business Machines Corporation Integrated planar and multiple gate FETs
US8603924B2 (en) 2010-10-19 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming gate dielectric material
US8769446B2 (en) 2010-11-12 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for increasing fin device density for unaligned fins
US8877602B2 (en) 2011-01-25 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms of doping oxide for forming shallow trench isolation
US8592915B2 (en) 2011-01-25 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Doped oxide for shallow trench isolation (STI)
CN102651321B (zh) * 2011-02-25 2015-03-04 中国科学院微电子研究所 一种半导体器件的制备方法
US8431453B2 (en) 2011-03-31 2013-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
US8842945B2 (en) * 2011-08-09 2014-09-23 Soitec Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
US9397104B2 (en) 2011-09-21 2016-07-19 Institute of Microelectronics, Chinese Academy of Sciences SRAM cell and method for manufacturing the same
CN103022038B (zh) * 2011-09-21 2015-06-10 中国科学院微电子研究所 Sram单元及其制作方法
CN113345952B (zh) 2011-12-22 2025-05-13 英特尔公司 具有颈状半导体主体的半导体器件以及形成不同宽度的半导体主体的方法
US20130173214A1 (en) * 2012-01-04 2013-07-04 International Business Machines Corporation Method and structure for inline electrical fin critical dimension measurement
US8587068B2 (en) 2012-01-26 2013-11-19 International Business Machines Corporation SRAM with hybrid FinFET and planar transistors
US8466012B1 (en) * 2012-02-01 2013-06-18 International Business Machines Corporation Bulk FinFET and SOI FinFET hybrid technology
US8916426B2 (en) 2012-03-27 2014-12-23 International Business Machines Corporation Passive devices for FinFET integrated circuit technologies
US8692291B2 (en) 2012-03-27 2014-04-08 International Business Machines Corporation Passive devices for FinFET integrated circuit technologies
US9219056B2 (en) 2012-03-27 2015-12-22 International Business Machines Corporation Passive devices for FinFET integrated circuit technologies
US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
US8586449B1 (en) 2012-08-14 2013-11-19 International Business Machines Corporation Raised isolation structure self-aligned to fin structures
US8987823B2 (en) * 2012-11-07 2015-03-24 International Business Machines Corporation Method and structure for forming a localized SOI finFET
US8759874B1 (en) * 2012-11-30 2014-06-24 Stmicroelectronics, Inc. FinFET device with isolated channel
US8890249B2 (en) 2012-11-30 2014-11-18 International Business Machines Corporation Bulk FinFET ESD device
US9054124B2 (en) 2012-12-14 2015-06-09 International Business Machines Corporation Electrostatic discharge resistant diodes
FR3005309B1 (fr) 2013-05-02 2016-03-11 Commissariat Energie Atomique Transistors a nanofils et planaires cointegres sur substrat soi utbox
US8963259B2 (en) * 2013-05-31 2015-02-24 Globalfoundries Inc. Device isolation in finFET CMOS
US8957478B2 (en) 2013-06-24 2015-02-17 International Business Machines Corporation Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
US9515184B2 (en) * 2013-09-12 2016-12-06 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement with multiple-height fins and substrate trenches
US9048123B2 (en) 2013-09-19 2015-06-02 International Business Machines Corporation Interdigitated finFETs
US9312272B2 (en) 2013-11-27 2016-04-12 Globalfoundries Inc. Implementing buried FET utilizing drain of finFET as gate of buried FET
US9059020B1 (en) 2013-12-02 2015-06-16 International Business Machins Corporation Implementing buried FET below and beside FinFET on bulk substrate
US9099570B2 (en) * 2013-12-05 2015-08-04 Stmicroelectronics, Inc. Method for the formation of dielectric isolated fin structures for use, for example, in FinFET devices
US20150171217A1 (en) * 2013-12-12 2015-06-18 Texas Instruments Incorporated Design and integration of finfet device
US9443851B2 (en) * 2014-01-03 2016-09-13 Samsung Electronics Co., Ltd. Semiconductor devices including finFETs and local interconnect layers and methods of fabricating the same
US9123585B1 (en) 2014-02-11 2015-09-01 International Business Machines Corporation Method to form group III-V and Si/Ge FINFET on insulator
US9129863B2 (en) 2014-02-11 2015-09-08 International Business Machines Corporation Method to form dual channel group III-V and Si/Ge FINFET CMOS
KR102171023B1 (ko) * 2014-07-21 2020-10-29 삼성전자주식회사 반도체 소자 제조방법
KR102245133B1 (ko) 2014-10-13 2021-04-28 삼성전자 주식회사 이종 게이트 구조의 finFET를 구비한 반도체 소자 및 그 제조방법
US9391065B1 (en) 2015-06-29 2016-07-12 Globalfoundries Inc. Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
WO2017078920A1 (en) 2015-11-03 2017-05-11 Silicon Storage Technology, Inc. Split gate non-volatile flash memory cell having metal gates and method of making same
