TWI268549B - A surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes and method for using same - Google Patents

A surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes and method for using same

Info

Publication number
TWI268549B
TWI268549B TW092112471A TW92112471A TWI268549B TW I268549 B TWI268549 B TW I268549B TW 092112471 A TW092112471 A TW 092112471A TW 92112471 A TW92112471 A TW 92112471A TW I268549 B TWI268549 B TW I268549B
Authority
TW
Taiwan
Prior art keywords
new
metal
mos
manufacture
allows
Prior art date
Application number
TW092112471A
Other languages
Chinese (zh)
Other versions
TW200403730A (en
Inventor
Richard A Blanchard
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/142,600 external-priority patent/US6710414B2/en
Priority claimed from US10/142,622 external-priority patent/US6861337B2/en
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of TW200403730A publication Critical patent/TW200403730A/en
Application granted granted Critical
Publication of TWI268549B publication Critical patent/TWI268549B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A surface geometry for a MOS-gated device is provided that allows device size to be varied in both the x-axis and the y-axis by predetermined increments. The actual device size is set or "programmed" by the metal and pad masks or the contact metal and pad masks. This approach saves both time and expense, since only new contact, metal and pad masks, or new metal and pad mask are required for each new device. Wafers may also be manufactured and stored at an inventory location prior to contact or metal mask, significantly reducing the time required to manufacture new devices. It is also be possible to qualify a family of devices made using this approach without qualifying each device. In addition, the location of the source or the source and gate bonding pads may be easily moved for assembly in a new package or for a new application.
TW092112471A 2002-05-10 2003-05-07 A surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes and method for using same TWI268549B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/142,600 US6710414B2 (en) 2002-05-10 2002-05-10 Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes
US10/142,622 US6861337B2 (en) 2002-05-10 2002-05-10 Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes

Publications (2)

Publication Number Publication Date
TW200403730A TW200403730A (en) 2004-03-01
TWI268549B true TWI268549B (en) 2006-12-11

Family

ID=29423049

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092112471A TWI268549B (en) 2002-05-10 2003-05-07 A surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes and method for using same

Country Status (6)

Country Link
EP (1) EP1504467A1 (en)
JP (1) JP4938236B2 (en)
CN (2) CN100530568C (en)
AU (1) AU2003241408A1 (en)
TW (1) TWI268549B (en)
WO (1) WO2003096406A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004048278B3 (en) * 2004-10-05 2006-06-01 X-Fab Semiconductor Foundries Ag Simulation and / or layout method for power transistors designed for different powers
EP2308096A1 (en) * 2008-07-28 2011-04-13 Nxp B.V. Integrated circuit and method for manufacturing an integrated circuit
JP5742627B2 (en) * 2011-09-26 2015-07-01 住友電気工業株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5630552B2 (en) * 2013-10-15 2014-11-26 富士電機株式会社 Silicon carbide semiconductor device and manufacturing method thereof
JP6598037B2 (en) * 2015-07-01 2019-10-30 パナソニックＩｐマネジメント株式会社 Semiconductor device
US11031343B2 (en) 2019-06-21 2021-06-08 International Business Machines Corporation Fins for enhanced die communication
EP3863065A1 (en) * 2020-02-04 2021-08-11 Infineon Technologies Austria AG Semiconductor die and method of manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5016080A (en) * 1988-10-07 1991-05-14 Exar Corporation Programmable die size continuous array
US5499124A (en) * 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
GB9106720D0 (en) * 1991-03-28 1991-05-15 Secr Defence Large area liquid crystal displays
AU2546897A (en) * 1996-03-25 1997-10-17 Rainbow Displays, Inc. Tiled, flat-panel displays with color-correction capability
JP3276325B2 (en) * 1996-11-28 2002-04-22 松下電器産業株式会社 Semiconductor device
JP2001352063A (en) * 2000-06-09 2001-12-21 Sanyo Electric Co Ltd Insulation gate type semiconductor device
JP3597762B2 (en) * 2000-07-24 2004-12-08 株式会社日立製作所 Semiconductor integrated circuit and method of manufacturing the same

Also Published As

Publication number Publication date
WO2003096406A1 (en) 2003-11-20
TW200403730A (en) 2004-03-01
CN1653602A (en) 2005-08-10
EP1504467A1 (en) 2005-02-09
AU2003241408A1 (en) 2003-11-11
JP2005525701A (en) 2005-08-25
CN100530568C (en) 2009-08-19
JP4938236B2 (en) 2012-05-23
CN101697349A (en) 2010-04-21

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