KR20020030569A - 원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법 - Google Patents
원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 title abstract description 28
- 125000006850 spacer group Chemical group 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 52
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- -1 silicon halide Chemical class 0.000 claims description 11
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000008096 xylene Substances 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract description 16
- 239000011800 void material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 128
- 239000000376 reactant Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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Abstract
Description
Claims (20)
- 내부에 트랜치가 형성된 반도체 기판;상기 트랜치 내벽 및 바닥 상에 형성되고, 원자층 증착법에 의하여 실리콘 질화막 및 실리콘 산화막의 다중막으로 형성된 라이너막; 및상기 트랜치에 보이드 없이 매몰된 매몰 절연막을 포함하여 이루어지는 반도체 소자.
- 제1항에 있어서, 상기 트랜치 및 매몰 절연막이 형성되어 있는 반도체 기판 상에 형성된 게이트 스택 패턴들과,상기 게이트 스택 패턴들의 양측벽에 형성된 게이트 스페이서와, 상기 게이트 스페이서 상에 원자층 증착법에 의하여 실리콘 산화막과 실리콘 질화막의 다중막으로 형성된 제1 버블 방지막과,상기 제1 버블방지막 상의 상기 게이트 스택 패턴들의 사이를 보이드 없이 매립되어 있는 제1 매립 절연막을 더 포함하여 이루어지는 것을 특징으로 하는 반체 소자.
- 제2항에 있어서, 상기 게이트 스페이서는 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 것을 특징으로 하는 반도체 소자.
- 제2항에 있어서, 상기 제1 매립 절연막 상에 형성된 비트라인 스택 패턴들과,상기 비트 라인 스택 패턴들의 양측벽에 형성된 비트라인 스페이서와,상기 비트 라인 스페이서 및 비트 라인 스택 패턴들 상에 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 제2 버블 방지막과,상기 제2 버블 방지막 사이의 비트라인 스택 패턴들 사이를 보이드 없이 매립되어 있는 매립 절연막을 더 포함하여 이루어지는 것을 특징으로 하는 반도체 소자.
- 제4항에 있어서, 상기 비트 라인 스페이서는 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 것을 특징으로 하는 반도체 소자.
- 내부에 트랜치가 형성된 반도체 기판;상기 트랜치 내벽 및 바닥에 형성된 라이너막;상기 트랜치에 매몰된 매몰 절연막;상기 반도체 기판 상에 형성된 게이트 스택 패턴들;상기 게이트 스택 패턴들의 양측벽에 형성된 게이트 스페이서;상기 게이트 스페이서 상에 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 제1 버블방지막;상기 게이트 스페이서 상의 게이트 스택 패턴들 사이를 매립하는 제1 매립 절연막;상기 제1 매립 절연막 상에 형성된 비트라인 스택 패턴들;상기 비트 라인 스택 패턴들의 양측벽에 형성된 비트라인 스페이서;상기 비트 라인 스페이서 및 비트 라인 스택 패턴들 상에 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 제2 버블방지막; 및상기 제2 버블방지막 사이의 비트라인 스택 패턴들을 보이드 없이 매립되어 있는 제2 매립 절연막을 포함하여 이루어지는 것을 특징으로 하는 반도체 소자.
- 제6항에 있어서, 상기 라이너막과, 상기 게이트 스페이서 및 비트 라인 스페이서는 각각 원자층 증착법에 의하여 실리콘 질화막 및 실리콘 산화막의 다중막, 및 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 것을 특징으로 하는 반도체 소자.
- 반도체 기판에 일정 깊이로 트랜치를 형성하는 단계;상기 트랜치 내벽 및 바닥 상에 원자층 증착법에 의하여 실리콘 질화막 및실리콘 산화막의 다중막으로 형성된 라이너막을 형성하는 단계; 및상기 트랜치를 보이드 없이 매립하는 매몰 절연막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제8항에 있어서, 상기 라이너막은 진공 브레이크 없이 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제8항에 있어서, 상기 라이너막을 구성하는 실리콘 질화막은 사일렌, 실리콘 알킬(Si-alkyl), 실리콘 할라이드(Si-halide) 또는 실리콘 아미드(Si-amide)의 실리콘 소스와, 암모니아, 플라즈마 암모니아 또는 플라즈마 질소의 질화제를 이용하여 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제8항에 있어서, 상기 라이너막을 구성하는 실리콘 산화막은 사일렌, 실리콘 알콕사이드(Si-alkoxide), 실리콘 알킬(Si-alkyl), 실리콘 할라이드(Si-halide) 또는 실리콘 아미드(Si-amide)의 실리콘 소스와, 수증기, 과산화수소, 오존, 플라즈마 산소(plasma O2), 산화 질소(N2O) 또는 플라즈마 산화질소(plasma N2O)의 산화제를 이용하여 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제8항에 있어서, 상기 트랜치 및 매몰 절연막이 형성된 반도체 기판 상에 게이트 스택 패턴들을 형성하는 단계와,상기 게이트 스택 패턴들의 양측벽에 게이트 스페이서를 형성하는 단계와,상기 게이트 스페이서 및 게이트 스택 패턴들 상에 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 제1 버블 방지막을 형성하는 단계와,상기 제1 버블 방지막 상의 상기 게이트 스택 패턴들의 사이를 보이드 없이 제1 매립 절연막을 매립하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 반체 소자의 제조방법.
- 제12항에 있어서, 상기 제1 버블 방지막은 진공 브레이크 없이 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제12항에 있어서, 상기 게이트 스페이서는 원자층 증착법에 의하여 실리콘 질화막 및 실리콘 산화막의 다중막으로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제12항에 있어서, 상기 제1 매립 절연막 상에 비트라인 스택 패턴들을 형성하는 단계와,상기 비트 라인 스택 패턴들의 양측벽에 비트라인 스페이서를 형성하는 단계와,상기 비트 라인 스페이서 및 비트 라인 스택 패턴들 상에 원자층 증착법에의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 제2 버블방지막을 형성하는 단계와,상기 제2 버블방지막 상의 비트 라인 스택 패턴 사이를 보이드 없이 제2 매립 절연막으로 매립하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제14항에 있어서, 상기 제2 버블 방지막은 진공 브레이크 없이 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제14항에 있어서, 상기 비트 라인 스페이서는 원자층 증착법에 의하여 실리콘 질화막 및 실리콘 산화막의 다중막으로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 반도체 기판에 일정 깊이로 트랜치를 형성하는 단계;상기 트랜치 내벽 및 바닥 상에 원자층 증착법에 의하여 실리콘 질화막 및 실리콘 산화막의 다중막으로 형성된 라이너막을 형성하는 단계; 및상기 트랜치를 보이드 없이 매립하는 매몰 절연막을 형성하는 단계;상기 트랜치 및 매몰 절연막이 형성된 반도체 기판 상에 게이트 스택 패턴들을 형성하는 단계;상기 게이트 스택 패턴들의 양측벽에 게이트 스페이서를 형성하는 단계;상기 게이트 스페이서 및 게이트 스택 패턴들 상에 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 제1 버블 방지막을 형성하는 단계;상기 제1 버블방지막 상의 상기 게이트 스택 패턴들의 사이를 보이드 없이 제1 매립 절연막을 매립하는 단계;상기 제1 매립 절연막 상에 비트라인 스택 패턴들을 형성하는 단계;상기 비트 라인 스택 패턴들의 양측벽에 비트라인 스페이서를 형성하는 단계;상기 비트 라인 스페이서 및 비트 라인 스택 패턴들 상에 원자층 증착법에 의하여 실리콘 산화막 및 실리콘 질화막의 다중막으로 형성된 제2 버블방지막을 형성하는 단계; 및상기 제2 버블방지막 상의 비트 라인 스택 패턴 사이를 보이드 없이 제2 매립 절연막으로 매립하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제17항에 있어서, 상기 라이너막과, 상기 게이트 스페이서 및 비트 라인 스페이서는 각각 원자층 증착법에 의하여 실리콘 질화막 및 실리콘 산화막의 다중막 또는 원자층 증착법에 의하여 실리콘 산화막과 실리콘 질화막의 다중막으로 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제18항에 있어서, 상기 라이너막, 게이트 스페이서, 제1 버블 방지막, 비트라인 스페이서 또는 제2 버블 방지막은 각각 진공 브레이크 없이 형성하는 것을 특징으로 하는 반도체 소자의 제조방법.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100390830B1 (ko) * | 2000-12-22 | 2003-07-10 | 주식회사 하이닉스반도체 | 원자층 박막 증착장치 및 방법 |
KR100459724B1 (ko) * | 2002-09-11 | 2004-12-03 | 삼성전자주식회사 | 저온 원자층증착에 의한 질화막을 식각저지층으로이용하는 반도체 소자 및 그 제조방법 |
US8227357B2 (en) | 2009-03-24 | 2012-07-24 | Samsung Electronics Co., Ltd. | Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6693051B2 (en) * | 2001-02-01 | 2004-02-17 | Lucent Technologies Inc. | Silicon oxide based gate dielectric layer |
US6596643B2 (en) * | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
US6551893B1 (en) * | 2001-11-27 | 2003-04-22 | Micron Technology, Inc. | Atomic layer deposition of capacitor dielectric |
US7081271B2 (en) * | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6833161B2 (en) * | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US7151048B1 (en) | 2002-03-14 | 2006-12-19 | Cypress Semiconductor Corporation | Poly/silicide stack and method of forming the same |
