CN100487863C - 转移晶片的方法 - Google Patents
转移晶片的方法 Download PDFInfo
- Publication number
- CN100487863C CN100487863C CNB2005800251935A CN200580025193A CN100487863C CN 100487863 C CN100487863 C CN 100487863C CN B2005800251935 A CNB2005800251935 A CN B2005800251935A CN 200580025193 A CN200580025193 A CN 200580025193A CN 100487863 C CN100487863 C CN 100487863C
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- CN
- China
- Prior art keywords
- chip
- layer
- thin layer
- tack coat
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
Abstract
Description
Claims (34)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0451085 | 2004-06-02 | ||
FR0451085A FR2871291B1 (fr) | 2004-06-02 | 2004-06-02 | Procede de transfert de plaques |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1989594A CN1989594A (zh) | 2007-06-27 |
CN100487863C true CN100487863C (zh) | 2009-05-13 |
Family
ID=34946054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800251935A Active CN100487863C (zh) | 2004-06-02 | 2005-06-02 | 转移晶片的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7807482B2 (zh) |
EP (1) | EP1759411B1 (zh) |
JP (1) | JP5095394B2 (zh) |
KR (1) | KR101148050B1 (zh) |
CN (1) | CN100487863C (zh) |
FR (1) | FR2871291B1 (zh) |
IL (1) | IL179641A0 (zh) |
WO (1) | WO2005124826A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2871291B1 (fr) * | 2004-06-02 | 2006-12-08 | Tracit Technologies | Procede de transfert de plaques |
FR2880189B1 (fr) * | 2004-12-24 | 2007-03-30 | Tracit Technologies Sa | Procede de report d'un circuit sur un plan de masse |
KR100785009B1 (ko) * | 2006-03-06 | 2007-12-11 | 삼성전자주식회사 | 수직 자기 헤드 및 그 제조 방법 |
FR2926671B1 (fr) * | 2008-01-17 | 2010-04-02 | Soitec Silicon On Insulator | Procede de traitement de defauts lors de collage de plaques |
FR2926748B1 (fr) * | 2008-01-25 | 2010-04-02 | Commissariat Energie Atomique | Objet muni d'un element graphique reporte sur un support et procede de realisation d'un tel objet. |
FR2962598B1 (fr) | 2010-07-06 | 2012-08-17 | Commissariat Energie Atomique | Procede d'implantation d'un materiau piezoelectrique |
EP2685297B1 (en) | 2012-07-13 | 2017-12-06 | Huawei Technologies Co., Ltd. | A process for manufacturing a photonic circuit with active and passive structures |
WO2014020387A1 (en) | 2012-07-31 | 2014-02-06 | Soitec | Methods of forming semiconductor structures including mems devices and integrated circuits on opposing sides of substrates, and related structures and devices |
KR102327141B1 (ko) * | 2014-11-19 | 2021-11-16 | 삼성전자주식회사 | 프리패키지 및 이를 사용한 반도체 패키지의 제조 방법 |
DE102015118991A1 (de) * | 2015-11-05 | 2017-05-11 | Ev Group E. Thallner Gmbh | Verfahren zur Behandlung von Millimeter- und/oder Mikrometer- und/oder Nanometerstrukturen an einer Oberfläche eines Substrats |
US9806025B2 (en) | 2015-12-29 | 2017-10-31 | Globalfoundries Inc. | SOI wafers with buried dielectric layers to prevent Cu diffusion |
TWI756384B (zh) * | 2017-03-16 | 2022-03-01 | 美商康寧公司 | 用於大量轉移微型led的方法及製程 |
JP2019075569A (ja) * | 2018-12-12 | 2019-05-16 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 半導体素子を選択的にトランスファーする方法 |
CN110783254B (zh) * | 2019-11-08 | 2022-10-04 | 京东方科技集团股份有限公司 | 一种芯片转移方法及半导体器件 |
CN111474200B (zh) * | 2020-04-16 | 2023-09-26 | 宸鸿科技(厦门)有限公司 | 制备电子元件显微结构样品的方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5534328A (en) * | 1993-12-02 | 1996-07-09 | E. I. Du Pont De Nemours And Company | Integrated chemical processing apparatus and processes for the preparation thereof |
FR2715502B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Structure présentant des cavités et procédé de réalisation d'une telle structure. |
US5651900A (en) * | 1994-03-07 | 1997-07-29 | The Regents Of The University Of California | Microfabricated particle filter |
KR100380701B1 (ko) * | 1994-07-26 | 2003-07-22 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 표면장착용반도체장치제조방법및표면장착용반도체장치 |
EP0746875B1 (en) * | 1994-12-23 | 2002-03-06 | Koninklijke Philips Electronics N.V. | Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material glued on a support wafer |
JPH08334610A (ja) * | 1995-06-06 | 1996-12-17 | Furukawa Electric Co Ltd:The | 回折格子の製造方法 |
US5641416A (en) * | 1995-10-25 | 1997-06-24 | Micron Display Technology, Inc. | Method for particulate-free energy beam cutting of a wafer of die assemblies |
US5656552A (en) * | 1996-06-24 | 1997-08-12 | Hudak; John James | Method of making a thin conformal high-yielding multi-chip module |
US6027958A (en) * | 1996-07-11 | 2000-02-22 | Kopin Corporation | Transferred flexible integrated circuit |
JPH10223495A (ja) * | 1997-02-04 | 1998-08-21 | Nippon Telegr & Teleph Corp <Ntt> | 柔軟な構造を有する半導体装置とその製造方法 |
US6013534A (en) * | 1997-07-25 | 2000-01-11 | The United States Of America As Represented By The National Security Agency | Method of thinning integrated circuits received in die form |
JP2000349285A (ja) * | 1999-06-04 | 2000-12-15 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
US6211733B1 (en) | 1999-10-22 | 2001-04-03 | Powerwave Technologies, Inc. | Predistortion compensation for a power amplifier |
JP3455762B2 (ja) * | 1999-11-11 | 2003-10-14 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
US6214733B1 (en) * | 1999-11-17 | 2001-04-10 | Elo Technologies, Inc. | Process for lift off and handling of thin film materials |
JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
JP2002050749A (ja) * | 2000-07-31 | 2002-02-15 | Canon Inc | 複合部材の分離方法及び装置 |
JP2002057128A (ja) * | 2000-08-15 | 2002-02-22 | Fujitsu Quantum Devices Ltd | 半導体装置及びその製造方法 |
US20020115263A1 (en) * | 2001-02-16 | 2002-08-22 | Worth Thomas Michael | Method and related apparatus of processing a substrate |
FR2823012B1 (fr) * | 2001-04-03 | 2004-05-21 | Commissariat Energie Atomique | Procede de transfert selectif d'au moins un element d'un support initial sur un support final |
FR2823596B1 (fr) * | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
FR2823599B1 (fr) * | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
GB0110088D0 (en) * | 2001-04-25 | 2001-06-20 | Filtronic Compound Semiconduct | Semiconductor wafer handling method |
FR2828579B1 (fr) * | 2001-08-13 | 2004-01-30 | St Microelectronics Sa | Procede de manipulation d'une plaquette de silicium mince |
US20030064579A1 (en) * | 2001-09-27 | 2003-04-03 | Masafumi Miyakawa | Surface protecting adhesive film for semiconductor wafer and protecting method for semiconductor wafer using said adhesive film |
FR2860842B1 (fr) * | 2003-10-14 | 2007-11-02 | Tracit Technologies | Procede de preparation et d'assemblage de substrats |
FR2871291B1 (fr) * | 2004-06-02 | 2006-12-08 | Tracit Technologies | Procede de transfert de plaques |
FR2880189B1 (fr) * | 2004-12-24 | 2007-03-30 | Tracit Technologies Sa | Procede de report d'un circuit sur un plan de masse |
-
2004
- 2004-06-02 FR FR0451085A patent/FR2871291B1/fr active Active
-
2005
- 2005-06-02 CN CNB2005800251935A patent/CN100487863C/zh active Active
- 2005-06-02 WO PCT/FR2005/050411 patent/WO2005124826A1/fr active Application Filing
- 2005-06-02 KR KR1020067027678A patent/KR101148050B1/ko active IP Right Grant
- 2005-06-02 EP EP05776391A patent/EP1759411B1/fr active Active
- 2005-06-02 US US11/628,615 patent/US7807482B2/en active Active
- 2005-06-02 JP JP2007514059A patent/JP5095394B2/ja active Active
-
2006
- 2006-11-27 IL IL179641A patent/IL179641A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20080254596A1 (en) | 2008-10-16 |
US7807482B2 (en) | 2010-10-05 |
EP1759411A1 (fr) | 2007-03-07 |
WO2005124826A1 (fr) | 2005-12-29 |
JP5095394B2 (ja) | 2012-12-12 |
JP2008502129A (ja) | 2008-01-24 |
CN1989594A (zh) | 2007-06-27 |
EP1759411B1 (fr) | 2012-05-30 |
FR2871291B1 (fr) | 2006-12-08 |
IL179641A0 (en) | 2008-04-13 |
KR20070034535A (ko) | 2007-03-28 |
FR2871291A1 (fr) | 2005-12-09 |
KR101148050B1 (ko) | 2012-05-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: S.O.I. TEKER ISOLATOR SILICON TECHNOLOGY Free format text: FORMER OWNER: TRACIT TECHNOLOGIES Effective date: 20100728 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: MOIRANS, FRANCE TO: BONIEN, FRANCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100728 Address after: French Buryn Patentee after: S.O.I. Teker Isolator Silicon Technology Address before: French moirans Patentee before: Tracit Technologies |