CN100489147C - 用于对高温超导体材料真空蒸发的装置和方法 - Google Patents
用于对高温超导体材料真空蒸发的装置和方法 Download PDFInfo
- Publication number
- CN100489147C CN100489147C CNB2003801028517A CN200380102851A CN100489147C CN 100489147 C CN100489147 C CN 100489147C CN B2003801028517 A CNB2003801028517 A CN B2003801028517A CN 200380102851 A CN200380102851 A CN 200380102851A CN 100489147 C CN100489147 C CN 100489147C
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- Prior art keywords
- temperature superconductor
- described device
- evaporation
- evaporating area
- superconductor material
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- Expired - Lifetime
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02024901A EP1422313A1 (de) | 2002-11-05 | 2002-11-05 | Vorrichtung und Verfahren zum Aufdampfen eines Beschichtungsmaterials im Vakuum mit kontinuierlicher Materialnachführung |
| EP02024901.7 | 2002-11-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1711368A CN1711368A (zh) | 2005-12-21 |
| CN100489147C true CN100489147C (zh) | 2009-05-20 |
Family
ID=32187159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003801028517A Expired - Lifetime CN100489147C (zh) | 2002-11-05 | 2003-10-15 | 用于对高温超导体材料真空蒸发的装置和方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7727335B2 (de) |
| EP (2) | EP1422313A1 (de) |
| JP (1) | JP4519653B2 (de) |
| KR (1) | KR100996338B1 (de) |
| CN (1) | CN100489147C (de) |
| AT (1) | ATE321898T1 (de) |
| AU (1) | AU2003298085A1 (de) |
| DE (1) | DE50302842D1 (de) |
| WO (1) | WO2004041985A2 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4589698B2 (ja) * | 2004-11-10 | 2010-12-01 | 新日本製鐵株式会社 | 超電導バルク体 |
| US7398605B2 (en) | 2005-02-04 | 2008-07-15 | Eastman Kodak Company | Method of feeding particulate material to a heated vaporization surface |
| KR100984148B1 (ko) * | 2007-12-21 | 2010-09-28 | 삼성전기주식회사 | 소스량 제어가 가능한 진공증착장치 |
| FR2938554B1 (fr) * | 2008-11-19 | 2011-05-06 | Areva Nc | Procede de revetement d'un element de creuset metallique par un melange de verre et de ceramique |
| CN101845617A (zh) * | 2010-06-07 | 2010-09-29 | 崔铮 | 直线型金属镀膜蒸发源的连续输送镀膜料装置 |
| DE102010038656A1 (de) | 2010-07-29 | 2012-02-02 | THEVA DüNNSCHICHTTECHNIK GMBH | Hochtemperatur-Supraleiter-Bandleiter mit hoher kritischer Stromtragfähigkeit |
| CN105586570A (zh) * | 2014-11-17 | 2016-05-18 | 上海和辉光电有限公司 | 辐射源蒸发系统及蒸镀控制方法 |
| CN104611672A (zh) * | 2014-11-28 | 2015-05-13 | 中国电子科技集团公司第四十八研究所 | 一种聚焦电子束蒸发源及蒸发镀膜装置 |
| DE102015117182A1 (de) * | 2015-10-08 | 2017-04-13 | Von Ardenne Gmbh | Verfahren und Vorrichtung zum Verdampfen von Material |
| DE102016121256B4 (de) | 2016-11-07 | 2020-11-26 | Carl Zeiss Vision International Gmbh | Vakuumverdampfungseinrichtung, Tiegelabdeckung mit Nachfülleinrichtung und Vakuumbeschichtungsverfahren |
| DE102017103746A1 (de) * | 2017-02-23 | 2018-08-23 | VON ARDENNE Asset GmbH & Co. KG | Elektronenstrahlverdampfer, Beschichtungsvorrichtung und Beschichtungsverfahren |
| CN109182758B (zh) * | 2018-10-22 | 2023-06-02 | 天齐锂业（江苏）有限公司 | 一种低品位锂源制备超薄金属锂带的方法及系统 |
| CN111663105A (zh) * | 2020-05-26 | 2020-09-15 | 南方科技大学 | 超高真空电子束蒸发器、电子束镀膜装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251201C (zh) * | 2002-05-31 | 2006-04-12 | Tdk株式会社 | 光学头装置和采用此光学头装置的光学再现设备 |
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| US4381894A (en) * | 1980-11-06 | 1983-05-03 | Inficon Leybold-Heraeus, Inc. | Deposition monitor and control system |
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| JP2711253B2 (ja) | 1987-03-18 | 1998-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 超伝導膜及びその形成方法 |
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| US5945163A (en) * | 1998-02-19 | 1999-08-31 | First Solar, Llc | Apparatus and method for depositing a material on a substrate |
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2002
- 2002-11-05 EP EP02024901A patent/EP1422313A1/de not_active Withdrawn
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2003
- 2003-10-15 AU AU2003298085A patent/AU2003298085A1/en not_active Abandoned
- 2003-10-15 JP JP2004548746A patent/JP4519653B2/ja not_active Expired - Lifetime
- 2003-10-15 WO PCT/EP2003/011428 patent/WO2004041985A2/de active IP Right Grant
- 2003-10-15 CN CNB2003801028517A patent/CN100489147C/zh not_active Expired - Lifetime
- 2003-10-15 KR KR1020057007873A patent/KR100996338B1/ko active IP Right Grant
- 2003-10-15 AT AT03795784T patent/ATE321898T1/de not_active IP Right Cessation
- 2003-10-15 US US10/533,776 patent/US7727335B2/en active Active
- 2003-10-15 DE DE50302842T patent/DE50302842D1/de not_active Expired - Lifetime
- 2003-10-15 EP EP03795784A patent/EP1558782B1/de not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251201C (zh) * | 2002-05-31 | 2006-04-12 | Tdk株式会社 | 光学头装置和采用此光学头装置的光学再现设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4519653B2 (ja) | 2010-08-04 |
| WO2004041985A2 (de) | 2004-05-21 |
| EP1558782A2 (de) | 2005-08-03 |
| KR20050084652A (ko) | 2005-08-26 |
| DE50302842D1 (de) | 2006-05-18 |
| WO2004041985B1 (de) | 2004-08-26 |
| WO2004041985A3 (de) | 2004-06-17 |
| AU2003298085A8 (en) | 2004-06-07 |
| CN1711368A (zh) | 2005-12-21 |
| EP1422313A1 (de) | 2004-05-26 |
| US7727335B2 (en) | 2010-06-01 |
| AU2003298085A1 (en) | 2004-06-07 |
| KR100996338B1 (ko) | 2010-11-23 |
| US20060051495A1 (en) | 2006-03-09 |
| JP2006504869A (ja) | 2006-02-09 |
| EP1558782B1 (de) | 2006-03-29 |
| ATE321898T1 (de) | 2006-04-15 |
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