US6825134B2 (en) * | 2002-03-26 | 2004-11-30 | Applied Materials, Inc. | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow |
US7439191B2 (en) * | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
US6720027B2 (en) * | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US20030235961A1 (en) * | 2002-04-17 | 2003-12-25 | Applied Materials, Inc. | Cyclical sequential deposition of multicomponent films |
KR100468729B1 (ko) * | 2002-04-25 | 2005-01-29 | 삼성전자주식회사 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
US20030215570A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
US7041335B2 (en) * | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US6858547B2 (en) * | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US20030232501A1 (en) * | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
KR100505668B1 (ko) * | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
WO2004009861A2 (en) * | 2002-07-19 | 2004-01-29 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US6916374B2 (en) * | 2002-10-08 | 2005-07-12 | Micron Technology, Inc. | Atomic layer deposition methods and atomic layer deposition tools |
US6905737B2 (en) * | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US7540920B2 (en) | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US7189652B1 (en) * | 2002-12-06 | 2007-03-13 | Cypress Semiconductor Corporation | Selective oxidation of gate stack |
US7092287B2 (en) * | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
US7084076B2 (en) * | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US7371637B2 (en) * | 2003-09-26 | 2008-05-13 | Cypress Semiconductor Corporation | Oxide-nitride stack gate dielectric |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US20060062917A1 (en) * | 2004-05-21 | 2006-03-23 | Shankar Muthukrishnan | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060019032A1 (en) * | 2004-07-23 | 2006-01-26 | Yaxin Wang | Low thermal budget silicon nitride formation for advance transistor fabrication |
US7253084B2 (en) * | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
US7966969B2 (en) * | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
KR100609047B1 (ko) * | 2004-10-30 | 2006-08-09 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7682940B2 (en) * | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
US7629267B2 (en) * | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
KR100648859B1 (ko) * | 2005-06-07 | 2006-11-24 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
JP4492963B2 (ja) * | 2005-06-14 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 薄膜の成膜方法、気相成長装置、プログラム |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) * | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
KR100732759B1 (ko) * | 2005-06-22 | 2007-06-27 | 주식회사 하이닉스반도체 | 반도체 소자의 비트라인 및 그 형성 방법 |
US20070054048A1 (en) * | 2005-09-07 | 2007-03-08 | Suvi Haukka | Extended deposition range by hot spots |
US7718518B2 (en) * | 2005-12-16 | 2010-05-18 | Asm International N.V. | Low temperature doped silicon layer formation |
US7964514B2 (en) * | 2006-03-02 | 2011-06-21 | Applied Materials, Inc. | Multiple nitrogen plasma treatments for thin SiON dielectrics |
US20070238301A1 (en) * | 2006-03-28 | 2007-10-11 | Cabral Stephen H | Batch processing system and method for performing chemical oxide removal |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US7501355B2 (en) | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
DE112007001813T5 (de) * | 2006-07-31 | 2009-07-09 | Applied Materials, Inc., Santa Clara | Verfahren zum Steuern der Morphologie während der Bildung einer epitaktischen Schicht |
CN101496153A (zh) * | 2006-07-31 | 2009-07-29 | 应用材料股份有限公司 | 形成含碳外延硅层的方法 |
US7692222B2 (en) | 2006-11-07 | 2010-04-06 | Raytheon Company | Atomic layer deposition in the formation of gate structures for III-V semiconductor |
