CN100499032C - 多步骤低温间隔层制作方法 - Google Patents
多步骤低温间隔层制作方法 Download PDFInfo
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- CN100499032C CN100499032C CN 200510029705 CN200510029705A CN100499032C CN 100499032 C CN100499032 C CN 100499032C CN 200510029705 CN200510029705 CN 200510029705 CN 200510029705 A CN200510029705 A CN 200510029705A CN 100499032 C CN100499032 C CN 100499032C
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CN 200510029705 CN100499032C (zh) | 2005-09-15 | 2005-09-15 | 多步骤低温间隔层制作方法 |
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CN 200510029705 CN100499032C (zh) | 2005-09-15 | 2005-09-15 | 多步骤低温间隔层制作方法 |
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CN1933107A CN1933107A (zh) | 2007-03-21 |
CN100499032C true CN100499032C (zh) | 2009-06-10 |
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CN1933107A (zh) | 2007-03-21 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20111129 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |