CN100530568C - Mos栅器件制造方法 - Google Patents

Mos栅器件制造方法 Download PDF

Info

Publication number
CN100530568C
CN100530568C CNB038106094A CN03810609A CN100530568C CN 100530568 C CN100530568 C CN 100530568C CN B038106094 A CNB038106094 A CN B038106094A CN 03810609 A CN03810609 A CN 03810609A CN 100530568 C CN100530568 C CN 100530568C
Authority
CN
China
Prior art keywords
paster
source
grid
metal layer
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038106094A
Other languages
English (en)
Chinese (zh)
Other versions
CN1653602A (zh
Inventor
理查德·A·布朗夏尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/142,600 external-priority patent/US6710414B2/en
Priority claimed from US10/142,622 external-priority patent/US6861337B2/en
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of CN1653602A publication Critical patent/CN1653602A/zh
Application granted granted Critical
Publication of CN100530568C publication Critical patent/CN100530568C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB038106094A 2002-05-10 2003-05-09 Mos栅器件制造方法 Expired - Fee Related CN100530568C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/142,600 US6710414B2 (en) 2002-05-10 2002-05-10 Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes
US10/142,622 US6861337B2 (en) 2002-05-10 2002-05-10 Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes
US10/142,622 2002-05-10
US10/142,600 2002-05-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN200910150498A Division CN101697349A (zh) 2002-05-10 2003-05-09 用于mos栅器件的表面几何结构

Publications (2)

Publication Number Publication Date
CN1653602A CN1653602A (zh) 2005-08-10
CN100530568C true CN100530568C (zh) 2009-08-19

Family

ID=29423049

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB038106094A Expired - Fee Related CN100530568C (zh) 2002-05-10 2003-05-09 Mos栅器件制造方法
CN200910150498A Pending CN101697349A (zh) 2002-05-10 2003-05-09 用于mos栅器件的表面几何结构

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200910150498A Pending CN101697349A (zh) 2002-05-10 2003-05-09 用于mos栅器件的表面几何结构

Country Status (6)

Country Link
EP (1) EP1504467A1 (ja)
JP (1) JP4938236B2 (ja)
CN (2) CN100530568C (ja)
AU (1) AU2003241408A1 (ja)
TW (1) TWI268549B (ja)
WO (1) WO2003096406A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004048278B3 (de) * 2004-10-05 2006-06-01 X-Fab Semiconductor Foundries Ag Simulations- und/oder Layoutverfahren für Leistungstransistoren, die für unterschiedliche Leistungen ausgelegt sind
EP2308096A1 (en) * 2008-07-28 2011-04-13 Nxp B.V. Integrated circuit and method for manufacturing an integrated circuit
JP5742627B2 (ja) * 2011-09-26 2015-07-01 住友電気工業株式会社 半導体装置および半導体装置の製造方法
JP5630552B2 (ja) * 2013-10-15 2014-11-26 富士電機株式会社 炭化珪素半導体装置およびその製造方法
WO2017002368A1 (ja) * 2015-07-01 2017-01-05 パナソニックＩｐマネジメント株式会社 半導体装置
US11031343B2 (en) 2019-06-21 2021-06-08 International Business Machines Corporation Fins for enhanced die communication
EP3863065A1 (en) * 2020-02-04 2021-08-11 Infineon Technologies Austria AG Semiconductor die and method of manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5016080A (en) * 1988-10-07 1991-05-14 Exar Corporation Programmable die size continuous array
US5499124A (en) * 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
GB9106720D0 (en) * 1991-03-28 1991-05-15 Secr Defence Large area liquid crystal displays
AU2546897A (en) * 1996-03-25 1997-10-17 Rainbow Displays, Inc. Tiled, flat-panel displays with color-correction capability
JP3276325B2 (ja) * 1996-11-28 2002-04-22 松下電器産業株式会社 半導体装置
JP2001352063A (ja) * 2000-06-09 2001-12-21 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP3597762B2 (ja) * 2000-07-24 2004-12-08 株式会社日立製作所 半導体集積回路及びその製造方法

Also Published As

Publication number Publication date
WO2003096406A1 (en) 2003-11-20
JP4938236B2 (ja) 2012-05-23
TW200403730A (en) 2004-03-01
EP1504467A1 (en) 2005-02-09
AU2003241408A1 (en) 2003-11-11
CN1653602A (zh) 2005-08-10
JP2005525701A (ja) 2005-08-25
CN101697349A (zh) 2010-04-21
TWI268549B (en) 2006-12-11

Similar Documents

Publication Publication Date Title
JP3136885B2 (ja) パワーｍｏｓｆｅｔ
TWI550851B (zh) 具有平面狀通道的垂直功率金氧半場效電晶體
US6724042B2 (en) Super-junction semiconductor device
JP5638645B2 (ja) 高電圧垂直トランジスタで集積された検知トランジスタ
US6936890B2 (en) Edge termination in MOS transistors
US6600194B2 (en) Field-effect semiconductor devices
CN102184952B (zh) 一种垂直电容耗尽型功率器件及制作方法
CN104854701B (zh) 半导体装置
KR19990037698A (ko) 트랜지스터 및 그 형성 방법
PL123961B1 (en) High power mosfet type device
JP2003505886A (ja) セル状トレンチゲート電界効果トランジスタ
JP2010062557A (ja) トレンチゲート構造を有する半導体デバイスおよびその製造方法
CN104051540A (zh) 超级结器件及其制造方法
JP7443702B2 (ja) 半導体装置
CN100530568C (zh) Mos栅器件制造方法
US20110034010A1 (en) Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device
US8575700B2 (en) Charge-balance power device comprising columnar structures and having reduced resistance
US6861337B2 (en) Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes
US7432145B2 (en) Power semiconductor device with a base region and method of manufacturing same
US6710414B2 (en) Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes
JP3346076B2 (ja) パワーｍｏｓｆｅｔ
CN101228636B (zh) 功率半导体器件以及制造功率半导体器件的方法
CN102522338A (zh) 高压超结mosfet结构及p型漂移区形成方法
CN100565907C (zh) 源极及/或漏极区域中充填区域的晶体管
JP2009158545A (ja) 横型ｍｏｓ半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090819

Termination date: 20100509