CN100514574C - 成膜方法、半导体装置的制造方法、半导体装置、基板处理系统 - Google Patents

成膜方法、半导体装置的制造方法、半导体装置、基板处理系统 Download PDF

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CN100514574C
CN100514574C CNB2004800233557A CN200480023355A CN100514574C CN 100514574 C CN100514574 C CN 100514574C CN B2004800233557 A CNB2004800233557 A CN B2004800233557A CN 200480023355 A CN200480023355 A CN 200480023355A CN 100514574 C CN100514574 C CN 100514574C
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China
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film
carbon film
opening
added carbon
processing
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Expired - Fee Related
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Chinese (zh)
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CN1836317A (zh
Inventor
川村刚平
小林保男
西泽贤一
寺井康浩
浅野明
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
CNB2004800233557A 2003-08-15 2004-07-23 成膜方法、半导体装置的制造方法、半导体装置、基板处理系统 Expired - Fee Related CN100514574C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003293904A JP4413556B2 (ja) 2003-08-15 2003-08-15 成膜方法、半導体装置の製造方法
JP293904/2003 2003-08-15

Publications (2)

Publication Number Publication Date
CN1836317A CN1836317A (zh) 2006-09-20
CN100514574C true CN100514574C (zh) 2009-07-15

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US (2) US7875549B2 (enExample)
EP (2) EP1655771B1 (enExample)
JP (1) JP4413556B2 (enExample)
KR (1) KR100782673B1 (enExample)
CN (1) CN100514574C (enExample)
TW (1) TW200518221A (enExample)
WO (1) WO2005017990A1 (enExample)

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KR100887449B1 (ko) * 2003-09-17 2009-03-10 도쿄엘렉트론가부시키가이샤 저유전율 절연막의 형성 방법, 플라즈마 처리 장치, 및기록 매체
JP4555143B2 (ja) * 2004-05-11 2010-09-29 東京エレクトロン株式会社 基板の処理方法
JP2006135303A (ja) * 2004-10-05 2006-05-25 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置、並びにプラズマ成膜装置に用いられる記憶媒体
JP5194393B2 (ja) * 2006-06-23 2013-05-08 東京エレクトロン株式会社 半導体装置の製造方法
US7964496B2 (en) * 2006-11-21 2011-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Schemes for forming barrier layers for copper in interconnect structures
JP5261964B2 (ja) * 2007-04-10 2013-08-14 東京エレクトロン株式会社 半導体装置の製造方法
US8197913B2 (en) * 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
US20110081500A1 (en) * 2009-10-06 2011-04-07 Tokyo Electron Limited Method of providing stable and adhesive interface between fluorine-based low-k material and metal barrier layer
JP5700513B2 (ja) 2010-10-08 2015-04-15 国立大学法人東北大学 半導体装置の製造方法および半導体装置
JP2012216633A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ窒化処理方法、プラズマ窒化処理装置および半導体装置の製造方法
JP5364765B2 (ja) * 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
WO2013125647A1 (ja) * 2012-02-22 2013-08-29 東京エレクトロン株式会社 半導体装置の製造方法及び半導体装置
JP6045975B2 (ja) 2012-07-09 2016-12-14 東京エレクトロン株式会社 カーボン膜の成膜方法および成膜装置
JP2014036148A (ja) * 2012-08-09 2014-02-24 Tokyo Electron Ltd 多層膜をエッチングする方法、及びプラズマ処理装置
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
KR102021708B1 (ko) 2015-09-17 2019-09-16 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
CN108751123B (zh) * 2018-05-21 2022-05-20 赛莱克斯微系统科技（北京）有限公司 一种接触窗的形成方法
CN111686766B (zh) * 2019-03-11 2021-09-21 中国科学院福建物质结构研究所 一种金属-氟掺杂碳复合材料及其制备方法和在电催化固氮中的应用
JP6960953B2 (ja) * 2019-03-20 2021-11-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

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JP2002329682A (ja) * 2001-04-27 2002-11-15 Anelva Corp Ｃｕ薄膜作製方法

Also Published As

Publication number Publication date
EP2284875A3 (en) 2011-08-31
KR20060038469A (ko) 2006-05-03
CN1836317A (zh) 2006-09-20
TWI373073B (enExample) 2012-09-21
US7875549B2 (en) 2011-01-25
US20100317188A1 (en) 2010-12-16
TW200518221A (en) 2005-06-01
EP2284875A2 (en) 2011-02-16
JP4413556B2 (ja) 2010-02-10
WO2005017990A1 (ja) 2005-02-24
EP1655771A4 (en) 2008-02-27
US20060223306A1 (en) 2006-10-05
EP1655771B1 (en) 2012-10-17
KR100782673B1 (ko) 2007-12-07
US8119518B2 (en) 2012-02-21
JP2005064302A (ja) 2005-03-10
EP1655771A1 (en) 2006-05-10

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