US7629256B2 (en) * | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
KR100877107B1 (ko) * | 2007-06-28 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 층간절연막 형성방법 |
ITPD20070272A1 (it) * | 2007-08-03 | 2009-02-04 | Nuova Ompi Srl | Procedimento per la produzione di contenitori in vetro e prodotto ottenuto |
US7851307B2 (en) | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
CN101621007A (zh) * | 2008-07-03 | 2010-01-06 | 中芯国际集成电路制造(上海)有限公司 | Sanos存储单元结构 |
US8012876B2 (en) * | 2008-12-02 | 2011-09-06 | Asm International N.V. | Delivery of vapor precursor from solid source |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
JP2013077805A (ja) * | 2011-09-16 | 2013-04-25 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9425078B2 (en) * | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
KR102199851B1 (ko) | 2014-10-21 | 2021-01-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
KR102344996B1 (ko) * | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
US11355616B2 (en) * | 2019-10-31 | 2022-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air spacers around contact plugs and method forming same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6482615A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Manufacture of semiconductor element |
JPH05160152A (ja) * | 1991-12-05 | 1993-06-25 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
US6118167A (en) * | 1997-11-13 | 2000-09-12 | National Semiconductor Corporation | Polysilicon coated nitride-lined shallow trench |
KR100280106B1 (ko) * | 1998-04-16 | 2001-03-02 | 윤종용 | 트렌치 격리 형성 방법 |
US5981350A (en) * | 1998-05-29 | 1999-11-09 | Micron Technology, Inc. | Method for forming high capacitance memory cells |
US6025627A (en) * | 1998-05-29 | 2000-02-15 | Micron Technology, Inc. | Alternate method and structure for improved floating gate tunneling devices |
KR100322531B1 (ko) * | 1999-01-11 | 2002-03-18 | 윤종용 | 파임방지막을 이용하는 반도체소자의 트랜치 소자분리방법 및이를 이용한 반도체소자 |
TW444395B (en) * | 1999-07-27 | 2001-07-01 | Taiwan Semiconductor Mfg | Processing method to planarize the crown capacitor device |
KR100322890B1 (ko) * | 1999-12-30 | 2002-02-08 | 박종섭 | 반도체장치의 절연막 형성방법 |
KR20010058498A (ko) * | 1999-12-30 | 2001-07-06 | 박종섭 | 반도체 소자의 트렌치형 소자분리막 형성방법 |
US6391803B1 (en) * | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US6734082B2 (en) * | 2002-08-06 | 2004-05-11 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a shallow trench isolation structure featuring a group of insulator liner layers located on the surfaces of a shallow trench shape |
-
2000
- 2000-10-19 KR KR10-2000-0061548A patent/KR100378186B1/ko active IP Right Grant
-
2001
- 2001-07-12 US US09/902,607 patent/US6833310B2/en not_active Expired - Lifetime
-
2004
- 2004-11-18 US US10/990,429 patent/US7544607B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100390830B1 (ko) * | 2000-12-22 | 2003-07-10 | 주식회사 하이닉스반도체 | 원자층 박막 증착장치 및 방법 |
KR100459724B1 (ko) * | 2002-09-11 | 2004-12-03 | 삼성전자주식회사 | 저온 원자층증착에 의한 질화막을 식각저지층으로이용하는 반도체 소자 및 그 제조방법 |
US6858533B2 (en) | 2002-09-11 | 2005-02-22 | Samsung Electronics Co., Ltd. | Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same |
US8227357B2 (en) | 2009-03-24 | 2012-07-24 | Samsung Electronics Co., Ltd. | Methods of fabricating silicon oxide layers using inorganic silicon precursors and methods of fabricating semiconductor devices including the same |
Also Published As
Publication number | Publication date |
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US7544607B2 (en) | 2009-06-09 |
US20020047151A1 (en) | 2002-04-25 |
US20050087828A1 (en) | 2005-04-28 |
KR100378186B1 (ko) | 2003-03-29 |
US6833310B2 (en) | 2004-12-21 |
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