KR102402771B1 (ko) 2015-12-11 2022-05-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US9899378B2 (en) 2015-12-14 2018-02-20 International Business Machines Corporation Simultaneously fabricating a high voltage transistor and a finFET
EP3182461B1 (en) * 2015-12-16 2022-08-03 IMEC vzw Method for fabricating finfet technology with locally higher fin-to-fin pitch
US9748389B1 (en) * 2016-03-25 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved source drain epitaxy
US10290654B2 (en) 2016-05-20 2019-05-14 Globalfoundries Inc. Circuit structures with vertically spaced transistors and fabrication methods
US10147802B2 (en) * 2016-05-20 2018-12-04 Globalfoundries Inc. FINFET circuit structures with vertically spaced transistors and fabrication methods
US9646962B1 (en) 2016-10-05 2017-05-09 International Business Machines Corporation Low leakage gate controlled vertical electrostatic discharge protection device integration with a planar FinFET
RU2670248C1 (ru) * 2017-09-05 2018-10-19 Акционерное общество "Научно-исследовательский институт молекулярной электроники" Способ формирования локальной захороненной диэлектрической области изоляции активной части транзисторов с трехмерной структурой затвора (FinFET)
US11728335B2 (en) * 2019-01-25 2023-08-15 Intel Corporation Buried channel structure integrated with non-planar structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770516B2 (en) * 2002-09-05 2004-08-03 Taiwan Semiconductor Manufacturing Company Method of forming an N channel and P channel FINFET device on the same semiconductor substrate
CN1534745A (zh) * 2003-03-26 2004-10-06 ̨������·����ɷ����޹�˾ 多栅极晶体管的结构及其制造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179166A (ja) * 1990-11-09 1992-06-25 Hitachi Ltd 絶縁ゲート半導体装置およびその製造方法
JP2789931B2 (ja) * 1991-05-27 1998-08-27 日本電気株式会社 半導体装置
JP3462301B2 (ja) * 1995-06-16 2003-11-05 三菱電機株式会社 半導体装置及びその製造方法
US6140163A (en) * 1997-07-11 2000-10-31 Advanced Micro Devices, Inc. Method and apparatus for upper level substrate isolation integrated with bulk silicon
DE69839780D1 (de) * 1997-12-19 2008-09-04 Advanced Micro Devices Inc Silizium auf eine isolator-konfiguration welche mit der massen-cmos-architektur kompatibel ist
US6093585A (en) * 1998-05-08 2000-07-25 Lsi Logic Corporation High voltage tolerant thin film transistor
US6252284B1 (en) 1999-12-09 2001-06-26 International Business Machines Corporation Planarized silicon fin device
US6607950B2 (en) * 2000-03-30 2003-08-19 Interuniversitair Microelektronic Centrum (Imec) MIS transistors with a metal gate and high-k dielectric and method of forming
JP2002057220A (ja) * 2000-08-11 2002-02-22 Seiko Epson Corp 半導体装置およびその製造方法
US6720231B2 (en) 2002-01-28 2004-04-13 International Business Machines Corporation Fin-type resistors
JP2003229575A (ja) * 2002-02-04 2003-08-15 Hitachi Ltd 集積半導体装置及びその製造方法
JP3782021B2 (ja) * 2002-02-22 2006-06-07 株式会社東芝 半導体装置、半導体装置の製造方法、半導体基板の製造方法
US6995412B2 (en) 2002-04-12 2006-02-07 International Business Machines Corporation Integrated circuit with capacitors having a fin structure
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
EP1383166A3 (en) * 2002-07-16 2006-10-11 Interuniversitair Microelektronica Centrum ( Imec) FIN field effect transistor device and a method for manufacturing such device
JP4546021B2 (ja) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 絶縁ゲート型電界効果型トランジスタ及び半導体装置
US6670516B1 (en) * 2002-12-20 2003-12-30 Uop Llc Process for producing phenyl-alkanes using olefin isomerization and paraffin recycle
JP2004214413A (ja) * 2002-12-27 2004-07-29 Toshiba Corp 半導体装置
CN1762047A (zh) * 2003-03-20 2006-04-19 松下电器产业株式会社 半导体装置及其制造方法
US20050003592A1 (en) * 2003-06-18 2005-01-06 Jones A. Brooke All-around MOSFET gate and methods of manufacture thereof
JPWO2005022637A1 (ja) * 2003-08-28 2007-11-01 日本電気株式会社 フィン型電界効果トランジスタを有する半導体装置
US7211864B2 (en) * 2003-09-15 2007-05-01 Seliskar John J Fully-depleted castellated gate MOSFET device and method of manufacture thereof
US7719043B2 (en) * 2004-07-12 2010-05-18 Nec Corporation Semiconductor device with fin-type field effect transistor and manufacturing method thereof.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770516B2 (en) * 2002-09-05 2004-08-03 Taiwan Semiconductor Manufacturing Company Method of forming an N channel and P channel FINFET device on the same semiconductor substrate
CN1534745A (zh) * 2003-03-26 2004-10-06 ̨������·����ɷ����޹�˾ 多栅极晶体管的结构及其制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102842508A (zh) * 2011-06-24 2012-12-26 中国科学院微电子研究所 一种半导体场效应晶体管的制备方法
WO2012174822A1 (zh) * 2011-06-24 2012-12-27 中国科学院微电子研究所 半导体场效应晶体管的制备方法
US8778744B2 (en) 2011-06-24 2014-07-15 Institute of Microelectronics, Chinese Academy of Sciences Method for manufacturing semiconductor field effect transistor
CN102842508B (zh) * 2011-06-24 2015-03-04 中国科学院微电子研究所 一种半导体场效应晶体管的制备方法

Also Published As

Publication number Publication date
WO2006044349A2 (en) 2006-04-27
WO2006044349A9 (en) 2007-08-16
EP1805795A2 (en) 2007-07-11
WO2006044349A3 (en) 2007-06-07
CN101103463A (zh) 2008-01-09
TW200614334A (en) 2006-05-01
KR20100105779A (ko) 2010-09-29
KR100985639B1 (ko) 2010-10-05
US7368354B2 (en) 2008-05-06
US20060084212A1 (en) 2006-04-20
JP2008517464A (ja) 2008-05-22
US6949768B1 (en) 2005-09-27
EP1805795A4 (en) 2010-10-06
TWI380343B (en) 2012-12-21
KR20070064346A (ko) 2007-06-20
JP4711446B2 (ja) 2011-06-29

Similar Documents

Publication Publication Date Title
CN100533758C (zh) 集成有鳍式fet的平面型衬底器件及其制造方法
US10692873B2 (en) Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions
US7211864B2 (en) Fully-depleted castellated gate MOSFET device and method of manufacture thereof
US9754842B2 (en) FinFET with dummy gate on non-recessed shallow trench isolation (STI)
US6475890B1 (en) Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology
CN101226941B (zh) 半导体结构及其制造方法
US7964893B2 (en) Forming ESD diodes and BJTs using FinFET compatible processes
US10903369B2 (en) Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
US8859379B2 (en) Stress enhanced finFET devices
US7439139B2 (en) Fully-depleted castellated gate MOSFET device and method of manufacture thereof
US10957799B2 (en) Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions
US20160329326A1 (en) Sub-fin doped bulk fin field effect transistor (finfet), integrated circuit (ic) and method of manufacture
US11569235B2 (en) Semiconductor device and method of manufacturing the same
US10460982B1 (en) Formation of semiconductor devices with dual trench isolations
US6958516B2 (en) Discriminative SOI with oxide holes underneath DC source/drain
US9059040B2 (en) Structure and method for reducing floating body effect of SOI MOSFETS
CN103165428B (zh) 制作半导体器件的方法
US20230110073A1 (en) Airgap spacer of finfet device with backside bpr and power distribution network
US6423599B1 (en) Method for fabricating a field effect transistor having dual gates in SOI (semiconductor on insulator) technology
US20140015053A1 (en) Self-protected metal-oxide-semiconductor field-effect transistor
US20160005813A1 (en) Fin structures and methods of manfacturing the fin structures, and fin transistors having the fin structures and methods of manufacturing the fin transistors
US20250089327A1 (en) Low external resistance last nanosheet
WO2023137974A1 (zh) 一种半导体结构和半导体结构的制备方法
CN120018548A (zh) 嵌入式源/漏极mos管及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171120

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171120

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090826

CF01 Termination of patent right due to non-payment of annual fee